• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.233-237
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• 2002

A giga-bit DRAM(dynamic random access memory) technology with W/WNx/poly-Si dual gate electrode is presented in 7his papers. We fabricated $0.16\mu\textrm{m}$ CMOS using this technology and succeeded in suppressing short-channel effects. The saturation current of nMOS and surface-channel pMOS(SC-pMOS) with a $0.16\mu\textrm{m}$ gate was observed 330 $\mu\A/\mu\textrm{m}$ and 100 $\mu\A/\mu\textrm{m}$ respectively. The lower salutation current of SC-pMOS is due to the p-doped poly gate depletion. SC-pMOS shows good DIBL(dram-induced harrier lowering) and sub-threshold characteristics, and there was no boron penetration.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.193-196
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• 2002

This paper presents the improvement of the boron penetration and the reverse short channel effect (RSCE) in the 130nm W/WNx/Poly-Si dual gate PMOSFET for a high performance embedded DRAM. In order to suppress the boron penetration, we studied a range in the process heat budget. It has shown that the process heat budget reduction results in suppression of the boron penetration. To suppress the RSCE, we experimented with the halo (large tilt implantation of the same type of impurities as those in the device well) implant condition near the source/drain. It has shown that the low angle of the halo implant results in the suppression of the RSCE. The experiment was supported from two-dimensional(2-D) simulation, TSUPREM4 and MEDICI.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.29-33
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• 2000

The amorphous tungsten nitrides, WNx, film could be fabricated by reactive sputtering process. The nitrogen concentration for the amorphization ranges from 10 at% to 40at%. The amorphous $W_{67}N_{33}$ film was crystallized into low resistivity $\alpha$-tungsten phase with equiaxed grains and excess nitrogen after the rapid thermal annealing for 1min at 1273K, which was similar to the resistivity of the sputtered pure tungsten film. The excess nitrogen was depleted from $\alpha$-tungsten crystals and then segregated at $\alpha$-tungsten/poly-Si interface. The segregated nitrogen has favored the formation of the homogeneous diffusion barrier layer comprised of silicon nitride, $Si_3N_4$, nano-crystals, which undertaken the inhibition of the high resistivity tungsten silicide reaction.