• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2579-2581
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• 2001

넓은 가변 범위를 가지는 LC 탱크 전압 제어 발진기에 관해 본 논문에서 소개하고자 한다. LC 탱크 전압 제어 발진기의 발진을 소멸시키는 밀러 증폭기의 ESR을 제거함으로써 넓은 가변 범위를 얻을 수 있다. LC 탱크 전압 제어 발진기는 발진기 코어와 버퍼, 밴드갭(bandgap) 기준 전압 발생기 그리고 드라이브 증폭기로 구성되어 있다. 발진기 코어는 1.3mA의 전류를 소모하고 약 1GHz의 가변 범위를 가진다. 출력주파수의 가변 범위내에 발진기의 출력 전력은 3dBm 이내로 변한다. 이러한 LC 탱크 전압 제어 발진기는 BiCMOS 공정을 이용하여 제작되었고 2.7V 단일 전원에서 31.5mW의 전력을 소모한다.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.264-265
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• 2007

In this paper, we deal with a hybrid dual band low noise amplifier with tunable matching circuits for a Radio Frequency Identification(RFID) reader operating at 433MHz and 912MHz. The tunable matching circuit consists of the microstrip line, SMD component and varactor. Simulation results show that the S21 parameter is 17dB and 7.91dB at 433MHz and 912MHz, respectively. The noise figure is also determined to 3.56dB and 5.58dB at the same frequencies with a power consumption of 19.36mW.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.6
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• pp.63-69
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• 2008

Reconfigurable RF one-chip solutions have been researched with the objective of designing for smaller-sized and more economical RF transceiver and it can be applied to a vehicular wireless terminal. The proposed voltage-controlled oscillator satisfies the targeted frequency range ($4.2{\sim}5.4\;GHz$) and the frequency planning which correspond to the standards such as CDMA(IS-95), PCS, GSM850, EGSM, WCDMA, WLAN, Bluetooth, WiBro, S-DMB, DSRC, GPS, and DVB-H/DMB-H/L(L Band). In order to improve phase noise performance, PMOS is adopted in the cross-coupled pair, the tail current source and MOS varactor in this VCO and differential-typed switching is proposed in capacitor array. Based on the measurement results, a total power dissipation is $5.3{\sim}6.0\;mW$ at 1.8 V power supply voltage. The oscillator is tuned from 4.05 to 5.62 GHz; The tuning range is 33%. The phase noise is -117.16 dBc/Hz at 1 MHz offset frequency and the FOM (Figure Of Merit) is $-180.84{\sim}-180.5$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.219-232
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• 2013

This paper presents a microstrip antenna which recovers its resonant frequency and impedance shifted automatically by the approach of other objects such as hands. This can be used for telemetry sensor applications in the ultrahigh frequency(UHF) industrial, scientific, and medical(ISM) band. It is the key element that an frequency-reconfigurable antenna could be electrically controlled. This antenna is miniaturized by loading the folded plates at both radiating edges, and varactor diodes are installed between the radiating edges and the ground plane to control the resonant frequency by adjusting the DC bias asymmetrically. Using this voltage-controlled antenna and the micro controller peripheral circuits of reading the returned level, the antenna is designed and fabricated which recovers its resonant frequency and impedance automatically. Designed frequency auto recovering antenna is conformed to be recovered within a few seconds when the resonant frequency and impedance are shifted by the approach of other objects such as hand, metal plate, dielectric and so on.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.117-124
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• 2009

This paper describes a 3 to 5 GHz frequency synthesizer for MB-OFDM (Multi-Band OFDM) UWB (Ultra- Wideband) application using 0.13 ${\mu}m$ CMOS process. The frequency synthesizer operates in the band group 1 whose center frequencies are 3432 MHz 3960 MHz, and 4488 MHz. To cover the overall frequencies of group 1, an efficient frequency planning minimizing a number of blocks and the power consumption are proposed. And, a high-frequency VCO and LO Mixer architecture are also presented in this paper. A new mixed coarse tuning scheme that utilizes the MIM capacitance, the varactor arrays, and the DAC is proposed to expand the VCO tuning range. The frequency synthesizer can also provide the clock for the ADC in baseband modem. So, the PLL for the ADC in the baseband modem can be removed with this frequency synthesizer. The single PLL and two SSB-mixers consume 60 mW from a 1.2 sV supply. The VCO tuning range is 1.2 GHz. The simulated phase noise of the VCO is -112 dBc/Hz at 1 MHz offset. The die area is 2 ${\times}$ 2mm$^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.5 s.96
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• pp.482-487
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• 2005

In this paper, we propose the control method of output impedance of each cascode unit cell of distributed amplifier by connecting varactors in the gate-terminal of common gate. Compared to common source unit cell, cascode unit cell has many advantages such as high gain and high output impedance as well as negative resistance loading. But if the transistor model which is used in design is inaccurate and process parameter is changed, oscillation sometimes can occur at band edge in which the gain start to drop. Therefore, we need control circuit which can prevent oscillation, although the circuit has already fabricated, and varactor connected to gate-terminal of common gate of cascode gain cell can play that part. Measured result of fabricated distributed amplifier shows the capability of contol of gain characteristic by adjusting of value of varactors, this can guarantee the stability of the circuit. The gain is $8.92\pm0.82dB$ over 49 GHz, the group delay is $\pm9.3 psec$ over 41 GHz. All transistor which has $0.15{\mu}m$ gate length is GaAs based p-HEMT, and distributed amplifier is put together with 4 stages.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.10
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• pp.1126-1135
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• 2007

This paper presents the varactor-tuned miniaturized hairpin tunable filter with a single control voltage. The previously proposed miniaturization method is a very straight-forward method to miniaturize a parallel coupled-line filter. In this paper, the miniaturized hairpin tunable filter is proposed with the constant ratio rule of that the capacitances of the each stage always have constant ratio without any dependency to miniaturized electrical length. To show the validity of the proposed method, a 3rd order 0.5 dB ripple Chebyshev fitter with a center frequency of 900 MHz and a fractional bandwidth(FBW) of 10 % was designed and fabricated. The fabricated filter was based on CER-10 substrate of Taconic Inc. with 1SV277 varactor diode of Toshiba Inc. The center frequency of the fabricated filter can be changed from 606 MHz to 944 MHz, 338 MHz with the control voltage from 0.5 V to 4 V. The insertion loss of the proposed filter is increased with the increment of the control voltage, and the filter characteristics are well reserved expect of slight change of the bandwidth with the various control voltage.

• Journal of electromagnetic engineering and science
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• v.17 no.3
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• pp.138-146
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• 2017

A phase-locked dielectric resonator oscillator (PLDRO) is an essential component of millimeter-wave communication, in which phase noise is critical for satisfactory performance. The general structure of a PLDRO typically includes a dual loop of digital phase-locked loop (PLL) and analog PLL. A dual-loop PLDRO structure is generally used. The digital PLL generates an internal voltage controlled crystal oscillator (VCXO) frequency locked to an external reference frequency, and the analog PLL loop generates a DRO frequency locked to an internal VCXO frequency. A dual loop is used to ease the phase-locked frequency by using an internal VCXO. However, some of the output frequencies in each PLL structure worsen the phase noise because of the N divider ratio increase in the digital phase-locked loop integrated circuit. This study examines the design aspects of an interconnected PLL structure. In the proposed structure, the voltage tuning; which uses a varactor diode for the phase tracking of VCXO to match with the external reference) port of the VCXO in the digital PLL is controlled by one output port of the frequency divider in the analog PLL. We compare the proposed scheme with a typical PLDRO in terms of phase noise to show that the proposed structure has no performance degradation.

• Journal of electromagnetic engineering and science
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• v.5 no.1
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• pp.8-13
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• 2005

The InGaP/GaAs hetero-junction bipolar transistor(HBT) monolithic voltage-controlled dielectric resonator oscillator(VCDRO) is first demonstrated for a Ku-band low noise block down-converter(LNB) system. The on-chip voltage control oscillator core employing base-collector(B-C) junction diodes is proposed for simpler frequency tuning and easy fabrication instead of the general off-chip varactor diodes. The fabricated VCDRO achieves a high output power of 6.45 to 5.31 dBm and a wide frequency tuning range of ]65 MHz( 1.53 $\%$) with a low phase noise of below -95dBc/Hz at 100 kHz offset and -115 dBc/Hz at ] MHz offset. A]so, the InGaP/GaAs HBT monolithic DRO with the same topology as the proposed VCDRO is fabricated to verify that the intrinsic low l/f noise of the HBT and the high Q of the DR contribute to the low phase noise performance. The fabricated DRO exhibits an output power of 1.33 dBm, and an extremely low phase noise of -109 dBc/Hz at 100 kHz and -131 dBc/Hz at ] MHz offset from the 10.75 GHz oscillation frequency.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.8
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• pp.1429-1435
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• 2010

In this paper, a double lorentz composite right left handed(DL-CRLH) transmission line is designed using defected ground structure (DGS) and varactor diodes. Previously, the diode has been adopted only selectively for one of parallel or series resonators, and the balanced frequency as well as triple band frequencies were fixed. However in the proposed DL-CRLH transmission line, the balanced frequency, where the resonant frequencies of the series-connected parallel resonator and shunt-connected series resonator are the same, is adjustable. In addition, the triple band frequencies are controlled, too. The measured balanced frequency varies between 3.42~4.8GHz according to the controlled bias voltage. Under the same bias condition for the balanced frequency, the adjusted frequencies are 2.22~2.77GHz, 3.7~5.2GHz, 7.32~8.23GHz, 3.42~4.8GHz, and 4.44~5.92GHz for the conditions that ${\beta}d=+0.5{\pi}$, $-0.5{\pi}$, 2nd $+0.5{\pi}$, ${\omega}_{\infty}$, and ${\omega}_o$, respectively.