• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.469-472
• /
• 2003

The nematic liquid crystal (NLC) aligning capabilities using a-C:H thin film deposited at the three kinds of rf bias condition were investigated. A high pretilt angle of about $11^{\circ}$ by the ion beam alignment method was observed on the a-C:H thin film (polymer-like carbon) deposited at 1W rf bias condition, and the low pretilt angle of the NLC was observed on the a-C:H thin film(diamond-like carbon) deposited at rf 30W and 60W bias condition. Consequently, the high NLC pretilt angle and the good aligning capabilities of LC alignment by the IB alignment method on the a-C:H thin film deposited at 1W rf bisa condition can be achieved.

• Journal of the Korean Vacuum Society
• /
• v.9 no.3
• /
• pp.233-236
• /
• 2000

The structural, electrical and chemical characteristics of Al alloy thin film with low impurity concentrations AlW deposited by using dc magnetron sputtering deposition are investigated for the applications as data bus line in the TFT-LCD panel. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at $300^{\circ}C$ for 20 min.. Moreover, the resistivity of AlW does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AlW is found to be hillock free. And for investigating chemical attack in TFT-LCD etching processing the electric potential of AlW alloy for Ag/AgCl were investigated by cyclic voltammetry. When W wt.% of AlW alloy was higher than about 3%, the electric potential of AlW was more positive than ITO's. Therefore AlW alloy thin film can be propose to use for data bus line.

• Korean Journal of Materials Research
• /
• v.4 no.6
• /
• pp.715-722
• /
• 1994

Thermochromic $Vo_{2}$ thin films for "smart windows" were prepared by electron beam evaporationmethod on a glass substrate and spectral transmittances were examined by spectrophotometer. Substratetemperature of $300^{\circ}C$ and annealing temperature of $400^{\circ}C$ were found to be effective to give athermochromism on $Vo_{2}$ thin film due to the crystallization of the thin film. Furthermore, annealing of$Vo_{2}$ thin film affected the spectral transmittance and reduced the transmittance significantly at wavelengthbelow 500nm.$V_{0.95}W_{0.05}O_{2}$ thin film doped by 5 atomic percent of W showed semiconductor-metal transition around 0$0^{\circ}V_{0.995}W_{0.005}O_{2}$thin film which contains 0.5 atomic percent Sn showed therrnochrornisrn when it was depositedat substrate temperature of $300^{\circ}C$ and annealed at $450^{\circ}C$ for 5 hours in argon gas. The transitiontemperature of the $V_{0.995}W_{0.005}O_{2}$ thin film was found to be about $25^{\circ}C$ and showed some hysterisis. and showed some hysterisis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.22-25
• /
• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• Journal of the Korean Magnetics Society
• /
• v.16 no.1
• /
• pp.75-78
• /
• 2006

In case of contacts between semiconductor and metal in semiconductor circuits, they become unstable because of thermal budget. To prevent these problems, we use diffusion barrier that has a good thermal stability between metal and semiconductor. So we consider the diffusion barrier to prevent the increase of contact resistance between the interfaces of metals and semiconductors, and the increase of resistance and the reaction between the interfaces. In this paper we deposited tungsten boron carbon nitride (W-B-C-N) thin film on silicon substrate. The impurities of the $1000\;{\AA}-thick$ W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between metal thin films $(Cu-2000\;{\AA})$ and silicon during the high temperature $(700\~1000^{\circ}C)$ annealing process.

• Journal of the Korean Electrochemical Society
• /
• v.6 no.4
• /
• pp.236-241
• /
• 2003

Magnetic CoW thin film alloys were electrodeposited from citrate baths to investigate the resulting microstructure and magnetic properties. Deposit tungsten (W) content in the films electrodeposited at $70^{\circ}C$ were independent of current density, while coercivity decreased from hard $(H_{c,//}\~150\;Oe\;and\;H_{c.{\bot}}\;\~240\;Oe)$ to soft magnetic properties $(H_{c,//}\~20\;Oe\;and\;H_{c.{\bot}}\;\~30\;Oe)$ with increasing current densities from $10\;to\;100mA{\cdot}cm^2$, with deposit W content $(\~40\%)$ relatively unaffected by the applied current density. X-ray diffraction analysis indicated that hcp $Co_3W$ phases [(200), (201) and (220) planes] in the CoW films electrodeposited at $70^{\circ}C\;and\;10mA{\cdot}cm^{-2}$ were dominant, whereas amorphous CoW phases with small amount of hcp $Co_3W$ [(002) planes] were dominant with deposition at $70^{\circ}C\;and\;100mA{\cdot}cm^{-2}$. At intermediate current densities $(25\;and\;50mA{\cdot}cm^{-2}),\;hop\;Co_3W$ phases [(200), (002), (201) and (220)] were observed. The average grain size was measured to be 30 nm from Sheller formula. It is suggested that the change of the deposit coercivities in the CoW thin films electrodeposited at $70^{\circ}C$ is attributed to the change of microstructures with varying the current density. Nanostructured $Co_3W/amorphous-CoW$ multilayers were fabricated by alternating current density between 10 and $100 mA{\cdot}cm^{-2}$, varying the individual layer thickness. The magnetic properties of $Co_3W/amorphous-CoW$ multilayers were strongly dependent on the thickness of the alternating hard and soft magnetic thin films. The nanostructured $Co_3W/amorphous-CoW$ multilayers exhibited a shift from low to high coercivities suggesting a strong coupling effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.566-569
• /
• 2001

In this paper, we investigated the electrical characteristics through DC power at manufacturing the MIS capacitor insulator AIN thin film based on reactive sputtering method. In case of deposition temperature 250$^{\circ}C$, pressure 5mTorr, total flow rate 8sccm(Ar:4sccm N2:4sccm), AIN thin film was deposited with changing DC power. As DC power increses, resistivity is observed a little increase. When AIN thin film is deposited at 100W, the result shows leakage current 10$\^$-8/A/$\textrm{cm}^2$ at 0.1MV/cm. Otherwise, In case of depositing at 150W and 200W, the result shows that the characteristic of leakage current is under 10$\^$-9//$\textrm{cm}^2$ at 0.1MV/cm. In C-V characteristic with DC power, deep depletion phenomenon is observed at inversion region in 100W and 150W. In 200W, that phenomenon, however, was showed to decrease. It shows that the hysterisis increases with being increasing DC power.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2003.02a
• /
• pp.70-70
• /
• 2003

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.6
• /
• pp.297-303
• /
• 2003

Mn-Ni-Co type thin films were prepared at various conditions by a rf magnetron sputtering system. At the condition. or substrate temperature of $300^{\circ}C$ and $Ar/O_2$= 10/0, a cubic spinel phase was obtained. When oxygen was included in process gas, a cubic spinel phase was not formed even after the thermal annealing at $900^{\circ}C$. The thermistor thin film had no other elements except Mn, Ni and Co. The infrared reflection spectra of the thermistor thin films showed that the films had somewhat high reflectance for incoming infrared ray with some angle. The etch rate of the thermistor thin films was about 63nm/min at a condition of DI water : $HNO_3$: HCl = 60 : 30 : 10 vol%. The B constant and temperature coefficient of resistance of the thermistor thin films were 3500 K and -3.95 %/K, respectively. The voltage responsivity of the thermistor thin film infrared sensor was 108.5 V/W and its noise equivalent power and specific detectivity were $5.1\times 10^{-7}$ W/$Hz^{-1/2}$ and $0.2\times 10^6$cm $Hz^{1/2}$/W, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.4
• /
• pp.751-755
• /
• 2007

We have studied the variable conditions of reactive sputtering to prepare AM thin film. The leakage current showed below $10^{-9}A/cm^2$ at the deposition temperature of $250^{\circ}C\;and\;300^{\circ}C$ in the field of 0.1 MV/cm, and it was gradually increased and to be saturated in 0.2 MV/cm. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 MV/cm, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism.