• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.84-89
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• 1996

The nucleation and growth of microporosities was observed during the course of annealing treatment of sputter-deposited AgInSbTe thin films. There was a close correlation between the density of microporosity and the sputtering gas pressure in annealed thin films. The void density for a given composition decreased with sputtering gas pressure. It was shown from the present study that the number of porosities decreased while the average porosity size increased as the annealing temperature and holding time increased. The mechanism of porosity formation in the sputter-deposited AgInSbTe thin flus containing Ar-impurity trapped from the Ar-plasma is discussed in the present article.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.163-168
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• 1997

Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).

• Microbiology and Biotechnology Letters
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• v.13 no.3
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• pp.209-212
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• 1985

The cell density and packing characteristics of Escherichia coli immobilized in a dual hollow fiber bioreactor consisting of outer silicone membrane for oxygen transport and three inner isotropic polypropylene hollow fibers for substrate transport were investigated. The cells have grown forming the layer like animal tissue in a nearly 100％ packing density. The dry biomass density was 550g/liter of void volume for cell growth, which was the highest among the biomass densities ever reported.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.7 no.1
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• pp.18-24
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• 1982

The Tree phenomenon of the PMMA resin depends on an annex of the inorganic fillers and water. If the internal of an arganic insulating materials exist the fault of inorganic fillers, Void and Projecting part, the high voltage concentrates in this place. It leaves a trace about the partical breakdown and this phenomenon develops into the degration of insulating material. This paper researchses that have an effect on the tree phenomenon by the inorganic fillers and water. The results is as follow. (1) The growth of tree are less the influence of inorganic fillers. Because , the constant of water are more. (2) If the tree branches contact the inorganic filler, the advance are relaxation.

• International Journal of Internet, Broadcasting and Communication
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• v.16 no.3
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• pp.85-97
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• 2024

In recent years, the Guochao style of virtual idols has proliferated, and the virtual idol market in China has witnessed gradual growth. As Guochao combines traditional Chinese culture with modern aesthetics, it shapes a distinctive visual identity for Chinese virtual idols. We address the current research gap by exploring the characteristics of Guochao style in virtual idol design through literature analysis, semiotics, and comparative studies. We examine how Guochao virtual idols represent the convergence of Chinese culture and modern technology, reflecting cultural characteristics of the era. Through our analysis of virtual idol design, we identify key design features of Guochao virtual idols, bridging a theoretical void in this area. We propose recommendations to foster a more dynamic and culturally enriched virtual idol industry in China. Our research provides new insights into integrating Guochao elements into virtual idol design as an approach to differentiate amid competition while promoting traditional Chinese culture through digital media. We demonstrate how this design approach enhances the uniqueness and cultural value of Chinese virtual idols, contributing to the field's theoretical foundation and practical applications.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.961-968
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• 1998

In order to investigate the effects of substrate bias voltage on the formation of$ZnS-SiO_2$ protective film in phase change optical disk by R.F. magnetron sputtering method, thin dielectric film was formed on Si wafer and Corning glass by using ZnS(80mol%)-$SiO_2$(20mol%)t arget under argon gas. In this study, the Taguchi experimental method was applied in order to obtain optimum conditions with reduced number of experiments and to control numerous variables effectively. At the same time this method can assure the reproducibility of experiments. Optimum conditions for film formation obtained by above method were target RF power of 200 W. substrate RF power of 20 W, Ar pressure of 5 mTorr. sputtering time of 20 min.. respectively. The phase of specimen was determined by using XRD and TEM. The compositional analysis of specimen was performed by XPS test. In order to measure the thermal resistivity of deposited specimen, annealing test was carried out at $300^{\circ}C$ and $600^{\circ}C$. For the account of void fraction in thin film, the Bruggeman EMA(Effective Medium Approximation) method was applied using the optical data obtained by Spectroscopic Ellipsometry. According to the results of this work, the existence of strong interaction between bias voltage and sputtering time was confirmed for refractive index value. According to XRD and TEM analysis of specimen, the film structure formed in bias voltage resulted in more refined structures than that formed without bias voltage. But excess bias voltage resulted in grain growth in thin film. It was confirmed that the application of optimum bias voltage increased film density by reduction of void fraction of about 3.7%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.603-609
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• 2022

Passivation quality is mainly governed by epitaxial growth of crystalline silicon wafer surface. Void-rich intrinsic a-Si:H interfacial layer could offer higher resistivity of the c-Si surface and hence a better device efficiency as well. To reduce the resistivity of the contact area, a modification of void-rich intrinsic layer of a-Si:H towards more ordered state with a higher density is adopted by adapting its thickness and reducing its series resistance significantly, but it slightly decreases passivation quality. Higher resistance is not dominated by asymmetric effects like different band offsets for electrons or holes. In this study, multilayer of intrinsic a-Si:H layers were used. The first one with a void-rich was a-Si:H(I₁) and the next one a-SiO_x:H(I₂) were used, where a-SiO_x:H(I₂) had relatively larger band gap of ~2.07 eV than that of a-Si:H (I₁). Using a-SiO_x:H as I₂ layer was expected to increase transparency, which could lead to an easy carrier transport. Also, higher implied voltage than the conventional structure was expected. This means that the a-SiO_x:H could be a promising material for a high-quality passivation of c-Si. In addition, the i-a-SiO_x:H microstructure can help the carrier transportation through tunneling and thermal emission.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.23-32
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• 2003

The spectroe-ellipsometric constant $\Delta$, Ψ and the ellipsometric growth curves at the wavelength of 632.8 nm are collected. These are critically examined to find out the optimum growth condition of phase change $Ge_2Sb_2Te_5(GST)$ thin films as an optical recording medium. GST films are prepared using DC magnetron sputtering technique, under the selected experimental conditions of Ar gas pressure (5 mTorr, 7 mTorr and 10 mTorr), DC power of sputtering gun (15 W, 30 W and 45 W), and substrate temperature (from room temperature to 18$0^{\circ}C$). Based on the three film model, the density distribution of deposited GST films are obtained versus Ar gas pressure and DC power by analyzing spectro-ellipsometric data. The calculated evolution curves at the wavelength of 632.8 nm, are fit into the in situ observed ones to get information about the evolution of density distribution during film growth. The density distribution showed different evolution curves depending on deposition conditions. The GST films fabricated at DC power of 30 W or 45 W, and at Ar gas pressure of 7 mTorr turned out to be the most homogeneous one out of those prepared at room temperature, even though the maximum density difference between the dense region and the dilute region of the GST film was still significant (~50%). Finally, in order to find the optimum growth condition of homogeneous GST thin films, the substrate temperature is varied while Ar gas pressure is fixed at 7 mTorr and DC power at 30 W and 45 W respectively. A monotonic decrease of void fraction except for a slight increase at 18$0^{\circ}C$ is observed as the substrate temperature increases. Decrease of void fraction indicates an increase of film density and hence an improvement of film homogeneity. The optimum condition of the most homogeneous GST film growth turned out to be 7 mTorr of Ar gas pressure, 15$0^{\circ}C$ of substrate temperature. and 45 W of DC power. The microscopic images obtained using scanning electron microscope, of the samples prepared at the optimum growth condition, confirmed this conclusion. It is believed that the fabrication of homogeneous GST films will be quite beneficial to provide a reliable optical recording medium compatible with repeated write/erase cycles.

• Membrane Journal
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• v.17 no.3
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• pp.254-268
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• 2007

Sodium type faujasite(FAU) zeolite layers with diverse materials characteristics(Si/Al ratio, thickness, and structural discontinuity) were hydrothermally grown on a porous $\alpha-Al_2O_3$ tube, and then the $CO_2/N_2$ separation was evaluated at $30^{\circ}C$ for an equimolar mixture of $CO_2$ and $N_2$. Among hydrothermal conditions, $SiO_2$ content in hydrothermal solution seriously affected materials characteristics: with an increment in the $SiO_2$ content, Si/Al ratio, thickness, and structural discontinuity of grown FAU zeolite layer simultaneously increased. The present study reveals that structural discontinuity(intercrystalline voids due to an incomplete densification and cracks induced by GIS Na-P1 phase) is the most important variable affecting the $CO_2/N_2$ separation. Also, it was suggested that the $CO_2$ desorption in permeate side be the rate-determining(slowest) step in the overall $CO_2$ permeation.

• Journal of Ocean Engineering and Technology
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• v.3 no.2
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• pp.125-137
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• 1989

To check technical improvement in the soundness and strength of 12% Cr steel rotor, a 25 tons of rotor with 65 tons of ingot was made in real size and was cut to pieces to take test samples, and the various mechanical tests such as impact, tensile, creep, and fatigue were carried out. The strengths are compared with those of 1% Cr-Mo-V rotor of same size. Microstructures of the samples are examined and reviewed. The results can be summarized as follows. 1) Fracture appearance transition temperatures are 80.deg. C at the center part and 60.deg. C near surface of 12% Cr rotor, and 8.deg. C near surface of 1% Cr-Mo-V rotor. 2) Comparative rapid softening occurs at higher temperatures above 600.deg. C for 12% Cr steel and 550.deg. C for 1% Cr-Mo-V steel in tension tests. 3) Fatigue crack propagation rate of 12% Cr steel is almost same as that of 1% Cr-Mo-V steel at the same corresponding surface part of the rotors. The crack growth rate of center part of 12% Cr rotor is faster than near surface part of the rotor, and the crack growth rate at the load condition of R=0.04 is slower than that of the load condition of R=0.5 for both 12% Cr steel and 1% Cr-Mo-V steel. 4) Crack growth rate of radial direction near surface of 12% Cr rotor is faster than that of transverse direction at the same part because of the difference in residual stresses. 5) Both creep and fatigue strengths of 12% Cr steel are superior to those of 1% Cr-Mo-V steel and the difference is thought the effect of climb and glide controlled creep by solid solution of alloying elements and dispersion of carbides.