• 한국컴퓨터산업학회논문지
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• 제4권10호
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• pp.611-620
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• 2003

본 논문에서는 상정사고를 감안한 개선된 GUI기반의 전력계통의 조류해석 도구를 제시하였다. 제시한 툴은 전력계통의 조류계산의 교수 및 학습을 돕는 효과적인 도구이다. 이 소프트웨어는 Asymetrix사의 ToolBookII로 개발하였으며 명칭을 PFGUI(Power Flow GUI)로 정하였다. PFGUI는 입력매개변수와 그 결과간의 관계성을 테이블 형태가 아닌 시각적인 그림으로 보여 주기 때문에 전력계통운용및 제어의 연구에 더욱 친화적이다 PFGUI는 선로탈락시의 조류계산 출력을 계통구성도상에 같이 나타내도록 하였다. 사용자들은 계동도강에서 조류계산의 시스템 데이터를 입력하고 손쉽게 모선의 전압과 전력, 선로조류에 대한 결과도를 확인 할 수 있다. 또한 선로전압조정기, 콘덴서, 부하레벨, 선로탈락 등의 다양한 형태의 영향을 파악할 수 있다. 제안된 PFGUI는 Ward-Hale 6-Bus 계통을 연구대상으로 하였다.

• 한국정보통신학회논문지
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• 제8권5호
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• pp.1120-1128
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• 2004

본 논문에서는 우수한 OIP3(ouput intercept point) 특성을 가지는 평형전력증폭단을 설계하고 이를 적용하여 K-band 상향변환기를 설계 및 제작하였다. 상향변환기의 구성은 전력 증폭기단, 국부발진신호 제거필터, 주파수혼합기및 IF단으로 구성하였으며 RF 경로의 동작 유무를 판단하기 위한 국부 루프 경로와 출력 전력을 감시하기 위한 감시 단자로 구성하여 소요되는 전력을 예측하였다. K-대역 MMIC를 이용하여 평형전력증폭단을 제작하였으며 전력 예측값에 의하여 상향변환기를 설계 제작하였다. 설계된 상향변환기의 이득은 $40\pm$2dB, PldB는 29dBm의 특성을 가지며, OIP3는 37.25dBm의 높은 특성이 나타내었다. 특히 전력증폭단의 MMIC를 조정하여 30dB이상의 이득을 제어하였다. 본 논문에서 제작한 상향변환기는 PTP 및 PTMP용 트랜시버에 사용할 수 있으며, QAM 및 QPSK 변조방식을 이용하는 디지털 통신 시스템 및 BWA(Broad Wireless System)에도 적용할 수 있다.

• 대한전자공학회논문지SD
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• 제47권12호
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• pp.31-38
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• 2010

본 논문에서는 QVGA급 LCD Driver IC(LDI)의 그래픽 메모리를 설계한다. 저면적을 위해 pseudo-SRAM 구조로 설계하고, 센싱 특성 개선과 line-read 동작 시 구동력 향상을 위해 bit line을 분할한 cell array 구조를 적용한다. 또한, C-gate를 이용한 저면적의 충돌방지 회로를 사용하여 그래픽 메모리의 line-read/self-refresh 동작과 기존의 write/read 동작 상호간의 충돌을 효과적으로 제어하는 방식을 제안한다. QVGA급 LDI의 그래픽 메모리는 $0.18{\mu}m$ CMOS공정을 이용하여 트랜지스터 레벨로 설계하고 회로 시뮬레이션을 통해 그래픽 메모리의 write, read, line-read, self-refresh 등의 기본 동작을 확인하고, 제안된 충돌방지 블록에 대한 동작을 확인하였다. 개선된 cell array를 통해 bit/bitb line 전압차 ${\Delta}V$는 약 15% 증가하고, bit/bitb line의 charge sharing time $T_{CHGSH}$는 약 30% 감소하여 센싱 특성이 향상되었으며, line-read 동작 시 발생하는 전류는 약 40% 크게 감소되었다.

• 대한전자공학회논문지SD
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• 제47권12호
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• pp.1-7
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• 2010

본 논문은 멀티레벨을 갖는 PoRAM 셀의 데이터를 센싱하는 기법에 관하여 제안하였다. PoRAM은 유기물질을 사용한 단위 셀의 상,하단 전극에 전압을 가했을 때 나타나는 저항 상태의 변화로 셀 데이터를 구분하는 메모리 소자이다. 특히 한 셀당 최대 4 레벨의 안정된 저항 값을 가지므로 멀티레벨 셀로 활용이 가능하다. 따라서 멀티레벨의 센싱을 위해 어드레스 디코딩 방법, 센스 앰플리파이어, 이를 위한 제어 신호 등을 새롭게 제안하였다. 센스 앰플리파이어는 셀에 흐르는 전류를 입력 값으로 받아 설정된 기준 전류($I_{REF}$)와 비교하는 전류 비교기를 기본으로 구성되며 전류를 증폭하기 위해 낮은 입력 임피던스를 갖도록 설계되었다. 제안된 기법에 의해 설계된 회로는 $0.13{\mu}m$ CMOS 공정 라이브러리를 사용하여 설계되었고, 이를 사용함으로써 단위 셀에 흐르는 서로 다른 4 가지 전류 값이 각각 데이터 "00", "01", "10", "11"으로 정확히 센싱 되는 것을 검증하였다.

• 농업과학연구
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• 제43권2호
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• pp.194-204
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• 2016

The pear psylla, Cacopsylla pyricola, is a very small sap-feeding insect of many commercial pear varieties that could be considered the most serious insect pest of pear. Detailed information on plant penetration activities of the pear psylla is essential to study its feeding behavior used to evaluate resistant traits to chemical control. The application of the electrical penetration graph technique (EPG) could provide a relevant insight into the nature of this resistance. EPG waveforms of C. pyricola were characterized on the basis of amplitude, frequency, voltage level, and electrical origin. Feeding behaviors of C. pyricola were recorded and analyzed by EPG analysis. During EPG monitoring, waveform PA occurred at the start of stylet penetration of pear leaf epidermal cell. Waveform PB followed, in which stylet secreted saliva was observed. Waveforms PC1 and PC2 involved penetrating and sucking behaviors in parenchyma cells and vascular parenchyma, respectively. In addition, waveform PC1 represented salivation into bundle sheath cells and ingestion from parenchyma. Otherwise, behaviors of salivation into phloem and ingestion from phloem produced waveforms PE1 and PE2, respectively. On the other hand, ingestion from xylem tissues showed waveform PG. Among the feeding patterns of C. pyricola described above, phloem feeding patterns occurred most frequently, followed by xylem feeding and parenchyma penetration patterns in descending order.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.432.2-432.2
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• 2014

Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.

• 열처리공학회지
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• 제31권1호
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• pp.6-11
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• 2018

The anodic oxidation behavior of Si-containing aluminum alloy for diecasting was investigated. Especially, the property changes during anodization both on aluminum 1050 and 9 weight percentage silicon containing aluminum (Al-9Si) alloys were analyzed by the static current test. In order to fabricate a uniform anodic oxidation film by effect of Al-Si compound, nitric acid containing hydrofluoric acid had been used as a desmutter for aluminum alloy after alkaline etching. It was found that the level of voltage of Al-9Si alloy during the static current test was almost as double as higher than aluminum 1050 through anodization. By adding hydrofluoric acid in the nitric acid electrolyte, the silicon compound on the surface was removed, and the optimum amount of added hydrofluoric acid could be derived. It was also observed that the size of silicon compound formed on the surface could be refined by heat treatment at $500^{\circ}C$ and followed water quenching.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.523-523
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• 2012

As the wafer geometric requirements continuously complicated and minutes in tens of nanometers, the expectation of real-time add-on sensors for in-situ plasma process monitoring is rapidly increasing. Various industry applications, utilizing plasma impedance monitor (PIM) and optical emission spectroscopy (OES), on etch end point detection, etch chemistry investigation, health monitoring, fault detection and classification, and advanced process control are good examples. However, process monitoring in semiconductor manufacturing industry requires non-invasiveness. The hypothesis behind the optical monitoring of plasma induced ion current is for the monitoring of plasma induced charging damage in non-invasive optical way. In plasma dielectric via etching, the bombardment of reactive ions on exposed conductor patterns may induce electrical current. Induced electrical charge can further flow down to device level, and accumulated charges in the consecutive plasma processes during back-end metallization can create plasma induced charging damage to shift the threshold voltage of device. As a preliminary research for the hypothesis, we performed two phases experiment to measure the plasma induced current in etch environmental condition. We fabricated electrical test circuits to convert induced current to flickering frequency of LED output, and the flickering frequency was measured by high speed optical plasma monitoring system (OPMS) in 10 kHz. Current-frequency calibration was done in offline by applying stepwise current increase while LED flickering was measured. Once the performance of the test circuits was evaluated, a metal pad for collecting ion bombardment during plasma etch condition was placed inside etch chamber, and the LED output frequency was measured in real-time. It was successful to acquire high speed optical emission data acquisition in 10 kHz. Offline measurement with the test circuitry was satisfactory, and we are continuously investigating the potential of real-time in-situ plasma induce current measurement via OPMS.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.196-196
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbled appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. Based on the graphene's high carrier mobility, high frequency graphene field effect transistors have been developed. Graphene is useful for photonic components as well as for the applications in electronic devices. Graphene's unique optical properties allowed us to develop ultra wide-bandwidth optical modulator, photo-detector, and broadband polarizer. Graphene can support SPP-like surface wave because it is considered as a two-dimensional metal-like systems. The SPPs are associated with the coupling between collective oscillation of free electrons in the metal and electromagnetic waves. The charged free carriers in the graphene contribute to support the surface waves at the graphene-dielectric interface by coupling to the electromagnetic wave. In addition, graphene can control the surface waves because its charge carrier density is tunable by means of a chemical doping method, varying the Fermi level by applying gate bias voltage, and/or applying magnetic field. As an extended application of graphene in photonics, we investigated the characteristics of the graphene-based plasmonic waveguide for optical signal transmission. The graphene strips embedded in a dielectric are served as a high-frequency optical signal guiding medium. The TM polarization wave is transmitted 6 mm-long graphene waveguide with the averaged extinction ratio of 19 dB at the telecom wavelength of $1.31{\mu}m$. 2.5 Gbps data transmission was successfully accomplished with the graphene waveguide. Based on these experimental results, we concluded that the graphene-based plasmonic waveguide can be exploited further for development of next-generation integrated photonic circuits on a chip.

• Journal of Magnetics
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• 제21권2호
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• pp.266-272
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• 2016

Transcranial magnetic stimulation devices has been used mainly for diagnostic purposes by measuring the functions of the nervous system rather than for treatment purposes, and has a problem of considerable energy fluctuations per repeated pulse. The majority of strokes are caused by ischemia and result in brain tissue damage, leading to problems of the central nervous system including hemiparesis, dysfunction of language and consciousness, and dysfunction of perception. Control is difficult and the size is large due to the difficulty of digitalizing the energy stored in a capacitor, and there are many heavy devices. In addition, there are many constraints when it is used for a range of purposes such as head and neck diagnosis, treatment and rehabilitation of nerve palsy, muscle strengthening, treatment of urinary incontinence etc. Output stabilization and minimization of the energy variation rate are required as the level of the transcranial magnetic stimulation device is dramatically improved and the demand for therapeutic purposes increases. This study developed a compact, low cost transcranial magnetic stimulation device with minimal energy variation of a high repeated pulse and output stabilization using a real time capacitor charge discharge voltage. Ischemia was induced in male SD rats by closing off the common carotid artery for 5 minutes, after which the blood was re-perfused. In the cerebrum, the number of PARP reactive cells after 24 hours significantly decreased (p < 0.05) in the TMS group compared to the GI group. As a result, TMS showed the greatest effect on necrosis-related PARP immuno-reactive cells 24 hours after ischemia, indicating necrosis inhibition, blocking of neural cell death, and protection of neural cells.