• Transactions of the Korean hydrogen and new energy society
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• v.20 no.4
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• pp.352-359
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• 2009

KEPRI is developing a Korean type coal-gasification system and the scale is 20 ton/day. Prior to this pilot plant, a 1 ton/day class gasification system will be used for pre-testing of several coal types. This paper introduces the configuration and design conditions of this 1 ton/day class system, presenting the gas/coal ratio, oxygen/coal ratio, cold gas efficiency, CFD analysis of gasifier, and others. The existing combustion furnace for residual oil was retrofitted as a coal gasifier and a vertical and down-flow type burner was manufactured. Ash removal is carried out through a water quencher and a scrubber following the quencher, and the sulfur is removed by adsorption in the activated carbon tower. The gas produced from the gasifier is burned at the flare stack. In this paper, the results of design conditions and initial operation conditions of I ton/day gasification system are compared together.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.283-286
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• 1999

Transparent conductive aluminum-doped ZnO(AZO) films Were prepared by a ultrasonic spray pyrolysis method at the substrate temperature below 23$0^{\circ}C$. A vertical type hot wall furnace was used as a reactor in the deposition system. Zinc acetate dissolved in methanol was selected as a precursor. The substrate temperature was varied from 18$0^{\circ}C$to 24$0^{\circ}C$. Aluminum (Al) was doped into ZnO films by incorporating anhydrous aluminum chloride (AlCl$_3$) in the zinc acetate solution. The proportion of the Al in the starting solution was varied from 0 wt % to 3.0 wt %. The crystallographic properties and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The resistivity of the films was measured by the Van der Pauw method, and the mobility and carrier concentration were obtained through the Hall effect measurements Transmittance was measured in the visible region. The effects of substrate temperature and aluminum content in the starling solution on the structural and electrical properties of the AZO films are discussed

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.215-222
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• 2009

Many concepts of external magnetic field applications in crystal growth processes have been developed to control melt convection, impurity content and growing interface shape. Especially, travelling magnetic fields (TMF) are of certain advantages. However, strong shielding effects appear when the TMF coils are placed outside the growth vessel. To achieve a solution of industrial relevance within the framework of the $KRISTMAG^{(R)}$ project inner heater-magnet modules(HMM) for simultaneous generation of temperature and magnetic field have been developed. At the same time, as the temperature is controlled as usual, e.g. by DC, the characteristics of the magnetic field can be adjusted via frequency, phase shift of the alternating current (AC) and by changing the amplitude via the AC/DC ratio. Global modelling and dummy measurements were used to optimize and validate the HMM configuration and process parameters. GaAs and Ge single crystals with improved parameters were grown in HMM-equipped industrial liquid encapsulated Czochralski (LEC) puller and commercial vertical gradient freeze (VGF) furnace, respectively. The vapour pressure controlled Czochralski (VCz) variant without boric oxide encapsulation was used to study the movement of floating particles by the TMF-driven vortices.

• Carbon letters
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• v.13 no.4
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• pp.191-204
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• 2012

Carbon nanotubes (CNTs) have exceptional mechanical, electrical, and thermal properties compared with those of commercialized high-performance fibers. For use in the form of fabrics that can maintain such properties, individual CNTs should be held together in fibers or made into yarns twisted out of the fibers. Typical methods that are used for such purposes include (a) surfactant-based coagulation spinning, which injects a polymeric binder between CNTs to form fibers; (b) liquid-crystalline spinning, which uses the nature of CNTs to form liquid crystals under certain conditions; (c) direct spinning, which can produce CNT fibers or yarns at the same time as synthesis by introducing a carbon source into a vertical furnace; and (d) forest spinning, which draws and twists CNTs grown vertically on a substrate. However, it is difficult for those CNT fibers to express the excellent properties of individual CNTs as they are. As solutions to this problem, post-treatment processes are under development for improving the production process of CNT fibers or enhancing their properties. This paper discusses the recent methods of fabricating CNT fibers and examines some post-treatment processes for property enhancement and their applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.208-212
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• 2008

This paper reports physical properties of in situ boron doped silicon films made from boron source gas and silane ($SiH_4$) gas in a conventional low-pressure chemical vapor deposition vertical furnace. If the p-type polysilicon is formed by boron implantation into undoped polysilicon, the plasma nitridation (PN) process is added on the oxide in order to suppress boron penetration that can be caused during the thermal treatments used in fabrication. In-situ boron doped polysilicon deposition can complete p-type polysilicon film with only one deposition process and need not the PN process, because there is not interdiffusion of dopant at the intermediate temperatures of the subsequent steps. Since in-situ boron doped polysilicon films have higher work function than that of n-type polysilicon and they are compatible with the underlying oxide, they may be promising materials for improving memory cell characteristics if we make its profit of these physical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.347-351
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• 2003

A p-$CdIn_2Te_4$ single crystal has been grown by the Bridgman method without a seed crystal in a tree-stage vertical electric furnace. From photocurrent measurements, it was found that three peaks, A, B, and C, corresponded to an intrinsic transition due to the band-to-band transition from the valence band states ${\Gamma}_7(A),\;{\Gamma}_6(B),\;and\;{\Gamma}_7(C)$ to the conduction band state ${\Gamma}_6$, respectively. Also, the valence band splitting of the $CdIn_2Te_4$ crystal has been confirmed by photocurrent spectroscopy. The crystal field splitting and the spin orbit splitting were obtained to be 0.2360 and 0.1119 eV, respectively. Also, the temperature dependence of the band gap energy of the $CdIn_2Te_4$ crystal has been driven as the following equation of $E_g(T)\;=E_g(0)\;-\;(9.43\;{\times}\;10^{-3})T^2/(2676\;+\;T)$. In this equation, the Eg(0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band state A, B, and C, respectively. The band gap energy of the p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.2
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• pp.94-97
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• 2017

A method of improving the anti-fouling characteristics of porcelain insulators was proposed in this study. Functional coating was performed as a method of reducing the surface contamination of the porcelain insulators. The functional coating was applied on a ceramic substrate, which has the same material as the porcelain insulators. After coating the ceramic substrate 2, 3, 4, and 5 times alternately in the horizontal and vertical directions, the surface characteristics according to the thickness of the coating film were analyzed. The optimal process was selected to coat the surfaces of the post insulators and long rod insulators, which are the representative porcelain insulators. After coating, heat treatment was performed for 1 hour at $200^{\circ}C$ in a furnace to secure the durability of the coating film. Compared to the uncoated insulators, the insulators with the functional coating showed significantly improved anti-fouling characteristics as well as excellent adhesion to the coated insulator surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.903-910
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• 1998

Ti:LiNbO$_3$ optical waveguides have been fabricated by Ti-diffusion in wet oxygen atmosphere. The fabrication conditions of furnace temperature, diffusion time and bubbler temperature were 105$0^{\circ}C$, 8 hours and 9$0^{\circ}C$, respectively and Ti thickness was varied from 700$\AA$ to 1500$\AA$. In this paper, the nearfield patterns, mode sizes (hirizontal/vertical) and insertion loss of waveguides were discussed at wavelength 1550 nm ad function of Ti thickness. With the planar waveguide, the effective index change and diffusion depth were calculated at 632.8nm using the prism coupling method. From these results, the best Ti thickness in our conditions seems like to by 1200$\AA$~1300$\AA$.

• Economic and Environmental Geology
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• v.25 no.2
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• pp.145-151
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• 1992

In order to study the optimum depth for the soil geochemical exploration in the area which is affected by agricultural activities and waste disposal of metal mine, the soil samples were sampled from the B layer of residual soil and vertical 7 layers up to 250 cm in the rice field and 3 layers up to 90 cm in the ordinary field. They were analyzed for Au, As, Cu, Pb and Zn by AAS, AAS-graphite furnace and ICP. To investigate the proper depth for the soil sampling in the contaminated area, the data were treated statistically by applying correlation coefficient, factor analysis and trend analysis. It is conclude that soil geochemical exploration method could be applied in the farm-land and a little contaminated area. The optimum depth of soil sampling is 60 cm in the ordinary field, and 150~200 cm in the rice field. Soil sampling in the area of a huge mine waste disposal is not recommendable. Plotting of geochemical map with factor scores as a input data shows a clear pattern compared with the map of indicater element such as As or Au. The second or third degree trend surface analysis is effective in inferring the continuity of vein in the area where the outcrop is invisible.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.180-181
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• 2006

CdSe single crystal was grown by sublimation method in the two-step vertical electric furnace. This CdSe single crustal had hexagonal structure whose lattice constants of $a_0$ and $c_0$ were measured $4.299\;{\AA}$ and $7.009\;{\AA}$ by extrapolation method, respectively. CdSe single crystal was n-type semiconductor values were measured from Hall data by Van der Pauw method in the room temperature. Mobility tends to increase in proportion to $T^{3/2}$ from 33K to 130K due to impurity scattering. but mobility tends to decrease in proprtion to $T^{-3/2}$ from 130K to 293K due to lattice scattering. CdSe thin film was made by electron beam evaporation technique had also hexagonal structure. The grain size of this thin film was grown to $1{\mu}m$ as a result of annealing in the vapor of Ar or Cd. Annealde CdSe thin film was n-type semiconductor whose carrier density had about $7{\times}10^{12}cm^{-3}$ and its mobility had about $1.6{\times}10^3cm^2/V$ sec at room temperature.