• Title/Summary/Keyword: Variable transmittance rate

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Calculation Method for the Transmitted Solar Irradiance Using the Total Horizontal Irradiance (수평면 전일사를 이용한 창 투과 일사량 계산 방법)

  • Jeon, Byung-Ki;Lee, Seung-Eun;Kim, Eui-Jong
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.29 no.4
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    • pp.159-166
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    • 2017
  • The growing global interest in energy saving is particularly evident in the building sector. The transmitted solar irradiance is an important input in the prediction of the building-energy load, but it is a value that is difficult to measure. In this paper, a calculation method, for which the total horizontal irradiance that can be easily measured is employed, for the measurement of the transmitted solar irradiance through windows is proposed. The method includes a direct and diffuse split model and a variable-transmittance model. The results of the proposed calculation model are compared with the TRNSYS-simulation results at each stage for the purpose of validation. The final results show that the CVRMSE over the year between the proposed model and the reference is less than 30 %, whereby the ASHRAE guideline was achieved.

The Electrical and Optical Characteristics of ATO Films Prepared by RF Magnetron Sputtering Method (RF 마그네트론 스퍼트링법에 의해 제조된 ATO 박막의 전기적 및 광학적 특성)

  • Kang, Sung Soo;Lee, Sung Ho;Jang, Yoon Seok;Park, Sang Chul
    • Journal of Korean Ophthalmic Optics Society
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    • v.15 no.4
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    • pp.299-305
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    • 2010
  • Purposes: The purposes of this study were to investigate the optical, structural and electrical properties of the antimony doped tin oxide(ATO) thin films according to certain variable deposition conditions, such as RF input power and T-S (target-substrate) distance change, using transparent conducting oxide (TCO). Methods: ATO thin films of Sb concentration ratio with $SnO_2:Sb_2O_5$ = 95:5 wt% were deposited at room temperature by RF magnetron sputtering method. Results: ATO thin films were most sensitive to the RF input power: light transmittance was 78% at RF input power of 30W, and 0.56 nm for the surface roughness and 1007 $\Omega{\cdot}cm^{-2}$ for the sheet resistance as well. Conclusions: It was found that ATO thin films were showed the large change in its characteristics of structural, optical and electrical properties which were affected by T-S distance and RF input power.