• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• 제11B권3호
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• pp.112-118
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• 2001

In the near future, the voltage of power system for passenger vehicle will be changed to 42V from existing 14V./ Because of increasing power and voltage ratings used in the vehicle the motor drive system has high switching dv/dt and it generates electromagnetic interference (EMI) To solve these problems multi-level inverter system may be used The feature of multi-level inverter is the output voltage to be synthesized from several levels of voltage Because of this feature high switching dv/dt and EMI can be reduced in the multi-level inverter system But as the number of level is increased manufacturing cost is getting expensive and system size is getting large. Because of these disadvantages the application of multi-level inverter has been restricted only to high power drives. The method to reduce manufacturing cost and system size is to integrate circuit of multi-level inverter into a few chips But isolated power supply and signal isolation circuit using transformer or opto-coupler for drive circuit are obstacles to implement the integrated circuit (IC) In this paper a drive circuit of 4-level inverter suitable for integration to hybrid or one chip is proposed In the proposed drive circuit DC link voltage is used directly as the power source of each gate drive circuit NPN transistors and PNP transistors are used to isolate to transfer the control signals. So the proposed drive circuit needs no transformers and opto-couplers for electrical isolation of drive circuit and is constructed only using components to be implemented on a silicon wafer With th e proposed drive circuit 4- level inverter system will be possible to be implemented through integrated circuit technology Using the proposed drive circuit 4- level inverter system is constructed and the validity and characteristics of the proposed drive circuit are proved through the experiments.

• 조명전기설비학회논문지
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• 제25권5호
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• pp.7-14
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• 2011

Currently high power Light Emitting Diode (LED) is in the limelight due to its characteristics of long durability, low maintenance costs, and high efficiency. Furthermore, it does not emit pollutants or poisonous gases and is a light source not using mercury, so it holds a high status in eco-friendly terms as well. In this paper, we studied a two-stage LED power drive circuit that can compensate only voltage regulation through LED output current, in order to improve efficiency of LED drive with constant current control in accordance with changes in temperature. The proposed LED drive has an advantage of reducing LED drive's voltage losses by controlling only voltage change of input power, compared with an existing circuit which controls input voltage. The suggested non-insulation compensating circuit for voltage change was verified to have improved efficiency relative to a LED drive using existing DC/DC converter.

• 대한전자공학회논문지TE
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• 제42권3호
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• pp.7-12
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• 2005

본 논문에서는 전력선 통신 시스템에서 낮은 임피던스에 의한 에러율의 저하를 개선하기 위하여 제안한 D급 증폭 회로를 사용한 구동 회로를 적용하였다. 전력선 모뎀에 사용되는 전압 구동 회로와 전류 구동 회로를 제작하고, 본 논문에서 제안한 D급 증폭 회로를 이용한 구동 회로와 비교하여 실험을 하였다. 실험 결과 본 논문에서 설계한 구동 회로가 다른 구동 회로보다 급격하게 임피던스 변화하는 전력선 채널에 대하여 성능이 우수함을 보였다.

• 대한전자공학회논문지
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• 제25권3호
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• pp.269-275
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• 1988

In this paper, a high efficiency motor drive system which improves the multi-step response of PM step motors by reducing the transition time of the motor drive current, is studied by designing a dual-voltage drive circuit. The designed drive circuit eventually prevents the motor from decreasing drive torque while the stepping rate is increased. The method of designing a dual-voltage drive circuit with the motor specifications is suggested in order to improve the response of step rate and drive efficiency. Also, despite improving the power efficiency on motor driving, the response characterstics suggested by the motor manufacture's specifications are satisfied without any special deficiency.

• 한국군사과학기술학회지
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• 제5권1호
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• pp.45-58
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• 2002

In this paper, we designed the circuit of drive control for towing winch. It is composed of reference voltage circuit for driving voltage reference, low pass filter circuit for noise reduction, dead zone circuit for initial transient input, and driving circuit for drum direction/velocity control. Also it is realized a drive control circuit for towing winch drum in accordance with PWM(pulse width modulation) method to suit it's purpose of a large capacity driving system. The performance of the designed circuit is analyzed by experiments and the appliablity for driving the towing winch drum satisfactorily is evaluated through a various testing.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.1301-1304
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• 2005

본 논문에서는 전력선 통신 시스템에서 급격하게 변화는 임피던스 때문에 발생하는 에러율을 개선하기 위하여 제안한 D급 증폭 구동 회로를 적용하였다. 전력선 모뎀에, 일반적인 구동회로인 전압 구동 회로와 전류 구동 회로를 제작하여 실험을 하였다. 그리고 같은 전력선 모뎀에 본 논문에서 제안한 D급 증폭 회로를 이용한 구동 회로를 사용하여 실험을 하였다. 실험 결과 본 논문에서 설계한 구동 회로가 전력선 통신에서 임피던스 변화에 대하여 다른 구동 회로보다 성능이 우수함을 보였다.

• 대한전기학회논문지
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• 제43권2호
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• pp.244-250
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• 1994

This paper presents the design of a new turn-off gate drive circuit for GTO which can accomplish faster turn-off switching. The major disadvantage of the conventional turn-off gate drive technique is that it has a difficulty in realizing high negative diS1GQT/dt because of VS1RGM(maximum reverse gate voltage) and stray inductances of turn-off gate drive circuit[1~2]. The new trun-off gate drive technique can overcome this problem by adding another turn-off gate drive circuit to the conventional turn-off gate drive circuit. Simulation and experimental results of the new turn-off gate drive circuit in conjunction with chopper circuit verify a faster turn-off switching performance.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2002년도 전력전자학술대회 논문집
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• pp.707-710
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• 2002

A 120kV/70A high voltage switch has been installed at Korea Atomic Energy Research Institute in Taejon to supply power with Korea Superconducting Tokamak Advanced Research (KSTAR) Neutral Beam Injection (NBI) system. NBI system requires fast cutoff of the power supply voltage for protection of the grid when arc detected and fast turn-on the voltage for sustaining the beam current. Therefore the high voltage switch and arc current detection circuit are important part of the NBI power supply and there are much need for high voltage solid state switches in NBI system and a broad area of applications. This switch consisted of 100 series connected MOSFETs and adopted the proposed simple and reliable gate drive circuit without bias supply, Various results taken during the commissioning phase with a 100kW resistive load and NBI source are shown. This paper presents the detailed design of 120kV/70A high voltage MOSFETs switch and simple gate drive circuit. Problems with the high voltage switch and gate driver and solutions are also presented.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2002년도 학술대회논문집
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• pp.281-286
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• 2002

An existent hoist drive system is using each different drive equipment in control of Hoisting, traveling(T/L), traversing(T/S) driving, so there are much energy losses because of excessive weight. Also, power circuits are using relay contact, so working environment are frequent secession accident etc.. by shock on unfavorable condition, and there is danger of safety accident, maintenance has frequent problem and so on. To solve these problem, it is integrated each driving power supply in drive system for hoist control and drive, utility power supply etc.. by single device in this research. The power circuit is consisted of non-contact circuit applying to bidirectional voltage controller circuit using thyristor that is power semiconductor switching device

• 한국시뮬레이션학회논문지
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• 제4권2호
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• pp.41-60
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• 1995

The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among circuit design engineers for motor drive and power converter applications. IGBT devices(International Rectifier, Proposed proposed model etc) have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirememts and high current density capability. When designing circuit and systems that utilize IGBTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The voltage rise rate at turn-off for inductive loads varies significantly for IGBTs with different base life times, and this rate of rise is important in determing the voltage overshoot for a given series resistor-inductor load circuit. Excessive voltage overshoot is potentially destructive, so a snubber protection circuit may be required. The protection circuit requirements are unique for the IGBT and can be examined using the model. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.