• Analytical Science and Technology
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• v.15 no.1
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• pp.15-19
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• 2002

The pretreatment of tungsten added $BaTiO_x$ ceramics was performed to improve the recovery of Ba, Ti and W. $BaTiO_x$ ceramics were digested with HF : HCl ( 1 : 2 ) mixture in an acid digestion bomb at $220^{\circ}C$ for 3 hrs. The concentration of Ba, Ti and W were determined by ICP-AES. Recoveries of Ba, Ti and W were 99.6%, 99.8% and 99.2%, respectively. And their C.V. values were 1.02%, 0.73% and 1.79%. Using this method, the analytical results of Ba, Ti and W for a real sample were obainted to be 25.9% (w/w), 38.8% (w/w) and 3.31% (w/w), respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.117-125
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• 1996

The variation of the interfacial and the electrical properties of SiO$_{2}$TiW layers as a function of anneal temperature was extensively investigated. During the deposition of SiO$_{2}$ on TiW chemical bonds such as SiO$_{2}$, TiW, WO$_{3}$, WO$_{2}$ TiO$_{2}$ Ti$_{2}$O$_{5}$ has been created at the SiO$_{2}$/TiW interface. At the anneal temperature of 300$^{\circ}C$, WO$_{3}$ and TiO$_{2}$ bonds started to break due to the reduction phenomena of W and Ti and simultaneously the metallic W and Ti bonds started to create. Above 500$^{\circ}C$, a part of Si-O bonds was broken and consequently Ti/W silicide was formed. Form the current-voltage characteristics of Al/Sico$_{2}$(220$\AA$)/TiW antifuse structure, it was found that the breakdown voltage of antifuse device wzas decreased with increasing annealing temperature for SiO$_{2}$(220$\AA$)/TiW layer. When r, the insulating property of antifuse device of the deterioration of intermetallic SiO$_{2}$ film, caused by the influw of Ti and W.W.

• Korean Journal of Materials Research
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• v.2 no.2
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• pp.110-118
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• 1992

When CVD-W films deposited on the reactively sputter-deposited TiN(${\circled1}$), the $NH_3$-RTP (rapid themal processed) TiN(${\circled2}$), and the furnace-annealed TiN submitate (${\circled3}$) by $SiH_4$, reduction, deposition rate is in the order of ${\circled1}>{\circled2}>{\circled3}$ and incubation period of W nucleation is in the order of ${\circled1}{\leq}{\circled2}<{\circled3}$. The longest incubation period of nucleation and lowest deposition rate for the CVD-W on the annealed TiN is due to the incorporation of oxygen from the nitrogen ambient containing some oxygen as contaminant into the TiN film. The higher W deposition rate and the lower incubation period of W nucleation on the RTP-TiN substrate in comparison with those on the sputtered TiN substrate seem to be due to a negative effect of the high compressive stress of the RTP-TiN on the nucleation and growth of W. Also the thickness uniformity of the W film deposited on the TiN substrate by $SiH_4$ reduction turns out to be better than that by $H_2$ reduction.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.593-597
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• 1993

Adhesion of CVD W to the TiN glue layer in the blanket W process which is a promising candidate for filing contact holes in subhalfmicron ULSIs has been investigated. The adhesion was enhanced with increasing the W film thickness due to the decrease of the TiN film stress. The adhesion strength was increased by the sputter etching of the TiN surface prior to the W deposition owing to the removal of contaminants and the increase of the surface roughness. The adhesion of the W film to the TiN glue layer property was also improved by Ar ion implantation of the TiN surface owing to the activation of the TiN surface.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.189-193
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• 2001

We have characterized physical and electrical properties of W-TiN stacked gate electrode structure with TiN as a diffusion barrier of fluorine. As the $N_2/Ar$ gas ratio increased during sputter deposition, TiN thin films became N-rich, and the resistivity of the films increased. However, the resistivity of W-TiN stacked gate reduced as a result of the crystallization of tungsten with the increase of $N_2/Ar$ gas ratio. On the other hand, tungsten in W-TiN stacked gate structure have the (100)-oriented crystalline structure although TiN films were subjected to annealing at high temperature (600~$800^{\circ}C$). Leakage currents of W-TiN gate MOS capacitors were less than $10^{-7}\textrm{/Acm}^2$ and also were lowered by the order of 2 compared with those of pure W gate electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.28-30
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• 1992

Long incubation period of W nucleation on the TiN glue layer is a serious problem in blanket W process. In this study we investigated the dependence of W nucleation and growth rate on the preparation method of the TiN film, deposition temperature, chemistry, $SiH_4/WF_6$ ratio and sputter etching, ion implantation, and $SiH_4$ flushing pre-treatments. Incubation periods of W nucleation and deposition rates of W growth on three different TiNs are in the order of TiN>RTP-TiN> annealed TiN and TiN${\leq}$RTP-TiN${\leq}$ annealed TiN, respectively. $\beta$-W is not found on TiN substrate even for high $SiH_4/WF_6$ ratio. Sputter etching pre-treatment increases incubation period of W nucleation, while it decreases deposition rate. $SiH_4$ flushing pre-treatment decreases incubation period, but it slightly decreases deposition rate.

• Polymer(Korea)
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• v.38 no.1
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• pp.103-107
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• 2014

Poly(acrylonitrile-butadiene-styrene) (ABS) composite sheets containing titanium dioxide ($TiO_2$), barium sulfate ($BaSO_4$), calcium carbonate ($CaCO_3$) were prepared by using a co-rotating twin screw extruder, and the reflectance and flexural modulus of the composite sheets were measured. The fillers were well dispersed in ABS matrix. The reflectance of composite sheet was increased with increasing $TiO_2$ and $BaSO_4$ content. Sheet having $TiO_2$ 20 wt% composition, with 5~20 wt% $BaSO_4$ resulted in more than 95% of reflectance. The flexural modulus of composite sheet was increased from 1864 MPa for $ABS/TiO_2/BaSO_4$ 85/10/5 (w/w/w) to 3134 MPa for $ABS/TiO_2/BaSO_4$ 55/20/25 (w/w/w).

• Korean Journal of Materials Research
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• v.10 no.3
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• pp.218-222
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• 2000

W-Ti film properties for X-ray absorber applications have been investigated with Ti composition have been investigated with Ti composition variation. W-Ti films were deposited by DC magnetron sputtering system. As the working pressure increases, film density decreases and film stress changes from compressive to tensile. The transition pressure (where the film stress in zero) and the stress gradient decrease by adding Ti into W-Ti(6.5 at.%) film shows the smallest stress gradient and transition pressure. It also shows high density ($17.7g/\textrm{cm}^3$) similar to that of pure-W ($17.8g/\textrm{cm}^3$) at the transition pressure. All the films show columnar structure, and its size decreases with increasing Ti composition. Surface roughness and thermal stability are improved by Ti-addition, resulting in a better property for X-ray absorber applications.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.418-424
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• 1996

(Ti.W)C complex carbide was synthesized by self-propagating high temperature synthesis (SHS) chemical furnace. Attempt to find the optimal condition for synthesis of (Ti.W)C the effects of molar ratio of Ti:W:C on the synthesized powders and mechanical properties were investigated, Optimum molar ratio of these synthe-sized powder was Ti:W:C=0.7:0.2:1.0 The bulk density M,O.R Hardness Fracture toughness of (Ti.W)C complex carbide sintered at 200$0^{\circ}C$ for 60 min by hot-pressing under the pressure of 20 MPa were 7.6g/cm3, 475 MPa, 17,.7 GPa respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.133-136
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• 2004

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.