• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.478-485
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• 2007

In this paper, an unequal 1:N Wilkinson power divider with adjustable dividing ratio is proposed. The proposed unequal power divider is composed of basic Wilkinson structure. It consists of rectangular-shaped defected ground structure (DGS), isolated island pattern in DGS, and varactor diodes of which capacitance depends on bias voltage. The characteristic impedance value of microstrip line having DGS goes up and down by controlling bias voltage for diodes, and consequently the power dividing ratio(N) is adjusted. The obtained N from measurement is $2.59{\sim}10.4$ which mean the proposed divider has adjustable unequal dividing ratio.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.715-723
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• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

• Journal of Navigation and Port Research
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• v.30 no.10 s.116
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• pp.847-853
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• 2006

In this paper, we designed VCO(voltage controlled oscillator} that is composed of a dielectric resonator and a varactor diode, and the PLDRO(phase locked dielectric resonator oscillator) that is combined with the sampling phase detector and loop filter. The results at 12.05 GHz show the output power is 13.54 dBm frequency tuning range approximately +/- 7.5 MHz, and power variation over the tuning range less than 0.2 dB, respectively. The phase noise which effects on bits error rate in digital communication is obtained with -114.5 dBc/Hz at 100 kHz offset from carrier, and The second harmonic suppression is less than -41.49 dBc. These measured results are found to be more improved than those of VCO without adopting PLL, and the phase noise and power variation performance characteristics show the better performances than those of conventional PLL.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1104-1112
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• 2013

This paper presents a wideband Colpitts voltage controlled oscillator(VCO) with nanosecond startup time and a center frequency of 8.35 GHz for a new bubble-type motion detector that has a bubble-layer detection zone at the specific distance from itself. The VCO circuit consists of two parts; one is a negative resistance part with a HEMT device and Colpitts feedback structure and the other is a resonator part with a varactor diode and shorted shunt microstrip line. The shorted shunt microstrip line and series capacitor are utilized to compensate for the input reactance of the packaged HEMT that changes from capacitive values to inductive values at 8.1 GHz due to parasitic package inductance. By tuning the feedback capacitors which determine negative resistance values, this paper also investigates startup time improvement with the negative resistance variation and tuning bandwidth improvement with the reactance slope variation of the negative resistance part. The VCO measurement shows the tuning bandwidth of 2.3 GHz(28 %), the output power of 4.1~7.5 dBm and the startup time of less than 2 nsec.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.3 s.333
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• pp.25-32
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• 2005

In this papers, we first, therefore, designed VCO(voltage controlled oscillator) that is composed of the dielectric resonator and the varactor diode, and then designed and fabricated PLDRO(phase locked dielectric resonator oscillator) that is combined with the sampling phase detector and loop filter. The measured results of the fabricated PLDRO at 12.05 [GHz] show the output power is 13.54 [dBm], frequency tuning range approximately +/- 7.5 [MHz], and Power variation over the tuning range less than 0.2 [dB], respectively. The phase noise which effects on bits error rate in digital communication is obtained with -114.5 [dBc/Hz] at 100 [KHz] offset from carrier, and The second harmonic suppression is less than -41.49 [dBc]. These measured results are found to be more improved than those of VCO without adopting PLL, and the phase noise and power variation performance characteristics show the better performances than those of conventional PLL.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.12
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• pp.1375-1382
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• 2008

Frequency adjustable D-CRLH(dual-composite right/left handed) transmission lines, which solve the problem of design complexity and uncontrolled frequency of the existing structures, are proposed in this paper. The first design(type I), consisting of defected ground structure(DGS), island pattern in DGS, fixed stub and varactor diodes, controls $C_L$ in the parallel resonant circuit, while the second structure(type 2) composed of fixed DGS, shunt stub and diode adjusts $C_R$ in the series resonant circuit. The dual band frequency points which correspond to the meaningful electrical length of +/-90 degree in the RH/LH region are adjustable according to the bias voltage. The measurement shows that the LH frequency point which has -90 degree of electrical length are adjusted over $4.22{\sim}5.39\;GHz$ and $4.21{\sim}5.05\;GHz$ for type 1 and type 2, respectively, under $1{\sim}12\;V$ of bias voltage. In addition, the frequency Woo where RH turns over LH is controled over $3.26{\sim}4.22\;GHz$ for type 2 with the same bias condition.