• Korean Journal of Materials Research
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• v.9 no.8
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• pp.825-830
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• 1999

Characteristics of SiOF films deposited by a FTES/$O_2$-plasma enhanced chemical vapor deposition method have been investigated using Fourier transform infrared spectroscopy, X-ray photoelectro spectroscopy, and ellipsometry. Electrical properties such as dielectric constant, dielectric breakdown and leakage current density are investigated using C-V and I-V measurements with MIS(Au/SiOF/p-Si) capacitor structure. Stepcoverage of the films have been also characterized using scanning electron microscopy and ellipsometry. A high quality SiOF film was formed on that the flow rates of FTES and $O_2$were 300sccm, respectively. The dielectric constant of the deposited SiOF film was about 3.1. This value is lower than that of the oxide films obtained using other method. The dielectric breakdown field and leakage current are more than 10MV/cm and about $8[\times}10^{9}A/\textrm{cm}^2$, respectively. The deposited SiOF film with thickness as $2500{\AA}$ on the $0.3{\mu}{\textrm}{m}$ metal pattern shows a high step-coverage without a void.

• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.3
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• pp.30-37
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• 2008

The evaporation pressure drop of $CO_2$ (R-744) in horizontal tubes was investigated experimentally. The experiments were conducted without oil in a closed refrigerant loop which was driven by a magnetic gear pump. The main components of the refrigerant loop are a receiver, a variable-speed pump, a mass flow meter, a pre-heater and evaporator (test section). The test section consists of a smooth, horizontal stainless steel tube of 7.75 and 4.57 mm inner diameter. The experiments were conducted at saturation temperature of $-5^{\circ}C\;to\;5^{\circ}C$, and heat flux of 10 to $40kW/m^2$. The test results showed the evaporation pressure drop of $CO_2$ are highly dependent on the vapor quality, heat flux and saturation temperature. The pressure drop measured during the evaporation process of $CO_2$ increases with increased mass flux, and decreases as the saturation temperature increased. The evaporation pressure drop of $CO_2$ is very lower than that of R-22. In comparison with test results and existing correlations, the best fit of the present experimental data is obtained with the correlation of Choi et al. But existing correlations failed to predict the evaporation pressure drop of $CO_2$. Therefore, it is necessary to develop reliable and accurate predictions determining the evaporation pressure drop of $CO_2$ in a horizontal tube.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.28 no.2
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• pp.200-210
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• 2018

Objectives: The purpose of this study is to assess the exposure to ozone and total volatile organic compounds(TVOCs) generated during welding work at a shipyard and recommend respiratory protective equipment(RPE) adequate against these hazards. Method: Ozone was collected for about 30 minutes at two-minutes intervals using a direct reading instrument, specifically an ozone analyzer(Serinus 10, Ecotech, Australia). TVOCs were collected for about 30 minutes at three-minute intervals using a portable GC (Alpha 115, Synspec BV, the Netherlands), and were determined simultaneously by area sampling at the welding plume closest to the welder's breathing zone. The total measurements were 162 for ozone($CO_2$ welding 47, TIG 60, stick 55), and 136 for TVOCs($CO_2$ 65, TIG 50, stick 21). Based on these measurements, a literature survey was conducted to assess the adequacy of RPE. Results: Relative to Korean OEL, measurements above STEL 0.2 ppm were 23.4% for $CO_2$, 63.3% for TIG and 14.5% for stick welding. There were significant differences(p=<0.0001) among welding types. Compared with ACGIH peak exposure of 0.4 ppm for ozone, which is not applied in Korea, $CO_2$ welding exceeded it by 10.6%, TIG by 40.0% and stick by 7.3%. Although it was not feasible to compare them directly since there are no Korean OEL, TVOCs had very high levels similar to the concentrations before moving into a new apartment and about 10-20 times the indoor air quality recommendations for some individual measurements. Conclusions: As ozone removal RPE has been recommended in welding environments for a long time(Lunau, 1967), this fact was demonstrated based on the results of the on-site work environment measurements(ozone and TVOCs). In conclusion, for all welding at a shipyard, gas/vapor and particulate combination RPE are recommended. If this is not possible, it should at least be present for TIG welding.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• Progress in Superconductivity and Cryogenics
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• v.16 no.4
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• pp.71-77
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• 2014

For a long-term space mission, filling process of cryogenic liquid propellant is operated on a space vehicle in space. A vent process during transfer and filling of cryogenic propellant is needed to maintain the fuel tank pressure at a safe level due to its volatile characteristic. It is possible that both liquid and vapor phases of the cryogenic propellant are released simultaneously to outer space when the vent process occurs under low gravity environment. As a result, the existing filling process with venting not only accompanies wasting liquid propellant, but also consumes extra fuel to compensate for the unexpected momentum originated from the vent process. No-Vent Fill (NVF) method, a filling procedure without a venting process of cryogenic liquid propellant, is an attractive technology to perform a long-term space mission. In this paper, the preliminary experimental results of the NVF process are described. The experimental set-up consists of a 9-liter cryogenic liquid receiver tank and a supply tank. Liquid nitrogen ($LN_2$) is used to simulate the behavior of cryogenic propellant. The whole situation in the receiver tank during NVF is monitored. The major experimental parameter in the experiment is the mass flow rate of the liquid nitrogen. The experimental results demonstrate that as the mass flow rate is increased, NVF process is conducted successfully. The quality and the inlet temperature of the injected $LN_2$ are affected by the mass flow rate. These parameters determine success of NVF.

• Korean Journal of Materials Research
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• v.28 no.5
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• pp.301-307
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• 2018

A boron-doped diamond(BDD) electrode is attractive for many electrochemical applications due to its distinctive properties: an extremely wide potential window in aqueous and non-aqueous electrolytes, a very low and stable background current and a high resistance to surface fouling. An Ar gas mixture of $H_2$, $CH_4$ and trimethylboron (TMB, 0.1 % $C_3H_9B$ in $H_2$) is used in a hot filament chemical vapor deposition(HFCVD) reactor. The effect of argon addition on quality, structure and electrochemical property is investigated by scanning electron microscope(SEM), X-ray diffraction(XRD) and cyclic voltammetry(CV). In this study, BDD electrodes are manufactured using different $Ar/CH_4$ ratios ($Ar/CH_4$ = 0, 1, 2 and 4). The results of this study show that the diamond grain size decreases with increasing $Ar/CH_4$ ratios. On the other hand, the samples with an $Ar/CH_4$ ratio above 5 fail to produce a BDD electrode. In addition, the BDD electrodes manufactured by introducing different $Ar/CH_4$ ratios result in the most inclined to (111) preferential growth when the $Ar/CH_4$ ratio is 2. It is also noted that the electrochemical properties of the BDD electrode improve with the process of adding argon.

• Proceedings of the SAREK Conference
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• 2005.11a
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• pp.262-267
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• 2005

The evaporation heat transfer coefficient of $CO_2$ in a horizontal round tube was investigated experimentally. The experiments were conducted without oil in a closed refrigerant loop which was driven by a magnetic gear pump. The main components of the refrigerant loop are a receiver, a variable-speed pump, a mass flow meter, a pre-heater and evaporator(test section). The test section was made of a horizontal stainless steel tube with the inner diameter of 7.75 mm, and length of 5 m. The experiments were conducted at mass flux of 200 to 500 $kg/m^2s$, saturation temperature of $-5^{\circ}C$ to $5^{\circ}C$, and heat flux of 10 to 40 $kW/m^2$. The test results showed the evaporation heat transfer of $CO_2$ has great effect on more nucleate boiling than convective boiling. The evaporation heat transfer coefficients of $CO_2$ are highly dependent on the vapor quality, heat flux and saturation temperature. In comparison with teat results and existing correlations, correlations failed to predict the evaporation heat transfer coefficient of $CO_2$, therefore, it is necessary to develop reliable and accurate predictions determining the evaporation heat transfer coefficient of $CO_2$ in a horizontal tube.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.550-555
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• 2011

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used $Cu_2In_3$, CuGa and $Cu_2Se$ sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of $Cu_2In_3$, CuGa and $Cu_2Se$ showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and $Cu_2Se$ phases. After selenization at $550^{\circ}C$ for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin $Cu_2Se$ layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.446-446
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• 2011

One dimensional (1-D) structures of ZnO nanorods are promising elements for future optoelectronic devices. However there are still many obstacles in fabricating high-quality p-type ZnO up to now. In addition, it is limited to measure the degree of the doping concentration and carrier transport of the doped 1-D ZnO with conventional methods such as Hall measurement. Here we demonstrate the measurement of the electronic properties of p- and n-doped ZnO nanorods by the Kelvin probe force microscopy (KPFM). Vertically aligned ZnO nanorods with intrinsic n-doped, As-doped p-type, and p-n junction were grown by vapor phase epitaxy (VPE). Individual nanowires were then transferred onto Au films deposited on Si substrates. The morphology and surface potentials were measured simultaneously by the KPFM. The work function of the individual nanorods was estimated by comparing with that of gold film as a reference, and the doping concentration of each ZnO nanorods was deduced. Our KPFM results show that the average work function difference between the p-type and n-type regions of p-n junction ZnO nanorod is about ~85meV. This value is in good agreement with the difference in the work function between As-doped p- and n-type ZnO nanorods (96meV) measured with the same conditions. This value is smaller than the expected values estimated from the energy band diagram. However it is explained in terms of surface state and surface band bending.