• Title/Summary/Keyword: Video Signal Generator

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Design of High Speed VRAM ASIC for Image Signal Processing (영상 신호처리를 위한 고속 VRAM ASIC 설계)

  • Seol, Wook;Song, Chang-Young;Kim, Dae-Soon;Kim, Hwan-Yong
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.19 no.6
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    • pp.1046-1055
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    • 1994
  • In this paper, to design high speed 1 line VRAM(Video RAM) suitable for image signal processing with ASIC(Application Specific IC) method, the VRAM memory core has been designed using 3-TR dual-port dynamic cell which has excellent access time and integration characteristics. High speed pipeline operation was attained by separating the first row from the subarray 1 memory core and the simultaneous I/Q operation for a selected single address was made possible by adopting data-latch scheme. Peripheral circuits were designed implementing address selector and 1/2V voltage generator. Integrated ASIC has been optimized using 1.5[ m] CMOS design rule.

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An Emulation System for Efficient Verification of ASIC Design (ASIC 설계의 효과적인 검증을 위한 에뮬레이션 시스템)

  • 유광기;정정화
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.10
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    • pp.17-28
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    • 1999
  • In this paper, an ASIC emulation system called ACE (ASIC Emulator) is proposed. It can produce the prototype of target ASIC in a short time and verify the function of ASIC circuit immediately The ACE is consist of emulation software in which there are EDIF reader, library translator, technology mapper, circuit partitioner and LDF generator and emulation hardware including emulation board and logic analyzer. Technology mapping is consist of three steps such as circuit partitioning and extraction of logic function, minimization of logic function and grouping of logic function. During those procedures, the number of basic logic blocks and maximum levels are minimized by making the output to be assigned in a same block sharing product-terms and input variables as much as possible. Circuit partitioner obtain chip-level netlists satisfying some constraints on routing structure of emulation board as well as the architecture of FPGA chip. A new partitioning algorithm whose objective function is the minimization of the number of interconnections among FPGA chips and among group of FPGA chips is proposed. The routing structure of emulation board take the advantage of complete graph and partial crossbar structure in order to minimize the interconnection delay between FPGA chips regardless of circuit size. logic analyzer display the waveform of probing signal on PC monitor that is designated by user. In order to evaluate the performance of the proposed emulation system, video Quad-splitter, one of the commercial ASIC, is implemented on the emulation board. Experimental results show that it is operated in the real time of 14.3MHz and functioned perfectly.

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A 10b 200MS/s 75.6mW $0.76mm^2$ 65nm CMOS Pipeline ADC for HDTV Applications (HDTV 응용을 위한 10비트 200MS/s 75.6mW $0.76mm^2$ 65nm CMOS 파이프라인 A/D 변환기)

  • Park, Beom-Soo;Kim, Young-Ju;Park, Seung-Jae;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.3
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    • pp.60-68
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    • 2009
  • This work proposes a 10b 200MS/s 65nm CMOS ADC for high-definition video systems such as HDTV requiring high resolution and fast operating speed simultaneously. The proposed ADC employs a four-step pipeline architecture to minimize power consumption and chip area. The input SHA based on four capacitors reduces the output signal range from $1.4V_{p-p}$ to $1.0V_{p-p}$ considering high input signal levels at a low supply voltage of 1.2V. The proposed three-stage amplifiers in the input SHA and MDAC1 overcome the low output resistance problem as commonly observed in a 65nm CMOS process. The proposed multipath frequency-compensation technique enables the conventional RNMC based three-stage amplifiers to achieve a stable operation at a high sampling rate of 200MS/s. The conventional switched-bias power-reduction technique in the sub-ranging flash ADCs further reduces power consumption while the reference generator integrated on chip with optional off-chip reference voltages allows versatile system a locations. The prototype ADC in a 65nm CMOS technology demonstrates a measured DNL and INL within 0.19LSB and 0.61LSB, respectively. The ADC shows a maximum SNDR of 54.BdB and 52.4dB and a maximum SFDR of 72.9dB and 64.8dB at 150MS/S and 200MS/s, respectively. The proposed ADC occupies an active die area of $0.76mm^2$ and consumes 75.6mW at a 1.2V supply voltage.