• 전력전자학회:학술대회논문집
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• 전력전자학회 2005년도 전력전자학술대회 논문집
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• pp.774-777
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• 2005

In this paper, a constant frequency phase shifting PWM controlled voltage source full bridge-type series load resonant high-frequency inverter using the IGBT power modules is presented for innovative consumer electromagnetic induction heating applications such as a hot water producer, steamer and super heated steamer. The full bridge arm side link passive quasi-resonant capacitor snubbers in parallel with the each power semiconductor device and high frequency AC load side linked active edge inductive snubber-assisted series load resonant tank soft switching inverter with a constant frequency phase shifted PWM control scheme is discussed and evaluated on the basis of the simulation and experimental results. It is proved from a practical point of view that the series load resonant and edge resonant hybrid high-frequency soft switching PWM inverter topology, what is called class DE type. including the variable-power variable-frequency(VPVF) regulation function can expand zero voltage soft switching commutation range even under low output power setting ranges, which is more suitable and acceptable for induction heated dual packs fluid heater developed newly for consumer power utilizations. Furthermore, even in the lower output power regulation mode of this high-frequency load resonant tank high frequency inverter circuit it is verified that this inverter can achieve ZVS with the aid of the single auxiliary inductor snubber.

• 대한전자공학회논문지SD
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• 제44권7호통권361호
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• pp.54-61
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• 2007

병렬 피드백을 이용하여 이득을 조절할 수 있는 저잡음 증폭기가 설계되었다. 설계된 저잡음 증폭기는 0.18um CMOS 공정으로 설계되었으며, 병렬 피드백은 커플링 캐패시터와 이득 제어 트랜지스터로 구성되어있다. 제안된 이득 제어 방법은 병렬 피드백에 연결된 이득 제어 트랜지스터의 채널 저항을 이용하였다. 측정 결과 $12\;dB{\sim}26.5\;dB$까지 총 38.5 dB의 이득 제어 범위를 가지고 있으며, 측정된 잡음지수는 약 4 dB이다. 소비 전력은 약 13.5mW였다. 측정된 잡음 지수의 경우 시뮬레이션과는 다르게 일반적인 저잡음 증폭기보다 높게 나타났지만, 다른 유사한 기술에 비해 훨씬 큰 동작 범위를 가지는 저잡음 증폭기가 구현하였다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2010년도 춘계학술대회
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• pp.490-492
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• 2010

Center-tapped termination을 가진 stub series-termination logic (SSTL) 채널을 지원하기 위한 전압모드 송신단을 제안한다. 제안하는 송신단은 진단 모드를 지원하고 신호보전성을 향상시키기 위해 출력레벨 조절수단을 가지며, 가변 병렬 터미네이션을 사용하여 swing level을 조절하는 동안 송신단의 출력 저항을 일정하게 유지시켜준다. 또한 제안하는 송신단의 off-chip 저항은 기생 캐패시터, 인덕터에 의한 termination의 임피던스 부정합을 줄여준다. 제안된 송신단을 검증하기 위해서 $50{\Omega}$의 출력저항을 유지하면서 8-레벨의 출력을 제공하는 전압모드 송신단을 1.5V의 70nm 1-poly 3-metal DRAM공정을 이용하여 구현하였다. 수신단 termination이 존재하지 않는 SSTL 채널에서 제안하는출력레벨 조절이 가능한 송신단을 이용함으로 1.6-Gb/s에서 54%의 jitter 감소가 측정되었다.

• Journal of Power Electronics
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• 제14권2호
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• pp.292-301
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• 2014

This paper presents a new configuration for a three-phase multilevel voltage source inverter. The main bridge is built from a classical three-phase two-level inverter and three bidirectional switches. A variable DC-link employing two unequal DC voltage supplies and four switches is connected to the main circuit in such a way that the proposed inverter produces four levels in the output voltage waveform. In order to obtain the desired switching gate signals, the fundamental frequency staircase modulation technique is successfully implemented. Furthermore, the proposed structure is extended and compared with other types of multilevel inverter topologies. The comparison shows that the proposed inverter requires a smaller number of power components. For a given number of voltage steps N, the proposed inverter requires N/2 DC voltage supplies and N+12 switches connected with N+7 gate driver circuits, while diode clamped or flying capacitor inverters require N-1 DC voltage supplies and 6(N-1) switches connected with 6(N-1) gate driver circuits. A prototype of the introduced configuration has been manufactured and the obtained simulation and experimental results ensure the feasibility of the proposed topology and the validity of the implemented modulation technique.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.15-17
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• 2005

In this study, tunable dielectric materials are important for resonator, variable capacitor, phased array antenna and other devices application. In this paper, Dielectric constant increased and tuning range increased with the increased of $BaSrTiO_3/Li_{2}CO_{3}$ content, which probably can be explained by the substitution of Ba3+, Li1+ on BaTiO3 lattice. The tunability and dielectric loss of the $BaSrTiO_2/Li_{2}CO_{3}$ thick film, sintered at $1150^{\circ}C$, were about 43 % and 0.234 at 10$\sim$15 MHz, respectively. In case of BaSrTi/MgO, Dielectric constant decreased and tenability increased with the added of $BaSrTiO_3/MgO$. The ferroelectrics properties were distinct when adding Li to BST ceramic thick film, and paraelectrics pattern was distinct when adding Mg.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.55-58
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• 2001

In this paper, we present the results of the design and fabrication of the VCO(Voltage controlled Oscillator) using RF circuit simulator GENESYS and electromagnetic field simulator EMpower Frequency range is fabricated VCO is 850 MHz ~ 950 MHz, which is used Colpitts Circuit. the fabricated VCO is consisted of resonator, oscillator and MSL(Microstrip Line) is used in LC tuning circuit.(operated by negative feedback) MSL(Microstrip Line), Varactor(Plastic package), low noise TR(SOT-23), chip inductor(1608), chip capacitor(1005), chip resistance(1005). 1005 type is used for sample fabrication of VCO. In the fabrication process, circuit pattern is screen printed on the alumina substrates of over 99.9% purity. Center frequency of the sample VCO is 850MHz at $V_T=1.5V$, while the simulated value was 1.0GHz at $V_T=1.5V$. Variable frequency range of the sample is 860~950MHz in contrast to the 1068~1100MHz of the simulated values.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.153-156
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• 2001

In this paper, we present the results of the design and fabrication of the VCO(Voltage controlled Oscillator) using RF circuit simulator GENESYS and electromagnetic field simulator EMpower Frequency range is fabricated VCO is 850 MHz ~ 950 MHz, which is used Colpitts Circuit. the fabricated VCO is consisted of resonator, oscillator and MSL(Microstrip Line) is used in LC tuning circuit.(operated by negative feedback) MSL(Microstrip Line), Varactor(Plastic package), low noise TR(SOT-23), chip inductor(1608), chip capacitor(1005), chip resistance(1005). 1005 type is used for sample fabrication of VCO. In the fabrication process, circuit pattern is screen printed on the alumina substrates of over 99.9% purity. Center frequency of the sample VCO is 850MHz at $V_T$=1.5V, while the simulated value was 1.0GHz at $V_T$=1.5V. Variable frequency range of the sample is 860~950MHz in contrast to the 1068~1100MHz of the simulated values.

• Journal of Electrical Engineering and information Science
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• 제2권6호
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• pp.202-207
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• 1997

Design and fabrication issues for an L-band GaAs Monolithic Microwave Integrated Circuit(MMIC) Voltage Controlled Oscillator(VCO) as a component of Personal Communications Systems(PCS) Radio Frequency(RF) transceiver are discussed. An ion-implanted GaAs MESFET tailored toward low current and low noise with 0.5mm gate length and 300mm gate width has been used as an active device, while an FET with the drain shorted to the source has been used as the voltage variable capacitor. The principal design was based on a self-biased FET with capacitive feedback. A tuning range of 140MHz and 58MHz has been obtained by 3V change for a 600mm and a 300mm devices, respectively. The oscillator output power was 6.5dBm wth 14mA DC current supply at 3.6V. The phase noise without any buffer or PLL was 93dB/1Hz at 100KHz offset. Harmonic balance analysis was used for the non-linear simulation after a linear simulation. All layout induced parasitics were incorporated into the simulation with EEFET2 non-linear FET model. The fabricated circuits were measured using a coplanar-type probe for bare chips and test jigs with ceramic packages.

• 전기학회논문지
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• 제66권7호
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• pp.1059-1065
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• 2017

In this paper, the energy harvester with a piezoelectric materials is modeled as the electric equivalent circuit, and performances of a standard DC method and a Parallel-SSHI method are verified through experiment under variable force and load conditions. Piezoelectric generator consists of mass, damper and spring constant, and it is modeled by electrical equivalent circuit with RLC components. Standard DC and Parallel-SSHI are used as power conversion methods, and standard DC consists of full-bridge rectifier and smoothing capacitor. Parallel-SSHI method is composed of L-C resonant circuit, zero-crossing detector and full-bridge rectifier. In case of simulation under $100k{\Omega}$ load condition, the harvested power is $500{\mu}W$ in Standard DC and $670{\mu}W$ in Parallel-SSHI, respectively. In experiment, the harvested power under $100k{\Omega}$ load condition is $420{\mu}W$ in standard DC and $602{\mu}W$ in Parallel-SSHI. Harvested power of Parallel-SSHI is improved by approximately 40% more than that of standard DC method.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2013-2015
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• 2005

In this paper, Effect of $BaSrTiO_3/Li_2CO_3$ on low temperature sintering and dielectric property of thick films has been investigated for variable capacitor on high frequency. The thick films were fabricated by the tape casting and then the structural and dielectric properties as a function of an addition composition ratio and sintering temperature were studied. For the thick film sintered at $1050^{\circ}C$, it was densified to 96% of $BaSrTiO_3$ theoretical density by the addition of 10 $wt{\cdot}%$ $BaSrTiO_3/Li_2CO_3$. Dielectric constant increased and Curie temperature lowered with the increased of $BaSrTiO_3/Li_2CO_3$ content, which probably can be explained by the substitution of $Ba^{3+},Li^{1+}$ on $RaTiO_3$ lattice. The tunability and dielectric loss of the $BaSrTiO_3/Li_2CO_3$ thick film, sintered at $1350^{\circ}C$, were about 26% and 0.234 at $10{\sim}15MHz$, respectively.