• Korean journal of communication and information
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• v.34
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• pp.34-62
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• 2006

The World Summit on the Information Society (WSIS) was held in two phases. The first phase took place in Geneva, December 2003, and the second phase took place in Tunis, November 2005. The objective of the WSIS was to establish the foundations for an Information Society for all, reflecting all the different interests at stake. In relation to, this article explore the vision and paradigm of WSIS. For this, this article review the historical context of International information order and International agreements, and examine the issues of WSIS. As a result, I recognize, It is valuable that the process of WSIS for Global governance was held among governments and other stakeholders, i.e. the private sector, civil society and international organization. In addition, developing countries's voice are deeply reflected on the WSIS. It is noticeable that ITU played key role as coordinator. However, we are anxious that WSIS's vision for Information society have a bias toward Technology determinism. Eventually, this article argue that WSIS discourse is the lack of any serious and critical structural analysis of the politico-economic context.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.5-6
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• 2006

• Journal of Institute of Control, Robotics and Systems
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• v.17 no.3
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• pp.248-253
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• 2011

This paper proposes the robust matching algorithm for optical images obtained by WSI(White-light Scanning Interferometer) machine. The matching algorithms are divided by two part according to the matching points: algorithm whether the matching points between two images exist or not. Also, after matching the images, we propose the algorithm to smooth the matched image. Finally, we show the effectiveness and feasibility of the proposed method through some experiments.

• Journal of Biosystems Engineering
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• v.30 no.1 s.108
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• pp.8-16
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• 2005

The extrusion-cooking condition on Cordyceps pruinosa was designed using twin-screw extruder. Response surface methodology (RSM) was used to investigate extrusion-cooking using a central composition design with varying die temperature $(114-146^{\circ}C)$, feed moisture $(22-38\%)$, feed rate (4-14 ka/h) and screw speed (120-280 rpm). System parameters (die pressure and specific mechanical energy (SME)) and extrudate parameters (density and water solubility index (WSI)) were statically analyzed using RSH. Die pressure was significantly affected by temperature, moisture contents and feed rate. SM was affected by screw speed and feed rate. When die temperature is $130^{\circ}C$ and moisture content $25\%$, the optimum pressure is shown. SME is about 20 Wh/kg, when feed rate is $10\~12kg/min$ and screw speed $200\~250rpm$. WSI was affected by temperature and moisture contents. Density was not affected by any factor. WSI increases by $7\%$ from about $23\%$ to about $30\%$, as temperature is raised from $120^{\circ}C\;to\;140^{\circ}C$. The WSI of Cordyceps pruinosa pulverized after extruding (PE) is about $26.97\%$ higher than that of raw material and $10\%$ higher than that of pulverized after drying (PD). The content of unsaturated fatty acid were not significantly different in PD and PE. Anti-oxidative activity of PE was 1.67-2.2 times higher than that of PD in Cordyceps pruinosa using 1- dipheny1-2-picrylhydrazyl method (DPPH).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.193-193
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• 2010

서로 다른 유전 물질을 이용하여 다층구조의 터널장벽을 이용하여 비휘발성 메모리 소자의 동작 특성 및 전하보존 특성을 향상시킬 수 있음이 보고되었다.[1-3] 본 연구에서는 $SiO_2/Si_3N_4/SiO_2$구조의 다층 구조의 터널 장벽을 이용하여 $WSi_2$ 나노 입자 비휘발성 메모리 소자를 제작하였다. P-형 Si 기판에 100 nm 두께의 Poly-Si 박막을 증착시켜 소스, 드레인 및 게이트 영역을 포토 리소그래피를 이용하여 형성하였다. $SiO_2/Si_3N_4/SiO_2$(ONO) 터널장벽은 CVD (chemical vapor deposition) 장치로 각각 2 nm, 2 nm 와 3 nm 두께로 형성하였으며, 그 위에 $WSi_2$ 박막을 3~4 nm 마그내트론 스퍼터링 방법으로 증착하였다. ONO 터널 장벽구조 위에 $WSi_2$나노입자를 형성시키기 위해, $N_2$분위기에서 급속열처리 방법을 이용하여 $900^{\circ}C$에서 1분간 열처리를 하였다. 마지막으로 20 nm 두께의 컨트롤 절연막을 초고진공 스퍼터를 이용하여 증착하고, Al 박막을 200 nm 두께로 증착하였다. 여기서. 제작된 메모리 소자의 게이트 길이와 선폭은 모두 $10\;{\mu}m$ 이다. 비휘발성 메모리 소자의 전기적 특성은 HP 4156A 반도체 파라미터 장비, Agilent 81104 A 80MHz 펄스/패턴 발생기를 이용하였다. 또한 전하 저장 터널링 메커니즘과, 전하누설의 원인을 분석하고 소자의 열적 안정성을 확인하기 위하여 $25^{\circ}C$ 에서 $125^{\circ}C$ 로 온도를 변화시켜 외부로 방출되는 전하의 활성화 에너지를 확인하여 누설근원을 확인하였다.

• Journal of the Korean Chemical Society
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• v.38 no.7
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• pp.473-479
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• 1994

Tungsten thin film was deposited on p-(100) silicon substrate by using the LPCVD(low pressure chemical vapor deposition) technique. $WF_6$ was used as a source gas for tungsten and $SiH_4$ was used as a reducing gas for $WF_6$. Tungsten thin film was deposited by either SiH4 or Si substrate reduction of $WF_6$ under cold-wall condition and it was deposited by $SiH_4$ reduction of $WF_6$ under hot-wall condition. The crystal structure of deposited thin film under both conditions were identified to be bcc (body centered cubic). The physical and electrical properties of deposited thin films were investigated. The deposited film under hot-wall condition changed to $WSi_2$ film by the annealing under $800^{\circ}C.$ From the experimental results and theoretical considerations, the change of the crystal structure of the thin film by annealing was discussed. $WSi_2$ thin film, which was known to have good compatibility with Si substrate, could be produced under hot-wall condition although the film properties were superior under cold-wall condition.

• Applied Microscopy
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• v.51
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• pp.4.1-4.12
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• 2021

Fluorescence in situ hybridization (FISH) is a technique to visualize specific DNA/RNA sequences within the cell nuclei and provide the presence, location and structural integrity of genes on chromosomes. A confocal Whole Slide Imaging (WSI) scanner technology has superior depth resolution compared to wide-field fluorescence imaging. Confocal WSI has the ability to perform serial optical sections with specimen imaging, which is critical for 3D tissue reconstruction for volumetric spatial analysis. The standard clinical manual scoring for FISH is labor-intensive, time-consuming and subjective. Application of multi-gene FISH analysis alongside 3D imaging, significantly increase the level of complexity required for an accurate 3D analysis. Therefore, the purpose of this study is to establish automated 3D FISH scoring for z-stack images from confocal WSI scanner. The algorithm and the application we developed, SHIMARIS PAFQ, successfully employs 3D calculations for clear individual cell nuclei segmentation, gene signals detection and distribution of break-apart probes signal patterns, including standard break-apart, and variant patterns due to truncation, and deletion, etc. The analysis was accurate and precise when compared with ground truth clinical manual counting and scoring reported in ten lymphoma and solid tumors cases. The algorithm and the application we developed, SHIMARIS PAFQ, is objective and more efficient than the conventional procedure. It enables the automated counting of more nuclei, precisely detecting additional abnormal signal variations in nuclei patterns and analyzes gigabyte multi-layer stacking imaging data of tissue samples from patients. Currently, we are developing a deep learning algorithm for automated tumor area detection to be integrated with SHIMARIS PAFQ.

• Korean Journal of Food Science and Technology
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• v.31 no.2
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• pp.564-567
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• 1999

Gelatinization characteristics of pigmented rice varieties were determined in terms of amylose contents, amylograph, gel consistency, water absorption index (WAI) and water soluble index (WSI). Amylose contents of black and red rice were lower than those of brown rice, especially Sanghaehyanghyulla exhibited the lowest amylose contents among the pigmented rice varieties tested. There was no significant difference in WAI among the pigmented rice varieties, but WSI was lower in red rice than the others. Peak viscosity of black rice measured in a Brabender amylograph was lower than those of red and brown rice.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.200-207
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• 2020

MoSi₂, (Mo_1/2W_1/2)Si₂, and WSi₂ powders were synthesized by self-propagating high-temperature synthesis (SHS) method. The synthesized powders were heat-treated at 500, 1,000, 1,200, 1,300, 1,400, 1,500 and 1,600℃ in ambient atmosphere. Oxidation of Mo-W silicide powder was found at low temperature of 500℃. XRD structure analysis and DTA/TG data showed that MoO₃ was formed with 500℃ heat treatment for 1 hour, and that it was α-cristobalite phase that was formed with 1200℃ heat treatment, not α-quartz phase which is commonly found and stable at room temperature. Existence of W accelerated decomposition at both low and high temperature. Fully sintered MoSi₂ and (Mo_1/2W_1/2)Si₂ specimen did not show decomposition or weight loss by oxidation, with 1 hour heat treatment at either low or high temperature. Notably, it was difficult to sinter WSi₂ because of oxidation reaction at low temperature.