• Title/Summary/Keyword: Voltage deviation

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A Study on the Representation of Voltage Unbalance: Part II-Approximations of Voltage Unbalance Factor (전압불평형의 표현방식에 관한 연구(II) - 전압불평형계수의 근사적 표현방식 -)

  • 정승기
    • The Transactions of the Korean Institute of Electrical Engineers A
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    • v.52 no.5
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    • pp.263-270
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    • 2003
  • In field applications, to represent the degree of voltage unbalance, the maximum voltage deviation from the average is preferred to the voltage unbalance factor based on symmetrical component analysis. This paper first clarifies the relationship between the voltage unbalance factor and the maximum deviation factor showing that the maximum deviation factor approximates the voltage unbalance factor under relatively low unbalanced conditions. Several alternative ways of approximation are introduced and examined by comparing with the conventional maximum deviation factor. It appears that these alternatives provide more accurate approximation to the voltage unbalance factor over wider range of voltage unbalance while maintaining simplicity in their formula.

A Study on How to Minimize the Luminance Deviation of AC-LED Lighting (교류 LED 조명의 빛 밝기 편차를 최소화하는 방법에 대한 연구)

  • Dong Won Lee;Bong Hee Lee;Byungcheul Kim
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.3
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    • pp.255-260
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    • 2023
  • In order to spread LED lighting, LED lighting technology directly driven by alternating current (AC) commercial power has recently been introduced. Since current does not flow at a voltage lower than the threshold voltage of the LED, a non-conductive section occurs in the current waveform, and the higher the threshold voltage of the LED, the more discontinuous current waveforms are generated. In this paper, multi-LED modules are connected in series so that the threshold voltage can be adjusted according to the number of LED modules. A small number of LED modules are driven at a low instantaneous rectified voltage, and a large number of LED modules are driven at a high instantaneous rectified voltage to lengthen the overall lighting time of AC-LED lighting, thereby minimizing the luminance deviation of AC-LED lighting. In addition, the load current flowing through the LED module is adjusted to be the same as the design current even at the maximum rectified voltage higher than the design voltage, so that the light brightness of the LED module is kept constant. Therefore, even if the rectified voltage applied to the LED module changes, the AC-LED lighting in which the light brightness is constant and the luminance deviation is minimal has been realized.

Transient Performance Improvement in the Boundary Control of Boost Converters using Synthetic Optimized Trajectory

  • Feng, Gaohui;Yuan, Liqiang;Zhao, Zhengming;Ge, Junjie;Ye, Xiuxi;Lu, Ting
    • Journal of Power Electronics
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    • v.16 no.2
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    • pp.584-597
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    • 2016
  • This paper focuses on an improvement in the transient performance of Boost converters when the load changes abruptly. This is achieved on the basis of the nature trajectory in Boost converters. Three key aspects of the transient performance are analyzed including the storage energy change law in the inductors and capacitors of converters during the transient process, the ideal minimum voltage deviation in the transient process, and the minimum voltage deviation control trajectory. The changing relationship curve between the voltage deviation and the recovery time is depicted through analysis and simulations when the load suddenly increases. In addition, the relationship curve between the current fluctuation and the recovery time is obtained when the load suddenly decreases. Considering the aspects of an increasing and decreasing load, this paper proposes the transient performance synthetic optimized trajectory and control laws. Through simulation and experimental results, the transient performances are compared with the other typical three control methods, and the ability of proposed synthetic trajectory and control law to achieve optimal transient performance is verified.

Tradeoff between the Output Voltage Deviation and Recovery Time of Boost Converters

  • Ge, Junjie;Yuan, Liqiang;Zhao, Zhengming;Lu, Ting;He, Fanbo;Feng, Gaohui
    • Journal of Power Electronics
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    • v.15 no.2
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    • pp.338-345
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    • 2015
  • The time-optimal control for boost converters can achieve the minimum recovery time. However, their output voltage deviation is quite large. Since the minimum output voltage deviation and minimum recovery time cannot be obtained at the same time, a novel energy control is proposed to achieve a superior tradeoff between them in this paper. The peak value of the inductor current can be decreased as well. Its control parameter is easy to choose. When compared with the conventional control methods, the proposed control shows a better dynamic performance. Experimental results, which are in agreement with the theoretical analysis, are provided to verify the proposed control method.

Comparison of Accuracy and Output Waveform of Devices According to Rectification Method (정류방식에 따른 장치의 정확도와 출력 파형의 비교)

  • Lee, In Ja
    • Journal of radiological science and technology
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    • v.41 no.6
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    • pp.603-610
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    • 2018
  • This study examined the following: accuracy of the exposure conditions in the inverter device and three-phase device; output waveform over the exposure conditions; and average and standard deviation of the output waveform. After assessing whether the dose corresponding to the theoretical dose was presented, the following conclusions were obtained: 1. The accuracy of the tube voltage(kVp) and tube current(mA) exposure time(sec) was within the tolerable level prescribed in Korea's Safety Management Standards. In the error, Inverter device was large the tube voltage and exposure time, the three-phase device was large the tube current. 2. In terms of the output waveform of the exposure conditions and the average and standard deviation of the output waveform, the higher tube voltage and larger tube current resulted in greater standard deviation in pulsation. Moreover, the standard deviation of pulsation was shown to be greater in the inverter device than the three-phase device; there was also greater standard deviation in the inverter device considering the exposure time. 3. Regarding the exposure conditions over the output dose, all linearity showed the coefficient of variation which had an allowable limit of error within 0.05. Although the output dose ratio for the inverter device was 1.00~1.10 times no difference that of the three-phase device, there was almost no difference in dose ratio between the tube currents.

Voltage Feedback AMOLED Display Driving Circuit for Driving TFT Deviation Compensation (구동 TFT 편차 보상을 위한 전압 피드백 AMOLED 디스플레이 구동 회로)

  • Ki Sung Sohn;Yong Soo Cho;Sang Hee Son
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.4
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    • pp.161-165
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    • 2023
  • This paper designed a voltage feedback driving circuit to compensate for the characteristic deviation of the Active Matrix Organic Light Emitting Diode driving Thin Film Transistor. This paper describes a stable and fast circuit by applying charge sharing and polar stabilization methods. A 12-inch Organic Light Emitting Diode with a Double Wide Ultra eXtended Graphics Array resolution creates a screen distortion problem for line parasitism, and charge sharing and polar stabilization structures were applied to solve the problem. By applying Charge Sharing, all data lines are shorted at the same time and quickly positioned as the average voltage to advance the compensated change time of the gate voltage in the next operation period. A buffer circuit and a current pass circuit were added to lower the Amplifier resistance connected to the line as a polar stabilization method. The advantage of suppressing the Ringing of the driving Thin Film Transistor can be obtained by increasing the stability. As a result, a circuit was designed to supply a stable current to the Organic Light Emitting Diode even if the characteristic deviation of the driving Thin Film Transistor occurs.

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A Study on the Out-of-Step Detection Algorithm using Frequency Deviation of the Voltage (전압의 주파수 편의를 이용한 동기탈조 검출 알고리즘에 관한 연구)

  • 소광훈;허정용;김철환
    • The Transactions of the Korean Institute of Electrical Engineers A
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    • v.53 no.3
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    • pp.175-181
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    • 2004
  • The protection against transient instability and consequent out-of-step condition is a major concern for the utility industry. Unstable system may cause serious damage to system elements such as generators and transmission lines. Therefore, out-of-step detection is essential to operate a system safely. The detection of out-of-step is generally based upon the rate of movement of the apparent impedance. However such relay monitors only the apparent impedance which may not be sufficient to correctly detect all forms of out-of-step and cannot cope with out-of-step for a more complex type of instability such as very fast power swing. This paper presents the out-of-step detection algorithm using voltage frequency deviation. The digital filters based on discrete Fourier transforms (DFT) to calculate the frequency of a sinusoid voltage are used, and the generator angle is estimated using the deviation of the calculated frequency component of the voltage. The proposed out-of-step algorithm is based on the assessment of a transient stability using equal area criterion. The proposed out-of-step algorithm is verified and tested by using EMTP MODELS.

The Effect of Microstructure Nonuniformity on the Electrical Characteristics of ZnO Varistors with $Al_2$O$_3$ doping

  • Han, Se-Won;Cho, Han-Goo
    • KIEE International Transactions on Electrophysics and Applications
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    • v.3C no.4
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    • pp.140-145
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    • 2003
  • The influence of microstructure nonuniformity on the electrical characteristics of ZnO varistors was analyzed with the added amount of $Al_2$O$_3$ dopants. $Al_2$O$_3$ doping can effectively inhibit grain growth. When $Al_2$O$_3$ content is in the range between 0-0.1 %, the average grain size and the standard deviation decrease quickly and the grain growth is strongly inhibited. Therefore, it is possible to increase the microstructure uniformity by accurate addition of $Al_2$O$_3$ to the ZnO varistor. The breakdown voltage increases with the decrease of standard deviation. The greater the uniformity of the Zno varistor means the higher the global breakdown voltage. The $Al_2$O$_3$ dopants having about 0-0.023 wt% content can effectively improve the voltage ratio, and the voltage ratio reaches a minimum value of 2.32 at an $Al_2$O$_3$ content of 0.005 wt%.

A temperature sensor with low standard deviation with generating reference voltage for use in IoT applications (IoT 어플리케이션에서 활용하는 참조 전압을 같이 생성할 수 있는 표준 편차가 낮은 온도 센서)

  • Juwon Oh;Younggun Pu;Yeonjae Jung;Kangyoon Lee
    • Transactions on Semiconductor Engineering
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    • v.2 no.2
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    • pp.10-14
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    • 2024
  • This paper presents a circuit design aimed at generating the required reference voltage and temperature sensor voltage in conjunction with an ADC, utilizing the current generated by temperature characteristics of BJT components for sensor data conversion. Additionally, two control methods are introduced to reduce the standard deviation of the circuit, resulting in over a ten-fold decrease in standard deviation. The proposed circuit occupies an area of 0.057mm2 and was implemented using 55nm RF process.

The Analysis of Breakdown Voltage for the Double-gate MOSFET Using the Gaussian Doping Distribution

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.10 no.2
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    • pp.200-204
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    • 2012
  • This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson's equation and the Fulop's avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.