• 제목/요약/키워드: Voltage sans

검색결과 4건 처리시간 0.022초

Study on the Microstructure of Trivalent Chrome Layers b AFM and SANS

  • Choi, Y.;Lee, J.J.;Lee, B.K.;Kim, M.;Kwon, S.C.;Seung, B.S.
    • 한국표면공학회:학술대회논문집
    • /
    • 한국표면공학회 2003년도 춘계학술발표회 초록집
    • /
    • pp.61-61
    • /
    • 2003
  • It is important to know SIze distribution of defects In electroplated trivalent chrome layers because it significantly influences on performance of the layers. Most of the nano-scale defects are able to be introduced by hydrogen evolution during the plating. Little information is available on the nano-size defects. In this study, SANS was applied to determine the size distribution of nano-scale defects in the trivalent chrome layers prepared in a formate bath. The defect size and distribution was dependent upon plating conditions such as current density and applied voltage. SANS is one of useful techniques to determine the nano-scale defect in the electroplated layers.

  • PDF

3가 크롬 박막 내의 극미세 결함 측정을 위한 중성자 소각 산란법의 적용 (Application of Small Angle Neutron Scattering to Determine Nano-size Cracks in Trivlent Chromium Layers)

  • 최용
    • 한국표면공학회지
    • /
    • 제37권3호
    • /
    • pp.175-178
    • /
    • 2004
  • The size and number of nano-size defects of thin trivalent chrome layers were determined by small angle neutron scattering (SANS) without breaking the thin chrome layers. Most of defect size of the trivalent chromium prepared in this test conditions is in the range of about 40nm. The number of nano-size defects less than about 40nm of the trivalent chromium layer increases with plating voltage at constant current density From this study, SANS is proved as one of useful techniques to evaluate nano-size defects of thin film layer.

연속적인 순간전압강하에 의한 저압 부하의 정량적 영향 평가 (Quantitative Evaluation of the Impact of Low-Voltage Loads Due to the Successive Voltage Sags)

  • 문종필;김재철;윤상윤;강봉석
    • 대한전기학회논문지:전력기술부문A
    • /
    • 제53권12호
    • /
    • pp.678-684
    • /
    • 2004
  • Automatic reclosing is a typical protection method in power distribution systems for clearing the temporary faults. However, it has a fatal weakness in regards to voltage sags because it produces successive voltage sags. In this paper, we explored successive impact of voltage sag due to the automatic reclosing of power distribution systems. The actual tests of low voltage loads were accomplished for obtaining the susceptibility of voltage sags. The final results of the test yielded power acceptability curves of voltage sag, and the curves were transformed the 3-dimensional CBEMA(Computer Business Equipment Manufacturer Association) format. For the quantitative evaluation of the impact of successive voltage sags, an assessment formulation using the voltage sag contour was proposed. The proposed formulation was tested by using the voltage sag contour data of IEEE standard and the results of the test. Through the case studies, we verified that the proposed method can be effectively used to evaluate the actual impact of successive voltage sans.

배전선로 고장에 의한 Voltage Sag의 특성 해석 (Characteristic Analysis of Voltage Sags Due to Faulted Distribution Lines)

  • 김성덕
    • 조명전기설비학회논문지
    • /
    • 제16권1호
    • /
    • pp.76-84
    • /
    • 2002
  • 송전선과 배전선의 고장에 의한 voltage sag는 산업 수용가와 전력회사에 당면한 가장 중요한 전력품질(power quality) 문제들 중 하나가 되었다. voltage sag는 일반적으로 진폭과 지속시간 특성으로 기술되지만 voltage sag 현상을 규명하여 그 대책을 찾는데는 위상변위 특성을 반드시 고려해야 한다. 이 논문에서는 3상지락, 단선지락, 및 선간단락 사고가 발생하였을 경우에, 고장임피던스의 변화에 의한 voltage sag를 symmetrical components 해석을 이용하여 특성해석을 하였다. 이 때, voltage sag와 이들이 진폭과 위상에 미치는 효과를 고찰하였다. 3상지락과 같은 평형 고장은 모든 상에서 전압과 전류가 동일한 값으로 변화되고 또한 영상성분들은 영이 되었다. 그렇지만, 단선지락과 선간단락 고장과 같은 불평형 고장으로 인한 voltage sag는 진폭과 위상이 각 상마다 다르게 변화되었다. 해석결과를 확인하기 위하여 전력회로 모델들을 토대로 시뮬레이션을 수행하고 그 결과들도 검토되었다.