• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.150-154
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• 1998

Photoluminescence(PL), XRD, TEM results $5\times1016/\textrm{cm}^2, 1\times10^{17}/\textrm{cm}^2, 3\times10^{17}/\textrm{cm}^2$ Si-implanted $SiO_2$ films on crystalline silicon are reported. At low dose implantation and low annealing temperature, visible PL are observed. The PL spectrum has 7400$\AA$ and 8360$\AA$ peaks. As annealing time increased, the PL intensity are increased and peak positions are changed. The PL spectrum are not observed at high dose implantation and high annealing temperature. For the samples of low dose and high annealing temperature, visible PL are observed at short annealing time (30 minutes) and disappear for more than 1 hour annealing. From XRD and TEM results, silicon cluster are related to nonradiative defects. It is concluded that the origin of visible PL in Si implanted SiO2 films are not nanocrystal but two kinds of radiative defects. The Si-O-O bonding related defects (O rich defects) and Si-Si-O bonding related defects (Si rich defects) are related to the PL spectrum and depend on concentraion of Si implantation, annealing temperature and time.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.103-108
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• 2004

High-quality ZnO films were grown on sapphire (001) substrates by the atomic layer epitaxy (ALE) technique using DEZn as a Zinc precusor and $H_2O $ as an oxidant at both $170^{\circ}C$ and $400^{\circ}C$ which are in the ALE and the CVD process temperature ranges, respectively. The films were annealed in an oxygen atmosphere in the temperature range from 600 to 100$0^{\circ}C$ for an hour and then investigate photoluminescence (PL) properties using He-Cd laser. PL intensity tends to increases as the annealing temperature increase for both the annealed ZnO films grown at $170^{\circ}C$ and $400^{\circ}C$ , while PL did not nearly occur at the as-deposited ones. The PL intensity of the ZnO film grown at $400^{\circ}C$ is low after it is annealed at high temperature owing to a large number of Zn-Zn bonds although it has increased in the visible light wavelength region after annealing. In contrast the PL intensity has increased significant in the visible light region after annealing

• Journal of The Korean Astronomical Society
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• v.49 no.1
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• pp.45-51
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• 2016

The coronagraph is an instrument that enables the investigation of faint features in the vicinity of the Sun, particularly coronal mass ejections (CMEs). So far coronagraphic observations have been mainly used to determine the geometric and kinematic parameters of CMEs. Here, we introduce a new method for the determination of CME temperature using a two filter (4025 Å and 3934 Å) coronagraph system. The thermal motion of free electrons in CMEs broadens the absorption lines in the optical spectra that are produced by the Thomson scattering of visible light originating in the photosphere, which affects the intensity ratio at two different wavelengths. Thus the CME temperature can be inferred from the intensity ratio measured by the two filter coronagraph system. We demonstrate the method by invoking the graduated cylindrical shell (GCS) model for the 3-dimensional CME density distribution and discuss its significance.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.5 s.182
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• pp.190-196
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• 2006

Transparent materials are widely used in the fields of optic parts and bio industry. We have experiment to find out the characteristics of the micromachining inside transparent materials using femtosecond laser pulses. With its non-linear effects by very high peak intensity, filament (plasma channel) was formed by the cause of the self-focusing and the self-defocusing. Physical damage could be found when the intensity is high enough to give rise to the thermal stress or evaporation. At the vicinity of the power which makes the visible damage or modification, the structural modification occurs with the slow scanning speed. According to the polarization direction to the scanning direction, the filament quality is quite different. There is a good quality when the polarization direction is parallel to the scanning direction. For fine filament, we could suggest the conditions of the high numerical aperture lens, the short shift of focusing point, the low scanning speed and the low power below 20 mW. As the examples of optics parts, we fabricated the fresnel zone plate with the $225{\mu}m$ diameter and Y-bend optical wave guide with the $5{\mu}m$ width.

• Journal of Ginseng Research
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• v.25 no.2
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• pp.82-88
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• 2001

This study was carried out to investigate a point of difference between normal and inferior Korean red ginseng (Naeback red ginseng = red ginseng with white part of clear boundary in phloem and/or xylem of ginseng body, saengnaeback red ginseng red ginseng with white part of indistinct boundary). White part with clear or indistinct boundary in center of ginseng body was observed in inferior red ginseng (naeback and saengnaeback red ginseng), and the differences in the internal color intensity was also found with naked eye. In hunter color values of normal and inferior parts of red ginseng in accordance with particle size, L value was increased with a diminishment in particle size, while a and b value were decreased. Absorbance at visible spectrum did not differ from water and 70% ethanol extract from normal and inferior parts of red ginseng, but absorbance in UV spectrum of extract from naeback part showed higher than those of normal and saengnaeback part. In comparison of intrastructure by electron microscope, the horizontal and vertical section of cortex and pith layer from normal part showed the very dense state, but small holes were found in naeback part of red ginseng by naked eye and electron microscope. The specific surface area of normal, naeback and saengnaeback part appeared 3.02, 3.33 and 6.55 ㎡/g, respectively. From above results, we consider saengnaeback red ginseng is red ginseng in the intermediate process which normal red ginseng changes to naeback red ginseng.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.583-588
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• 1990

Glass films in the binary system B2O3-SiO2 and Al2O3-SiO2 were prepared on soda-lime-silica slide glass by the dip-coating technique from TEOS and boric acid or aluminum nitrate. Thickness of the films varying with viscosity and withdrawal speed were measured and effect of composition and firing temperature on the properties such as transmittance and refractive index were investigated. nM2O3.(100-n)SiO2(M=B or Al) films containing up to 20mol% B2O3 and 40mol% Al2O3 were transparent. Maximum transmittance at visible range were obtained for the sample containing 15mol% Ba2O3 and 32.5mol% Al2O3 and heat-treated at 50$0^{\circ}C$, respectively. Refractive index of the film containing 15mol% B2O3 was mininum in the B2O3-SiO2 binary system and minimal refractive index was appeared at the film containing 32.5mol% Al2O3. In IP spectra, addition of B2O3 were increased absorption peak intensity of B-O and Si-O-B bond and addition of Al2O3 were decreased absorption peak intensity of Si-O bond, respectively.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.44-49
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• 2009

Conjugated nanocrystals using CdSe/ZnS core/shell nanocrystal quantum dots modified by organic linkers and glucose oxidase (GOx) were prepared for use as biosensors. The trioctylphophine oxide (TOPO)-capped QDs were first modified to give them water-solubility by terminal carboxyl groups that were bonded to the amino groups of GOx through an EDC/NHS coupling reaction. As the glucose concentration increased, the photoluminescence intensity was enhanced linearly due to the electron transfer during the enzymatic reaction. The UV-visible spectra of the as-prepared QDs are identical to that of QDs-MAA. This shows that these QDs do not become agglomerated during ligand exchanges. A photoluminescence (PL) spectroscopic study showed that the PL intensity of the QDs-GOx bioconjugates was increased in the presence of glucose. These glucose sensors showed linearity up to approximately 15 mM and became gradually saturated above 15 mM because the excess glucose did not affect the enzymatic oxidation reaction past that amount. These biosensors show highly sensitive variation in terms of their photoluminescence depending on the glucose concentration.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.33 no.4
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• pp.352-359
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• 1997

The visual acuity of filefish Stephanolepis cirrhifer was studied through a series of experiments by observing their responses to target plates. The fish were trained to respond to the target plates made of white acrylic resin with a vertical black line 5cm long in the center. The width of the black line ranged from 0.2mm to 8.0 mm. The line width was diminished unto the fish could no longer distinguish the line at a distance of 100 cm from the target plate. This was repeated under light intensities of 400, 20, 5, 3 and 1 lx at the water surface. Fish were rewarded with bait in front of the target plate if the fish went to the target date (i.e., success).The results show that the training effect of 1lensh had a success rate of over 80% and that the reach times to the target plates were 4~5 seconds over 210 experimental tunes. The success rate was high using the thick line with strong apparent contrast, but was low at the 1 lx. The visible critical width of line became thick with decreasing light intensity, 0.24mm at 400 lx, followed by 0.30mm at 20 lx, 0.40mm at 5 lx, 0.46 mm at 3 lx and 2.87mm at 1 lx. The apparent contrast for visible critical width of line increased with decreasing light intensity, 0.01 at 400 and 20 lx, 0.02 at 5 lx, 0.03 at 3 lx and 0.09 at 1 lx. The line acuity of filefish was best 1.21 at the 400 lx, followed by 0.97 at 20 lx, 0.73 at 5 lx, 0.63 at 3 lx and sharply decreased to 0.10 at 1 lx. The visible ranges for 1mm and 6mm in width of line were about 4.2 m and 25.0 m at the 400 lx light intensity and decreased m 1/14 times and 1/12 times of the 400 lx at 1 lx, respectively.

• Bulletin of the Korean Chemical Society
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• v.33 no.9
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• pp.3055-3060
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• 2012

A simple, rapid and sensitive spectrofluorometric method was developed for the determination of folic acid (FA), based on its quenching effect on the fluorescence intensity of enoxacin (ENX)-europium ($Eu^{3+}$) complex as a fluorescent probe. Fluorometric interaction between ENX-$Eu^{3+}$ complex and FA was studied using UV-visible and fluorescence spectroscopy. The quenched fluorescence intensity at an emission wavelength of 614 nm was proportional to the concentration of FA. Optimum conditions for the determination of FA were investigated. Under optimal conditions, the reduced fluorescence intensity at 614 nm was responded linearly with the concentration of FA. The linearity was maintained in the range of $1.25{\times}10^{-9}$ to $1.50{\times}10^{-7}$ M (R = 0.9986) with the limit of detection ($3S_b/m$) (where $S_b$ is the standard deviation of blank and m is the slop of linear calibration curve) of $6.94{\times}10^{-10}$ M. The relative standard deviation (RSD) for 9 repeated measurements of $1.0{\times}10^{-9}$ M FA was 1.42%. This method was simple, cost effective, and relatively free of interference from coexisting substances. Successful determinations of FA in pharmaceutical formulation and biological samples with the developed method were demonstrated.

• Journal of Information Display
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• v.9 no.4
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• pp.21-29
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• 2008

We studied both the wavelength and intensity dependent photo-responses (photofield-effect) in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). During the a-IGZO TFT illumination with the wavelength range from $460\sim660$ nm (visible range), the off-state drain current $(I_{DS_off})$ only slightly increased while a large increase was observed for the wavelength below 400 nm. The observed results are consistent with the optical gap of $\sim$3.05eV extracted from the absorption measurement. The a-IGZO TFT properties under monochromatic illumination ($\lambda$=420nm) with different intensity was also investigated and $I_{DS_off}$ was found to increase with the light intensity. Throughout the study, the field-effect mobility $(\mu_{eff})$ is almost unchanged. But due to photo-generated charge trapping, a negative threshold voltage $(V_{th})$ shift is observed. The mathematical analysis of the photofield-effect suggests that a highly efficient UV photocurrent conversion process in TFT off-region takes place. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than reported value for hydrogenated amorphous silicon (a-Si:H), which can explain a good switching properties observed for a-IGZO TFTs.