• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.918-922
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• 2006

Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.113-119
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• 2000

In this work, Pd/Pt gate MISFET sensor using Pd membrane was fabricated to detect the hydrogen in DI water. A differential pair-type was used to minimize the intrinsic voltage drift of the MISFET. To avoid hydrogen induced drift of the sensor, the silicon dioxide/silicon nitride double layer was used as the gate insulator of the FET's. In order to eliminate the blister formation on the surface of the hydrogen sensing gate metal, Pd/Pt double metal layer was deposited on the gate insulator. For this type of application sensors need to be isolated from the DI water, and a Pd membrane was used to separate the sensor from the DI water. The output voltage change due to the variation of hydrogen concentration is linear from 100ppm to 500 ppm.

• Journal of Sensor Science and Technology
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• v.4 no.4
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• pp.16-22
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• 1995

Catalytic combustion type gas sensor was fabricated by using ${\gamma}-Al_{2}O_{3}$, Pd catalyst and some binders for metane and propane detection. Using the gas sensor, digital gas meter was manufactured and tested for sensing performance. The fabricated sensor had power consumption of 700mW with applied voltage of dc 2V and the output voltage of the sensor was about 700mV for propane of 1,000ppm and 500mV for methane of 1,000ppm. In 10 cycle injection of the gases of 2,400ppm, The digital meter showed good sensitivity, linearity, and reproductivity with precision of ${\pm}25ppm({\pm}1%)$.

• Fire Science and Engineering
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• v.29 no.3
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• pp.43-47
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• 2015

Water mist was sprayed on small compartment areas filled with smoke that formed from two different combustibles. The water-mist injection pressure and time were varied, and changes in the light extinction coefficient were measured over time. The smoke removal effect was analyzed with a light sensing smoke meter in different experimental conditions. Using the meter, the changes in smoke density were converted to changes in DC voltage over time to obtain the changes in the light extinction coefficient. The water mist was more effective in eliminating the smoke formed from glowing compared to flaming combustion. The smoke removal effect was significantly better with greater injection pressure and injection time.

• Journal of Power Electronics
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• v.3 no.2
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• pp.99-114
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• 2003

This paper presents a feasible development on a highly accurate quick response adjustable speed drive implementation fur general purpose induction motor which operates on the basis of sensorless slip frequency type vector controlled sine-wave PWM inverter with an automatic tuning machine parameter estimation schemes. In the first place, the sensorless vector control theory on the three-phase voltage source-fed inverter induction motor drive system is developed in slip frequency based vector control principle. In particular, the essential procedure and considerations to measure and estimate the exact stator and rotor circuit parameters of general purpose induction motor are discussed under its operating conditions. The speed regulation characteristics of induction motor operated by the three-phase voltage-fed type current controlled PWM inverter using IGBT's is illustrated and evaluated fur machine parameter variations under the actual conditions of low frequency and high frequency operations for the load torque. In the second place, the variable speed induction motor drive system, employing sensorless vector control scheme which is based on three -phase high frequency carrier PWM inverter with automatic toning estimation schemes of the temperature -dependent and -independent machine circuit parameters, is practically implemented using DSP-based controller. Finally, the dynamic speed response performances for largely changed load torque disturbances as well as steady state speed vs. torque characteristics of this induction motor control implementation are illustrated and discussed from an experimental point of view.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.34-41
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• 1999

In this paper, hot carrier induced performance degradation of peripheral circuits in memory devices such as static type imput buffer, latch type imput buffer and sense amplifier circuit has been measured and analyzed. The used design and fabrication of the peripheral circuits were $0.8 {\mu}m$ standard CMOS process. The analysis method is to find out which device is most significantly degraded in test circuits by using spice simulation, and then to characterize the correlation between device and circuit performance degradation. From the result of the performance degradation of static type input buffer, the trip point was increased due to the transconductance degradation of NMOS. In the case of latch type input buffer, there was a time delay due to the transconductance degradation of NMOS device. Finally, hot carrier induced the decrease of half-Vcc voltage and the increased of sensing voltage in sense amplifier circuits have been measured.

• Journal of Power Electronics
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• v.17 no.5
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• pp.1298-1307
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• 2017

The constant on-time current-mode controlled (COT-CMC) switching dc-dc converter is stable, with no subharmonic oscillation in its current loop when a voltage ripple in its outer voltage loop is ignored. However, when its output capacitance is small or its feedback gain is high, subharmonic oscillation may occur in a COT-CMC buck converter with a proportional-integral (PI) compensator. To investigate the subharmonic instability of COT-CMC buck converters with a PI compensator, an accurate reduced-order asynchronous-switching map model of a COT-CMC buck converter with a PI compensator is established. Based on this, the instability behaviors caused by output capacitance and feedback gain are investigated. Furthermore, an approximate instability condition is obtained and design-oriented stability boundaries in different circuit parameter spaces are yielded. The analysis results show that the instability of COT-CMC buck converters with a PI compensator is mainly affected by the output capacitance, output capacitor equivalent series resistance (ESR), feedback gain, current-sensing gain and constant on-time. The study results of this paper are helpful for the circuit parameter design of COT-CMC switching dc-dc converters. Experimental results are provided to verify the analysis results.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.6
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• pp.297-301
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• 2006

In the present work, we investigate the characteristics of new composition material, chalcogenide $Ge_1Se_1Te_2$ material in order to overcome the problems of conventional PRAM devices. The Tc of $Ge_1Se_1Te_2$ bulk was measured $231.503^{\circ}C$ with DSC analysis. For static DC test mode, at low voltage, two different resistances are observed. depending on the crystalline state of the phase-change resistor. In the first sweep, the as-deposited amorphous $Ge_1Se_1Te_2$ showed very high resistance. However when it reached the threshold voltage(about 11.8 V), the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The phase transition between the low conductive amorphous state and the high conductive crystal]me state was caused by the set and reset pulses respectively which fed through electrical signal. Set pulse has 4.3 V. 200 ns. then sample resistance is $80\sim100{\Omega}$. Reset pulse has 8.6 V 80 ns, then the sample resistance is $50{\sim}100K{\Omega}$. For such high resistance ratio of $R_{reset}/R_{set}$, we can expect high sensing margin reading the recorded data. We have confirmed that phase change properties of $Ge_1Se_1Te_2$ materials are closely related with the structure through the experiment of self-heating layers.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.1
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• pp.153-162
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• 2018

The importance of energy harvesting technique is increasing due to the elevated level of demand for sustainable power sources for wearable device applications. In this study, we developed an Energy Harvesting wearable Platform(EH-P) architecture which is used in the design of a multi-energy source based on TENG. The proposed switching circuit produces power with higher current at lower voltage from energy harvesting sources with lower current at higher voltage. This can powers microcontrollers for a short period of time by using PV and TENG complementarily placed under hard conditions for the sources such as indoors. As a result, the whole interface circuit is completely self-powered with this makes it possible to run of sensing on a Wearable device platform. It was possible to increase the wearable device life time by supplying more than 29% of the power consumption to wearable devices. The results presented in this paper show the potential of multi-energy harvesting platform for use in wearable harvesting applications, provide a means of choosing the energy harvesting source.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.1
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• pp.48-58
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• 1998

For the purpose of designing novel capacitance pressure sensor, several effects on sensitivity such as parasitic capacitance effects, temperature/thermal drift and leakage current have to be eleiminated. This paper proposed the experimental studies on frequency compensation method by electronic circuit technique, C-V converting method with switched capacitor and C-F converting method with schmitt trigger circuit. The third interface circuit by frequency compensation method is composed to eliminate the drift and leakage component by comparision sensing frequency with reference frequency. The signal transmission is realized by digital signal to minimize the influence of noise and high resolution is obtained by means of increasing the number of digital bits. In the fabricated high performance C-V interface, the offset voltage was not appeared, and in case of voltage source, 4.0V, feed back capacitance, 10㎊, the pressure, 0~10 ㎪, the sensitivity of C-V converter is 28 ㎷/㎪.V, the temperature drift characteristic, 0.051 %F.S./$^{\circ}C$ and C-F converter shows -6.6 Hz/pa, 0.078 %F.S./$^{\circ}C$ respectively, relatively good ones.