• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.362-369
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• 2001

The electrical properties of varistors consisting of Zn-Pr-Co-Cr-Er oxides were investigated in the Er$_2$O$_3$content range of 0.0 to 2.0 mol%. the varistors without Er$_2$O$_3$ exhibited a relatively low nonlinearity, which was 14.24 in the nonlinear exponent and 21.47 $\mu$A in the leakage current. However, the varistors with Er$_2$O$_3$ sintered at 1335$^{\circ}C$ for 1h exhibited very high nonlinear exponent of 70, in particular, reaching a maximum value of 78.05 in 2.0 mol% Er$_2$O$_3$, and those sintered at 1335$^{\circ}C$ for 2h exhibited the nonlinear exponent close to 50, in particular, reaching a maximum value of52.76 in 0.5 mol% Er$_2$O$_3$. The others except for 0.5 mol% Er$_2$O$_3$-added varistors exhibited very high instability resulting in a thermal runaway within a short time, even a weak DC stress. Increasing soaking time decreased the nonlinearity, but increased the stability. The varistors containing 0.5mol% Er$_2$O$_3$ sintered for 2h exhibited excellent stability, in which the variation rate of the varistor voltage and nonlinear exponent was -1.70% and -7.15%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$/115$^{\circ}C$/12h)+(0.90 V$_{1mA}$/12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/12h)+(0.95 V$_{1mA}$/15$0^{\circ}C$/12h).TEX>/12h).

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.808-814
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• 2001

The electrical properties and stabiltiy of Pr$_{6}$O$_{11}$ -based ZnO varistors, which are composed of ZnO-Pr$_{6}$O$_{11}$-Cr$_{2}$O$_{3}$-Er$_{2}$O$_{3}$ based ceramics, were investigated in the Er$_{2}$O$_{3}$ content range of 0.5 to 2.0 mol%. As Er$_{2}$O$_{3}$content is increased up to approximaterly 1.0mol%, the nonlinearity was decreased. Increasing Er$_{2}$O$_{3}$ content further caused the nonlinearity to increase. The varistors with 2.0 mol% Er$_{2}$O$_{3}$ exhibited a high nonlinearity, in which the nonlinear exponent is 47.41 and the leakage current is 1.82 $\mu$A. Furthermore, they showed a very excellent stability, in which the variation rates of the varistor voltage, the nonlinear exponent, and leakage current are -0.52%, -4.09%, and 152.75%, respectively, under DC accelerated aging stress, such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12h).2h).TEX>/12h).2h).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.551-554
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• 2000

The stability of $Pr_6$$O_{11}$-based ZnO varistors doped with $Y_2$$O_3$ was investigated under various d.c. stresses. The varistors were sintered at $1350^{\circ}C$ for 1h in the addition range of 0.0 to 4.0 mol% $Y_2$$O_3$. The varistors doped with $Y_2$$O_3$ exhibited much higher nonlinearity than that without $Y_2$$O_3$. In Particular, the varistors containing 0.5 mol% $Y_2$$O_3$ showed very excellent V-I characteristics, which the nonlinear exponent was 51.19 and the leakage current was 1.32 $\mu\textrm{A}$. And these varistors also showed an excellent stability, which the variation rate of the varistor voltage and the nonlinear exponent were -0.80% and -2.17%, respectively, under 4th d.c. stress, such as (0.80 $V_ {1mA}$/$90^{\circ}C$/12h)+(0.85 $V_{1mA}$/$115^{\circ}C$/12h)+(0.90 $V_{1mA}$/$120^{\circ}C$/12h)+(0.95 $V_{1mA}$/$125^{\circ}C$/12h). Consequently, since $Pr_ 6$$O_{11}$-based ZnO varistors doped with 0.5 mol% $Y_2$$O_3$ have an excellent stability as well as good nonlinearity, it is expected to be usefully used to develop the superior varistors in future.

• 한국전기전자재료학회논문지
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• 제15권8호
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• pp.664-670
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• 2002

The electrical characteristics of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Y_2O_3$(ZPCCY)-based varistors were investigated with $Y_2O_3$ content in the range of 0.0~4.0 mol%. As $Y_2O_3$ content is increased, the average grain size was markedly decreased in the range of 18.6~3.2 $\mu m$ and the density of the ceramic was decreased in the range of 5.53 ~3.74 $g/\textrm{cm}^3$. While, the varistor voltage was increased in the range of 39.4~748.1 V/mm and the nonlinear exponent was in the range of 4.5~51.2 with increasing $Y_2O_3$ content. The addition of $Y_2O_3$ greatly enhanced the nonlinear properties of varistors, compared with the varistor without $Y_2O_3$. In particular, the varistors with $Y_2O_3$content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 51.2 and the leakage current is 1.3 $\mu A$. The donor concentration and the density of interface states were decreased in the range of (4.19~0.14) $\times$10$^{18}$ /㎤ and (5.38~1.15)${\times}10^{18}/\textrm{cm}^3$, respectively, with increasing $Y_2O_3$ content.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.897-901
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• 2003

The microstructure and varistor characteristics of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Dy$_2$O$_3$(ZPCCD)-based ceramics were investigated with Dy$_2$O$_3$ content in the range of 0.0∼2.0 mol%. As Dy$_2$O$_3$ content is increased, the average grain size was decreased in the range of 18.6∼4.7 $\mu$m and the density was decreased in the range of 5.53∼4.34 g/cm$^3$. While, the varistor voltage was increased in the range of 39.4∼436.6 V/mm and the nonlinear exponent was in the range of 4.5-66.6 with increasing Dy$_2$O$_3$ content. The addition of Dy$_2$O$_3$ highly enhanced the nonlinear properties of varistors, compared with the ceramics without Dy$_2$O$_3$ Particularly, the ceramics with Dy$_2$O$_3$ content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 66.6 and the leakage current is 1.2 $\mu$A.A.A.

• Transactions on Electrical and Electronic Materials
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• 제13권5호
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• pp.262-265
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• 2012

The Microstructure and nonlinear electrical properties of the ZPCCYT (ZnO-$Pr_6O_{11}$-CoO-$Cr_2O_3$-$Y_2O_3$-$Tb_4O_7$) varistors were investigated for different amounts of $Tb_4O_7$. The addition of $Tb_4O_7$ has a significant effect on microstructure and electrical properties. Analysis of the microstructure indicated that the ceramics consisted of ZnO grain as a main phase and a few secondary phases as a mix of $Pr_6O_{11}$, $Y_2O_3$, and $Tb_4O_7$. As the amount of $Tb_4O_7$ increased, the sintered densities of pellets increased from $\rho$ = 5.70 to $5.78g/cm^3$ and the average grain size decreased from d = 4.8 to $3.6{\mu}m$. The increase in the amount of $Tb_4O_7$ increased from $E_B$ = 7,473 to 10,035 V/cm and from ${\alpha}$ = 39.7 to 52.2. In particular, it was found that the ceramics modified with 1.0 mol% in the amount of $Tb_4O_7$ are suited for the varistors for high voltage in the light of a high sintered density and a high voltage gradient.

• 한국재료학회지
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• 제29권10호
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• pp.586-591
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• 2019

This study describes the doping effect of $Yb_2O_3$ on microstructure, electrical and dielectric properties of $ZnO-V_2O_5-MnO_2-Nb_2O_5$ (ZVMN) ceramic semiconductors sintered at a temperature as low as $900^{\circ}C$. As the doping content of $Yb_2O_3$ increases, the ceramic density slightly increases from 5.50 to $5.54g/cm^3$; also, the average ZnO grain size is in the range of $5.3-5.6{\mu}m$. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of $Yb_2O_3$ is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% $Yb_2O_3$ reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of $2.46-7.41{\times}10^{17}cm^{-3}$ with increasing doping content of $Yb_2O_3$ and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of $Yb_2O_3$ reaches 0.1 mol%, whereas further doping increases it. The value of $tan{\delta}$ increases from 0.209 to 0.268 with the doping content of $Yb_2O_3$.

• E2M - 전기 전자와 첨단 소재
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• 제6권1호
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• pp.69-79
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• 1993

ZnO 바리스터는 전기전자 장치에 비이상적인 써어지 혹은 잡음신호가 침입하는 것을 막기위해서 폭넓게 사용되고 잇다. 많은 연구자들은 저전압 바리스터를 제조하기 위해서 요러가지 방법을 제시하였다. 그렇지만 그러한 방법들은 6V이하의 동작 전압을 갖는 바리스터를 제조하기는 어렵다. 본 연구에서는 새로운 3-성분 종입자법으로 제조한 바리스터의 전도특성을 보고하고자 한다. 온도범위 20-150.deg.C 및 전류 범위 $10^{-8}$~$10^{-1}$A/$cm^{2}$에서 관찰된 바리스터의 전도특성은 측정전류가 증가함에 따라서 다른 기구를 갖는 3개의 영역으로 구분되었다. 측정전류가 $10^{-3}$ A/$cm^{2}$이하인 경우에 오옴전도 혹은 누설전류 영역으로 해석 할 수 있었다. 측정 전류가 $10^{-3}$ A/$cm^{2}$ 부근에서는 이중 쇼트키 장벽에 의한 전도로 해석할 수 있었으며 또한 $10^{-3}$ A/$cm^{2}$ 이상의 전류 영역에서는 턴넬 전도 전류로 해석 할 수 있었다. 이상의 결과로 부터 3-성분 종입자법으로 저전압 바리스터를 제조하는 방법은 지금까지 보고된 어느 다른 방법보다도 우수하며 그 전도기구를 제시하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.419-422
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• 2001

The electrical properties of Pr$_{6}$O$_{11}$-based ZnO varistors composed of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Dy$_2$O$_3$- based ceramics were investigated with CoO content in the range of 0.5~5.0 mol%. As CoO content is increased, the average grain size and the density were increased in the range of 9.86~27.22 $\mu$m and in the range of 5.25-5.55 g/cm$^3$, respectively. The varistor voltage was decreased in the range of 235.32~86.01 V/mm due to the increase of average grain size with CoO content. The varistors doped with CoO in the rage of 1.0~2.0 mol% exhibited a high nonlinearity, in which is above 55 in the nonlinear exponent and below 1.5 $\mu$A in the leakage current. Increasing CoO content further greatly decreased the nonlinearity.ity.ity.

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.667-674
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• 2000

The stability of ZnO-Pr$_{6}$/O$_{11}$-CoO-Er$_{2}$/O$_3$based varistors was investigated with Er$_{2}$/O$_3$additive content of the range 0.0 to 2.0 mol%. All varistors sintered at 130$0^{\circ}C$ exhibited the thermal runaway within short times even under weak d.c. stress. As a result these varistors were completely degraded. On the contrary the stability of varistors sintered at 135$0^{\circ}C$ was far better than that of 130$0^{\circ}C$. In particular the varistors added with 0.5mol% Er$_{2}$/O$_3$ which the nonlinear exponent is 34.83 and the leakage current is 7.38 $mutextrm{A}$ showed a excellent stability which the variation rate of the varistors voltage the nonlinear coefficient and the leakage current is below 1%, 2%, and 3.5% respectively even under more severe d.c. stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$12h) Consequently it is estimated that the ZnO-0.5 mol% Pr$_{6}$/O sub 11/-1.0 mol% CoO-0.5 mol% Er$_{2}$/O sub 3/ based varistors will be used to develop the advanced Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Er$_{2}$/O$_{3}$ based varistors will be used to develop the advanced Pr$_{6}$/O$_{11}$-based ZnO varistors having the high performance and stability in future. future.ure. future.