• Title/Summary/Keyword: Voltage reduction

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Harmonic Reduction Scheme By the Advanced Auxiliary Voltage Supply (개선된 보조전원장치에 의한 고조파 저감대책)

  • Yoon, Doo-O;Yoon, Kyoung-Kuk;Kim, Sung-Hwan
    • Journal of the Korean Society of Marine Environment & Safety
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    • v.21 no.6
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    • pp.759-769
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    • 2015
  • Diode rectifiers are very popular in industry. However, they include large low-order harmonics in the input current and do not satisfy harmonic current content restrictions. To reduce the harmonics to the power system, several methods have been introduced. It is heavy and expensive solution to use passive filters as the solution for high power application. Another solution for the harmonic filter is utilization of active filter, but it is too expensive solution. Diode rectifiers with configurations using switching device have been introduced, but they are very complicated. The combined 12-pulse diode rectifier with the square auxiliary voltage supply has been introduced. It has the advantages that auxiliary circuit is simple and inexpensive compared to other strategies. The advanced auxiliary voltage supply in this thesis is presented as a new solution. When the square auxiliary voltage supply applied, the improvement of THD is 6~60[%] in whole load range. But when the advanced auxiliary voltage supply applied, it shows stable and excellent reduction effect of THD as 57~71[%]. Especially, for the case with 10[%] load factor, reduction effect of THD has little effect as 6[%] in the case of inserting a square auxiliary voltage supply. But when the proposed new solution applied, reduction effect has excellent effect as 71[%]. Theoretical analysis of the combined 12-pulse diode rectifier with the advanced auxiliary voltage supply is presented and control methods of the auxiliary supply is proposed. The reduction in the input current harmonics is verified by simulation using software PSIM.

Measurement of a Threshold Initiation Carrier Density for a Reduction in Gas Breakdown Voltage

  • Park, Hyunho;Kim, Youngmin
    • Journal of Electrical Engineering and Technology
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    • v.13 no.6
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    • pp.2421-2424
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    • 2018
  • A direct measurement of an initiation carrier injection for a low voltage discharge is presented. A self-sustained pulsed discharge is utilized to characterize electrical responses of a glow discharge for varying amounts of injected initiation carriers. It is clearly demonstrated that the initiation carrier injection affects the ignition time and the breakdown voltage of the primary discharge. An abrupt reduction in the breakdown voltage for a $300{\mu}m$ gap pin-plate discharge is observed when a threshold carrier density of $3{\times}10^{11}cm^{-3}$ is injected and the breakdown voltage continues to decrease to 250 V with increasing the initiation carrier injection beyond the threshold density.

Transmission Characteristics & Analysis of Ignition Voltage According to Its Conductor Length from the Ballast to the HID Lamp (HID램프와 안정기 사이의 전선 길이에 따른 이그니션 전압 전달특성 분석)

  • Bang, Sun-Bae;Kim, Chong-Min;Han, Woon-Ki;Im, Byeong-No;Jang, Mog-Soon
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.56 no.3
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    • pp.148-154
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    • 2007
  • In this paper, characteristics of ignition voltage and current by wire length of HID(High Intensity Discharge) lamp circuit are analyzed. In the construction field, decision of the wire thickness for HID lamp circuit has the problems, and these are presented. Through transmit parameters, equivalent model of the ballast and HID lamp circuit was derived. The graph of voltage reduction about length between the ballast and the lamp is shown. The simulation of proposed model and experimental results are presented in order to validate the proposed method. The proposed model and graph can use to choose the proper length of wire between the ballast and the lamp in the field.

Data Supply Voltage Reduction Scheme for Low-Power AMOLED Displays

  • Nam, Hyoungsik;Jeong, Hoon
    • ETRI Journal
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    • v.34 no.5
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    • pp.727-733
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    • 2012
  • This paper demonstrates a new driving scheme that allows reducing the supply voltage of data drivers for low-power active matrix organic light-emitting diode (AMOLED) displays. The proposed technique drives down the data voltage range by 50%, which subsequently diminishes in the peak power consumption of data drivers at the full white pattern by 75%. Because the gate voltage of a driving thin film transistor covers the same range as a conventional driving scheme by means of a level-shifting scheme, the low-data supply scheme achieves the equivalent dynamic range of OLED currents. The average power consumption of data drivers is reduced by 60% over 24 test images, and power consumption is kept below 25%.

A Switching Technique for Common Mode Voltage Reduction of PWM-Inverter System using the DSP320F240 (DSP320F240을 이용한 PWM-Inverter구동 시스템에서의 전도노이즈 저감을 위한 스위칭 기법)

  • Park Hyun Seok;Park Kyu Hyun;Kim Lee Hun;Han Sung Yong;Won Chung Yuen;Kim Young Real
    • Proceedings of the KIPE Conference
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    • 2002.07a
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    • pp.355-359
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    • 2002
  • Much attention has been given to EMI effects created in variable speed ac drive system. Zero switching states of inverter control invoke large common mode voltage. This paper focuses on the switching techniques to mitigate common mode voltage. This paper proposes a common-mode voltage reduction method based on sinusoidal pulse width modulation in three phase PWM inverter system. By using three carriers wave displaced by 120 degrees, it is possible to eliminate a common mode voltage pulse In one control period. Simulation and experimental results show that common mode voltages In the proposed technique are reduced more than conventional technique.

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Reduction of Operating Voltage of GaN-based Blue-violet Laser Diode by using Highly Mg Doped GaN Layer (고농도의 Mg가 도핑된 GaN층을 이용한 GaN계 청자색 레이저다이오드의 동작 전압 감소)

  • 곽준섭
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.7
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    • pp.764-769
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    • 2004
  • In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

A Compensator for Lateral Current Reduction Applied to Autonomously Controlled UPSs Connected in Parallel

  • Sato Kazuhide Kazuhide;Kawamura Atsuo
    • Journal of Power Electronics
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    • v.5 no.4
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    • pp.312-318
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    • 2005
  • This paper presents a compensator for reduction of the reactive lateral current in multiple autonomously controlled uninterruptible power supplies (UPS) connected in parallel. This compensator acts directly on the control equation for voltage amplitude and it provides an improved current distribution especially in the case of parallel connection of UPSs with different output power ratings. Observations show that the original control equation for output voltage amplitude is efficient for voltage regulation but it causes great variation of voltage levels. A compensator with the same structure is added to counterbalance the variation caused by the original control equation. Simulations show promising results with the employment of the proposed compensator. Our simulations are confirmed by experimental results using three UPSs with different output ratings and voltage limiters ($1\%$) connected in parallel under various conditions.

A Feedforward Compensation Method for 120Hz Output Voltage Ripple Reduction of LLC Resonant Converter (LLC 공진 컨버터의 120Hz 출력전압 리플 저감을 위한 전향보상 방법)

  • Yoon, Jong-Tae;Lee, Kui-Jun
    • The Transactions of the Korean Institute of Power Electronics
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    • v.26 no.1
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    • pp.46-52
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    • 2021
  • This study proposes a feedforward compensation control method to reduce 120 Hz output voltage ripple in a single-phase AC/DC rectifier system composed of PFC and LLC resonant converters. The proposed method compensates for the voltage ripple of the DC-link by using the AC input and DC output power difference, and then reduces the final output voltage ripple component of 120 Hz through feedforward compensation based on the linearized frequency gain curve of the LLC resonant converter. Through simulation and experimental results, the validity of the ripple reduction performance was verified by comparing the conventional PI controller and the proposed feedforward compensation method.

Characterizations of Pt-SPE Electrocatalysts Prepared by an Impregnation-Reduction Method for Water Electrolysis (함침-환원법으로 제조된 수전해용 Pt-SPE 전극촉매의 특성)

  • Jang, Doo-Young;Jang, In-Young;Kweon, Oh-Hwan;Kim, Kyoung-Eon;Hwang, Gab-Jin;Kang, An-Soo
    • Transactions of the Korean hydrogen and new energy society
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    • v.17 no.4
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    • pp.440-447
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    • 2006
  • Solid polymer electrolyte(SPE) membrane with electrodes embedded on both faces offer unique possibilities for the electrochemical cells like water electrolyzer with fuel cell. The Nafion 117 membrane was used as the SPE, and $Pt(NH_3)_4Cl_2$ and $NaBH_4$ as the electrocatalysts and reducing agent, respectively. The 'impregnation-reduction(I-R) method' has been investigated as a tool for the preparation of electrocatalysts for water electrolyzer by varying the concentration of reducing agent and reduction time at fixed concentration of platinum salt, 5 mmol/L. Pt-SPE electrocatalysts prepared by non-equilibrium I-R method showed the lowest cell voltage of 2.17 V at reduction time, 90 min and with concentration of reducing agent 0.8 mol/L and the cell voltage with those by equilibrium I-R method was 2.42 V at reduction time, 60 min and with concentration of reducing agent 0.8 mol/L. The cell voltage were obtained at a current density $1\;A/cm^2$ and $80^{\circ}C$. In water electrolysis, hydrogen production efficiency by Pt-SPE electrocatalyst is 68.2% in case of non-equilibrium I-R method and 61.2% at equilibrium I-R method.

Impacts of Process and Design Parameters on the Electrical Characteristics of High-Voltage DMOSFETs (공정 및 설계 변수가 고전압 LDMOSFET의 전기적 특성에 미치는 영향)

  • 박훈수;이영기
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.9
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    • pp.911-915
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    • 2004
  • In this study, the electrical characteristics of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated depending on its process and design parameter. In order to verify the experimental data, two-dimensional device simulation was carried out simultaneously. The off- state breakdown voltages of n-channel LDMOSFETs were increased nearly in proportional to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times{10}^{13}/cm^2$ to $1.0\times{10}^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times. The on-resistance was also increased about 76 %. From 2-D simulation, the increase in the breakdown voltage was attributed to a reduction in the maximum electric field of LDMOS imolanted with low dose as well as to a shift toward n+ drain region. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region. The experimental and design data of these high-voltage LDMOS devices can widely applied to design smart power ICs with low-voltage CMOS control and high-voltage driving circuits on the same chip.