• Title/Summary/Keyword: Vapor-Solid growth

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Solid State Cesium Ion Beam Sputter Deposition

  • Baik, Hong-Koo
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.5-18
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    • 1996
  • The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

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Optical(Interferometric) Measurements of Vapor Deposition Growth Rate and Dew Points in Combustion Gases (빛의 간섭현상을 이용한 증기용착 성장속도 측정법의 실험적 연구)

  • 김상수;송영훈
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.10 no.3
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    • pp.343-348
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    • 1986
  • An optical interference method was developed for measuring rapidly growing and evaporating liquid condensate films (e.g., Na$_{2}$SO$_{4}$, $K_{2}$SO$_{4}$) on solid surface exposed to flowing combustion product gases at film thicknesses well below the onset of complications due to run-off. To develop this optical system, this study investigated the optical parameters (e.g., polarization state, incident angle, target roughness, etc.) Trends for the Na$_{2}$SO$_{4}$(l) and $K_{2}$SO$_{4}$(l) deposition rates as a function of target temperature using this optical measuring system agree with the theoretical prediction of the vapor deposition. This study was able to extend the experimental range for vapor plus condensed phase transport and deposition. While previously unable to measure the evaporation rates interferometrically, these rates are estimated from the results of the investigation of polarization states.

Self Growth of Silica Nanowires on a Si/SiO2 Substrate

  • Jeong, Hann-Ah;Seong, Han-Kyu;Choi, Heon-Jin
    • Journal of the Korean Ceramic Society
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    • v.45 no.3
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    • pp.142-145
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    • 2008
  • The growth of amorphous silica nanowires by on-site feeding of silicon and oxygen is reported. The nanowires were grown on a nickel-coated oxidized silicon substrate without external silicon or oxygen sources. Transmission electron microscopy observation revealed that the nanowires, which have diameters of less than 50 nm and a length of several micrometers, were grown using a traditional vapor-liquid-solid mechanism. Blue photoluminescence was observed from these nanowires at room temperature. An approach to grow nanowires without external precursors may be useful when integrating nanowires into devices structures. This can benefit the fabrication of nanowire-based nanodevices.

Effect of the O2/N2 Ratio on the Growth of TiO2 Nanowires via Thermal Oxidation (열 산화를 이용한 TiO2 나노선의 성장에 미치는 O2/N2 가스비의 영향)

  • Lee, Geun-Hyoung
    • Korean Journal of Materials Research
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    • v.25 no.10
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    • pp.543-546
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    • 2015
  • $TiO_2$ nanowires were grown by thermal oxidation of TiO powder in an oxygen and nitrogen gas environment at $1000^{\circ}C$. The ratio of $O_2$ to $N_2$ in an ambient gas was changed to investigate the effect of the gas ratio on the growth of $TiO_2$nanowires. The oxidation process was carried out at different $O_2$/$N_2$ ratios of 0/100, 25/75, 50/50 and 100/0. No nanowires were formed at $O_2$/$N_2$ ratios of less than 25/75. When the $O_2$/$N_2$ ratio was 50/50, nanowires started to form. As the gas ratio increased to 100/0, the diameter and length of the nanowires increased. The X-ray diffraction pattern showed that the nanowires were $TiO_2$ with a rutile crystallographic structure. In the XRD pattern, no peaks from the anatase and brookite structures of $TiO_2$were observed. The diameter of the nanowires decreased along the growth direction, and no catalytic particles were detected at the tips of the nanowires which suggests that the nanowires were grown with a vapor-solid growth mechanism.

VLS growth of ZrO2 nanowhiskers using CVD method

  • Baek, Min-Gi;Park, Si-Jeong;Jeong, Jin-Hwan;Choe, Du-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.149-149
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    • 2016
  • Ceramic is widely known material due to its outstanding mechanical property. Besides, Zirconia(ZrO2) has a low thermal conductivity so it is advantage in a heat insulation. Because of these superior properties, ZrO2 is attracted to many fields using ultra high temperature for example vehicle engines, aerospace industry, turbine, nuclear system and so on. However brittle fracture is a disadvantage of the ZrO2. In order to overcome this problem, we can make the ceramic materials to the forms of ceramic nanoparticles, ceramic nanowhiskers and these forms can be used to an agent of composite materials. In this work, we selected Au catalyzed Vapor-Liquid-Solid mechanism to synthesize ZrO2 nanowhiskers. The ZrO2 whiskers are grown through Hot-wall Chemical Vapor Deposition(Hot wall CVD) using ZrCl4 as a powder source and Au film as a catalyst. This Hot wall CVD method is known to comparatively cost effective. The synthesis condition is a temperature of $1100^{\circ}C$, a pressure of 760torr(1atm) and carrier gas(Ar) flow of 500sccm. To observe the morphology of ZrO2 scanning electron microscopy is used and to identify the crystal structure x-ray diffraction is used.

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The Growth of Diamond-Like-Carbon (DLC) Film by PECVD and the Characterization (PECVD에 의한 DLC 박막의 성장과 그 특성 조사)

  • 조재원;김태환;김대욱;최성수
    • Journal of the Korean Vacuum Society
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    • v.7 no.3
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    • pp.248-254
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    • 1998
  • DLC(Diamond-Like-Carbon) thin film, one of the solid state amorphous carbon films, has been deposited by the method of PECVD (Plasma Enhanced Chemical Vapor Deposition). The structural features have been characterized using both FT-IR Spectroscopy and Raman Scattering. The film is considered to consist of microcrystalline diamond domains and graphitelike carbon domains, which are interconnected by hydrogenated $sp^3$ tetrahedral carbons. This shows a good agreement with the results by I-Vmeasurements. In I-Vstudy, the sudden increase of current has been observed and this phenomenon is understood to be due to the tunneling effect between graphitelike domains. A characteristic feature related to the $\beta$-SiC has been identified in the study of Raman Scattering for the very thin film, which suggests that a buffer layer forms at the interface of the Si substrate and the carbon film.

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Changes of Smoke Components and Smoke Odor by Far Infra-red Radiation in a Closed Room

  • Hwang, Keon-Joong;Rhee, Moon-Soo;Ra, Do-Young
    • Journal of the Korean Society of Tobacco Science
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    • v.20 no.2
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    • pp.198-204
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    • 1998
  • This study was conducted to evaluate the effect of far IR radiation for the elimination of sidestream smoke components in a closed room. The measurements covered particle sizes of 13.8-542.5 nm, particle concentration, TSP, UVPM, FPM, solanesol, and the following gases and vapor components of smoke: carbon dioxide, carbon monoxide, nicotine, and 3-ethenyl-pyridine. Also, the changes of smoke odor strength by far IR radiation were tested by using the electronic nose system. There was no difference between control and far IR radiation in changes of the concentration of $CO_2$ and CO. The concentrations of TSP, UVPM, FPM, solanesol, nicotine, and 3-ethenylpyridine were reduced by far IR radiation. The growth and diminishing rate of RSP diameter was accelerated by far IR radiation compared with control. There was a little difference of smoke odor change with far IR radiation by electronic nose system analysis. Our results indicated that the use of far IR radiation had a little effect on changes of solid, vapor, and odor of smoke, but it had no effect on gaseous components.

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Growth of ZnO Nanorod Using VS Method (기상증착공정에 의한 산화아연 나노로드의 성장)

  • Kim, Na-Ri;Kim, Jae-Soo;Byun, Dong-Jin;Rho, Dae-Ho;Yang, Jae-Woong
    • Korean Journal of Materials Research
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    • v.13 no.10
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    • pp.668-672
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    • 2003
  • The ZnO nanorods were synthesized using vapor-solid (VS) method on sodalime glass substrate without the presence of metal catalyst. ZnO nanorods were prepared thermal evaporation of Zn powder at $500^{\circ}C$. As-fabricated ZnO nanorods had an average diameter and length of 85 nm and 1.7 $\mu\textrm{m}$. Transmission electron microscopy revealed that the ZnO nanorods were single crystalline with the growth direction perpendicular to the (101) lattice plane. The influences of reaction time on the formation of the ZnO nanorods were investigated. The photoluminescence measurements showed that the ZnO nanorods had a strong ultraviolet emission at around 380 nm and a green emission at around 500 nm.

One-Dimensional MgO Nanostructures with Various Morphologies Grown by Thermal Evaporation Method under Atmospheric Environment (대기 분위기에서 열증발법에 의해 성장된 여러 가지 형상의 일차원 MgO 나노구조)

  • Nam-Woo Kim;Jin-Su Kim;Geun-Hyoung Lee
    • Korean Journal of Materials Research
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    • v.33 no.7
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    • pp.279-284
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    • 2023
  • One-dimensional MgO nanostructures with various morphologies were synthesized by a thermal evaporation method. The synthesis process was carried out in air at atmospheric pressure, which made the process very simple. A mixed powder of magnesium and active carbon was used as the source powder. The morphologies of the MgO nanostructures were changed by varying the growth temperature. When the growth temperature was 700 ℃, untapered nanowires with smooth surfaces were grown. As the temperature increased to 850 ℃, 1,000 ℃ and 1,100 ℃, tapered nanobelts, tapered nanowires and then knotted nanowires were sequentially observed. X-ray diffraction analysis revealed that the MgO nanostructures had a cubic crystallographic structure. Energy dispersive X-ray analysis showed that the nanostructures were composed of Mg and O elements, indicating high purity MgO nanostructures. Fourier transform infrared spectra peaks showed the characteristic absorption of MgO. No catalyst particles were observed at the tips of the one-dimensional nanostructures, which suggested that the one-dimensional nanostructures were grown in a vapor-solid growth mechanism.

Structural and optical properties of Si nanowires grown with island-catalyzed Au-Si by rapid thermal chemical vapor deposition(RTCVD) (Au-Si을 촉매로 급속화학기상증착법으로 성장한 Si 나노선의 구조 및 광학적 특성 연구)

  • Kwak, D.W.;Lee, Y.H.
    • Journal of the Korean Vacuum Society
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    • v.16 no.4
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    • pp.279-285
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    • 2007
  • We have demonstrated structural evolution and optical properties of the Si-NWs on Si (111) substrates with synthesized nanoscale Au-Si islands by rapid thermal chemical vapor deposition(RTCVD). Au nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. Si-NWs were grown by a mixture gas of $SiH_4\;and\;H_2$ at pressures of $0.1{\sim}1.0$Torr and temperatures of $450{\sim}650^{\circ}C$. SEM measurements showed the formation of Si-NWs well-aligned vertically for Si (111) surfaces. The resulting NWs are 30-100nm in diameter and $0.4{\sim}12um$ in length depending on growth conditions. HR-TEM measurements indicated that Si-NWs are single crystals convered with about 3nm thick layers of amorphous oxide. In addition, optical properties of NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si optical phonon peak with a shoulder at $480cm^{-1}$ were observed in Raman spectra of Si-NWs.