• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.40-44
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• 2000

Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.10
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• pp.98-104
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• 2013

This paper presents a WBAN UWB receiver circuit for RTLS(real time location system) and wireless data communication. The UWB receiver is designed to OOK modulation for energy detection. The UWB receiver is designed for sub-sampling techniques using 4bit ADC and DLL.The proposed UWB receiver is designed in $0.18{\mu}m$ CMOS and consumes 61mA with a 1.8V supply voltage. The UWB receiver achieves a sensitivity of -85.7 dBm, a RF front-end gain of 42.1 dB, a noise figure of 3.88 dB and maximum sensing range of 4 meter.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.243-249
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• 1999

A magnetic field sensor is fabricated with superconducting ceramics of Y-Ba-Cu-O system. The prepared material shows the superconductivity at about 95K. The sensor at liquid nitrogen temperature shows the increase in electrical resistance by applying magnetic field. Actually, the voltage drop across the sensor is changed from zero to a value. more than $100{\mu}V$ by the applied magnetic field. The change in electrical resistance depends on magnetic field. The sensitivity of this sensor is 2.9 ohm/T. The sensing limit is about $1.5{\times}10^{-5}T(=1.5{\times}10^{-1}G)$. The increase in electrical resistance by the magnetic field is ascribed to a modification of the Josephson junctions due to the penetrating magnetic flux into the superconducting material.

• Special Issue of the Society of Naval Architects of Korea
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• 2013.12a
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• pp.73-80
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• 2013

From broad point of view, seam tracking has been one of main issues with respect to welding automation. Several attempts have been successful for seam tracking of fixed weaving width. As a solution of the seam tracking methods for varying groove width, the visual sensors such as CCD cameras have been adopted. Although the vision sensing techniques can achieve high accuracy, the weak point is that well-prepared vision sensor environment should be required to obtain high-quality visual measurements which can be easily affected by significant noises in industrial areas. This paper proposed an alternative seam tracking algorithm for narrow groove. A special measurement device for arc voltage, in this study, is developed to enhance the reliability of the measured welding signals. Based on the developed arc sensor algorithm, an automatic weld-width tracking algorithm is also proposed, which is able to predict the weld-position more accurately. The usefulness of the automatic weld-width tracking algorithm was well verified by applying it to gas tungsten arc welding (GTAW).

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.50-57
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• 2001

Magnetic inductive probe was designed and assembled for sensing the residual stress developed in the ferromagnetic thin sheet. The residual stress measurement system with this probe could resolve the residual stresses developed in the sheet in terms of principal stress orientation, and magnitude of the principal stress. It was consumed that the obtained probe output voltage from the qualified ferromagnetic Fe-42Ni lead frame sheet and quality-rejected sheet is effectively determined using the developed device. The lead frame sheet which has accumulated a high level of residual stress always showed a distinctive stress distribution and magnitude compared with those of qualified lead frame sheet. Those differences were well resolved as functions of input current or used frequency.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.571-574
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• 2008

In this paper, we propose $256{\times}256$ pixel array fingerprint sensor with an advanced circuits for detecting. The pixel level simple detection circuit converts from a small and variable sensing current to binary voltage out effectively. We minimizes an electrostatic discharge(ESD) influence by applying an effective isolation structure. The sensor circuit blocks were designed and simulated in standard CMOS $0.35{\mu}m$ process. Full custom layout is performed in the unit sensor pixel and auto placement and routing is performed in the full chip.

• The Transactions of the Korean Institute of Power Electronics
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• v.15 no.5
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• pp.387-393
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• 2010

This paper proposes a correction method of capacitance estimation considering the temperature effect for the DC-link capacitor banks in three-phase AC/DC/AC PWM converters. At first, operating temperature of the capacitors is detected and capacitance variation is corrected due to the temperature effect. Thermisters are used for sensing the temperature and voltage variation across the thermister is exploited to identify the capacitance change. The validity of the proposed method has been verified by experimental results.

• Journal of Sensor Science and Technology
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• v.21 no.5
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• pp.359-366
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• 2012

Nanopore DNA sequencing is an emerging and promising technique that can potentially realize the goal of a low-cost and high-throughput method for analyzing human genome. Especially, solid-state nanopores have relatively high mechanical stability, simple surface modification, and facile fabrication process without the need for labeling or amplification of PCR (polymerized chain reaction) in DNA sequencing. For these advantages of solid-sate nanopores, the use of solid-state nanopores has been extensively considered for developing a next generation DNA sequencing technology. Solid-state nanopore sequencing technique can determine and count charged molecules such as single-stranded DNA, double-stranded DNA, or RNA when they are driven to pass through a membrane nanopore between two electrolytes of cis-trans chambers with applied bias voltage by measuring the ionic current which varies due to the existence of the charged particles in the nanopore. Recently, many researchers have suggested that nanopore-based sensors can be competitive with other third-generation DNA sequencing technologies, and may be able to rapidly and reliably sequence the human genome for under $1,000.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.48 no.4
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• pp.303-310
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• 2020

This paper describes a Power Monitoring Unit (PMU) for Unmanned Aerial Vehicle (UAV) electrical system, It is designed for the PMU which performs data sensing of generator, transformer rectifier unit (TRU), battery and gear box installed in UAV and operate power ON/OFF devices of mission equipment. The PMU measures the voltage and current for the aircraft power source (generators, transformer rectifier unit and battery), measures the pressure and temperature of the gearbox, and performs the mission equipment power command received from the mission computer. The PMU was designed to meet the requirements of the UAV, and was performed through structure/thermal analysis, environmental test, EMI test and ground/flight tests.

• Transactions of the Korean hydrogen and new energy society
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• v.15 no.4
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• pp.317-323
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• 2004

We fabricated a MISFET using Pd/NiCr gate for the detecting of hydrogen gas in the air and investigated its electrical characteristics. To improve stability and high concenntration sensitivity and remove the blister generated by the penetration of hydrogen atoms Pd/NiCr catalyst gate metal are used as dual gate. To reduce the gate drift voltage caused by the inflow of hydrogen, the gate insulators of sensing and reference FFET were constructed with double insulation layers of silicon dioxide and silicon nitride. The hydrogen response of MISFET were amplified with the difference of gate voltages of both MISFET. To minimize the drift and the noise, we used a OP177 operational amplifier. The sensitivity of the Pd/NiCr gate MISFET was lower than that of Pd/Pt gate MISFET, but it showed good stability and ability to detect high concentration hydrogen up to 1000ppm.