• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.81-81
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• 2007

Chemical mechanical polishing (CMP) 공정은 deep 서브마이크론 집적회로의 다층배선구조률 실현하기 위해 inter-metal dielectric (IMD), inter-layer dielectric layers (ILD), pre-metal dielectric (PMD) 층과 같은 절연막 외에도 W, Al, Cu와 같은 금속층을 평탄화 하는데 효과적으로 사용되고 있으며, 다양한 소자 제작 및 새로운 물질 등에도 광범위하게 응용되고 있다. 하지만 Cu damascene 구조 제작으로 인한 CMP 응용 과정에서, 기계적으로 깨지기 쉬운 65 nm의 소자 이하의 구조에서 새로운 저유전상수인 low-k 물질의 도입으로 인해 낮은 하력의 기계적 연마가 필요하게 되었다. 본 논문에서는 전기화학적 기계적 연마 적용을 위해, I-V 특성 곡선을 이용하여 active, passive, transient, trans-passive 영역의 전기화학적 특성을 알아보았으며, Cu 막의 표면 형상을 알아보기 위해 scanning electron microscopy (SEM) 측정과 energy dispersive spectroscopy (EDS) 분석을 통해 금속 화학적 조성을 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.165-165
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• 2007

투명전도박막은 ITO, $SnO_2$, ZnO, 등이 있으나 $SnO_2$는 자외선 영역까지 투과시키는 우수한 광학적 특성을 나타내지만, 상당히 큰 전기저항으로 인해 현재는 현재 ITO가 널리 이용되고 있다. ITO(Indium Tin Oxide)박막은 자외선 영역에서 반사율이 높으며 가시광선영역에서는 80%이상의 뛰어난 투과율을 가지고 있다. 또한 낮은 전기저항과 넓은 광학적 밴드갭 때문에 가장 유용한 투과전도성 재료 중에 하나이다. 이러한 특성 때문에 여러 가지 문자 표시소자의 투명전극, 태양전지의 창재료, 정전차폐를 위한 반도체 포장재료, 열반사막, 면발열체, 광전변환 소자에 응용되고 있다. 일반적으로 박막의 제작에는 저항가열법과 전자선가열법, 스퍼터링법의 물리적 증착과 화학적 증착으로 나뉜다. 본 논문에서는 증착온도를 달리 하여 RF-sputtering에 의해 ITO박막을 증착한 후 온도증가에 따른 박막의 특성을 연구하였으며 또한 광역평탄화를 위한 CMP공정을 적용하여 증착온도가 연마에 미치는 영향을 연구하였다. 본 실험에서 사용된 ITO박막은 $2{\times}2Cm$의 Corning glass위에 증착되었으며 타겟은 $In_2O_3$와 $SnO_2$가 9:1로 혼합된 Purity 99.99%이상의 직경 2 inch인 ITO타겟을 사용하였다. 박막 증착시 기판온도는 상온에M $200^{\circ}C$까지 변화시켰으며 RF power는 100W로 일정하게 하였으며 증착압력은 $8{\times}10^{-2}$Torr이였다. CMP공정조건은 헤드속도 60rpm, 플레이튼 속도 60rpm, 슬러리 주입 유량 60mml/min, 압력 $300g/cm^2$이였다. 전기적 특성은 four point probe를 이용하여 측정하였으며 광학적 특성은 UV-Visible Spectrometer를 이용하여 200~900nm의 파장범위에서 광투과도를 측정하였다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.29 no.3 s.234
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• pp.432-438
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• 2005

CMP characteristics such as material removal rate and edge effect were measured and investigated in accordance with pad grooving effect, groove width, depth and pitch. GSQ (Groove Stiffness Quotient) and GFQ (Groove Flow Quotient) were proposed to estimate pad grooving characteristics. GSQ is defined as groove depth(D) divided by pad thickness(T) and GFQ is defined as groove width(W) divided by groove pitch(P). As GFQ value increased, material removal rate increased some point but gradually saturated. It seems that material removal rate is not affected by each parameter respectively but by interaction of these parameters such as groove dimensions. In addition, an increase in GFQ and GSQ causes edge effect to be improved. Because, pad stiffness decreases as GSQ and GFQ increase. In conclusion, groove influences relative pad stiffness although original mechanical properties of pad are unchanged by grooving. Also, it affects the flow of slurry that has an effect on the lubrication regime and polishing results. The change of groove dimensions has influence on pad stiffness and slurry flow, so that polishing results such as removal rate and edge effect become changed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.37-38
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• 2013

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.106.1-106
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• 1998

• Analytical Science and Technology
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• v.19 no.5
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• pp.394-399
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• 2006

The polishing performance and the relationships of electrochemistry depending upon oxidizers and additives in the tungsten CMP slurry used in semiconductor industry were investigated. Hydrogen peroxide, ferric nitrate and potassium iodate were used as oxidizers and they showed different oxidation reactions on tungsten film depending on the kind of oxidizers and pH of slurry. The differences influenced the polishing performance. Etching reaction was predominated in the hydrogen peroxide. However, passivation reaction was prevailed in ferric nitrate and potassium iodate. TMAH and KOH raised the potential energy and removal rate of tungsten, and improved a dispersion characteristic of slurry by increasing absolute value of zeta potential. Addition of 100 ppm of poly(acrylic acid) of M.W. 250,000 improved dispersion ability.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2446-2452
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• 2012

In order to meet the recently enhanced emission standards at home and abroad, it is necessary to develop the CRDI ECU control algorithm that users can adjust fuel injection timing and amount in response to their needs. Therefore, this study developed the simulator for knocking analysis that enables knocking discrimination and engine balance correction applicable to the ECU exclusive to the industrial CRDI engine. The purpose of this study is to provide the driver-oriented diagnostic service that enable drivers to diagnose vehicles directly by developing diagnostic devices for vehicles with ths use of the results of the developed simulator for knocing analysis according to the OBD-II standards. For this purpose, this study aims to improve the fuel efficiency of vehicles by proposing the S/W design method of the OBD-II diagnosis device that can provide real-time communcations with the use of wired system and bluetooth module as a wireless system to send and recevice automobile fault diagnosis signal and sensor output signal, and to suggest an improvement for engine efficiency by minimizing the generation of harmful exhaust gas.

• The Korean Journal of Food And Nutrition
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• v.18 no.4
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• pp.316-324
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• 2005

The objectives of this study were to examine effect of ion chip and yellow soil on the growth and physicochemical characteristics of soybean sprouts. The weight and length increased rapidly in soybean sprouts cultivated for 4 days and then the increases slowed. Ascorbic acid increased rapidly after day 6 in soybean sprouts cultivated with ionized water (I.W), $1.0\%$ yellow soil in tap water (T.W+l.0) and $1.0\%$ yellow soil in ionized water (I.W+l.0). The detected content of minerals such as Mg, Ca, K and Fe in soybean sprouts was higher than other minerals. Iron content was the highest in soybean sprouts cultivated by I.W+1.0. The detected levels of glutamic acid in soybean sprouts cultivated for 4 days with ionized water was higher than in those grown with tap water. In all soybean sprouts, nucleotides such as UMP, CMP, AMP, Hx and soluble free sugars like sucrose, raffinose, stachylose were detected, and the levels of UMP were found to be the highest among nucleotides and sucrose among free sugars.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.435-437
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• 2002

Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries: and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.19-20
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• 2010