• 제목/요약/키워드: Vapor-solid reaction

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Study of Hydration Reaction Characteristics of Inorganic Salts for Chemical Cold Storage and Method of Enhancement of Heat and Mass Transfer (화학축냉용 무기염들의 수화반응 및 열 및 물질전달 향상방안)

  • 김상욱;한종훈;황용준;이건홍
    • Proceedings of the Korea Society for Energy Engineering kosee Conference
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    • 1999.05a
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    • pp.185-191
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    • 1999
  • An air-conditioning system based on the chemical heat storage principle was considered. $H_2O$ was chosen as the reaction gas and the working fluid as well. Na$_2$S, CaCl$_2$, MnCl$_2$, BaCl$_2$, MgCl$_2$, Fe$_2$(SO$_4$)$_3$ and MnSO$_4$ were tested as the solid reactants by using Cahn pressure balance. Na$_2$S was superior to other salts in respect of high capability of absorption of water gas, 5 moles of $H_2O$ per unit mole of Na$_2$S, and adequate temperature of adsorption, $65^{\circ}C$ at 7torr, and of desorption, 13$0^{\circ}C$ at 76torr. Clausius-Clapeyron diagram of Na$_2$S was obtained via adsorption experiments at several vapor pressures of water gas. To enhance heat and mass transfer characteristics, usually below 1W/m K, of the reactor bed of general adsorption systems, expanded graphite block was adapted as the support of Na$_2$S salt. Expanded graphite blocks had thermal conductivity values of 20~80W/mK with respect to 100~400kg/㎥ of block bulk density. Permeability values of expanded graphite blocks were 10$^{-13}$ ~ 10$^{-14}$ $m^2$ with respect to 100~300kg/㎥ of block bulk density showing highly decreasing values of permeability, below 10$^{-l4}$$m^2$, in the range of above 150kg/㎥ of block bulk density.y.

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Study of CO2 Carbonation-Regeneration Characteristics of Potassium-Based Dry Sorbents According to Water Vapor Contents of Inlet Gas and Regeneration Temperature in the Cycle Experiments of Bubbling Fluidized-Bed Reactor (회분식 기포유동층 반응기에서 K-계열 건식흡수제의 주입수분농도 및 재생반응온도에 따른 CO2 흡수-재생 반응특성 연구)

  • Park, Keun-Woo;Park, Yeong Seong;Park, Young Cheol;Jo, Sung-Ho;Yi, Chang-Keun
    • Korean Chemical Engineering Research
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    • v.47 no.3
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    • pp.349-354
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    • 2009
  • In this study, a bubbling fluidized-bed reactor was used to study $CO_2$ capture from flue gas using a potassium-based dry sorbent. A dry sorbent, manufactured by the Korea Electric Power Research Institute, consists of 35% of $K_2CO_3$ for $CO_2$ absorption and 65% of supporters for mechanical strength. $H_2O$, a reactant of the carbonation reaction, was supplied in the reactor as a form of saturated water vapor at a given temperature. The experiment of the regeneration reaction was performed by raising up to a given temperature using $N_2$ as a fluidization gas. It was indicated that sorption capacity and regenerability of dry sorbents showed high-efficiency at $1.97\;mol\;H_2O/mol\;CO_2$ and $400^{\circ}C$, respectively. The regenerated sorbent samples were analyzed by TGA to confirm the extent of the reaction. When the regeneration temperature was $150^{\circ}C$, the regenerability of dry sorbents was about 60%, which was capable of applying those sorbents to a two-interconnected fluidized-bed reactor system with continuous solid circulation. The results obtained in this study can be used as basic data for designing and operating a large scale $CO_2$ capture process with two fluidized-bed reactors.

Effect of TaB2 Addition on the Oxidation Behaviors of ZrB2-SiC Based Ultra-High Temperature Ceramics

  • Lee, Seung-Jun;Kim, Do-Kyung
    • Korean Journal of Materials Research
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    • v.20 no.4
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    • pp.217-222
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    • 2010
  • Zirconium diboride (ZrB2) and mixed diboride of (Zr0.7Ta0.3)B2 containing 30 vol.% silicon carbide (SiC) composites were prepared by hot-pressing at $1800^{\circ}C$. XRD analysis identified the high crystalline metal diboride-SiC composites at $1800^{\circ}C$. The TaB2 addition to ZrB2-SiC showed a slight peak shift to a higher angle of 2-theta of ZrB2, which confirmed the presence of a homogeneous solid solution. Elastic modulus, hardness and fracture toughness were slightly increased by addition of TaB2. A volatility diagram was calculated to understand the oxidation behavior. Oxidation behavior was investigated at $1500^{\circ}C$ under ambient and low oxygen partial pressure (pO2~10-8 Pa). In an ambient environment, the TaB2 addition to the ZrB2-SiC improved the oxidation resistance over entire range of evaluated temperatures by formation of a less porous oxide layer beneath the surface SiO2. Exposure of metal boride-SiC at low pO2 resulted in active oxidation of SiC due to the high vapor pressure of SiO (g), and, as a result, it produced a porous surface layer. The depth variations of the oxidized layer were measured by SEM. In the ZrB2-SiC composite, the thickness of the reaction layer linearly increased as a function of time and showed active oxidation kinetics. The TaB2 addition to the ZrB2-SiC composite showed improved oxidation resistance with slight deviation from the linearity in depth variation.

Synthesis and Characterization of $In_2O_3$ Nanowires in a Wet Oxidizing Environment (습식 산화 분위기에서의 산화 인듐 나노선의 합성 및 구조적 특성)

  • Jeong, Jong-Seok;Kim, Young-Heon;Lee, Jeong-Yong
    • Applied Microscopy
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    • v.33 no.1
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    • pp.17-23
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    • 2003
  • Indium oxide ($In_2O_3$) nanowires were successfully synthesized by a simple reaction in a wet oxidizing environment at low temperature without metal catalyst. The nanowires were characterized by an x-ray diffraction (XRD), a scanning electron microscopy (SEM) equipped with an energy dispersive spectrometry (EDS), and a transmission electron microscopy (TEM). It was shown that the $In_2O_3$ nanowires were two types of morphology, uniform nanowires and nanowires containing $In_2O_3$ nanoparticles in its stem. It was found that lengths of the nanowires were ranges of several micrometers and their diameters were around $10{\sim}250$ nm. The growth direction of the nanowires was investigated and their growth mechanism is also discussed.

Thermal CVD of Silica Thin Film by Organic Silane Compound (유기 실란화합물을 이용한 SiO2 박막의 열CVD)

  • Kim, Byung-Hoon;Ahn, Ho-Geun;Imaishi, Nobuyuki
    • Applied Chemistry for Engineering
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    • v.10 no.7
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    • pp.985-989
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    • 1999
  • Silica($SiO_2$) thin film was synthesized by a low pressure metal organic chemical vapor deposition(LPMOCVD) using organic silane compound. Triethyl orthosilicate was used as a source material. Operation pressure was 1~100 torr at outlet of the reactor and deposition temperature was $600{\sim}900^{\circ}C$. The experimental results showed that the high reaction temperature and high source gas concentration led to higher growth rate of $SiO_2$. The step coverage of films on micro-scale trenches was fairly good, which resulted from the phenomena that the condensed oligomers flow into the trenches. We estimated a reaction path that the source gas polymerizes and produces oligomers (dimer, trimer, tetramer, etc.), which diffuse and condense on the solid surface. The chemical species in the gas phase at the outlet of reactor tube were analyzed by quadrapole mass spectrometer. The peaks, assigned to be monomer, dimer of source gas and geavier molecules, were observed at 650 or $700^{\circ}C$. At higher temperature($900^{\circ}C$), the peaks of the heavy molecules disappeared, because almost all the source gas and intermediate(polymerized oligomer) molecules were oxidized or condensed on colder tube wall.

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Hexagonal shape Si crystal grown by mixed-source HVPE method (혼합소스 HVPE 방법에 의해 성장된 육각형 Si 결정)

  • Lee, Gang Seok;Kim, Kyoung Hwa;Park, Jung Hyun;Kim, So Yoon;Lee, Ha Young;Ahn, Hyung Soo;Lee, Jae Hak;Chun, Young Tea;Yang, Min;Yi, Sam Nyung;Jeon, Injun;Cho, Chae Ryong;Kim, Suck-Whan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.3
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    • pp.103-111
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    • 2021
  • Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method of mixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method, nuclei are formed by the interaction between GaCln, AlCln and SiCln gases at a high temperature of 1200℃. In addition, it is designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. The properties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expected to be applied as a new material in the Si industry.

Synthesis and Phase Relations of Potassium-Beta-Aluminas in the Ternary System K2O-MgO-Al2O3 (K2O-MgO-Al2O3 3성분계에서 K+-β/β"-Al2O3의 합성 및 상관계)

  • Ham, Choul-Hwan;Lim, Sung-Ki;Lee, Chung-Kee;Yoo, Seung-Eul
    • Applied Chemistry for Engineering
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    • v.10 no.7
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    • pp.1086-1091
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    • 1999
  • $K^+-{\beta}/{\beta}"-Al_2O_3$ in the ternary system $K_2O-MgO-Al_2O_3$ was directly synthesized by solid state reaction. The phase formation and phase relation were carefully investigated in relation to starting composition, calcining temperature and time, and dispersion medium. The optimal synthetic condition was also examined for the formation of ${\beta}"-Al_2O_3$ phase with a maximum fraction. As a composition range, the mole ratio of $K_2O$ to $Al_2O_3$ was changed from 1:5 to 1:6.2 and the amount of MgO used as a stabilizer was varied from 4.2 wt % to 6.3 wt %. The calcining temperature was selected between $1000^{\circ}C$ and $1500^{\circ}C$. At $1000^{\circ}C$, the ${\beta}/{\beta}"-Al_2O_3$ phases began to form resulted from the combining of ${\alpha}-Al_2O_3$ and $KAlO_2$ and increased with temperature rising. All of ${\alpha}-Al_2O_3$ phase disappeared to be homogenized to the ${\beta}/{\beta}"-Al_2O_3$ phase at $1200^{\circ}C$. Near the temperature at $1300^{\circ}C$, the fraction of ${\beta}"-Al_2O_3$ phase showed a maximum value with the composition of $K_{1.67}Mg_{0.67}Al_{10.33}O_{17}$. At temperatures above $1300^{\circ}C$, the fraction of ${\beta}"-Al_2O_3$ phase decreased gradually owing to $K_2O$ loss caused by a high potassium vapor pressure, and the appropriate calcining time was about 5 hours. Acetone was more effective than distilled water as a dispersion medium for milling and mixing.

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