• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.200-204
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• 2011

In this paper, we deposited the tungsten carbon nitride (W-C-N; nitrogen gas flow of 2 sccm) and tungsten carbon (W-C) thin film on silicon substrate using rf magnetron sputter. Then the thin films annealed at $800^{\circ}C$ during 30 minute ($N_2$ gas ambient) for thermal damage. Nano-indenter was executed 16 points on thin film surface to measure the thermal stability, and we also propose the elastic modulus and the Weibull distribution, respectively. This nanotribology method provides statistically reliable information. From these results, the W-C-N thin film included nitrogen gas flow is more stable for film uniformities, physical properties and crystallinities than that of not included nitrogen gas flow.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.72-73
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• 2005

Stress behavior was studied to investigate the internal behaviors of boron, carbon, and nitrogen in the 1000${\AA}$-thick tungsten boron carbon nitride (W-B-C-N) thin films. The impurities in the W-B-C-N thin films provide stuffing effects that were very effective for preventing the interdiffusion between interconnection metal and silicon substrate during the subsequent high temperature annealing process. The resistivity of W-B-C-N thin film decreases as an annealing temperature increase. The W-B-C-N thin films have compressive stress, and the stress value decreased up to $4.11\times10^{10}dyne/cm^2$ as an $N_2$ flow rate increases up to 3 sccm.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.58-58
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• 2000

Recently low resistance of bus line is required for large screen size RFT-CLD panels. As a result, lower resistance Al-alloy is currently reviewed extensively. The resistivity is required smaller than 10$\mu$$\Omega$cm and high resistance of chemical attack is required. In this paper, Al-W thin film were deposited on glass substrates by D.C magnetron sputtering system under various condition for high chemical resistance. Its properties were characterized by SEM, AFM, XRD, 4-point-probe, and cyclic voltammertry. The optimal condition of Al-W was 10$0^{\circ}C$, 100W, 0.4Pa, 23sccm(Ar) and 35$0^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-W(3 wt.%) was about 11$\mu$$\Omega$cm. And when wt.% of W in Al-W alloy was higher than about 4%, Al-W alloy thin film has high chemical resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.173-174
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• 2007

반도체 소자가 발달함에 따라서 박막은 더욱 다층화 되고 그 두께는 줄어들고 있다. 따라서 소자의 초고집적화를 위해서는 각 박막의 두께를 더욱 작게 하여야 한다. 또한 반도체 소자 제조 공정에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 금속 배선과 Si기판 사이에는 필연적으로 확산방지막을 삽입하게 되었다. 기존의 연구에서는 $1000\;{\AA}$의 W-B-C-N 확산방지막을 제작하여 연구하였다. 이 논문에서는 Cu의 확산을 방지하기 위한 W-B-C-N 확산방지막을 다양한 두께로 제작하여 그 특성을 확인하여 초고집적화를 위한 더욱 얇은 두께의 W-B-C-N 확산방지막에 대하여 연구하였다. W-B-C-N 확산방지막의 두께 변화에 대한 특성을 확인하기 위하여 $900^{\circ}C$까지 열처리 한 후 그 면저항을 측정하였다.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.133-136
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• 2005

In the case of contacts between semiconductor and metal in semiconductor devices, they tend to be unstable because of thermal budget. To prevent these problems we deposited W-C-N diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of the barrier is $1,000{\AA}$ and the pressure is 3 mTorr during the deposition. In this work we coated LSMO (CMR material) on W-C-N diffusion barrier and then we studied the interface effects between LSMO layer and W-C-N diffusion barrier. We got results that the magnetic characteristics of LSMO thin film are still maintained after annealing at $800^{\circ}C$ for 3 hr because W-C-N thin diffusion barrier was prevented the diffusion of oxygen between LSMO and Si substrate.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.266-270
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• 2011

This paper suggest tungsten (W)-carbon (C)-nitrogen (N) thin films for diffusion barrier that W is main material and C and N are additives. W-C-N thin films are deposited with fixed rates of W and C but with a variation of $N_2$ gas flow and W-C-N thin films are heated at $600^{\circ}C$. From the experimental results, the variation of elastoplastic region for W-C-N thin film measured by tribological property is larger than that of elastic region with a variation of $N_2$ gas flow. These results show that the $N_2$ gas flow is more directly related with the elastoplastic region of W-C-N thin film. Nanoindenting test executed 16 times consecutively and we got the stress-strain curve graphs and hardness datas at each sample. Through the stress-strain curve graphs, the standard diviation of stress-strain curve for $N_2$ gas flow rate of 2.0 sccm is smaller than that of 0, 0.5, 1.5 sccm. Consequently, the physical stability of W-C-N thin film depends on the flow rate of $N_2$ gas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1019-1022
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• 2003

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film as working gas at 30W rf bias condition. A high pretilt angle of about 5$^{\circ}$ by ion beam(IB) exposure on the a-C:H thin film surface was measured. A good LC alignment by the IB alignment method on the a-C:H thin film surface was observed at annealing temperature of 250$^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of 300$^{\circ}C$. Consequently, the high LC pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C:H thin film surface as working gas at 30W rf bias condition can be achieved.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.348-352
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• 2007

In submicron processes, the feature size of ULSI devices is critical, and it is necessary both to reduce the RC time delay for device speed performance and to enable higher current densities without electromigration. In case of contacts between semiconductor and metal in semiconductor devices, it may be very unstable during the thermal annealing process. To prevent these problems, we deposited tungsten carbon nitride (W-C-N) ternary compound thin film as a diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of W-C-N thin film is $1,000{\AA}$ and the process pressure is 7mTorr during the deposition of thin film. In this work we studied the interface effects W-C-N diffusion barrier using the XRD and 4-point probe.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.97-101
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• 2004

W $O_{x}$-based semiconductor type thin film gas sensor was fabricated for the detection of N $O_{x}$ by reactive d.c. sputtering method. The relative oxidation state of the deposited W $O_{x}$ films was approximately compared by the calculation of the difference of the binding energy between Ols to W4 $f_{7}$2/ core level XPS spectra in the standard W $O_3$ powder of known composition. As the annealing temperature increased from 500 to 80$0^{\circ}C$, relative oxygen contents and grain size of the sputtered films were gradually increased. As the results of sensitivity ( $R_{gas}$/ $R_{air}$) measurements for the 5 ppm N $O_2$ gas, the sensitivity was 110 and the sensor showed recovery time as fast as 200 s. The other sensor properties were examined in terms of surface microstructure, annealing temperature, and relative oxygen contents. These results indicated that the W $O_3$ thin film with well controlled structure is a good candidate for monitoring and controlling of automobile exhaust.haust.t.t.t.