• Journal of Microbiology and Biotechnology
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• v.22 no.10
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• pp.1432-1440
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• 2012

Weissella confusa 31, an isolate from human feces, possesses desirable properties as a probiotic strain, including bile salt resistance. W. confusa 31 is not inhibited by bile salts up to 0.3% concentration. Proteins affected by bile salts (0.05%) were examined by 2-D gel electrophoresis. Our proteomic analyses revealed that the intensities of 29 spots were changed, where 17 increased (including 2 spots observed only under the bile salts stress conditions) and 12 decreased. Proteins were identified by MALDI-TOF mass spectrometry. Proteins increased in the band intensities included adenylate kinase (12.75-fold increase), Clp-like ATP-dependent protease (11.91-fold), 6-phosphogluconate dehydrogenase (10.35-fold), and HSP 70 (5.07-fold). Some of the increased or decreased proteins are also known to be involved in other types of stress responses.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.5
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• pp.377-387
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• 2012

A single-phase grid-connected PV system is known as suitable for housing of less than 3 kW. The DC link voltage in a single-phase PV system has necessarily twice component of fundamental wave. It makes high THD in the grid current. According to the problem, power quality is lower. Many engineers have studied about this problem. The most simple method is to use low pass filter on DC link voltage control. However it is affected by DC link voltage control bandwidth. If cutoff frequency is reduced to increase the performance of low pass filter, it also lowers DC link voltage control bandwidth. Second method is using band stop filter, it works good on steady state but not good on transient state. This paper proposes the new method for removing ripple voltage to get an exact current reference. It improves the responses on steady state and transient state. The performance was verified through computer simulation using MATLAB and actual experiments.

• Journal of Power Electronics
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• v.18 no.1
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• pp.23-33
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• 2018

Silicon Carbide (SiC) MOSFET belongs to the family of wide-band gap devices with inherit property of low switching and conduction losses. The stable operation of SiC MOSFET at higher operating temperatures has invoked the interest of researchers in terms of its application to high power density (HPD) power converters. This paper presents a performance study of SiC MOSFET based two-phase interleaved boost converter (IBC) for regulation of avionics bus voltage in more electric aircraft (MEA). A 450W HPD, IBC has been developed for study, which delivers 28V output voltage when supplied by 24V battery. A gate driver design for SiC MOSFET is presented which ensures the operation of converter at 250kHz switching frequency, reduces the miller current and gate signal ringing. The peak current mode control (PCMC) has been employed for load voltage regulation. The efficiency of SiC MOSFET based IBC converter is compared against Si counterpart. Experimentally obtained efficiency results are presented to show that SiC MOSFET is the device of choice under a heavy load and high switching frequency operation.

• Proceedings of the KIEE Conference
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• 2001.10a
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• pp.180-182
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• 2001

Input Current Correction of Single-Phase Buck Rectifier is studied in the paper. To sinusoidal waveform the input current with a near-unity power factor over a wide variety of operating conditions, the output capacitor is operated with voltage reversibility for the supply by arranging the auxiliary diode and power switching device. Then the output voltage is superposed on the input voltage during on time duration of power switching devices in order to minimize the input current distortion caused by the small input voltage when changing the polarity. The tested setup, using two insulated-gate bipolar transistors(IGBT) and a microcomputer, is implemented and IGBT are switched with 20[kHz], which is out of the audible band. Moreover, a rigorous state-space analysis is introduced to predict the operation of the rectifier. The simulated results confirm that the input current can be sinusoidal waveform with a near-unity power factor and a satisfactory output voltage regulation can be achieved.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.93-93
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• 2000

수소화된 비정질 탄소(a-C:H)는 그 증착 조건에 따라서 여러 가지 다른 구조와 특성을 갖게 되며, 특히 DLC(diamond-like carbon) 및 CNT(Carbon nanotube)는 FED (field emission display) 개발 면에서 중요하게 연구되고 있다. 우리는 a-C:H 박막을 PECVD (plasma-enhanced chemical vapor deposition) 방법으로 증착하고 CH4 가스를 사용하였고 기판 온도는 상온-32$0^{\circ}C$ 사이에서 변화되었다. 기판은 Corning 1737 glass, quartz, Si, Ni 등을 사용하였다. 증착 압력과 R.F. power는 각각 0.1-1 Torr 와 12-60w 사이에서 변화되었다. ESR 측정은 X-band(주파수 약 9 GHz)에서 그리고 상온에서 행해졌다. 상온에서의 스핀밀도는 약한-표준피치(weak-pitch standard) 스펙트럼과 비교하여 얻을 수 있었다. 그리고 a-C:H 박막의 구조는 He-Ne laser(파장 632.8 nm)를 이용하는 micro-Raman spectroscopy로 분석하였다. 증착조건에 따른 스핀밀도의 변화 및 Raman 스펙트럼에서의 D-peak, G-peak의 위치 및 반치록, I(D)/I(G) 등을 조사하였다. 증착된 a-C:H 박막은 R.F.power가 증가할수록 대체로 스핀밀도가 증가하였으며, Raman 스펙트럼에서의 I(D)/I(G) 비율은 대체로 감소하였다. 증착된 박막들은 polymer-like Carbon으로 추정되었으며, 스핀밀도가 증가할수록 대체적으로 흑연 구조 영역이 증가됨을 알 수 있었다. 또한 glass나 Si 기판에 비해 Ni 기판위에서 polymer-like Carbon 구조는 향상되는 경향을 보였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.91-91
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• 2000

a-C:H 혹은 a-SiC:H 박막은 광전소자 및 태양전지 등의 개발에 있어서 중요한 물질이다. 우리는 a-C:H 및 a-SiC:H 박막을 PECVD (plasma-enhanced chemical vapor deposition) 방법으로 증착시키고, 박막의 가열에 따른 스핀밀도의 변화를 ESR (electron spin resonance) 측정을 통하여 조사하였다. PECVD 증착가스는 Ch4, SiH4 가스를 사용하였고, 기판은 Corning 1737glass를 사용하였으며, 기판 온도는 300-40$0^{\circ}C$, 증착 압력은 0.1-0.3 Torr, r.f. 전력은 3-36W 사이에서 변화되었다. ESR 측정은 상온 X-band 영역에서 수행되었고, modulation amplitude는 2.5G, modulation frequency는 100kHz 이었다. a-C:H 혹은 a-SiC:H 박막은 진공상태의 reactor, 혹은 공기중의 furnace 안에서 300-50$0^{\circ}C$ 영역에서 3-8시간 정도 가열되거나, 혹은 상온에서 약 50$0^{\circ}C$ 정도까지 단계적으로 가열되었다. 증착된 a-C:H 박막의 초기 구조는 Raman 측정으로부터 polymer-like Carbon으로 추정되었으며, 300-35$0^{\circ}C$ 가열시 초기 1시간 정도 사이에는 스핀밀도가 증가되었으나, 그 후 8시간 정도까지의 가열의 경우에도 대체로 동일하게 나타났다. 또한 상온으로부터 약 50$0^{\circ}C$까지 단계적으로 온도를 높여주며, 각 단계마다 1시간씩 가열했을 때도 30$0^{\circ}C$ 정도까지는 스핀밀도가 증가하다가 더 높은 온도로 가면서 다시 스핀밀도가 감소함을 볼 수 있었다. 이러한 스핀밀도의 초기 증가 및 감소를 일으키는 메카니즘에 대해서 논의해 볼 것이다.

• International Journal of High-Rise Buildings
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• v.8 no.2
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• pp.117-123
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• 2019

Tall buildings are prone to wind-induced vibrations due to their slenderness whereby peak structural accelerations may be higher than the recommended maximum value. The common countermeasure is the installation of a tuned mass damper (TMD) near the highest occupied floor. Due to the extremely large modal mass of tall buildings and because of the narrow to broad band type of wind excitation the TMD mass may become inacceptable large - in extreme cases up to 2000 metric tons. It is therefore a need to develop more efficient TMD concepts which provide the same damping to the building but with reduced mass. The adaptive TMD concept described in this paper represents a solution to this problem. Frequency and damping of the adaptive TMD are controlled in real-time by semi-active oil dampers according to the actual structural acceleration. The resulting enhanced TMD efficiency allows reducing its mass by up to 20% compared to the classical passive TMD. The adaptive TMD system is fully fail-safe thanks to a smart valve system of the semi-active oil dampers. In contrast to active TMD solutions the adaptive TMD is unconditionally stable and its power consumption on the order of 1 kW is negligible small as controllable oil dampers are semi-active devices. The adaptive TMD with reduced mass, stable behavior and lowest power consumption is therefore a preferable and cost saving damping tool for tall buildings.

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.38-43
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• 2009

To investigate the effect of RF power on the structural, optical and electrical properties of amorphous InGaZnO (a-IGZO), its thin films and TFTs were prepared by RF magnetron sputtering method with different RF power conditions of 40, 80 and 120 W at room temperature. In this study, as RF power during the deposition process increases, the RMS roughness of a-IGZO films increased from 0.26 nm to 1.09 nm, while the optical band-gap decreased from 3.28 eV to 3.04 eV. In the case of the electrical characteristics of a-IGZO TFTs, the saturation mobility increased from $7.3cm^2/Vs$ to $17.0cm^2/Vs$, but the threshold voltage decreased from 5.9 V to 3.9 V with increasing RF power. It is regarded that the increment of RF power increases the carrier concentration of the a-IGZO semiconductor layer due to the higher generation of oxygen vacancies.

• International Journal of Korean Welding Society
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• v.1 no.2
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• pp.23-29
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• 2001

In this study, a preview-sensing visual sensor system is constructed far weld seam tracking in GMA welding. The visual sensor system consists of a CCD camera, a diode laser system with a cylindrical lens, and a band-pass-filter to overcome the degrading of image due to spatters and/or arc light. Among the image processing methods, Hough transform method is compared with the central difference method from a viewpoint of the capability for extracting the accurate feature position. As a result, it was revealed that Hough transform method can more accurately extract the feature positions and it can be applied to real time weld seam tracking. Image processing which includes Hough transform method is carried out to extract straight lines that express laser stripe. After extracting the lines, weld joint position and edge points are determined by intersecting the lines. Even though the image includes a spatter trace on it, it is possible to recognize the position of weld joint. Weld seam tracking was precisely implemented with adopting Hough transform method, and it is possible to track the weld seam in the case of offset angle is in the region of $\pm$ $15^{\circ}$.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4625-4635
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• 2022

A low-energy dielectric loaded accelerator with a non-uniform, multi-segment structure is studied and optimized. So far, no analytical solution is provided for such structures. Also, due to the existing nonlinear behavior and a large number of geometric parameters, the problem of numerical optimizations is complex. For this reason, a method is presented to design and optimize such structures using the Genetic Algorithm (GA). Moreover, the GA output results are compared with Trust Region (TR) and Nelder-Mead Simplex (NMS) methods. Comparative results show that the GA is more efficient in achieving optimization goals and also has a higher speed than the two other methods. Finally, an optimized accelerating tube is integrated into a proper coupler. Then, the accelerator is simulated for full electromagnetic investigations using the CST suite of codes. This design leads to a structure with a power of about 80 kW in the X-band, which delivers electrons to the output energy in the range of 300-459 kV. The length and outer diameter of the accelerating tube obtained are 10 cm and 1 cm, respectively.