• 제목/요약/키워드: Vertical tunneling

검색결과 42건 처리시간 0.022초

ASSESSMENT OF TUNNELLING-INDUCED BUILDING DAMAGE

  • Son, Moo-Rak
    • 한국지반공학회:학술대회논문집
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    • 한국지반공학회 2010년도 추계 학술발표회 3차
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    • pp.86-95
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    • 2010
  • Ground movements during tunnelling have the potential for major impact on nearby buildings, utilities and streets. The impacts on buildings are assessed by linking the magnitude of ground loss at the source of ground loss around tunnel to the lateral and vertical displacements on the ground surface, and then to the lateral strain and angular distortion, and resulting damage in the building. To prevent or mitigate the impacts on nearby buildings, it is important to understand the whole mechanism from tunnelling to building damage. This paper discusses tunneling-induced ground movements and their impacts on nearby buildings, including the importance of the soil-structure interactions. In addition, a building damage criterion, which is based on the state of strain, is presented and discussed in detail and the overall damage assessment procedure is provided for the estimation of tunnelling-induced building damage considering the effect of soil-structure interaction.

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The effect of in-situ stress parameters and metamorphism on the geomechanical and mineralogical behavior of tunnel rocks

  • Kadir Karaman
    • Geomechanics and Engineering
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    • 제37권3호
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    • pp.213-222
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    • 2024
  • Determination of jointed rock mass properties plays a significant role in the design and construction of underground structures such as tunneling and mining. Rock mass classification systems such as Rock Mass Rating (RMR), Rock Mass Index (RMi), Rock Mass Quality (Q), and deformation modulus (Em) are determined from the jointed rock masses. However, parameters of jointed rock masses can be affected by the tunnel depth below the surface due to the effect of the in situ stresses. In addition, the geomechanical properties of rocks change due to the effect of metamorphism. Therefore, the main objective of this study is to apply correlation analysis to investigate the relationships between rock mass properties and some parameters related to the depth of the tunnel studied. For this purpose, the field work consisted of determining rock mass parameters in a tunnel alignment (~7.1 km) at varying depths from 21 m to 431 m below ground surface. At the same excavation depths, thirty-seven rock types were also sampled and tested in the laboratory. Correlations were made between vertical stress and depth, horizontal/vertical stress ratio (k) and depth, k and Em, k and RMi, k and point load index (PLI), k and Brazilian tensile strength (BTS), Em and uniaxial compressive strength (UCS), UCS and PLI, UCS and BTS. Relationships were significant (significance level=0.000) at the confidence interval of 95% (r = 0.77-0.88) between the data pairs for the rocks taken from depths greater than 166 m where the ratio of horizontal to vertical stress is between 0.6 and 1.2. The in-situ stress parameters affected rock mass properties as well as metamorphism which affected the geomechanical properties of rock materials by affecting the behavior of minerals and textures within rocks. This study revealed that in-situ stress parameters and metamorphism should be reviewed when tunnel studies are carried out.

직선 이동용 나노 미세 이동장치의 제작 (Construction of Nano-meter Scale Linear Translation System)

  • 정구은;강세종
    • 한국진공학회지
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    • 제15권5호
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    • pp.512-517
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    • 2006
  • 신뢰도 높은 나노 직선 이동장치를 제작하였다. 장치는 기본 몸체에 고정된 6개의 피에조 다리들과 이들이 붙잡고 있는 사파이어 육각기둥으로 이루어 졌다. 특정한 전압파형을 피에조 다리에 인가하여 피에조 다리를 순차적으로 움직임으로 육각기둥을 앞으로 혹은 뒤로 움직인다. 직선 이동장치를 지표면에 수직 방향으로 시험구동 하였다. 육각기둥이 수 mm를 움직이는 동안 속도가 일정함을 확인하였다. 위쪽으로 올라가는 가장 느린 속도는 $1.7{\times}10^{-6}m/s$, 즉 ${\sim}28.3nm$/걸음이었고 아래쪽으로 내려가는 가장 느린 속도는 중력의 도움을 받아 ${\sim}3.7{\times}10^{-6}m/s$, 즉 ${\sim}61.7nm$/걸음 이었다. 피에조에 인가된 전압을 증가시키면 육각기둥의 이동속도가 선형으로 증가하였다. 이 직선 이동장치를 주사형 터널링 현미경의 접근 장치로 사용할 것이다.

Experimental and numerical study on the stability of slurry shield tunneling in circular-gravel layer with different cover-span ratios

  • Liu, Xinrong;Liu, Dongshuang;Xiong, Fei;Han, Yafeng;Liu, Ronghan;Meng, Qingjun;Zhong, Zuliang;Chen, Qiang;Weng, Chengxian;Liu, Wenwu
    • Geomechanics and Engineering
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    • 제28권3호
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    • pp.265-281
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    • 2022
  • A set of slurry shield test system capable of cutter cutting and slurry automatic circulation is used to investigate the deformation characteristics, the evolution characteristics of support resistance and the distribution and evolution process of earth pressure during excavating and collapsing of slurry shield tunneling in circular-gravel layer. The influence of cover-span ratio on surface subsidence, support resistance and failure mode of excavation face is also discussed. Three-dimensional numerical calculations are performed to verify the reliability of the test results. The results show that, with the decrease of the supporting force of the excavation face, the surface subsidence goes through four stages: insensitivity, slow growth, rapid growth and stability. The influence of shield excavation on the axial earth pressure of the front soil is greater than that of the vertical earth pressure. When the support resistance of the excavation face decreases to the critical value, the soil in front of the excavation face collapses. The shape of the collapse is similar to that of a bucket. The ultimate support resistance increase with the increase of the cover-span ratio, however, the angle between the bottom of the collapsed body and the direction of the tunnel excavation axis when the excavation face is damaged increase first and then becomes stable. The surface settlement value and the range of settlement trough decrease with the increase of cover-span ratio. The numerical results are basically consistent with the model test results.

Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer

  • Madani Labed;Nouredine Sengouga;You Seung Rim
    • Nanomaterials
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    • 제12권5호
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    • pp.827-838
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    • 2022
  • Controlling the Schottky barrier height (φB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga2O3 semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (φB), from 1.32 to 0.43 eV, and in the series resistance (Rs), from 60.3 to 2.90 mΩ.cm2. However, the saturation current (Js) increased from 1.26×10-11 to 8.3×10-7(A/cm2). The effects of a graphene bandgap and workfunction were studied. With an increase in the graphene workfunction and bandgap, the Schottky barrier height and series resistance increased and the saturation current decreased. This behavior was related to the tunneling rate variations in the graphene layer. Therefore, control of Schottky barrier diode output parameters was achieved by monitoring the tunneling rate in the graphene layer (through the control of the bandgap) and by controlling the Schottky barrier height according to the Schottky-Mott role (through the control of the workfunction). Furthermore, a zero-bandgap and low-workfunction graphene layer behaves as an ohmic contact, which is in agreement with published results.

Characterization of the Vertical Position of the Trapped Charge in Charge-trap Flash Memory

  • Kim, Seunghyun;Kwon, Dae Woong;Lee, Sang-Ho;Park, Sang-Ku;Kim, Youngmin;Kim, Hyungmin;Kim, Young Goan;Cho, Seongjae;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권2호
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    • pp.167-173
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    • 2017
  • In this paper, the characterization of the vertical position of trapped charges in the charge-trap flash (CTF) memory is performed in the novel CTF memory cell with gate-all-around structure using technology computer-aided design (TCAD) simulation. In the CTF memories, injected charges are not stored in the conductive poly-crystalline silicon layer in the trapping layer such as silicon nitride. Thus, a reliable technique for exactly locating the trapped charges is required for making up an accurate macro-models for CTF memory cells. When a programming operation is performed initially, the injected charges are trapped near the interface between tunneling oxide and trapping nitride layers. However, as the program voltage gets higher and a larger threshold voltage shift is resulted, additional charges are trapped near the blocking oxide interface. Intrinsic properties of nitride including trap density and effective capture cross-sectional area substantially affect the position of charge centroid. By exactly locating the charge centroid from the charge distribution in programmed cells under various operation conditions, the relation between charge centroid and program operation condition is closely investigated.

Three-dimensional numerical parametric study of shape effects on multiple tunnel interactions

  • Chen, Li'ang;Pei, Weiwei;Yang, Yihong;Guo, Wanli
    • Geomechanics and Engineering
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    • 제31권3호
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    • pp.237-248
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    • 2022
  • Nowadays, more and more subway tunnels were planed and constructed underneath the ground of urban cities to relieve the congested traffic. Potential damage may occur in existing tunnel if the new tunnel is constructed too close. So far, previous studies mainly focused on the tunnel-tunnel interactions with circular shape. The difference between circular and horseshoe shaped tunnel in terms of deformation mechanism is not fully investigated. In this study, three-dimensional numerical parametric studies were carried out to explore the effect of different tunnel shapes on the complicated tunnel-tunnel interaction problem. Parameters considered include volume loss, tunnel stiffness and relative density. It is found that the value of volume loss play the most important role in the multi-tunnel interactions. For a typical condition in this study, the maximum invert settlement and gradient along longitudinal direction of horseshoe shaped tunnel was 50% and 96% larger than those in circular case, respectively. This is because of the larger vertical soil displacement underneath existing tunnel. Due to the discontinuous hoop axial stress in horseshoe shaped tunnel, significant shear stress was mobilized around the axillary angles. This resulted in substantial bending moment at the bottom plate and side walls of horseshoe shaped tunnel. Consequently, vertical elongation and horizontal compression in circular existing tunnel were 45% and 33% smaller than those in horseshoe case (at monitored section X/D = 0), which in latter case was mainly attributed to the bending induced deflection. The radial deformation stiffness of circular tunnel is more sensitive to the Young's modulus compared with horseshoe shaped tunnel. This is because of that circular tunnel resisted the radial deformation mainly by its hoop axial stress while horseshoe shaped tunnel do so mainly by its flexural rigidity. In addition, the reduction of soil stiffness beneath the circular tunnel was larger than that in horseshoe shaped tunnel at each level of relative density, indicating that large portion of tunneling effect were undertaken by the ground itself in circular tunnel case.

지하수 과다유입 조건하에서의 터널굴착 (Tunneling in Severe Groundwater Inflow Condition)

  • 이용남;김대영
    • 한국지반환경공학회 논문집
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    • 제7권2호
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    • pp.67-76
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    • 2006
  • 본 논문은 수직 절리가 잘 발달된 지하수위가 높은 화산암질 지반에서 직경 3.3m의 도수터널 굴착을 하는 수력발전소 건설공사 내용이다. 취수시설은 발전소로부터 20.3km 상류에 위치하고 있으며, 20km의 도수터널과 연결되어 있고 440m의 낙차고를 갖는 펜스탁이 발전소와 연결되어 있다. 현장의 지질 조건은 전형적인 칼데라 호수인 토바호에 의해 지반 침식과 수직방향의 인장균열이 발달하였으며 이로 인해 지반의 초기응력이 이완되었다. 높은 지하수위(최대 수두 200m)를 가진 잘 발달된 수직 절리를 터널이 관통하면서 막대한 양의 지하수가 터널내로 유입되었다. 터널 굴착은 개방형 쉴드 TBM과 버럭반출에는 철로와 기관차를 사용하였다. 터널 내로의 유입수가 터널 바닥면에서 70cm 높이에 다다르고 이는 터널 직경(3.9m)의 17%에 해당하였다. 생산성을 향상하기 위해서 TBM과 버럭반출 차량과 같은 몇 가지의 개선과 수중펌프를 증설하는 방안을 사용하였다. 굴착 중에 만난 지반 조건이 설계보다 상당히 불량하여 RC라이닝에서 지하수 유입, 암반조건, 수압 등에 따라 PC 세그먼트 라이닝 또는 PC 세그먼트 라이닝과 현장타설 RC 라이닝, RC 라이닝, 그리고 강재 라이닝이 적용되었다. 이 PC 세그먼트 라이닝의 도입과 TBM과 다른 장비의 개조 및 개선을 통해서 심각한 지하수 조건 하에서 터널 굴착 공사를 성공적으로 완료하였다.

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강관다단 그라우팅으로 보강된 터널의 막장 안정성 평가 (Evaluation of Face Stability of Tunnel with Steel Pipe-Reinforced Multi-step Grouting)

  • 이인모;이재성;남석우
    • 한국지반공학회:학술대회논문집
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    • 한국지반공학회 2003년도 봄 학술발표회 논문집
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    • pp.273-280
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    • 2003
  • Tunneling in difficult geological conditions is often inevitable especially in urban areas. Ground improvement and reinforcement techniques are often required to guarantee safe tunnel excavations and/or to prevent damage to adjacent structures. The steel pipe-reinforced multi-step grouting method has been recently applied to tunnel sites in Korea as an auxiliary technique. In this study, the face stability with steel pipe-reinforced multi-step grouting was evaluated by simultaneously considering two factors: one is the effective stress acting on the tunnel face calculated by limit theorem and limit equilibrium method; the other is the seepage force obtained by means of numerical analysis. The study revealed that the influence of the steel pipe-reinforced multi-step grouting on the support pressure in dry condition is not significant while there is relatively a large amount of reduction in seepage forces by adopting the technique in saturated condition. The effect of the anisotropy of permeability on the seepage force acting on the tunnel face was also estimated by conducting the coupled analysis. It was found that a higher horizontal permeability compared with the vertical one causes reduction in the seepage force acting on the tunnel face.

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Triple Material Surrounding Gate (TMSG) Nanoscale Tunnel FET-Analytical Modeling and Simulation

  • Vanitha, P.;Balamurugan, N.B.;Priya, G. Lakshmi
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권6호
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    • pp.585-593
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    • 2015
  • In the nanoscale regime, many multigate devices are explored to reduce their size further and to enhance their performance. In this paper, design of a novel device called, Triple Material Surrounding Gate Tunnel Field effect transistor (TMSGTFET) has been developed and proposed. The advantages of surrounding gate and tunnel FET are combined to form a new structure. The gate material surrounding the device is replaced by three gate materials of different work functions in order to curb the short channel effects. A 2-D analytical modeling of the surface potential, lateral electric field, vertical electric field and drain current of the device is done, and the results are discussed. A step up potential profile is obtained which screens the drain potential, thus reducing the drain control over the channel. This results in appreciable diminishing of short channel effects and hot carrier effects. The proposed model also shows improved ON current. The excellent device characteristics predicted by the model are validated using TCAD simulation, thus ensuring the accuracy of our model.