• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.120-120
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• 2009

Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO($Ga_2O_3$ 3.w.t%) and Zn metal. The GZO thin films were deposited as a various $PO_2$ (oxygen gas content). Base pressure was $2{\times}10^{-6}torr$, and a working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe (Chang-min), a Hall Effect measurement (Ecopia) and an UV/VIS spectrometer (HP). The minimum resistivity of film was $6.5{\times}10^{-4}[{\Omega}-cm]$ and the average transmittance of over 80% was seen in the visible range

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.178.2-178.2
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• 2015

In and Ga doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered Polycarbonate (PC) substrates with RF magnetron sputtering and then the effect of Cu buffer layer on the optical and electrical properties of the films was investigated. While IGZO single layer films show the electrical resistivity of $1.2{\times}10-1{\Omega}cm$, IGZO/Cu bi-layered films show a lower resistivity of $1.6{\times}10-3{\Omega}cm$. Although the optical transmittance of the films in a visible wave length range is deteriorated by Cu buffer layer, IGZO films with 5 nm thick Cu buffer layer show the higher figure of merit of $2.6{\times}10-4{\Omega}-1$ than that of the IGZO single layer films due to the enhanced opto-electrical performance of the IGZO/Cu bi-layered films.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.63-66
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• 2004

Transparent MgO thin films were deposited on glass substrates by electron beam evaporation of MgO (99.99%) under $O_2$ atmosphere at 150-250 $^{\circ}C$. These films were characterized for their useful properties such as thickness, transmission, and refractive index using ultraviolet / visible (UV/VIS) spectrophotometer, scanning electron microscopy (SEM), and Spectroscopic Ellipsometry. The thickness of MgO films were measured by alpha step instrument and found to be 600 nm to 1000 nm and are meeting the stoichiometry. The transmission spectrum of these films shows transmittance values ${\sim}$92%..

• Journal of the Korean Ceramic Society
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• v.24 no.4
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• pp.335-342
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• 1987

There were several numbers of studies on chemically strengthening glass. Most of them were strengthened in molten salt bath below transformation range of glass. Apart from them, this study used solution hydration technique by Autoclave. After determining proper concentration of AgNO3 salt solution, experimental condition varied from 4hrs to 16hrs at relatively low temperature (180, 200, 220$^{\circ}C$). The results showed that the Soda-Lime-Silica glass could be strengthened by diffusion mechanism without influence of water above 15% salt solution. Because of Ag+ ion penetration in glass surface, yellow color appeared and decreased transmittance at visible range. Modulus of rupture was increased with the amount of exchange and brittleness was decreased.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.154-159
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• 2005

Low RF power density was used for preparing transparent conducting AI-doped ZnO (AZO) thin films by RF Magnetron Sputtering on Corning 1737 glass. The dependence of films' structural, optical and electrical properties on sputtering gas, film's thickness and substrate temperature were investigated. Low percent of incorporated H2 in Ar sputtering gas has proven to reduce film's resistivity and sheet resistance as low as $4.1\times10^{-3}{\Omega}.cm$. It also formed new preferred peaks orientation of (101) and (100) which indicated that the c-axis of AZO films was parallel to the substrate. From UN-VIS-NIR Spectrophotometer analysis, it further showed high optical transmittance at about $\~ 90\%$ at visible light spectra (400-700nm).

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.190-196
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• 1998

Amorphous ternary $Si_xC_yN-z$ thin films were obtained by plasma enhanced chemical vapor deposition(PECVD) using $N_2, SiH_4 \;and \;C_2H_4$ as the reaction sources. The chemical state were characterized by x-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy(FTIR). The optical properties of the thin films were investigated by UV-visible spectrophotometer and ellipsometer, and the optical band gaps of thin films were determined from corresponding transmittance spectra following Tauc equation.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.568-571
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• 2005

Highly transparent ZnO films with low resistivity for thin film solar cell applications were fabricated at low temperature by rf magnetron sputtering. Al-doped ZnO films were deposited on glass substrates at a substrate temperature of $200^{\circ}C$. electrical and optical properties of the ZnO:Al films were investigated in terms of the reparation conditions. The transmittance of the ZnO:Al films in the visible range is 90 %. The lowest resistivity of the ZnO:Al films is about $5.7\times10^{-4}$ $\Omega$ cm at the Al content of 2.5 wt% with the film thickness of 500 nm. After deposition, the smooth surface of ZnO:Al films were etched in diluted HCl (0.5%) to investigate the variation of electrical and surface morphology properties due to an textured surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.138-138
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• 2009

Al, Ga and In doped ZnO thin film were prepared by faing targets sputtering as a function of oxygen gas contents at R.T. Base pressure was $2{\times}10^{-6}torr$, and working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe (Chang-min), a Hall Effect measurement (Ecopia) and an UV/VIS spectrometer (HP). The minimum resistivities of AZO, GZO and IZO thin film were $6.5{times}10^{-4}[{\Omega}-cm],5.5{\times}10^{-4}[{\Omega}-cm]$ and $4.29{\times}10^{-4}[{\Omega}-cm]$. The average transmittance of over 80% was seen in the visible range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.321-324
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• 2013

In this study, The RF magnetron sputter and evaporator was on glass substrates 30 mm ${\times}$ 30 mm OMO multilayer thin film structure is applied to the low-e. Structural and optical properties, a thin film was produced, the variable was placed into a variable deposition time of the oxide layer. According to the XRD measurement results there is no peak that satisfies the Bragg's law ($2dsin{\theta}=n{\lambda}$) which confirmed that it is an amorphous structure. RMS value of the results of the AFM measurement, has a roughness of less than 2 nm. transmittance measurements results, visible light region an average 80%, IR region 40% showed.

• Textile Coloration and Finishing
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• v.31 no.4
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• pp.268-275
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• 2019

In this study, silk fabrics was dyed with sappan wood extracts fermented for 5 and 15 days, respectively, and then the dyeability, durability and the functionality of the dyed silk were investigated. Before dyeing, the silk was pretreated with chitosan-acetic acid solution or chitosan acetic acid and illite blend solution. Thereafter, UV-Visible transmittance, color, fastness, antimicrobial activity, and the FIR emissivity were analyzed. As a result, the K/S value was higher in the samples that were not pre-treated or fermented. Regardless of fermentation, the lightfastness was not significantly different. The color fastness to washing was slightly better when the samples were pretreated with chitosan-acetic acid and illite, and then dyed with extracts fermented 5 days. In addition, all samples showed high antimicrobial activity of 99.9%, regardless of the fermentation. Far-infrared emissivity was confirmed to be slightly increased by the illite and chitosan-acetic acid solution treatment compared to the untreated sample.