• Title/Summary/Keyword: Varistor Voltage ($V_{1mA}$)

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Voltage Enhancement of ZnO Oxide Varistors for Various Y2O3 Doping Compositions

  • Yoon, Jung-Rag;Lee, Chang-Bae;Lee, Kyung-Min;Lee, Heun-Young;Lee, Serk-Won
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.5
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    • pp.152-155
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    • 2009
  • The microstructure and the electrical properties of a ZnO varistor, which was composed of a ZnO-$Bi_2O_3$-$Sb_2O_3$-CoO- $MnO_2$ -NiO-$Nd_2O_3$ system, were investigated at various $Y_2O_3$ addition concentrations. $Y_2O_3$ played a role in the inhibition of the grain growth. As the $Y_2O_3$ content increased, the average grain size decreased from $6.8{\mu}m$ to $4{\mu}m$, and the varistor voltage($V_{1mA}$) greatly increased from 275 to 400 V/mm. The nonlinearity coefficient ($\alpha$) decreased from 72 to 65 with increasing $Y_2O_3$ amount. On the other hand, the leakage current ($I_L$) increased from 0.2 to 0.9 ${\mu}A$. These results confirmed that doping the varistors with $Y_2O_3$ is a promising production route for production of a higher fine-grained varistor voltage ($V_{1mA}$) which can dramatically reduce the size of the varistors.

Electrical Properties of ZnO Varistors with Variation of Glass Addition (Glass 첨가량에 따른 ZnO 바리스터의 전기적 특성)

  • Cho, Hyun-Moo;Lee, Jong-Deok;Park, Sang-Man;Lee, Sung-Gap
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.9
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    • pp.815-820
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    • 2005
  • ZnO varistor ceramics were fabricated with variation of addition of glass-frit amount and the sintering temperature was $1100^{\circ}C$. The average grain sizes were showed increased from $8.6{\mu}m\;to\;10{\mu}m$, and varistor voltages were decreased from 506V to 460V by added amount of glass-frit. Nonlinear coefficient $\alpha$, of all were with increasing the amount of glass-frit more than 70, in case of added on $0.03wt\%$ glass-frit was 83. And leakage current were less than $1{\mu}A$ with applied at $82\%$ of varistor voltage. The clamping voltage ratio of the specimens added $0.03wt\%$ glass-frit was 1.41 at applied 25A $[8/20\;{\mu}s]$. In the specimen added $0.03wt\%$ glass-frit, endurance of surge current and deviation of varistor voltage were $6200A/cm^2,\;\Delta-1.67\%$, respectively and clamping voltage ratio was 2.33. In the Specimen added $0.03wt\%$ glass-frit were superior to any other compositions on High Temperature Load Test(HTLT) for 1000 hr at $85^{\circ}C$, and deviation of the varistor voltage were $\Delta-1.29\%$.

Electrical properties of the ZnO varistors with the amount of rare-earth metal oxide addition (희토류 금속 산화물 첨가에 따른 ZnO varistor의 전기적 특성)

  • Cho, Hyun-Moo;Lee, Jong-Deok;Park, Sang-Man
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.336-337
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    • 2005
  • ZnO varistor ceramics were fabricated as a function of the amount of $Y_2O_3$ addition and sintered at $1250^{\circ}C$ for 2 hour. The average grain size was decreased from 14.2 ${\mu}m$ to 8.3 ${\mu}m$ with the amount of $Y_2O_3$ addition, and varistor voltage was increased from 433 V to 563 V with $Y_2O_3$ addition. Nonlinear coefficient a of all specimens were increased with the amount of $Y_2O_3$ more than 67, in case of $Y_2O_3$ 0.01wt% addition showed the excellent results of 87. And leakage current was less than $1{\mu}A$ at 82% of varistor voltage. The clamping voltage ratio of the specimens added 0.01wt% $Y_2O_3$ was 1.41 at 25A [8/20${\mu}s$]. At the specimen 0.01wt% $Y_2O_3$ addition. endurance of surge current and deviation of varistor voltage were 5700A/$cm^2$ and $\Delta$-2.86%, respectively.

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Varistor Characteristics of ZPCCL-Based Ceramics Doped with $La_{2}o_{3}$ ($La_{2}o_{3}$가 첨가된 ZPCCL계 세라믹스의 바리스터 특성)

  • 정영철;류정선;남춘우
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.415-418
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    • 2001
  • The I-V characteristics and its stability of ZPCCL-based ceramic varistors doped with La$_2$O$_3$in the range of 0.0~4.0 mol% were investigated. The density of ceramics was increased in the range of 4.7~5.8 g/cm$^3$ with increasing La$_2$O$_3$content. As La$_2$O$_3$content is increased, the varistor voltage was decreased in the range of 503.49-9.42 V/mm up to 2.0 mol%, whereas increasing La$_2$O$_3$content further caused it to increase. The ZPCCL-based varistors were characterized by nonlinearity, in which the nonlinear exponent is in the range of 3.05~82.43 and leakage current is in the range of 0.24-100.22 $\mu$A. Among ZPCCL-based varistors, 0.5 mol% added-varistors exhibited an excellent nonlinearity, in which the nonlinear exponent is 82.43 and the leakage current is 0.24 $\mu$A. Furthermore, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent was -1.11% and -6.72%, respectively, under DC stress, such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$//12h) +(0.90 V$_{1mA}$12$0^{\circ}C$//12h)+(0.95 V$_{1mA}$1$25^{\circ}C$//12h)+(0.95 V$_{1mA}$15$0^{\circ}C$//12h). Consequently, it was estimated that ZPCCL-based ceramics will be applied to development of Pr$_{6}$O$_{11}$ based ZnO varistors having a high performance.e.rformance.e.

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DC Accelerated Aging Characteristics of Praseodymium-Based ZnO Varistors Doped with $Dy_2O_3$ ($Dy_2O_3$가 첨가된 프라세오디뮴계 ZnO 바리스터의 DC 가속열화특성)

  • Ryu, Jung-Sun;Jung, Young-Chul;Kim, Hyang-Suk;Nahm, Choon-Woo
    • Proceedings of the KIEE Conference
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    • 2001.11a
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    • pp.78-80
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    • 2001
  • DC accelerating aging characteristics of praseodymium-based ZnO varistors doped with $Dy_2O_3$ were investigated with sintering time. The varistor sintered for 1h exhibited the highest nonlinearity, with a nonlinear exponent of 66.61 and a leakage current of $1.16{\mu}A$, whereas they did not exhibit relatively high stability. The varistor sintered for 2h having nonlinear exponent of 54.81 and leakage current of $2.52{\mu}A$ showed very excellent stability, which the variation rates of varistor voltage, nonlinear exponent, and leakage current are -1.19%, -4.00%, and +75.79% for 2h, under DC accelerated aging stress, such as ($0.85\;V_{1mA}/115^{\circ}C$/24h)+($0.90\;V_{1mA}/120^{\circ}C$/24h)+($0.95\;V_{1mA}/125^{\circ}C$/24h)+($0.95\;V_{1mA}/150^{\circ}C$/24h).

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The Effect of Cobalt Oxide Addition on Electrical and Dielectic Stability of Zinc Oxide Varistors (코발트 산화물 첨가가 산화아연 바리스터의 전기적, 유전적 안정성에 미치는 영향)

  • Nahm Choon-Woo;Yoo Dae-Hoon
    • Korean Journal of Materials Research
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    • v.15 no.11
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    • pp.722-729
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    • 2005
  • The electrical and dielectric stability of zinc oxide-based varistors were investigated with the cobalt oxide contents in the range of $0.5\~5.0 mo\l%$. As cobalt oxide contents increased, the ceramic density increased in the range of $5.25\~5.55g/cm^3$ and the varistor voltage decreased in the range of $235.3\~86.0V$. The varistor with on addition of cobalt oxide $1.0 mol\%$ exhibited good nonlinearity. in which the nonlinear exponent is 66.6 and the leakage current is $1.2{\mu}A$. Furthermore, the varistors exhibited the highest electrical and dielectric stability, with $\%{\Delta}V_{1mA}=-1.9\%,\;\%{\Delta}{\alpha}=-10.5\%,\;\%{\Delta}I_L=+275.0\%,\;and\;\%{\Delta}tna{\delta}=+55.6\%$, under DC accelerated aging $0.95V_{1mA}/150^{\circ}C/24h$.

Electrical Properties of Multilayer Chip Varistors in the Response Surface Analysis (반응표면분석법에 의한 적층 칩 바리스터의 전기적 특성)

  • Yoon, Jung-Rag;Jeong, Tae-Seok;Choi, Keun-Mook;Lee, Seok-Weon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.6
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    • pp.496-501
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    • 2007
  • In order to enhance sintering characteristics on the $ZnO-Pr_6O_{11}$ based multilayer chip varistors (MLVs), a response surface analysis using central composite design method were carried out. As a result, varistor voltage($V_{1mA}$), nonlinear coefficient ($\alpha$), leakage current ($I_L$) and capacitance (C) were considered to be mainly affected by sintered temperature and holding time. MLVs sintered at $1200^{\circ}C$ and above $1200^{\circ}C$ revealed poor electrical characteristics, possibly due to the reaction between electrode materials(Pd) and $ZnO-Pr_6O_{11}$ based ceramics. On the sintering temperature range $1150{\sim}1175^{\circ}C$, nonlinear coefficient ($\alpha$) and leakage current ($I_L$) were shown to be $60{\sim}69$ and below $0.3{\mu}A$, respectively. In particular, MLVs sintered at $1175^{\circ}C$, 1.5 hr and $2^{\circ}C/hr$ (cooling speed) showed stable ESD(Electrical Static Discharge) characteristics under the condition of 10 times at 8 Kv with deviation varistor voltage, and deviation nonlinear coefficient were 0.3% and 0.33% (at positive), 0.55% (at negative), respectively.

Stability Of $ZnO-Pr_{6}O_{11}-CoO-Cr_{2}O_{3}-Y_{2}O_{3}$Based Varistors with Cooling Rate (냉각속도에 따른 $ZnO-Pr_{6}O_{11}-CoO-Cr_{2}O_{3}-Y_{2}O_{3}$계 바리스터의 안정성)

  • 류정선;정영철;김향숙;남춘우
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.410-414
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    • 2001
  • The microstructure, V-I characteristics, and stability of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Y$_2$O$_3$based vairstors were investigated with cooling rate in the range of 2~8$^{\circ}C$/min. The cooling rate relatively weakly affected the microstructure, and the varistor voltage and the leakage current in the V-I chracteristics. But the nonlinear exponent relatively strongly affected by cooling rate. And the cooling rate also greatly affected the stability for DC stress. In gross, the varistors cooled with 4$^{\circ}C$/min exhibited the highest performance in the densification, nonlinearity, and stability. Especially, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent is -1.44% and -4.85%, respectively, under more severe DC stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12 h)+(0.85 V$_{1mA}$115$^{\circ}C$/12 h)\`(0.90 V$_{1mA}$12$0^{\circ}C$/12 h)+(0.95 V$_{1mA}$1$25^{\circ}C$/12 h)+(0.95 V$_{1mA}$15$0^{\circ}C$/12 h). It should be emphasized that the stability of these varistors is much superior to that of others.s.of others.s.

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The Characteristics on the Accelerated Degradation of Bi-based Varistor fabricated with ZnO Nano-powder (ZnO 나노파우더로 제조된 Bi계 바리스터의 가속열화 특성)

  • Wang, Min-Sung;Wang, Zengmei;Lee, Dong-Gyu;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.203-204
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    • 2006
  • Nano-Varistors fabricated with ZnO 30nm and 80nm powders were studied about the electrical characteristics with AC accelerated degradation in this paper Especially, ZnO nano-powder varistors were sintered m air at $1050^{\circ}C$ and analyzed the phenomenons of before and after AC degradation test. The stress conditions of AC degradation test were $1.0V_{1mA}$ $115{\pm}2^{\circ}C$ for 24h. 80nm-varistor was exhibited better performance than 30nm-varistor m the electrical stabilities. And then 80nm-varistor resulted m the degradation characteristics that the variation rate of operating voltage, nonlinear coefficient and leakage current was -0 3%, -0 4% and -3 3%, respectively.

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Effect of Sintering Temperature on Electrical Stability of $Pr_{6}O_{11}$-Based ZnO Varistors ($Pr_{6}O_{11}$계 ZnO 바리스터의 전기적 안정성에 소결온도의 영향)

  • 남춘우;류정선
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.8
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    • pp.640-646
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    • 2001
  • The electrical stability for DC stress of Pr$_{6}$O$_{11}$-based ZnO varistos consisting of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Er$_2$O$_3$-based ceramics were investigated with sintering temperature in the range of 1325~1345$^{\circ}C$. A the sintering temperature is raised, the nonlinear exponent of varistors was decreased, whereas the stability was markedly improved. The density of ceramics was found to greatly affect the electrical stability for DC stress. The varistors sintered at 13$25^{\circ}C$ were completely degraded because of thermal runaway attributing to low density. The varistors sintered at 1335$^{\circ}C$ exhibited the highest nonlinearity, with a nonlinear exponent of 70.53 and a leakage current of 1.92$\mu$A, whereas they did not exhibit relatively high stability. On the contrary, the varistors sintered at >134$0^{\circ}C$ exhibited not only a high nonlinearity marking the nonlinear exponent above 50 and the leakage current below 3$\mu$A, but also a high stability marking the variation rate of the varistor voltage below 2%, even under DC stress such as (0.80V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85V$_{1mA}$/115$^{\circ}C$/12h)+(0.90V$_{1mA}$/12$0^{\circ}C$/12h)+(0.95V$_{1mA}$/1$25^{\circ}C$/12h)+(0.95V$_{1mA}$/15$0^{\circ}C$/12h). In particular, ti was found that the varistors sintered at 134$0^{\circ}C$ were more nonlinear and more stable, compared with that of 1345$^{\circ}C$.EX>.}C$.EX>.

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