• 제목/요약/키워드: W(110)

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W(110)위에 성장한 Fe 웃층의 전자 및 자기적 성질 (The Electronic and Magnetic Properties of Fe Overlayers on W(110))

  • 홍순철;이재일
    • 한국자기학회지
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    • 제1권2호
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    • pp.1-8
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    • 1991
  • 비자성 천이금속인 W의 (110)표면 위에 성장한 강자성 Fe 원자층의 전자적 성질 및 자기적 성질을 국소밀도근사 범위 내의 Full Potential Linearized Augmented Plane Wave (FLAPW) 방법을 이용하여 계산하였다. 이 계산에서 W, Fe의 층간 거리는 bull값을 이용하였으며 표면이완 및 계면이완은 고려하지 않았다. 전하밀도, 스핀밀도, 자기 모멘트, 접촉 초미세장, 2차원 띠구조, 각층의 상태밀도 등의 계산결과를 제시하였다. Fe 웃층이 1층인 경우, Fe의 자기모멘트는 2.56 ${\mu}_B$로 bulk에 비해 16% 증가하였고, Fe 웃층이 2층인 경우 표면 및 계면을 이루는 Fe층의 자기 모멘트는 각각 2.90과 2.30 ${\mu}_B$로 평균 자기모멘트는 bulk에 비해 약 18% 증가한 것으로 나타났다. Fe 층수가 1층일 때 자기초미세장의 크기는 2층일 때와는 큰 차이를 보여주고 있다. 깨끗한 Fe(110)의 결과와 비교함으로써 W과의 띠혼합 효과와 격자상수 확장 효과에 대해 논의하고 실험결과의 계산결과를 비교 검토하여 보았다.

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철손밀도 분포에 의한 열원이 고려된 3차원 열등가회로망을 이용한 경량전철 구동용 110kW급 IPMSM의 열 특성 연구 (A Study on the Thermal Characteristics of 110kW-class IPMSM for Light Railway Transit using the 3-Dimensional Thermal Equivalent Network considering Heat Source by Iron Loss Density Distributions)

  • 박찬배
    • 전기학회논문지
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    • 제62권7호
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    • pp.1038-1044
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    • 2013
  • A research on thermal analysis method is conducted for the characterization of heat generation during operation of Interior Permanent Magnet Synchronous Motor(IPMSM) for Light Railway Transits(LRT) in this paper. Efficient cooling of the heat generated in the IPMSM is important because the excessive heat generated from the winding, core and permanent magnet makes it harder for a long time continuous operation of IPMSM. Therefore, in order to analyze the heat generation characteristics of the 110kW-class IPMSM as advanced research for application the IPMSM to the cooling device, the heat transfer coefficients for each component of the 110 kW-class IPMSM were derived and the thermal equivalent network was configured to perform the thermal analysis in this study. Finally, the 110kW-class IPMSM prototype is made and a comparative verification between the test data and the thermal analysis results through its various performance tests are carried out.

Ni 함량과 W 결정립 크기에 따른 W-Ni 활성소결체의 고온압축 특성 (Effect of the Ni Content and W Grain Size on the High Temperature Com-pressive Properties of W-Ni Activated Sintered Parts)

  • 박영삼;오승탁;양주환;김영도;문인형
    • 한국분말재료학회지
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    • 제11권2호
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    • pp.149-157
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    • 2004
  • High temperature deformation behavior of activated sintered W powder compacts was investigated. The compression tests were carried out in the temperature range between 900 and 110$0^{\circ}C$ at the strain rate of $10^{-3}s^{-1}$. The sintered specimens of Ni-doped submicron W powder compacts showed decrease in W grain size with increasing the Ni content. As the result, the flow stress was significantly increased with increasing the Ni content. We obtained Ni-activated sintered W compacts with the relative density of 94 $\pm$ l%and the average grain size of less than 5${\mu}{\textrm}{m}$. A moderate true strain up to 0.60 was obtained without fracture even at 110$0^{\circ}C$ with the strain rate of $10^{-3}s^{-1}$ for the activated W compact despite adding the 1.0 wt%Ni to submicron W powder.

110W용 T5 형광 램프용 전자식 안정기 개발 (Development of Electronic Ballast for 110W T5 Fluorescence Lamp)

  • 이진우;최현배;박재권
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2004년도 학술대회 논문집
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    • pp.183-184
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    • 2004
  • 비교적 최근에 개발된 T5 형광 램프를 점등시키기 위한 전자식 안정기를 개발하였다. 램프는 110W의 정격을 갖고, 그 길이는 2300mm이다. 제작한 안정기는 우수한 기동특성을 보였으며 안정된 전기적, 광학적 특성을 얻을 수 있었다.

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W(110)면에서의 산소의 확산 : 실험과 이론의 비교 (Oxygen diffusion on W(110) : Comparison of experiment and theory)

  • 남창우;홍진표;김채옥
    • 한국진공학회지
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    • 제8권3A호
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    • pp.181-186
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    • 1999
  • The diffusion of oxygen atoms on tungsten (110) surface is studied by comparison of experiment results and recent calculations. It has been suggested that the thermodynamic factor which is inversely proportional to be compressibility has strong temperature dependence which may cause non-Arrhenius behavior of diffusion coefficient. Recent experiments, however, indicate effectively no temperature dependence of this factor and support the view that non-Arrhenius behavior originates from the dynamic factor rather than the thermodynamic factor. Discrepancies in coverage dependence of physical quantities between theory and experiment are discussed.

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The Adsorptions and Configurations of CO Molecules on W (110) and W (100) Surface: Molecular Orbital Theory

  • Choe, Sang-Joon;Kang, Hae-Jin;Park, Dong-Ho;Huh, Do-Sung;Lee, Soon-Bo
    • Bulletin of the Korean Chemical Society
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    • 제25권9호
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    • pp.1314-1320
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    • 2004
  • The adsorption and configuration of CO molecules adsorbed on W (110) and W (100) surfaces have been calculated by the atomic superposition and electron delocalization molecular orbital (ASED-MO) method. Referred to as the ASED-MO method, it has been used in the present study to calculate the geometries, binding energies, vibrational frequencies, orbital energies, reduced overlap population (ROP), and charges. From these results adsorption properties of ${\alpha}$-state and ${\beta}$-state were deduced. The calculated binding energies are in good agreement with the experimental result. On the W (110), the calculated average binding energies are 2.56 eV for the end-on configuration and 3.20 eV for the lying-down configuration. Calculated vibrational frequency is 1927 $cm^{-1}$ at a 1-fold site and 1161 $cm^{-1}$ at a long-bridge (2) site. These results are in reasonable agreement with experimental values. On the W(100) surface, calculated average binding energies of the end-on and the lying-down are 2.54 eV and 4.02 eV respectively. The differences for binding energy and configuration on the surfaces are explained on the basis of surface-atom coordination and atom-atom spacing. In the favored lyingdown CO configuration on the W(110) and W(100) surfaces, 4 ${\sigma}$ and 1 ${\pi}$ donation interactions, coupled with the familiar 5 ${\sigma}$ donation to the surfaces and back-donations to the CO 2 ${\pi}^{\ast}$ orbital, are responsible for adsorption to the surface.

Adsorption and Desorption of CO on W(110) Surfaces

  • Yang, Taek-seung;Jee, Hae-geun;Boo, Jin-Hyo;Han, Hyun-Seok;Lee, Gyung-Hee;Kim, Young-Dok;Lee, Soon-Bo
    • Bulletin of the Korean Chemical Society
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    • 제29권6호
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    • pp.1115-1120
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    • 2008
  • The adsorption of CO on W(110) surfaces was studied using thermal desorption spectroscopy (TDS), and core and valence level spectroscopy. At 120 K, CO forms a tilted structure at lower coverages ($\alpha$ 1), whereas it adsorbs normal to the surface at higher coverages ($\alpha$ 2). Tilted structures have been suggested to be precursors of dissociative chemisorption; however, experimental evidence is provided for the non-dissociative chemisorption of CO at temperatures above 900 K (which is referred to as the $\beta$ -state): TDS shows first order desorption kinetics. The core and valence level spectra of O/W(110) and those of $\beta$ -CO/W(110) are different. Most importantly, the 4$\sigma$ molecular orbital of CO can be identified in the valence level spectra of the $\beta$ -CO.

O/W(110) 표면의 p($2{\times}1$) 구조의 임계지수 연구 (Exponent Study of the p($2{\times}1$) Phase on an O/W(110) Surface)

  • 백두현;정석민;정진욱
    • 한국진공학회지
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    • 제1권1호
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    • pp.88-95
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    • 1992
  • 고분해능 저에너지 전자회절법(HRLEED)을 이용하여 O/W(110) 표면의 산소흡착층 의 정돈된 p(2 $\times$ 1) 구조가 보이는 2차원 연속적인 상전이계에관한 임계지수 연구를 보고 한다. 이 구조의 (1/2 0) 초격자 회절점의 세기 및 모양을 온도에 대한 함수로 구하여 Tc=708.765K에서 감수율 및 요동상관거리가 차수법칙(power law)에 따르는 발산을 보이는 것이 관측되었다. 이로부터 구한 임계지수는 $\beta$=0.19$\pm$0.05, $\Upsilon=1.48pm$0.34, v=1.23$\pm$0.27 그 리고 η=0.38$\pm$0.12이다. 이들 비보편성을 갖는 임계지수들은 이 계를 지배하는 입방이방성 (cubic anisotropy)를 갖는 2차원 XY 모델로 이해된다.

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110dB, 3-mW 4차 단일비트 시그마 델타 모듈레이터 (A 110dB, 3-mW Fourth-order ${\Sigma}-{\Delta}$ Modulator for high accuracy measure systems)

  • 김태윤;박원기;민경원;최종찬;이성철
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.609-610
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    • 2008
  • In this paper, a 110 dB, 1.024 MHz fourth-order single-loop Delta-Sigma sigma modulator has been presented with an over-sampling ratio of 128 and an overload factor of -6 dB for a bandwidth of 4 kHz. In particular, this ${\Sigma}-{\Delta}$ modulator is well suited for high accuracy measure systems. The whole modulator consumes only 3-mW from a single 3.3V supply in a $0.35-{\mu}m$ CMOS technology.

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