• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.1
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• pp.52-58
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• 2014

This study consists of two parts. The first discusses the development of a single production forming machine which was reported in earlier papers. The second outlines the development of a multi-production forming machine, which consists primarily of a film feeding unit, an unwinding unit, and a heating block unit. The heating block unit of the multi-production forming machine has 30 members per die. An analysis of the stress deformation and temperature deviation of this machine is carried out using ANSYS Workbench and CFX-11 under the design conditions. According to this analysis, the maximum deflection in the Z-direction is $0.05104{\mu}m$ and the maximum temperature deviation is $0.7^{\circ}C$ when the temperature of the heating block unit is $175^{\circ}C$. It was also found that these values are structurally safe. The advantage of the developed multi-production forming machine is demonstrated to be in its offering of a proper voice test.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.112-112
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• 2011

The interaction of water molecules with solid surfaces has been a subject of considerable interests, due to its importance in the fields from atmospheric and environmental phenomena to biology, catalysis and electrochemistry [1,2]. Among various kinds of surfaces, a lot of theoretical and experimental studies have been performed regarding water on MgO(100), however, to date, there has been no direct observation of water molecules on MgO by scanning tunneling microscope (STM) as compared with those on metal surface. Here, we will present the direct observation and manipulation of single water molecules on ultrathin MgO(100) films using low-temperature scanning tunneling microscope (LT-STM) [3]. Our results rationalize the previous theoretical predictions of isolated water molecules on MgO including the optimum adsorption sites and non-dissociative adsorption of water. Moreover, we were able to dissociate a water molecule by exciting the vibrational mode of water, which is unattainable on metal surfaces. The enhanced residual time of tunneling electrons in molecules on the insulating film is responsible for this unique pathway toward dissociation of water.

• Bulletin of the Korean Chemical Society
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• v.31 no.6
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• pp.1649-1656
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• 2010

Internal reorganization energy due to the structural relaxation in hole or electron hopping mechanism is one of the measurements of key indices in designing an organic thin film transistor (OTFT) for flexible display devices. In this study, the reorganization energies of dicyanoanthracenes for the hole and electron transfer were estimated by adiabatic potential energy surface and normal mode analysis method in order to examine the effect on the energies for the positional variation of the cyano substituents in the anthracene as a protocol of acenes to design an organic field effect transistor. The reorganization energy for the hole transfer was reduced considerably upon cyanation of anthracene, especially at the 9,10-positions of anthracene, and the origin of the reduction was interpreted in terms of understanding the coupling of vibrational modes to the hole transfer.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.470-474
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• 2013

Surfaced-enhanced Raman scattering (SERS) of 4,4'-biphenyldithiol (BPDT) has been investigated at a silver island film. Ordinary Raman (OR) spectra of neat sample in solid state and in basic solution have also been taken for comparison. The spectral feature in the SERS spectrum was similar to that for the OR spectrum in basic solution, except for the broadening of ring stretching bands indicative of the presence of surface-phenyl ring $\pi$ interaction. In contrast, only absence of the C-H stretching band with very small Raman scattering cross-section seemed not pertinent in judging the definitive orientation of molecule. The observed vibrational bands in the SERS spectrum have been assigned by referring to the normal modes and wavenumbers from density functional theory (DFT) calculations of the simple model as 4,4'-biphenyldithiolates bound to two Ag atoms at the both ends. Excellent agreement between the experimental and the calculated results was achieved, which is remarkable considering the level of theory applied.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.473-480
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• 1994

The electron tunnel effect in polvimide LB films sandwiched between metal electrodes has been investigated in the present work by a study of both the elastic and inelastic tunneling components. By the results of elastic tunneling experiments in Au/Pl/Au tunneling junction, we can judge the height and thickness of tunnel barrier. The inelastic current in Inelastic Electron Tunneling Spectroscopy(IETS) is due to the interaction of the tunneling electron with the vibrational modes of the molecular species in the barrier. Measurements are done on Au/PI/Pb tunneling junctions. The spectra obtained are the second derivatives of the current-voltage characteristics of these junctions : specifically, d$^{2}$1/dV$^{2}$ as a function of voltage V. Because the energies measured by IETS can be directly compared to those measured by infrared and Raman spectroscopy, IR-RAS spectroscopy also measured for reference.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.19-23
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• 2009

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

• Journal of the Korea Furniture Society
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• v.11 no.1
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• pp.45-51
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• 2000

It was thought that the stiffness of a coated specimen became lower than that of the solid wood because the stiffness of the dried film of coating material is lower than that of the solid wood. The authors were trying to compare the effect of lacquer varnish and rhus lacquer on the resonant frequency of the solid woods for the violin, spruce and maple. Vibration modal shape of coated specimens were same to those of solid woods, but the frequency became lower at each mode as were expected regardless of coat. frequency decrement of coated specimen was getting larger at upper mode in both European violin woods, however, rhus lacquer coated spruce specimens were less affected than lacquer varnish coated specimens.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.47-52
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• 2009

We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.

• Bulletin of the Korean Chemical Society
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• v.33 no.4
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• pp.1213-1219
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• 2012

The reorganization energy and the spectroscopic properties of 2,6-bis(5'-hexyl-thieno[3,2-b]thiophene-2'- yl)naphthalene (DH-TNT) and 2,6-bis(5'-hexyl-thieno[3,2-b]thiophene-2'-yl)anthracene (DH-TAT), which are composed of an acene unit and alkylated thienothiophene on both sides, as organic materials for display devices were calculated and the results were compared with experimental values. The lower reorganization energy of the DH-TAT over the DH-TNT calculated by the density functional theory is attributed to a smaller vibrational distortion because of the heavier building block of DH-TAT, and it shows a good field effect performance over the DH-TNT. The calculated spectra and the other spectroscopic characteristic of the compounds are well consistent with those of observed results.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.636-636
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• 2013

Since first discovery of strong Raman spectrum of molecules adsorbed on rough noble metal, surface enhanced Raman scattering (SERS) has been widely used for detection of molecules with low concentration. Surface plasmons at noble metal can enhance Raman spectrum and using Au nanostructures as substrates of SERS has advantages due to it has chemical stability and biocompatibility. However, the photoluminescence (PL) background from Au remains a problem because of obtaining molecular vibration information. Recently, graphene, two-dimensional atomic layer of carbon atoms, is also well known as PL quenchers for electronic and vibrational excitation. In this study, we observed SERS of single layer graphene on or under monolayer of Au nanoparticles (NPs). Single layer graphene is grown by chemical vapor deposition and transferred onto or under the monolayer of Au NPs by using PMMA transfer method. Monolayer of Au NPs prepared using Langmuir-Blodgett method on or under graphene surface provides closed and well-packed monolayer of Au NPs. Scanning electron microscopy (SEM) and Raman spectroscopy (WItec, 532 nm) were performed in order to confirm effects of Au NPs on enhanced Raman spectrum. Highly enhanced Raman signal of graphene by Au NPs were observed due to many hot-spots at gap of closed well-packed Au NPs. The results showed that single layer graphene provides larger SERS effects compared to multilayer graphene and the enhancement of the G band was larger than that of 2D band. Moreover, we confirm the appearance of D band in this study that is not clear in normal Raman spectrum. In our study, D band appearance is ascribed to the SERS effect resulted from defects induced graphene on Au NPs. Monolayer film of Au NPs under the graphene provided more highly enhanced graphene Raman signal compared to that on the graphene. The Au NPs-graphene SERS substrate can be possibly applied to biochemical sensing applications requiring highly sensitive and selective assays.