• Applied Chemistry for Engineering
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• v.17 no.5
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• pp.471-475
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• 2006

$VO_x$ thin films with the thickness of 450 nm were prepared on a $Pt/Ti/SiO_{2}/Si$ substrate at room temperature by a reactive radio frequency (rf) magnetron sputtering method. The deposition rates of $VO_x$ thin films were investigated as a function of $O_{2}$ concentration and rf power. As the $O_{2}$ concentration in a $O_{2}/Ar$ mixture increased, the deposition rate decreased. However, the deposition rate increased with increasing rf power. The deposited $VO_x$ thin films were annealed at $450^{\circ}C$ for 2, 4, and 6 h in $O_{2}$ and $N_{2}$ ambient. After annealing, the phase changes of $VO_x$ thin films were investigated using X-ray diffraction analysis. The plane and cross-sectional views of $VO_x$ thin films before and after annealing were observed by field emission scanning electron microscopy. The metal-insulator transition (MIT) properties of $VO_x$ thin films were measured using current-voltage measurement. The excellent MIT properties were observed in $VO_x$ thin films annealed in $O_{2}$ ambient.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.80-85
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• 2019

Vanadium dioxide is a well-known metal-insulator phase transition material. Lots of researches of vanadium redox flow batteries have been researched as large scale energy storage system. In this study, vanadium oxide($VO_x$) thin films were applied to cathode for lithium ion battery. The $VO_x$ thin films were deposited on Si substrate($SiO_2$ layer of 300 nm thickness was formed on Si wafer via thermal oxidation process), quartz substrate by RF magnetron sputter system for 60 minutes at $500^{\circ}C$ with different RF powers. The surface morphology of as-deposited $VO_x$ thin films was characterized by field-emission scanning electron microscopy. The crystallographic property was confirmed by Raman spectroscopy. The optical properties were characterized by UV-visible spectrophotometer. The coin cell lithium-ion battery of CR2032 was fabricated with cathode material of $VO_x$ thin films on Cu foil. Electrochemical property of the coin cell was investigated by electrochemical analyzer. As the results, as increased of RF power, grain size of as-deposited $VO_x$ thin films was increased. As-deposited thin films exhibit $VO_2$ phase with RF power of 200 W above. The transmittance of as-deposited $VO_x$ films exhibits different values for different crystalline phase. The cyclic performance of $VO_x$ films exhibits higher values for large surface area and mixed crystalline phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.558-561
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• 2001

Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.558-561
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• 2001

Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.220-223
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• 2005

We studied the effect of composition, processing, and sintering temperature on the microwave properties of $Mg_{3-x}Co_x(VO_4)_2$ system which is applicable to LTCC. When $Mg_{3-x}Co_x(VO_4)_2$ was fabricated by solid-state reaction process and sintered at the temperature range of $800\sim910^{\circ}C$, it was found that the optimum composition of x was 2 at which microwave properties of 910$^{\circ}C$-sintered one were as follows: $Q\times f_0\sim55,200GHz$ and $\varepsilon_r\sim10$. When $(MgCo_2)(VO_4)_2$ was fabricated by sol-gel process and sintered at 800$^{\circ}C$, $Q\timesf_0$was 34,400GHz which is much high compared to those fabricated by solid-state reaction process at the same sintering temperature.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.850-857
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• 1995

VO$_{x}$ and V$_{1-x}$ Sn$_{x}$O$_2$thin films were fabricated on a glass under various $O_2$pressure by reactive e-beam evaporation method. Thermochromism and transition temperatures of these thin films were examined by measuring spectral solar transmittances with spectrophotometer at various temperatures, and their stoichiometries were analyzed by RBS. Oxygen pressure of 5$\times$10$^{-5}$ . Torr was found to be optimum to fabricate near stoichiometric VO$_2$thin film by reactive e-beam evaporation. Rapid thermal annealing(RTA) was adopted to crystallize the thin films and annealing at 40$0^{\circ}C$ ~45$0^{\circ}C$ for 20 ~ 30 seconds was found to be the optimum annealing condition for the crystallization of VO$_2$thin film of 100nm-300nm thickness. 1~6 atomic percent of Sn was doped into VO$_2$thin films to fabricate V$_{1-x}$ Sn$_{x}$O$_2$thin films. These V$_{1-x}$ Sn$_{x}$O$_2$thin films showed distinct thermochromism and significantly higher transition temperatures than VO$_2$thin film.

• Korean Chemical Engineering Research
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• v.58 no.1
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• pp.135-141
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• 2020

Although the graphene is regarded as a promising material for the electrode of the supercapacitor, its electrochemical performance is still less enough to satisfy the current demand raised in real applications. Here, using a home laser engraver, firstly we performed the prompt and selective reduction of the graphene oxide to produce multilayered and highly porous graphene maintaining high electrical conductivity. Subsequently, the resulting graphene was conformally deposited with pseudocapacitive thin VO_x using atomic layer deposition in order to enhance specific capacitance of graphene. We observed that various forms of VO_x exist in the VO_x/graphene hybrid through XPS analysis. The hybrid showed highly improved specific capacitance (~189 F/g) as compared to the graphene without VO_x. We expect that our approach is accepted as one of the alternatives to produce the graphene-based electrode for various energy storage devices.

• Journal of the Korean Chemical Society
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• v.43 no.5
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• pp.547-551
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• 1999

The phase change upon Bi substitutions in $Ca_{1.5-1.5x}Bi_xVO_4$ has been systematically studied. The x value corresponding to the maximum Bi substitutions reades to 0.14 and in this range($x{\leq}0.14$), the single phasic $Ca_3(VO_4)_2$ can be identified. However, a new phase of $BiV_{1.025}O_{4+x}$ is apparently formed along with the $Ca_3(VO_4)_2$ phase, when the x value exceeds beyond 0.18 ($x{\geq}0.18$). As a result of Bi substitution in the range of x$\leq$0.14, the interplanar space($d_300$) becomes larger as the Bi content increases. Since the composition of single phasic $Ca_{1.29}Bi_{0.14}VO_4$ (x=O.14) is, however, incongruent melting one, no definite melting point could be observed. But we found that its solidus temperature was 1182$^{\circ}C$ by DTA analysis.

• Applied Chemistry for Engineering
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• v.27 no.2
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• pp.165-170
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• 2016

In this study, we investigated the cause of the decrease in activities of $VO_x/TiO_2$ SCR catalyst used for the burner reactor at a scale of $150000Nm^3/hr$ using X-ray diffraction (XRD), brunauer-emmett-teller (BET), atomic emission spectroscopy inductively coupled plasma (AES ICP), $H_2$ temperature programmed reduction ($H_2$-TPR), and $NH_3$ temperature programmed desorption ($NH_3$-TPD) analysis. Since the crystallization of the $VO_x$ and phase transition of $TiO_2$ did not occur, it was concluded that the catalyst was not deactivated by the thermal effect. In addition, from the elemental analysis showing that a large quantity of calcium was detected but not sulfur, the deactivation process of the $VO_x/TiO_2$ SCR catalyst was mainly caused by Ca but not by $SO_2$. The calcium was also found to decrease the catalytic activity by means of reducing $NH_3$ adsorption.

• Analytical Science and Technology
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• v.10 no.3
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• pp.196-202
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• 1997

New vanadium(V) complex, $(NH_4)_2[VO_2NTA]$, has been synthesized and its structure has been determined by solution and solid-state NMR spectroscopies as well as X-ray crystallography. The unit cell of the monoclinic crystals contains four complexes with $a=6.923(1){\AA}$, $b=8.824(2){\AA}$, $c=19.218(11){\AA}$ and ${\beta}=91.60(3)^{\circ}$ in the space group of $P2_1/n$. The $[VO_2NTA]^{2-}$ anion has distorted octahedral geometry with cis-$VO_2$ moiety. It is confirmed that the octahedral geometry is retained in both of solution and solid-state complexes.