• 한국결정학회지
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• 제8권2호
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• pp.149-153
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• 1997

본 연구는 ZnO-Bi2O3-Co3O4-MnCo3-Cr2O3-Sb2O3를 기본 조성으로 하여 Sb2O3 첨가량(0-0.09mol%) 변화에 따른 grain size와 미세구조 특성을 고찰하고자 하였다. Sb2O3가 첨가되지 않은 조성은 이상 입자 성장에 의해 거대한 ZnO grain이 생성되었으며, Sb2O3를 첨가한 조성은 Zn7Sb2O12 spinel상 생성으로 입자 성장이 억제되어 이상입자 성장이 관찰되지 않았다. Sb2O3 첨가량 증가에 따라 ZnO grain size가 현격하게 감소하였으며 그 미세구조는 조밀하고 균일한 크기의 grain분포를 나타내었다.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1186-1191
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• 2004

ZnO varistor ceramics which were fabricated with variation of added of 0.5～1.0 mol% Co$_3$O$_4$, were sintered at 1150 $^{\circ}C$. In the specimen added 0.7 mol% Co$_3$O$_4$, sintered density was 6.03 g/㎤ and electrical properties were superior to any other compositions. The nonlinear coefficient a and clamping voltage ratio were 83 and 1.35, respectively. But, endurance surge current in the specimen added 0.5 mol% Co$_3$O$_4$ was 7000 A/$\textrm{cm}^2$, and deviation of varistor voltage was Δ-3.23 %. As P.C.T and T.C.T environmental test were succeed in all specimens, and deviation of varistor voltage in the specimen added 0.6 mol% Co$_3$O$_4$ was Δ-0.81 %. All specimens showed good leakage current property on the High Temperature Continuous Load Test(HTCLT) for 1000 hr at 85 $^{\circ}C$ and variation rate of the varistor voltage below Δ-2.0 %.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.190-197
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• 2002

In this thesis, ZnO varistors with various formulation, such as A∼E, were fabricated according to ceramic fabrication method. The microstructure, electrical properties, and surge characteristics of ZnO varistors were investigated according to ZnO varistors with various formulation. In the microstructure, A∼E\`s ZnO varistor ceramics sintered at 1130$\^{C}$ was consisted of ZnO grain(ZnO), spinel phase (Zn$\_$2.33/Sb$\_$0.67/O$\_$4/), Bi-rich phase(Bi$_2$O$_3$) and intergranuler phase, wholly. Lightning impulse residual voltage of A, B, C and E\`s ZnO varistors suited standard characteristics, below 12kV at current of 5kA. On the contrary, D\`s ZnO varistor exhibited high residual voltage as high reference voltage. In the accelerated aging test, leakage current and watt loss of B, C and D\`s ZnO varistors increases abruptly with stress time under the first a.c. stress(115$\^{C}$/3.213kV/300h). Consequently, C varistor exhibited a thermal run away. On the contrary, leakage current and watt loss of A and C\`s ZnO varistors which show low initial leakage current exhibited constant characteristics. After high current impulse test, A\`s ZnO varistor has broken the side of varistor but impulse current flowed. On the contrary, E\`s ZnO Varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After long duration impulse current test, E\`s ZnO varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After high current impulse test and long duration impulse current test, E\`s ZnO varistor exhibited very good characteristics which variation rate of residual voltage is 1.4% before and after test.

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.48-56
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• 1998

Pr\ulcornerO\ulcorner-based ZnO varistors were fabricated in the range of $Y_2$O$_3$additive content from 0.5 to 4.0mol%, and its microstructure and electrical properties were investigated. Yttrium was distributed nearly in the grain boundaries and the cluster phase formed at nodal point but more in cluster phase. The average grain size was decreased markedly from 34.9 to 8.6${\mu}{\textrm}{m}$ with increasing $Y_2$O$_3$additive content. It is believed that the decrease of grain size is attributed to the formation of cluster phase and the weakening of driving force for liquid sintering. As a result, $Y_2$O$_3$was acted as the inhibitor of the grain growth. With increasing $Y_2$O$_3$additive content, the varistor voltage, the activation energy, and the nonlinear exponent increased whereas the leakage current decreased, especially 4.0mol% $Y_2$O$_3$-added varistor exhibited very good I-V characteristics; nonlinear exponent 87.42 and leakage current 46.77nA. On the other hand, as $Y_2$O$_3$additive content increases, the varistor showed tendency of the salient decrease for donor concentration and the increase for barrier height. Conclusively, it is estimated that ZnO:Pr varistor compositions added more than 2.0mol% $Y_2$O$_3$are to be used to fabricate useful varistors.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.383-389
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• 2000

The relationship between the DC degradation characteristics of the ZnO varistor and the ambient sintering-process is investigated in this study. ZnO varistors made o matsuoka’s composition were fabricated by standard ceramic techniques. The ambient sintering-process is performed at the extraordinary electrical-furnace which is equipped with the vacuum system. Gases used in sintering process were oxygen nitrogen argon and air. Using XRD and SEM the phase and microstructure of samples were analyzed respectively. The conditions of DC degradation tests were conducted at 115$\pm$2$^{\circ}C$ for 13 h. Current-voltage analysis is used to determine nonlinear coefficients($\alpha$). Frequency analysis are performed to understand electrical properties as DC degradation test. From above analysis it is found that the ZnO varistor sintered in oxygen atmosphere showed superior properties at the DC degradation test and degradation phenomenon of ZnO varistor is caused by the change of electrical properties in grain boundary. These results are in accordance with Gupta’s degradation model.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.344-347
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• 2003

The varistor properties of the ZPCCT-based ceramics, which are composed of Zn-Pr-Co-Cr-Tb oxides, were investigated with $Tb_4O_7$ content in the range of $0.0{\sim}1.0\;mol%$. As $Tb_4O_7$ content is increased, the ZPCCT-based ceramics exhibited very high densification based on increasing density in the range of $5.73{\sim}5.84\;g/cm^3$. The varitor voltage($V_{1mA}$) and nonlinear exponent($\alpha$) was increased in the range of 280.9 to 751.8 and 29.8 to 44.4 with increasing $Tb_4O_7$ content, respectively. In particular, the maximum $\alpha$ of 44.4 was obtained from 1.0 mol% $Tb_4O_7$ and the, minimum leakage current($I_{\ell}$) of $1.0\;{\mu}A$ was obtained from 0.5 mol% $Tb_4O_7$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.319-320
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• 2006

In order to improve the ESD(Electrical Static Discharge) resistance of multilayer chip varistors, we have investigated ZnO-$Pr_6O_{11}$ based chip varistor by applying tape casting technology, whose fundamental component were ZnO : $Pr_6O_{11}$ :$Co_3O_4$: $Y_2O_3$: $Al_2O_3$=93.67: 2.53:2.53:1.25 : 0.015 (wt %). The effect of sintering condition on the multilayer chip varistors and electric properties was studied. The electrical properties and ESD resistance of multilayer chip varistor could be influenced the sintering temperature and condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.212-216
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• 2000

ZnO varistors for distribution surge arrester (18kV, 5kA) were developed and tested microstructure and electrical characteristics. Microstructure of ZnO varistor was consisted of ZnO grain, spinel phase and Bi-rich phase. Average grain size of ZnO varistor was $\mu\textrm{m}$ Reference voltage and lightning impulse residual voltage of ZnO varistor exhibited a good haracteristics above 5.5kV and below 11.56kV, respectively. Consequently, discharge capacity which is the most important characteristics of ZnO varistor for surge arrester exhibited excellent properties above 70kA at twice high-current impulse test. Moreover, variation rate of reference voltage and lightning impulse residual voltage showed below 5% and 2% after high-current impulse test, respectively. Leakage current and watt loss of ZnO varistor will not increase during accelerated aging test at stress condition, such as 3.213kV/$115^{\circ}C$/1000h.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.946-952
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• 2002

The electrical and dielectric characteristics of ZPCCY-based varistor ceramics were investigated in the sintering time range of 1∼3 h. Increasing sintering time deteriorated the nonlinearity, in which nonlinear exponent is decreased from 51.2 to 23.8 and leakage current is increased from 1.3 to 5.6 $\mu$A. As sintering time increases, the donor concentration was decreased in the range of (1.25∼l.73)$\times$10$\^$18/cm$\^$-3/ and the density of interface states is (3.64∼94.19)$\times$10$\^$12/cm$\^$-2/ with increasing sintering time. The increase in sintering time caused tan $\delta$ to increase in the range of 0.043 to 0.062 and relaxation time to increase in the range of 1.55 to 2.23 ㎲.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.821-823
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• 1988

The electrical properties of ZnO varistors fabricated by the second firing method were investigated. The nonlinear coefficient of ZnO varistor fabricated by this method is similar to that of commercial ZnO varistor. But the breakdown voltage is higher than that of commercial ZnO varistor. These results are attributed to grain boundary diffusion of $Bi_{2}O_{3}$ by second firing.