• 전기학회논문지
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• 제58권11호
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• pp.2149-2154
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• 2009

Electric power quality in power transmission/distribution systems has considerably been deteriorated with the increase in the capacity of distributed generators (DGs). It is because inverters, connecting DGs to conventional power grids, tend to generate harmonic current and voltage. For harmonic mitigation, a large amount of research has been done on passive and active filters, which have been operating successfully in many countries. This paper, therefore, presents how to adopt the filters to an inverter-based DG, with considering a system consisting of both inverter-based DG and harmonic filters. In particular, this paper describes the simulation results using the PSCAD/EMTDC: firstly, the relationship between total harmonic distortion(THD) of current and output power of DG: secondly, the harmonic mitigation ability of passive and active filters. The system, furthermore, is obliged to satisfy the regulations made by Korean Electric Power Corporation(KEPCO). In the regulations, power factor should be maintained between 0.9 and 1 in a grid-connected mode. Thus, this paper suggests two methods for the system to control its power factor. First, the inverter of DG should control power factor rather than an active filter because it brings dramatic decrease in the capacity of the active filter. Second, DG should absorb reactive power only in the range of low output power in order to prevent useless capacity increase of the inverter. This method is expected to result in the variable power factor of the system according to its output power.

• Journal of Electrical Engineering and Technology
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• 제11권4호
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• pp.939-942
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• 2016

One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N_d) of the active layer on the J-V curve. When the active layer thickness was varied (for N_d = 8×10¹⁷ cm^-3) from 800 nm to 100 nm, the reverse saturation current density (J_o) changed from 3.56×10^-5 A/cm² to 9.62×10^-11 A/cm² and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N_d = 4×10¹⁵ cm^-3), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J_o = 9.62×10^-11 A/cm²) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

• 한국전기전자재료학회논문지
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• 제24권10호
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• pp.834-838
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• 2011

This research shows the electrical characteristic using excellent epoxy nano-composite of MgO 5.0 wt% and $SiO_2$ 0.4 wt% in mechanical strength test depending on nano-additive. First of all, volume resistance depending on nano-additive and temperature using high resistance meter (HP. 4329A) by increasing 10, 100, 1,000 V of applying voltage was measured. Moreover, temperature range of $25{\sim}120^{\circ}C$ with virgin sample was tested using TO-9B oven by Ando Company. The result showed that virgin and the samples added with MgO and $SiO_2$ had similar value of volume resistance in low temperature and low electric field region and reduced with slow slope. The nano-composite's volume resistance of sample added with MgO and $SiO_2$ had higher value than virgin sample's volume resistance in high temperature region more than $80^{\circ}C$. Moreover, the slope has steeply reduced. The volume resistance of sample added with MgO 5.0 wt% was $8.38{\times}10^{13}\;{\Omega}{\cdot}cm$ and it was 6.8 times more than virgin sample in high temperature at $120^{\circ}C$. The insulation characteristics were constant although filler has changed in low temperature region. But, in high temperature region, the value of volume resistance of sample with MgO 5.0 wt% was 7.6 times more than the virgin sample's volume resistance.

• 대한방사선기술학회지:방사선기술과학
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• 제4권1호
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• pp.55-62
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• 1981

This study was conducted, during the period of 20-30th, July in 1981, to survey measurement methods in thyroid uptake rate test in Seoul city. The results were summarized as follows: 1. For the great part of nuclear medcine department, a mount of radioiodine($^{131}I$) administrated to the patients was $50-100{\mu}Ci$ in thyroid uptake rate test. 2. Distribution of scintillation, counter with crystal size of $1\frac{1}{2}inch$ was 43%, 3inch(22%), 2.5inch(14%) and $2\frac{1}{2}inch$ was 7% in RAI uptake rate test. 3. When RAI uptake rate test was performed, distribution of collimator in use was flat field type collimator(78%) in general and cylindrical type collimator was 22%. 4. High voltage applied to the P-M tube was $900{\sim}1000V$(50%) and most units provided $3{\sim}15%$ of the window range for the $^{131}I$ peak $\gamma-ray$ energy. 5. Distribution on the use of neck phantom for measurements standard solution was 57% and distribution of b filter in use for room background counts and extrathyroidal tissue was 43% and 50%. 6. The distance between the counter and the source was 25cm(58%) in measuring radioactivity of standard solution, thyroid tissue and background radioactivity count. 7. The early uptake measurements(2, 4, 6 hours) are done after administration of the radioiodine dose and also 24-hour and 48-hour uptake measurements are done in routine test.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.98-98
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• 2010

Ion beam irradiation has been extensively used for surface modification of polymers, glassy metals and amorphous and crystalline materials at micron and submicron scales. The surface structures created by exposure to an ion beam range from dots, steps and one-dimensional straight wrinkles to highly complex hierarchical undulations and ripples. In general, the morphology of these nanoscale features can be selected by controlling the ion beam parameters (e.g. fluence and acceleration voltage), making ion beam irradiation a promising method for the surface engineering of materials. In the work, we presented that ion beam irradiation results in creation of a peculiar nanoscale dimple-like structure on the surface of polyimide - a common polymer in electronics, large scale structures, automobile industry, and biomedical applications. The role of broad Ar ion beam on the morphology of the structural features was investigated and insights into the mechanisms of formation of these nanoscale features were provided. Moreover, a systematic experimental study was performed to quantify the role of ion beam treatment time, and thus the morphology, on the coefficient of friction of polyimide surfaces covered by nanostructure using a tribo-experiment. Nano-indentation experiment were performed on the ion beam treated surfaces which shows that the hardness as well as the elastic modulus of the polyimide surface increased with increase of Ar ion beam treatment time. The increased of hardness of polyimide have been explained in terms of surface structure as well as morphology changes induced by Ar ion beam treatment.

• Applied Science and Convergence Technology
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• 제25권5호
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• pp.88-91
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• 2016

The $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO systems at temperature of $1250^{\circ}C$ for 4 hours was successful synthesized. In this study, PbO-doped $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$ systems with non-linear behaviors showed ordering-degree dependence at the low temperature range were prepared using the columbite precursor method. And the characteristic of remnant polarization vs. electric field were analyzed. The pyroelectric, dielectric and piezoelectric properties of partially disordered $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO solid solutions were studied as a function of temperature, frequency, and electric field. It showed distinct features of temperature dependent of pyroelectric coefficient, spontaneous polarization and dielectric constant at about $50^{\circ}C$. The figure of merit was calculated as pyroelectric coefficient, dielectric constant and dissipation factor. It was found that the high voltage responsivity FV, high detectivity FD were $0.0373m^2/C$ and $0.6735{\times}10^{-4}Pa{-1/2}$, respectively, in the $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+3.0 wt%PbO system.

• Journal of Welding and Joining
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• 제31권6호
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• pp.50-57
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• 2013

Characterization of microstructures and cryogenic mechanical properties of electro beam (EB) welds between cast and forged Inconel 718 superalloys has been investigated. Optimal EBW condition was found in the beam current range of 36~39 mA with the constant travel speed of 12 mm/s and arc voltage of 120 kV for 10 mm-thick specimens. Electron beam current lower than 25 mA caused to occur the liquation microfissuring in cast-side heat affected zone (HAZ) of EB welds. The HAZ liquation microfissure was found on the liquated grain boundaries with resolidified ${\gamma}/Laves$ and ${\gamma}/NbC$ eutectic constituents. EBW produced welds showing a fine dendritic structure with relatively discrete Laves phase due to fast cooling rate. After post weld aging treatment, blocky Laves phase and formation of ${\gamma}^{\prime}+{\gamma}^{{\prime}{\prime}}$ strengtheners were observed. Presence of primary strengthener and coarse Laves particles in PWHT weld may cause to reduce micro-plastic zone ahead of a crack, leading to a significant decrease in Charpy impact toughness at $-196^{\circ}C$. Fracture initiation and propagation induced by Charpy impact testing were discussed in terms of the dislocation structures ahead of crack arisen from the fractured Laves phase.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.166-166
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• 2010

Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• 한국광학회지
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• 제17권5호
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• pp.430-436
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• 2006

1550nm 파장대역에서 편광에 관계없이 동작하는 $Ti:LiNbO_3\;2{\times}2$ 삽입/분기 광 멀티플렉서를 구현하였다. 소자는 두 개의 입 출력 광도파로, 두 개의 편광모드분리기, 두 개의 편광모드 변환기 그리고 전기광학효과로 파장을 가변시킬 수 있는 전극으로 구성되었다. TE, TM 편광에 대해서 단일모드 특성을 갖는 채널 광도파로는 x-cut $LiNbO_3$에 Ti 확산 방법으로 제작하였으며, 채널 광도파로 위에 배열된 $SiO_2$ 패드의 전단 스트레인을 이용하여 위상정합 편광모드변환기를 구현하였다. 한편 전기광학효과를 이용하여 파장을 가변시키기 위해서 전압을 인가하여 광도파로의 복 굴절률을 변화시켰다. 0.094nm/V 파장가변률과 최대 17nm 파장을 가변시켰으며, 8.2dB 부 모드레벨과 3.72nm FWHM을 측정하였다.

• 한국의류산업학회지
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• 제23권4호
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• pp.527-535
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• 2021

In this study, electroconductive textiles were developed by screen-printing technology using a complex solution of PEDOT:PSS/AgNW on a polylactic acid nanofiber web. A performance evaluation was then conducted to utilize this electroconductive textile as a signal transmission line. To obtain highly conductive electroconductive textiles, this study sought to determine the optimal mixing ratio of PEDOT:PSS/AgNW. Sheet resistance was measured to evaluate the electrical properties of electroconductive textiles, Finite element-scanning electron microscopy images were then used to examine surface properties, and Fourier transform-infrared analysis was performed to evaluate chemical properties. The signal waveform characteristics of the electroconductive textile were observed using a signal generator and an oscilloscope. Radio-frequency characteristics were then evaluated to confirm frequency range, and bending tests were conducted to evaluate durability. The signal transmission lines produced in this study had a sheet resistance value of 3.30 ?/sq, and signal transmission performance was evaluated to observe that the input value of the voltage was nearly identical to the output value. In addition, S21 analysis confirmed that it was available in the frequency domain up to 35 MHz. The performances of the transmission lines were maintained after 100, 200, 500, and 1,000 repeated bending tests, and sufficient durability was confirmed.