• Title/Summary/Keyword: Voltage variation

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Low Power ADC Design for Mixed Signal Convolutional Neural Network Accelerator (혼성신호 컨볼루션 뉴럴 네트워크 가속기를 위한 저전력 ADC설계)

  • Lee, Jung Yeon;Asghar, Malik Summair;Arslan, Saad;Kim, HyungWon
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.25 no.11
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    • pp.1627-1634
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    • 2021
  • This paper introduces a low-power compact ADC circuit for analog Convolutional filter for low-power neural network accelerator SOC. While convolutional neural network accelerators can speed up the learning and inference process, they have drawback of consuming excessive power and occupying large chip area due to large number of multiply-and-accumulate operators when implemented in complex digital circuits. To overcome these drawbacks, we implemented an analog convolutional filter that consists of an analog multiply-and-accumulate arithmetic circuit along with an ADC. This paper is focused on the design optimization of a low-power 8bit SAR ADC for the analog convolutional filter accelerator We demonstrate how to minimize the capacitor-array DAC, an important component of SAR ADC, which is three times smaller than the conventional circuit. The proposed ADC has been fabricated in CMOS 65nm process. It achieves an overall size of 1355.7㎛2, power consumption of 2.6㎼ at a frequency of 100MHz, SNDR of 44.19 dB, and ENOB of 7.04bit.

A 1.1V 12b 100MS/s 0.43㎟ ADC based on a low-voltage gain-boosting amplifier in a 45nm CMOS technology (45nm CMOS 공정기술에 최적화된 저전압용 이득-부스팅 증폭기 기반의 1.1V 12b 100MS/s 0.43㎟ ADC)

  • An, Tai-Ji;Park, Jun-Sang;Roh, Ji-Hyun;Lee, Mun-Kyo;Nah, Sun-Phil;Lee, Seung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.7
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    • pp.122-130
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    • 2013
  • This work proposes a 12b 100MS/s 45nm CMOS four-step pipeline ADC for high-speed digital communication systems requiring high resolution, low power, and small size. The input SHA employs a gate-bootstrapping circuit to sample wide-band input signals with an accuracy of 12 bits or more. The input SHA and MDACs adopt two-stage op-amps with a gain-boosting technique to achieve the required DC gain and high signal swing range. In addition, cascode and Miller frequency-compensation techniques are selectively used for wide bandwidth and stable signal settling. The cascode current mirror minimizes current mismatch by channel length modulation and supply variation. The finger width of current mirrors and amplifiers is laid out in the same size to reduce device mismatch. The proposed supply- and temperature-insensitive current and voltage references are implemented on chip with optional off-chip reference voltages for various system applications. The prototype ADC in a 45nm CMOS demonstrates the measured DNL and INL within 0.88LSB and 1.46LSB, respectively. The ADC shows a maximum SNDR of 61.0dB and a maximum SFDR of 74.9dB at 100MS/s, respectively. The ADC with an active die area of $0.43mm^2$ consumes 29.8mW at 100MS/s and a 1.1V supply.

Evaluation of Virtual Grid Software (VGS) Image Quality for Variation of kVp and mAs (관전압과 관전류량 변화에 대한 가상 그리드 소프트웨어(VGS) 화질평가)

  • Chang-gi Kong
    • Journal of the Korean Society of Radiology
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    • v.17 no.5
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    • pp.725-733
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    • 2023
  • The purpose of this study is to evaluate the effectiveness of virtual grid software (VGS). The purpose of this study is to evaluate the changes in energy and object thickness by dividing the use of VGS into two cases (Without-VGS) without using a movable grid. We attempted to determine the effectiveness of VGS by acquiring images using a chest phantom and a thigh phantom and analyzing SNR and CNR. In the chest phantom and femoral phantom, the tube flow was fixed at 2.5 mAs, and the tube voltage was changed by 10 kVp from 60 to 100 kVp to measure SNR and CNR, and SNR was about 1.09 to 8.86% higher in the chest phantom than in Without-VGS, and CNR was 4.18 to 14.56% higher in the VGS than in Without-VGS. And in the femoral phantom, SNR was about 9.78 to 18.05% higher in VGS than in Without-VGS, and CNR was 21.07 to 44.44% higher in VGS than in Without-VGS. The tube voltage was fixed at 70 kVp in the chest phantom and the femoral phantom, and the amount of tube current was changed at 2.5 to 16 mAs, respectively, and after X-ray irradiation, SNR and CNR were measured in the chest phantom, which was about 1.49 to 11.11% higher in VGS than in Without-VGS, and CNR was 4.76 to 13.40% higher in VGS than in Without-VGS. And in the femoral phantom, SNR was about 2.22 to 17.38% higher in VGS than in Without-VGS, and CNR was 13.85 to 40.46% higher in VGS than in Without-VGS. Therefore, if an inspection is required with a mobile X-ray imaging device, it is believed that good image quality can be obtained by using VGS in an environment where it is difficult to use a mobile grid, and it is believed that the use of mobile X-ray devices can be increased.

A Fully Digital Automatic Gain Control System with Wide Dynamic Range Power Detectors for DVB-S2 Application (넓은 동적 영역의 파워 검출기를 이용한 DVB-S2용 디지털 자동 이득 제어 시스템)

  • Pu, Young-Gun;Park, Joon-Sung;Hur, Jeong;Lee, Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.9
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    • pp.58-67
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    • 2009
  • This paper presents a fully digital gain control system with a new high bandwidth and wide dynamic range power detector for DVB-S2 application. Because the peak-to-average power ratio (PAPR) of DVB-S2 system is so high and the settling time requirement is so stringent, the conventional closed-loop analog gain control scheme cannot be used. The digital gain control is necessary for the robust gain control and the direct digital interface with the baseband modem. Also, it has several advantages over the analog gain control in terms of the settling time and insensitivity to the process, voltage and temperature variation. In order to have a wide gain range with fine step resolution, a new AGC system is proposed. The system is composed of high-bandwidth digital VGAs, wide dynamic range power detectors with RMS detector, low power SAR type ADC, and a digital gain controller. To reduce the power consumption and chip area, only one SAR type ADC is used, and its input is time-interleaved based on four power detectors. Simulation and measurement results show that the new AGC system converges with gain error less than 0.25 dB to the desired level within $10{\mu}s$. It is implemented in a $0.18{\mu}m$ CMOS process. The measurement results of the proposed IF AGC system exhibit 80-dB gain range with 0.25-dB resolution, 8 nV/$\sqrt{Hz}$ input referred noise, and 5-dBm $IIP_3$ at 60-mW power consumption. The power detector shows the 35dB dynamic range for 100 MHz input.

Characterization of SEI layer for Surface Modified Cathode of Lithium Secondary Battery Depending on Electrolyte Additives (전해질 첨가제에 따른 graphite 음극의 SEI분석 및 전기 화학적 특성 고찰)

  • Lee, Sung Jin;Cha, Eun Hee;Lim, Soo A
    • Journal of the Korean Electrochemical Society
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    • v.19 no.3
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    • pp.69-79
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    • 2016
  • Lithium ion battery with high energy density is expanding its application area to electric automobile and electricity storage field beyond existing portable electric devices. Such expansion of an application field is demanding higher characteristic and stable long life characteristic of an anode material, the natural graphite that became commercialized in lithium ion battery. This thesis produced cathode by using natural graphite anode material, analyzed creation of the cathode SEI film created due to initial reaction by using electrolyte additives, VC (vinylene carbonate), VEC (vinyl ethylene carbonate), and FEC (fluoroethylene carbonate), and considered correlation with the accompanying electrochemical transformation. This study compared and analyzed the SEI film variation of natural graphite cathode according to the electrolyte additive with SEI that is formed at the time of initial filling and cathode of $60^{\circ}C$ life characteristic. At the time of initial filling, the profile showed changes due to the SEI formation, and SEI was formed in No-Additive in approximately 0.9 V through EVS, but for VC, VEC, and FEC, the formation reaction was created above 1 V. In $60^{\circ}C$ lifespan characteristic evaluation, the initial efficiency was highest in No-Additive and showed high contents percentage, but when cycle was progressed, the capacity maintenance rate decreased more than VC and FEC as the capacity and efficiency at the time of filling decreased, and VEC showed lowest performance in efficiency and capacity maintenance rate. Changes of SEI could not be verified through SEM, but it was identified that as the cycle of SEI ingredients was progressed through FT-IR, ingredients of Alkyl carbonate ($RCO_2Li$) affiliation of the $2850-2900cm^{-1}$ was maintained more solidly and the resistance increased as cycle was progressed through EIS, and specially, it was identified that the resistance due to No-Additive and SEI of VEC became very significant. Continuous loss of additives was verified through GC-MS, and the loss of additives from partial decomposition and remodeling of SEI formed the non-uniform surface of SEI and is judged to be the increase of resistance.

Diagnosis of Seed Quality for Korean White Pine by Soft X-Ray Photographs (연(軟) X-선(線) 사진(寫眞)에 의(依)한 잣나무 종자(種子)의 품질진단(品質診斷))

  • Min, Kyung Hyun
    • Journal of Korean Society of Forest Science
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    • v.23 no.1
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    • pp.1-8
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    • 1974
  • The seed quality testing for Korean white pine (Pinus koraiensis), their pre-germination and embryo growing process were investigated and the abnormal embryo groups were discriminated by the use of soft X-ray photograph. The study results were as follows ; 1. The embryo reflection was clearly observed for air dried seeds (moisture content was 6.3%) at 30 sec, stratificated seeds at 60 sec (moisture content 24.0-36.0%) and immature seed (moisture content 41.0-64.0%) at 90sec., then the photographing variation for soft X-ray was the radiographing distance at 42cm focus M, voltage 19.5 K.V.P. and Ampere 8 mA. By the above result, the radiographing time for discriminating the embryo reflection was increased by the increase of moisture content in the seeds. 2. The embryo reflection could be clearly observed from the last ten days of June and the embryo length ratio to endosperm length was growing to 65% at the first ten days of September. By the result obtained the soft X-ray photograph was thought to be effective method for the study of inner morphology of seeds. 3. The clear reflection seeds for embryo and endorsperm were observed to 69.7% and the seeds were practically germinated to 75.2% The difference in number between the discriminated seeds by the soft X-ray photograph and the practically germinated seeds was only 6%. According to this results, the soft X-ray photograph was thought to be a effective methods for the germination diagnosis in the shortest time and with the exactness comparatively. 4. Because of the possibility of clearness for observation of pre-germination process, the soft X-ray photograph could be used for the study on the physiology of seed germination. 5. The frequency of abnormal embryos was observed of total 4.4% and their types and subtypes could be classified into twenty groups. Among these groups, single abnormal embryo type was divided into eight subtypes and observed of 2.0 percent, twin embryo was six subtypes and 1.8 percent, triple embryo was five subtypes and 0.5 percent, and inverse type was 0.12 percent.

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Characteristics of Sn-doped β-Ga2O3 single crystals grown by EFG method (EFG 법으로 성장한 β-Ga2O3 단결정의 Sn 도핑 특성 연구)

  • Tae-Wan Je;Su-Bin Park;Hui-Yeon Jang;Su-Min Choi;Mi-Seon Park;Yeon-Suk Jang;Won-Jae Lee;Yun-Gon Moon;Jin-Ki Kang;Yun-Ji Shin;Si-Yong Bae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.2
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    • pp.83-90
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    • 2023
  • The β-Ga2O3 has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga2O3 has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga2O3 single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga2O3 single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga2O3 were prepared by adding different mole ratios of SnO2 powder to Ga2O3 powder, and β-Ga2O3 single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga2O3 single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga2O3 single crystal according to the Sn doping were extensively investigated.