• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.153-153
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• 2012

Endpoint detection with plasma impedance monitoring and self-plasma optical emission spectroscopy is demonstrated for dielectric layers etching processes. For in-situ detecting endpoint, optical-emission spectroscopy (OES) is used for in-situ endpoint detection for plasma etching. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. To overcome these problems, the endpoint was determined by impedance signal variation from I-V monitoring (VI probe) and self-plasma optical emission spectroscopy. In addition, modified principal component analysis was applied to enhance sensitivity for small area etching. As a result, the sensitivity of this method is increased about twice better than that of OES. From plasma impedance monitoring and self-plasma optical emission spectroscopy, properties of plasma and chamber are analyzed, and real-time endpoint detection is achieved.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.2
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• pp.60.3-60.3
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• 2019

Binary systems of a white dwarf showing mass transfer activities are classified into cataclysmic variables and symbiotic stars. In the case of cataclysmic variables, the companion is usually a late type main sequence star filling its Roche lobe, where material is transferred through the inner Lagrangian point to form an accretion disk around the white dwarf. The disk becomes unstable and highly viscous when the surface density exceeds the critical density, leading to dwarf nova outbursts. In contrast, symbiotic stars are wide binary systems having a giant as the mass donor. Some fraction of giant stellar wind is accreted to the white dwarf giving rise to various symbiotic activities. In particular, half of symbiotics show Raman O VI at 6830 and 7088, which are important spectroscopic probe of mass transfer process. Monitoring observations using 1 m class telescopes will produce valuable information regarding the mass loss and mass transfer to white dwarf stars, shedding much light on the last stage of stellar evolution of low and intermediate mass stars.

• Journal of Periodontal and Implant Science
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• v.28 no.4
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• pp.659-678
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• 1998

In the present study, oligonucleotide probes based on 16S rRNA were taken to investigate the diversity of oral spirochetes without culture method. This is the first study that revealed oral spirochetes of both presently cultivable and uncultured oral spirochetes in Korean adult periodontitis patients. Subgingival plaque samples were taken from diseased sites(probing depth ${\geq}6\;mm$, experimental group, n=116) and healthy sites(probing depth${\leq}3mm$, control 1 group, n=28) in 29 patients with adult periodontitis, and from 20 periodontally healthy subjects(probing depth${\leq}3mm$, control 2 group, n=100). Following being examined under phase-contrast microscope, all samples were submitted to dot-blot hybridization after polymerase chain reacton with eubacterial primers. 5 species-specific probes(TVIN, TDEN, TMAL, TSOC, and TPEC) and 7 group-specific probes(TRE I, TRE II, TRE III, TRE IV, TRE V, TRE VI, and TRE VII) were used one by one for the identification of both cultivable and so far uncultivable oral spirochetes. All probes were labeled with digoxigenin(DIG)-ddUTP and detected by chemilumininescence. The following results were obtained. 1. Under phase-contrast microscope, 91.37% and 14.28% of oral spirochetes were observed in the experimental and control 1 groups, respectively. None of oral spirochetes were observed in control 2 group. 2. With universal probe, 98.27%, 46.42%, and 22.0% of oral spirochetes were observed in experimental, control 1, and control 2 groups, respectively. 3. With specific probe, 95.68%, 35.71%, and 19.0% of oral spirochetes were observed in experimental, control 1, and control 2 groups, respectively. 4. With species-specific probes, T. socranskii were recovered in a high percentage of sites(81.89%) examined, followed by T. maltophilum(50.0%), T. vincentii(36.20%), T. denticola(13.79%), respectively. With group- specific probes, TRE IV was recovered in a high percentage of sites(85.34%) examined, followed by TRE II(77.58%), TRE I(56.89%), TRE III(25.86%), TRE VI(5.17%), and TRE V(2.58%), respectively. 5. T. vincentii were only observed in the diseased sites, not in the healthy sites. 6. Neither T. pectinovorum nor group VII oral spirochetes were observed in any sites. The findings warrant further investgations of the recovered spirochetes to elucidate the possible associations of oral spirochetal prevalence in race and types of periodontitis, pathogenesis of T. vincentii and the possible distributional change of oral spirochetes before and after treatments.

• Journal of Korean Neurosurgical Society
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• v.64 no.2
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• pp.282-288
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• 2021

Objective : Electrooculography (EOG) records eyeball movements as changes in the potential difference between the negatively charged retina and the positively charged cornea. We aimed to investigate whether reliable EOG waveforms can be evoked by electrical stimulation of the oculomotor and abducens nerves during skull base surgery. Methods : We retrospectively reviewed the records of 18 patients who had undergone a skull base tumor surgery using EOG (11 craniotomies and seven endonasal endoscopic surgeries). Stimulation was performed at 5 Hz with a stimulus duration of 200 μs and an intensity of 0.1-5 mA using a concentric bipolar probe. Recording electrodes were placed on the upper (active) and lower (reference) eyelids, and on the outer corners of both eyes; the active electrode was placed on the contralateral side. Results : Reproducibly triggered EOG waveforms were observed in all cases. Electrical stimulation of cranial nerves (CNs) III and VI elicited positive waveforms and negative waveforms, respectively, in the horizontal recording. The median latencies were 3.1 and 0.5 ms for craniotomies and endonasal endoscopic surgeries, respectively (p=0.007). Additionally, the median amplitudes were 33.7 and 46.4 μV for craniotomies and endonasal endoscopic surgeries, respectively (p=0.40). Conclusion : This study showed reliably triggered EOG waveforms with stimulation of CNs III and VI during skull base surgery. The latency was different according to the point of stimulation and thus predictable. As EOG is noninvasive and relatively easy to perform, it can be used to identify the ocular motor nerves during surgeries as an alternative of electromyography.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.331-340
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• 2008

A method of measuring the current and voltage is suggested in the circuit of cold cathode fluorescent lamps (CCFLs) which are driven at a high frequency of $50{\sim}100\;kHz$ and a high voltage of several kV. It is difficult to measure the current and voltage in the lamp circuit, because the impedance of the probe at high voltage side causes the leakage current and the variation of luminance. According to the analysis of equivalence circuit with the probe impedance and leakage current, the proper measuring method is to adjust the input DC voltage and to keep the specific luminance when the probe is installed at a high voltage circuit. The lamp current is detected with a current probe or a high frequency current meter at the ground side and the voltage is measured with a high voltage probe at the high voltage side of lamp. The lamp voltage($V_C$) is measured between the ballast capacitor and the lamp electrode, and the output voltage($V_I$) of inverter is measured between inverter output and ballast capacitor. As the phases of lamp voltage($V_C$) and current ($I_G$) are nearly the same values, the real power of lamp is the product of the lamp voltage($V_C$) by the lamp current($I_G$). The measured value of the phase difference between inverter output voltage($V_I$) and lamp current($I_G$) is appreciably deviated from the calculated value at $cos{\theta}=V_C/V_I$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.63.1-63.1
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• 2011

현재 상용 중인 터치패널의 전도성 필름으로는 ITO가 주로 사용된다. 하지만, 디스플레이 기기의 수요 증가와 Indium의 고갈로 인한 ITO의 수요 공급 불균형으로 인한 원가 문제가 대두되고 있다. 이 때문에, Carbon nanotube (CNT), Graphene 등의 대체 투명 전도성 물질들이 연구 중에 있지만 투과율 및 저항 문제 등이 문제가 되고 있다. 본 연구에서는 투명 전도성 필름의 광 투과도 향상을 위하여, 자외선 경화 레진을 이용하여, 전도성 필름 상에 모스 아이 레진 패턴을 형성하는 실험을 진행하였다. 패턴이 형성된 이후에는 Scanning Electro Microscope를 통하여 패턴의 형성 유무를 관찰하였고, UV-vis와 4-point probe를 이용하여 투과도 및 저항을 측정하였다. 실험 결과 모스아이패턴을 필름에 패터닝 함으로써, 전체적으로 투과도가 증가된다는 것을 확인 할 수 있었으며, 투과도의 증가폭은 단면 패터닝보다는 양면 패터닝을 한 경우가 높았다. 그리고 저항 변화에 있어서는 패턴이 있는 부분의 경우 표면 잔여층으로 인하여 급격하게 증가하였지만, 전도면 반대편에 패터닝을 진행한 경우 거의 변화하지 않았다는 것을 확인할 수 있었다. 결과적으로, 본 연구를 통해 나노 임프린트 리소그래피를 통해 전도성 폴리머 필름 상부에 모스아이나노 구조물을 제작하였고, 이를 통해 기존의 전도성 폴리머 필름의 낮은 투과율을 향상시킬 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.26-27
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• 2008

본 연구는 투명전도성전극(TCO)인 ITO를 대체하기 위해 ZnO에 $Al_2O_3$, $SiO_2$, $TiO_2$의 불순물을 도핑하여 박막의 전기적 및 광학적 특성에 관한 연구를 하였다. 불순물 도핑은 2wt.%로 진행 하였고, 동일한 전압과 두께로 그 특성을 비교 하였으며, 특성으로는 UV-Vis를 이용한 광투과율 측정과 광투과율을 이용한 박막의 광학적 밴드갭과 굴절률을 계산 하였다. 전기적 특성으로는 4-Point Probe로 면저항과 비저항값을 측정하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.57.2-57.2
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• 2010

대표적인 투명 전극 재료indium tin oxide(ITO)의 경우, 우수한 투과성과 낮은 면저항을 기반으로 차세대 디스플레이용 전극으로 각광 받고 있다. 하지만 제조 단가가 높으며 brittle 하여 유연 디스플레이에 적용이 어려우며 대면적 제조가 어렵다는 단점이 있어 이를 대체할 수 있는 새로운 물질이 필요한 실정이다. 대표적인 후보 물질로는 탄소 육각형이 서로 연결된 관 형태인 탄소나노튜브가 있으며 뛰어난 전기 전도도와 물리적 특성을 투명 전극에 적용하기 위한 연구가 활발히 진행 중이다. 본 연구에서는 탄소나노튜브 투명 전극 제조 시 잔여 분산제 제거 및 doping의 효과를 위해 수행되는 산처리 공정을 하지 않고 투명 전극의 특성을 향상 시키는 연구를 진행하였다. 제작된 박막에 압력을 인가하여 탄소나노튜브 네트워킹의 향상과 두께의 감소를 얻을 수 있었다. 실험에 사용된 탄소나노튜브는 아크 방전 공정으로 합성된 2nm의 single wall 탄소나노튜브이며 이를 분산제인 sodium dodecyl sulfate(SDS)에 분산하여 용액형태로 제작하여 사용하였다. 분산제를 제거하기 위해 탈이온수를 사용하였으며 고분자 mold를 사용하여 압력을 인가하여 그에 따른 전기적, 광학적 변화를 관찰하였다. 제조된SWCNT 박막은 four point probe measurement를 이용하여 sheet resistance를 측정하였고 UV-vis를 이용하여 투과도와 반사도 등의 광학적 특성을 측정하였다. 박막의 표면은 field emission scanning electron microscope (FESEM)과 Atomic force microscope(AFM)를 이용하여 관찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.182-182
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• 2012

Plasma etching is used in various semiconductor processing steps. In plasma etcher, optical- emission spectroscopy (OES) is widely used for in-situ endpoint detection. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. Because of these problems, the object is to investigate the suitability of using plasma impedance monitoring (PIM) and self plasma optical emission spectrocopy (SPOES) with statistical approach for in-situ endpoint detection. The endpoint was determined by impedance signal variation from I-V monitor (VI probe) and optical emission signal from SPOES. However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ and SiNx layers are etched by fluorocarbon on inductive coupled plasma (ICP) etcher, if the proportion of $SiO_2$ and SiNx area on Si wafer are small. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance monitoring is compared with optical emission spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.32-32
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• 2011

Plasma etching is used in microelectronic processing for patterning of micro- and nano-scale devices. Commonly, optical emission spectroscopy (OES) is widely used for real-time endpoint detection for plasma etching. However, if the viewport for optical-emission monitoring becomes blurred by polymer film due to prolonged use of the etching system, optical-emission monitoring becomes impossible. In addition, when the exposed area ratio on the wafer is small, changes in the optical emission are so slight that it is almost impossible to detect the endpoint of etching. For this reason, as a simple method of detecting variations in plasma without contamination of the reaction chamber at low cost, a method of measuring plasma impedance is being examined. The object in this research is to investigate the suitability of using plasma impedance monitoring (PIM) with statistical approach for real-time endpoint detection of $SiO_2$ etching. The endpoint was determined by impedance signal variation from I-V monitor (VI probe). However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ film on Si wafer is etched by fluorocarbon plasma on inductive coupled plasma (ICP) etcher. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance analysis is compared with optical emission spectroscopy (OES). From impedance data, we tried to analyze physical properties of plasma, and real-time endpoint detection can be achieved.