• 센서학회지
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• 제15권6호
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• pp.379-385
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• 2006

Single crystal of p-$CdIn_{2}Te_{4}$ was grown in a three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by x-ray diffraction and photoluminescence measurements. From the photoluminescence spectra of the as-grown $CdIn_{2}Te_{4}$ crystal and the various heat-treated crystals, the ($D^{o}$, X) emission was found to be the dominant intensity in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Cd, while the ($A^{o}$, X) emission completely disappeared in the $CdIn_{2}Te_{4}$:Cd. However, the ($A^{o}$, X) emission in the photoluminescence spectrum of the $CdIn_{2}Te_{4}$:Te was the dominant intensity like in the as-grown $CdIn_{2}Te_{4}$ crystal. These results indicated that the ($D^{o}$, X) is associated with $V_{Te}$ which acted as donor and that the ($A^{o}$, X) emission is related to $V_{Cd}$ which acted as acceptor, respectively. The p-$CdIn_{2}Te_{4}$ crystal was obviously found to be converted into n-type after annealing in Cd atmosphere. The origin of ($D^{o},{\;}A^{o}$) emission and its to phonon replicas is related to the interaction between donors such as $V_{Te}$ or $Cd_{int}$, and acceptors such as $V_{Cd}$ or $Te_{int}$. Also, the In in the $CdIn_{2}Te_{4}$ was confirmed not to form the native defects because it existed in a stable bonding form.

• 한국세라믹학회지
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• 제26권4호
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• pp.459-470
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• 1989

Single crystals of rare-earth iron garnets were grown from solutions of molten lead oxide, lead fluoride, baric oxide, iron oxide, and the oxides of yttrium, samarium orgadolinium. The crystals were grown by slow cooling technique. A convenient composition was 41.8mol% PbO, 20.59mol% PbF2, 8.23mol% B2O3, 20.00mol% Fe2O3 and 10.00mol% R2O3 where R is Y, Sm or Gd. For this experiment, platinum crucibles of size 20, 30cc and a vertical siliconit tube furnace were used. The precipitation temperature of YIG was observed in the range of 115$0^{\circ}C$-112$0^{\circ}C$ and the optimum growth conditions in this experiment were determined. The nucleation rate was controlled by the holding time after the fast colling, the growth rate by the slow cooling conditiions. The form of the grown YIG crystals showed a combination of {110} and {211}, and the size of the crystals grown in this experiment was up to about 9mm under the conditions of holding time 16hour, cooling rate 2$^{\circ}C$/hr. and temperature range 115$0^{\circ}C$-90$0^{\circ}C$. The precipitatin temperature of SmIG was observed in the range of 105$0^{\circ}C$-98$0^{\circ}C$ and the size of the crystals grown in this experiment was up to about 5mm under the conditiions of holding time 16hours, cooling rate 2$^{\circ}C$/hr. and temperature range 100$0^{\circ}C$-80$0^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.252.2-252.2
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• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

• 한국건설순환자원학회논문집
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• 제9권3호
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• pp.287-294
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• 2021

본 연구에서는 고로슬래그 미분말 등의 순환자원을 재활용하여 건설 현장에서 다양한 목적으로 사용되고 있는 지반안정재에 대해 매입말뚝용 주면고정액으로서의 활용 가능성을 분석하기 위한 연구를 수행하였다. 이를 위해 주면고정액의 일반적인 물/결합재비인 70%와 83%를 적용하여 시편을 제작하고, 압축강도, 주면마찰력, 내진 성능을 파악하기 위한 압축시험, 모형시험, 진동대 시험을 실시하였다. 시험결과. 순환자원을 재활용한 지반안정재의 경우, 국내 관련 기준에 제시된 압축강도 기준을 상회하고, 보통 포틀랜드 시멘트 대비 동등한 주면마찰력을 발휘하며, 지진으로 인한 발생 변위량도 국내 허용변위 기준에 비해 매우 작은 수준을 나타내었다. 따라서 시험결과를 종합적으로 고려할 때, 매입말뚝용 주면고정액으로서 순환자원을 재활용한 지반안정재의 활용 가능성은 충분한 것으로 판단된다.

• 대한금속재료학회지
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• 제49권1호
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• pp.79-84
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• 2011

Double-walled carbon nanotubes (DWCNTs) with high purity were produced by the catalytic decomposition of tetrahydrofuran (THF) using a Fe-Mo/MgO catalyst at $800^{\circ}C$. The as-synthesized DWCNTs typically have catalytic impurities and amorphous carbon, which were removed by a two-step purification process consisting of acid treatment and oxidation. In the acid treatment, metallic catalysts were removed in HCl at room temperature for 5 hr with magnetic stirring. Subsequently, the oxidation, using air at $380^{\circ}C$ for 5 hr in the a vertical-type furnace, was used to remove the amorphous carbon particles. The DWCNT suspension was prepared by dispersing the purified DWCNTs in the aqueous sodium dodecyl sulfate solution with horn-type sonication. This was then air-sprayed on ITO glass to fabricate DWCNT field emitters. The field emission properties of DWCNT films related to transmittance were studied. This study provides the possibility of the application of large-area transparent CNT field emission cathodes.

• 대한금속재료학회지
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• 제48권4호
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• pp.335-341
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• 2010

High-quality single-walled carbon nanotubes (SWCNTs) were synthesized by catalytic decomposition of $C_2H_2$ using Fe-Mo/MgO catalyst at $800^{\circ}C$. The as-synthesized SWCNTs typically occurred in the form of a bundle with a diameter of 10~20 nm together with amorphous carbon and catalytic impurities, which were removed by a two-step purification process consisting of oxidation and an acid treatment. The oxidation step, using an $O_2$-Ar mixture at $380^{\circ}C$ for 5 hr in a vertical-type furnace and a $HNO_3$ treatment at $100^{\circ}C$ for one hour, was utilized to remove the amorphous carbon particles. Subsequently, metallic catalysts were removed in HCl at room temperature for 5 hr under magnetic stirring. The SWCNT suspension was prepared by dispersing the purified SWCNTs in an aqueous sodium dodecyl benzene sulfonate solution with horn-type sonication. This was then air-sprayed on glass to fabricate CNT field emitters. The samples had a turn-on field value of 4 V/${\mu}m$ and a current density of 0.67 mA/$cm^2$ at 9 V/${\mu}m$. Increasing the HCl treatment time improved the field emission properties.

• 센서학회지
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• 제12권6호
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• pp.273-281
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• 2003

수평 전기로에서 $CdIn_2Te_4$ 다결정을 합성하여 Bridgeman 법으로 3단 수직 전기로에서 $CdIn_2Te_4$ 단결정을 성장하였다. 성장된 결정의 특성은 x선 회절과 광발광 측정으로 조사하였다. $CdIn_2Te_4$ 단결정 시료는 Laue에 배면 반사법에 의해서 (001)면으로 성장되었음을 확인하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 $8.61{\times}10^{16}/cm^3$, $242\;cm^2/V{\codt}s$였다. $CdIn_2Te_4$ 단결정의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni공식에 따라 계산한 결과 1.4750eV - $(7.69{\times}10^{-3}\;eV/K)T^2$/(T+2147 K)임을 확인하였다. 막 성장된(as-grown) $CdIn_2Te_4$ 단결정 시료를 Cd-, In-, Te 분위기에서 열처리하여 10K에서 Photoluminescence(PL) spectra를 측정하여 점 결함의 기원을 알아보았다. $CdIn_2Te_4$ 단결정내에서 내재된 결함들의 기원을 10 K에서 광발광을 측정하여 연구되었다. PL 측정으로 부터 얻어진 $V_{Te}$, $Cd_{int}$, $V_{Cd}$, 그리고 $Te_{int}$는 주개와 받개로 분류되어졌다. $CdIn_2Te_4$ 단결정 시료를 Cd 분위기에서 열처리하면 n형으로 변환됨을 악 수 있었고, In 분위기에서 열처리하면 열처리 이전의 PL spectra를 보이고 있어서 $I_2$, $I_1$ 및 S.A emission에 의한 PL peak에는 영향을 주지 않는다고 보았다.

• 한국결정성장학회지
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• 제8권4호
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• pp.532-538
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• 1998

한국산 천연베릴을 잉요하여 온도구배융제환류법에 의해 에메랄드($3BeO{\cdot}Al_2O_3{\cdot}6SiO_2:Cr^{3+}$) 단결정이 성장되었다. 리튬-몰리브데늄-바나디움 산화물계 융제는 $(MoO_3+V_2O_5)/Li_2O$, 와 $V_2O_5-Li_2O$를 서로 다르게 용융한 2종류의 융제를 혼합하여 제조하였다. 융제의 최적 조성은 산화몰리브데늄.바나디움에 대한 산화리튬의 몰비($(MoO_3+V_2O_5)/Li_2O$)가 3몰이었고 융제첨가제는 Li2O량에 대하여 $K_2O$ 또는 $Na_2O$를 0.2mole% 이내로 치환하였다. 베릴원료의 용융 농도는 융제량에 대하여 3~10% 함량이었고, $Cr_2O_3$ 발색제는 베릴량에 대하여 1%이었다. 융액은 용융, 성장, 회수 블록으로 나뉘어진 3지대 온도구배 결정성장로에서, $1100^{\circ}C$와 $1000^{\circ}C$ 사이의 안정상태에서 연속적으로 순환되도록 하였다. 에메랄드 단결정은 성장지대에서 950~$1000^{\circ}C$ 구간에서 1일 1회 2시간동안 열진동 처리하였을 때 미소핵의 생성이 억제된 대형 단결정을 성장시킬 수 있었다. 육각주상 에메랄드 단결정의 우선성장방향은 c(0001) 바닥면이었고, m(1010) 기둥면에 수직이었다.

• Journal of Radiation Protection and Research
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• 제41권2호
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• pp.167-171
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• 2016

Background: TlBr is of considerable technological importance for radiation detection applications where detecting high-energy photons such as X-rays and ${\gamma}$-rays are of prime importance. However, there were few reports on investigating optical properties of TlBr itself for deeper understandings of this material and for making better radiation detection devices. Thus, in this paper, we report on the optical characterizations of TlBr single crystals. Spectroscopic ellipsometry (SE) and photoluminescence (PL) measurements at RT were performed for this work. Materials and Methods: A 2-inch TlBr single crystalline ingot was grown by using the vertical Bridgman furnace. SE measurements were performed at RT within the photon energy range from 1.1 to 6.5 eV. PL measurements were performed at RT by using a home-made PL system equipped with a 266 nm-laser and a spectrometer. Results and Discussion: Dielectric responses from SE analysis were shown to be slightly different among the different samples possibly due to the different structural/optical properties. Also from the PL measurements, it was observed that the peak intensities of the middle samples were significantly higher than those of the other two samples. With the given values for permittivity of free space (${\varepsilon}_0=8.854{\times}10^{-12}F{\cdot}m^{-1}$), thickness (d = 1 mm), and area ($A=10{\times}10mm^2$) of the TlBr sample, capacitances of TlBr were 6.9 pF (at $h{\nu}=3eV$) and 4.4 pF (at $h{\nu}=6eV$), respectively. Conclusion: SE and PL measurement and analysis were performed to characterize TlBr samples from the optical perspective. It was observed that dielectric responses of different TlBr samples were slightly different due to the different material properties. PL measurements showed that the middle sample exhibited much stronger PL emission peaks due to the better material quality. From the SE analysis, optical, dielectric constants were extracted, and calculated capacitances were in the few pF range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.122-122
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• 2008

Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density increase, ${\Delta}D_{it}$, the gate leakage current, ${\Delta}I_G$. and the retention characteristics, in MONOS capacitors, becomes an important issue in terms of reliability. It is well known that tunnel oxide degradation is a result of the oxide and interfacial traps generation during FN (Fowler-Nordheim) stress [2]. Because the bias temperature stress causes an increase of both interfacial-traps and fixed oxide charge could be a factor, witch can degrade device reliability during the program and erase operation. However, few studies on NBTI/PBTI have been conducted on improving the reliability of MONOS devices. In this work, we investigate the effect of post-annealing gas on bias temperature instability (BTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density shift, ${\Delta}I_G$ retention characteristics, and the gate leakage current characteristics of MANOS capacitors. MANOS samples annealed at $950^{\circ}C$ for 30 s by a rapid thermal process were treated via additional annealing in a furnace, using annealing gases $N_2$ and $N_2-H_2$ (2 % hydrogen and 98 % nitrogen mixture gases) at $450^{\circ}C$ for 30 min. MANOS samples annealed in $N_2-H_2$ ambient had the lowest flat band voltage shift, ${\Delta}V_{FB}$ = 1.09/0.63 V at the program/erase state, and the good retention characteristics, 123/84 mV/decade at the program/erase state more than the sample annealed at $N_2$ ambient.