• Title/Summary/Keyword: WO$_3$ sensor

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Gas Sensing Characteristics of WO3:In2O3 Prepared by Ball-mill Time (볼밀시간에 의한 WO3:In2O3 가스센서의 감응특성)

  • Shin, Deuck-Jin;Yu, Yun-Sik;Park, Sung-Hyun;Yu, Il
    • Korean Journal of Materials Research
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    • v.21 no.6
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    • pp.299-302
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    • 2011
  • [ $WO_3$ ]powders were ball-milled with an alumina ball for 0-72 hours. $In_2O_3$ doped $WO_3$ was prepared by soaking ball-milled $WO_3$ in an $InCl_3$ solution. The mixed powder was annealed at $700^{\circ}C$ for 30 min in an air atmosphere. A paste for screen-printing the thick film was prepared by mixing the $WO_3$:In2O3 powders with ${\alpha}$-terpinol and glycerol. $In_2O_3$ doped $WO_3$ thick films were fabricated into a gas sensor by a screen-printing method on alumina substrates. The structural properties of the $WO_3$:$InO_3$ thick films were a monoclinic phase with a (002) dominant orientation. The particle size of the $WO_3$:$InO_3$ decreased with the ball-milling time. The sensing characteristics of the $In_2O_3$ doped $WO_3$ were investigated by measuring the electrical resistance of each sensor in the test-box. The highest sensitivity to 5 ppm $CH_4$ gas and 5 ppm $CH_3CH_2CH_3$ gas was observed in the ball-milled $WO_3$:$InO_3$ gas sensors at 48 hours. The response time of $WO_3$:$In_2O_3$ gas sensors was 7 seconds and recovery time was 9 seconds for the methane gas.

Improvement of Long-term Stability in $SnO_2$ Based Gas Sensor for Monitoring Offensive Odor

  • Park, Jong-Hun;Kim, Kwang-Ho
    • The Korean Journal of Ceramics
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    • v.6 no.3
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    • pp.304-308
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    • 2000
  • WO$_3$/SnO$_2$ceramics has been suggested as an effective sensing material for monitoring offensive odor or pollutant gases. This work was focussed on improving long-term stability, which has been a principal problem generally taking place in SnO$_2$semiconductor gas sensor. Miniaturized thick film gas sensors were fabricated by screen printing technique. Two types of sensor materials, W doped SnO$_2$and WO$_3$mixed SnO$_2$, were comparatively investigated on those long-term stability and sensitivites to several gases. Small amount of W doping(0.1 mol%) into SnO$_2$largely improved the long-term stability. The W(0.1 mol%) doped SnO$_2$gas sensor had higher sensitivities to both acetone and alcohol compared with WO$_3$(5 wt%) mixed SnO$_2$gas sensor. On the contrary, WO$_3$(5 wt%) mixed SnO$_2$gas sensor showed more superior sensitivity to cigarette smoke due to larger W content.

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Highly Porous Tungsten Oxide Nanowires As Resistive Sensor for Reducing Gases

  • Nguyen, Minh Vuong;Hoang, Nhat Hieu;Jang, Dong-Mi;Jung, Hyuck;Kim, Do-Jin
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.16.1-16.1
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    • 2011
  • Gas sensor properties of $WO_3$ nanowire structures have been studied. The sensing layer was prepared by deposition of tungsten metal on porous single wall carbon nanotubes followed by thermal oxidation. The morphology and crystalline quality of $WO_3$ material was investigated by SEM, TEM, XRD and Raman analysis. A highly porous $WO_3$ nanowire structure with a mean diameter of 82 nm was obtained. Response to CO, $NH_3$ and $H_2$ gases diluted in air were investigated in the temperature range of $100{\sim}340^{\circ}C$ The sensor exhibited low response to CO gas and quite high response to $NH_3$ and $H_2$ gases. The highest sensitivity was observed at $250^{\circ}C$ for $NH_3$ and $300^{\circ}C$ for $H_2$. The effect of the diameters of $WO_3$ nanowires on the sensor performance was also studied. The $WO_3$ nanowires sensor with diameter of 40 nm showed quite high sensitivity, fast response and recovery times to $H_2$ diluted in dry air. The sensitivity as a function of detecting gas concentrations and gas sensing mechanism was discussed. The effect of dilution carrier gases, dry air and nitrogen, was examined.

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Characteristics of CuO doped WO3 Thick Film for Gas Sensors (CuO가 첨가된 WO3 후막 가스센서 특성 연구)

  • Yu, Il;Lee, Don-Kyu;Shin, Deuck-Jin;Yu, Yoon-Sik
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.9
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    • pp.1621-1625
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    • 2010
  • Recently, due to increase in the usage of toxic gas and inflammability gas, the ability to monitor and precisely measurement of these gases is crucial in preventing the occurrence of various accidents. CuO doped and undoped $WO_3$ thick films gas sensors were prepared using screen-printing method on alumina substrates. A structural properties of $WO_3$:CuO thick films had monoclinic phase and triclinic phase of $WO_3$ together. Sensitivity of $WO_3$:CuO sensor at 2000 ppm of $CO_2$ gas and 50 ppm of $H_2S$ gas was investigated. 4 wt% Cu doped $WO_3$ thick films had the highest sensitivity of $CO_2$ gas and $H_2S$ gas.

Characteristics of a Metal-loaded SnO2/WO3 Thick Film Gas Sensor for Detecting Acetaldehyde Gas

  • Jun, Jae-Mok;Park, Young-Ho;Lee, Chang-Seop
    • Bulletin of the Korean Chemical Society
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    • v.32 no.6
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    • pp.1865-1872
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    • 2011
  • This study investigates the sensitivity of a gas sensor to volatile organic compounds (VOCs) at various operating temperatures and catalysts. Nano-sized powdered $WO_3$ prepared by sol-gel and chemical precipitation methods was mixed with various metal oxides. Next, transition metals (Pt, Ru, Pd, and In) were doped on the surface of the mixture. Metal-$WO_3$ thick films were prepared using the screen-printing method. The physical and chemical properties of the films were studied by SEM/EDS, XRD, and BET techniques. The measured sensitivity to VOCs is defined as the ratio ($R_a/R_g$) of resistance ($R_{air}$) of $WO_3$ film in the air to resistance ($R_{gas}$) of $WO_3$ film in a VOCs test gas. The sensitivity and selectivity of the films were tested with various VOCs such as acetaldehyde, formaldehyde, methyl alcohol, and BTEX. The thick $WO_3$ film containing 1 wt % of Ru and 5 wt % of $SnO_2$ showed the best sensitivity and selectivity to acetaldehyde gas at an operating temperature of 300 $^{\circ}C$.

Vertically Aligned WO3-CuO Core-Shell Nanorod Arrays for Ultrasensitive NH3 Detection

  • Yan, Wenjun;Hu, Ming
    • Nano
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    • v.13 no.10
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    • pp.1850122.1-1850122.6
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    • 2018
  • Vertically aligned $WO_3$-CuO core-shell nanorod arrays for $NH_3$ sensing are prepared. The sensor is fabricated by preparing $WO_3$-CuO nanorod arrays directly on silicon wafer with interdigital Pt electrodes. The $WO_3$-CuO nanorod arrays are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The sensor based on the vertically aligned $WO_3$-CuO nanorod arrays exhibits ultrasensitive $NH_3$ detection, indicating p-type behavior. The optimum sensing temperature is found to be about $150^{\circ}C$. Both response and recovery time to $NH_3$ ranging from 50 ppm to 500 ppm are around 10-15 s. A possible $NH_3$ sensing mechanism of the vertically aligned hybrid nanorod arrays is proposed.

Fabrication of an Optical Hydrogen Sensor Based on 3C-SiC Photovoltaic Effect and Its Characteristics (3C-SiC 광기전 특성 기반 광학식 수소센서의 제작과 그 특성)

  • Kim, Kang-San;Chung, Gwiy-Sang
    • Journal of Sensor Science and Technology
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    • v.21 no.4
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    • pp.283-286
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    • 2012
  • This paper presents the optical hydrogen sensor based on transparent 3C-SiC membrane and photovoltaic effect. Gasochromic materials of Pd and Pd/$WO_3$ were deposited by sputter on 3C-SiC membrane for gas sensing area. Gasochromic materials change to transparency by exposure to hydrogen. The variations of light intensity by hydrogen generate the photovoltaic of P-N junction between N-type 3C-SiC and P-type Si. Single layer of Pd shows higher photovoltaic compared with Pd/$WO_3$. However, phase transition from ${\alpha}$ to ${\beta}$ is shown at 6 %. Pd/$WO_3$ structure show the more linear response to hydrogen range of 2 % ~10 %. Also, almost 2 times fast response and recovery characteristics are shown at Pd/$WO_3$. These fast performances are come from the fact that Pd promoted the chemical reaction between hydrogen and $WO_3$.

The Fabrication and $NO_X$-sensing characteristics of $WO_3$-based semiconductor gas sensor for detecting sub-ppm level of $NO_X$ (초미량의 이산화질소가스 감지를 위한 텅스텐산화물계 반도체 가스 센서의 제조 및 $NO_X$ 감응 특성)

  • 이대식;임준우
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.601-604
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    • 1998
  • NOX detecting gas sensors using TiO2 doped tungsten oxide semiconductor were prepared and their electrical and sensing characteristics have been investigated. In normal air condition, the sensors of WO3, TiO2 doped WO3 show grain boundary heights of 0.34 eV, 0.25 eV, respectively. The grain boundary barrier energy variation was increased by doping TiO2 into large variation of resistance to NOX gases. And doping the TiO2 4 wt.%, the particle size of WO3 polycrystal films showed higher sensitivity and better sorption characteristics to NOX gas than the pure WO3 films material in air at operating temperature of $350^{\circ}C.$ The TiO2 doped WO3 semiconductor gas sensor shows nano-sized particle size and good sensitivity to sub-ppm concentration of NOX.

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Characteristics of Semiconductor Thin Film $NO_x$ Sensor Fabricated by MOD Method (MOD법에 의해 제조된 $NO_x$ 가스용 반도체 박막센서의 특성)

  • 송수호;송민석;이재열
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.11
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    • pp.1001-1006
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    • 1998
  • $WO_3$ based semiconduction sensor have been reported to have excellent sension properties to $NO_x$ gases by many researchers. In this study appropriate $WO_3$ precursor have been chosen and thin film sensors were fabricated by metallo organic deposition process. Their sensing characteristics were investigated as a function of NO concentration, heat treatment, and measuring temperature. Tungsten dichloro triethoxide was found to be a good precursor for $WO_3$ thin film in this method. Samples heat treated at $600^{\circ}C$ showed sensitivity (S) 200 to 50 ppm NO gas when measuring temperature was $150^{\circ}C$.

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Characteristics of CuO doped WO3-SnO2 Thick Film Gas Sensors (CuO가 첨가된 WO3-SnO2 후막 가스센서 특성 연구)

  • Lee, Don-Kyu;Shin, Deuck-Jin;Yu, Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.12
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    • pp.956-960
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    • 2010
  • CuO doped $WO_3-SnO_2$ thick film gas sensors were fabricated by screen printing method on alumina substrates and heat-treated at $350^{\circ}C$ in air. The effects of mixing ratio of $WO_3$ with $SnO_2$ on the structural and morphological properties of $WO_3-SnO_2$ were investigated X-ray diffraction and Scanning Electron Microscope. The structural properties of the $WO_3-SnO_2$:CuO thick film by XRD showed that the monoclinic of $WO_3$ and the tetragonal of $SnO_2$ phase were mixed. Nano CuO was coated on the $WO_3-SnO_2$ surface and then the surface of $WO_3$ was coated with $SnO_2$ particles with $1\sim1.5{\mu}m$ in diameters, as confirmed form the SEM image. The sensitivity of the $WO_3-SnO_2$:CuO sensor to 2000 ppm $CO_2$ gas and 50 ppm $H_2S$ gas for the various ratio of $WO_3$ and $SnO_2$ was investigated. The 4 wt% CuO doped $WO_3-SnO_2$(75:25) tkick films showed the highest sensitivity to $CO_2$ gas and $H_2S$ gas.