• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.7
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• pp.762-768
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• 2003

This paper reports the effects of gain flatness for linearity improvement of feedforward power amplifier fur IMT-2000 band. To investigate the operational characteristics for gain flatness of each amplifier, WCDMA 4FA input signal was used and measured 10 W output power. Especially, linearity improvement for variation of gain flatness of each amplifier was investigated that have an effect on linearity improvement such as delay line, phase, and amplitude imbalances. Variation of gain flatness of main amplifier is 40 MHz and of error amplifier is 40 MHz and 80 MHz bandwidth, respectively. Measured results, gain flatness of main amplifier is less than 1.5 dB and of error amplifier is less than 0.5 dB for more than 20 dB improvement at 5 MHz offset. In addition to that results, the characteristics of feedforward amplifier are drastically varied by gain flatness of error amplifier and it is shown that gain flatness of error amplifier is more important factor for linearity improvement.

• Journal of Korea Multimedia Society
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• v.25 no.8
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• pp.1022-1037
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• 2022

It is important to develop a transducer that generates uniform output power through frequency control of the HIFU at 4 MHz frequency for the high intensity focused ultrasound (HIFU) skin diseases treatment. In this paper, a 4 MHz frequency band HIFU system for skin disease treatment was designed, manufactured and developed. In HIFU, even for the ultrasonic vibrator in the 4 MHz frequency band, the characteristics of the output power of the HIFU are different depending on the difference in the thickness of the PZT material. Through the development of a system amplifier, the sound output of the HIFU transducer was improved to more than 48 W and uniform output power control was possible. And, it is possible to control the output power even in a frequency band of 4.0 to 4.7 MHz, which is wider than 4.0 MHz, and shows the resonance frequency of the transducer. The maximum output power for each frequency was 49.969 W and the minimum value was 48.018 W. The maximum output power compared to the minimum output power is 49.969 W, which is uniform within 4.1%. It was confirmed that the output power of the HIFU through the amplifier can be uniformly controlled in the 4 MHz frequency band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.9
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• pp.1079-1086
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• 2012

In this paper, X-band 60 W Solid-State Power Amplifier with sequential control circuit and pulse width variation circuit for improve bias of SSPA module was designed. The sequential control circuit operate in regular sequence drain bias switching of GaAs FET. The distortion and efficiency of output signals due to SSPA nonlinear degradation is increased by making operate in regular sequence the drain bias wider than that of RF input signals pulse width if only input signal using pulsed width variation. The GaAs FETs are used for the 60 W SSPA module which is consists of 3-stage modules, pre-amplifier stage, driver-amplifier stage and main-power amplifier stage. The main power amplifier stage is implemented with the power combiner, as a balanced amplifier structure, to obtain the power greater than 60 W. The designed SSPA modules has 50 dB gain, pulse period 1 msec, pulse width 100 us, 10 % duty cycle and 60 watts output power in the frequency range of 9.2~9.6 GHz and it can be applied to solid-state pulse compression radar using pulse SSPA.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.1
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• pp.1-9
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• 2017

In this paper, ETRI's $0.25{\mu}m$ GaN MMIC process is introduced and the fabricated results of X-Band 3 W power amplifier MMIC are discussed. The one-stage X-Band 3 W power amplifier MMIC using the $0.25{\mu}m$ GaN MMIC devices has been designed and fabricated. From the fabricated GaN MMIC, the characteristics of the $0.25{\mu}m$ GaN MMIC process and devices are evaluated and analyzed. The X-band power amplifier MMIC shows output power of 3.5 W, gain of 10 dB, and power-added efficiency of 35 %.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.12
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• pp.1331-1336
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• 2014

In this study, we have implemented a PAM(Power Amplifier Module) with 25W output power using by cooperate divider/Combiner circuit in X-band to minimize combine loss on a Al2O3 substrate. The PAM(Power Amplifier Module) is consisted of MMIC and 10way traveling wave divider/Combiner with proposed structure what have showed that 45.2dBm output power, 16dB gain, PAE 26 % and 17dBc@44dBm IMD3 characteristics. This combine/divider structure can be used when multistage passive divider and combiner needs. especially, power amplifier with very compact size.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.6
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• pp.27-27
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• 2002

In this paper, the LPA(Linear Power Amplifier) using new analog feedforward linearizer for IMT-2000 frequency band(2110MHz∼2170MHz) is proposed and fabricated. The designed analog feedforward linearizer system possessing the characteristics of stable operation for input power variation is simple structure and small size. When two-tones in IMT-2000 frequency band are applied to an amplifier, this LPA have the average output power is about 30W and the IMD value is below about 60dBc without correcting the circuit. In camparision with an amplifier without feedforward system at the same output power, the supposed analog feedforward linear amplifier posseses improved the IMD characteristics of over 23dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.6
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• pp.285-291
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• 2002

In this paper, the LPA(Linear Power Amplifier) using new analog feedforward linearizer for IMT-2000 frequency band(2110MHz∼2170MHz) is proposed and fabricated. The designed analog feedforward linearizer system possessing the characteristics of stable operation for input power variation is simple structure and small size. When two-tones in IMT-2000 frequency band are applied to an amplifier, this LPA have the average output power is about 30W and the IMD value is below about 60dBc without correcting the circuit. In camparision with an amplifier without feedforward system at the same output power, the supposed analog feedforward linear amplifier posseses improved the IMD characteristics of over 23dB.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.91-96
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• 2005

In this paper, describes the design and performance of a 1.5 kW solid-state pulsed power amplifier, operating over 2.7-2.9 GHz at a duty of 10% and with a pulse width of 100 us for radar application. The solid-state pulsed power amplifier configures a series of 8-stage cascaded power amplifier with different RF output power levels. Low loss Wilkinson combiners are used to combine output powers of six 300W high power solid state modules. Tests show peak output power of 1.61 kW, corresponding to PAE of 26.2% over 2.7-2.9 GHz with pulse width of 100 us and a PRF of 1 kHz.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.113-117
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• 2003

This paper describes the design and the simulation results of the RF CMOS Class-E Power Amplifier for a 2.4GHz ISM band. This circuit is composed two connected amplifiers. where Class F amplifier drives Class E amplifier. The proposed circuit can reduce the total power dissipation of the driving stage and can work with higher efficiency. The power amplifier has been implemented in a standard $0.25{\mu}m$ CMOS technology and is shown to deliver 100mW output power to load with 41% power added efficiency(PAE) from a 2.5V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.1
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• pp.8-11
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• 2019

In this paper, a Ku-band 50-W internally-matched power amplifier is designed and fabricated using a CGHV1J070D GaN HEMT from Wolfspeed. To obtain the same magnitudes and phases for the output signals of the unit transistor cells, which constitute a power transistor, a slit pattern and an asymmetric T-junction are used in the input and output matching circuits. The internally-matched power amplifier is fabricated on two different thin-film substrates with relative dielectric constants of 40 and 9.8, respectively, and is measured under pulsed conditions with a pulse period of $330{\mu}s$ and a duty cycle of 6%. The measured results show a maximum output power of 50~73 W, a drain efficiency of 35.4~46.4%, and a power gain of 4.5~6.5 dB from 16.2 to 16.8 GHz.