• Transactions of the Korean Society of Automotive Engineers
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• v.17 no.1
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• pp.146-153
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• 2009

The performance characteristics of heat exchangers which consist of a gas cooler, an evaporator and an internal heat exchanger have been investigated at various operating conditions of $CO_2$ air conditioning system by experiments. The heat exchangers were designed for use in the vehicle $CO_2$ air conditioning system, when considering the characteristics of heat transfer and high pressure as $CO_2$ refrigerant. This paper studied the performance of heat exchangers at various compressor speeds and expansion valve openings, and quantified the heat transfer rates and pressure drops. Heat transfer rates at the gas cooler and the evaporator were 6.9 kW and 5.2 kW, respectively, when the compressor speed was 4000 rpm and refrigerant vapor quality at the evaporator outlet was 0.98. Therefore, this paper carried out that the heat exchangers were analyzed to achieve superior performance for the vehicle transcritical $CO_2$ cycle.

• Progress in Superconductivity and Cryogenics
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• v.16 no.3
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• pp.7-9
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• 2014

Single-crystal like $MgB_2$ thin film was grown on (000l) $Al_2O_3$ substrate by using hybrid physical-chemical vapor deposition (HPCVD) system. Single crystal properties were studied by X-ray diffraction (XRD) and the full width at half maximum (FWHM) of the (0001) $MgB_2$ peak is $15^{\circ}$, which is very close to that has been reported for $MgB_2$ single-crystal. It indicates that the crystalline quality of thin film is good. Temperature dependence on resistivity was investigated by physical property measurement system (PPMS) in various applied fields from 0 to 9 T. The upper critical field ($H_{c2}$) and irreversibility field ($H_{irr}$) were determined from PPMS data, and the estimated values are comparable with that of $MgB_2$ single-crystals. The thin film shows a high critical temperature ($T_c$) of 40.4 K with a sharp superconducting transition width of 0.2 K, and a high residual resistivity ratio (RRR=21), it reflects that $MgB_2$ thin film has a pure phase structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.732-736
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• 2006

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.49-53
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• 2010

Microstructural origins of leakage current and physical degradation during operation in product-quality AlGaN/GaN high electron mobility transistor (HEMT) devices were investigated using photon emission microscopy (PEM) and transmission electron microscopy (TEM). AlGaN/GaN HEMTs were fabricated with metal organic chemical vapor deposition on semi-insulating SiC substrates. Photon emission irregularity, which is indicative of gate leakage current, was measured by PEM. Site specific TEM analysis assisted by a focused ion beam revealed the presence of threading dislocations in the channel below the gate at the position showing strong photon emissions. Observation of electrically degraded devices after life tests revealed crack/pit shaped defects next to the drain in the top AlGaN layer. The morphology of the defects was three-dimensionally investigated via electron tomography.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.156-161
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• 2007

This paper describes the characteristics of polycrystalline ${\beta}$ or 3C (cubic)-SiC (silicon carbide) thin films heteroepitaxailly grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC film was deposited by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane: $Si_{2}(CH_{3}_{6})$ single precursor. The deposition was performed under various conditions to determine the optimized growth conditions. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_{2}$ were measured by SEM (scanning electron microscope). Finally, depth profiling was invesigated by GDS (glow discharge spectrometer) for component ratios analysis of Si and C according to the grown 3C-SiC film thickness. From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therfore, the poly 3C-SiC thin film is suitable for extreme environment, Bio and RF MEMS applications in conjunction with Si micromaching.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.20 no.2
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• pp.87-96
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• 2008

Flow condensation heat transfer coefficients(HTCs) of R123 and R245fa are measured in a horizontal plain tube. The main test section in the experimental flow loop is made of a plain copper tube of 9.52 mm outside diameter and 530 mm length. The refrigerant is cooled by passing cold water through an annulus surrounding the test section. Tests are performed at a fixed saturation temperature of $50\;{\pm}\;0.2\;^{\circ}C$ with mass fluxes of 50, 100, $150\;kg/m^2s$ and heat flux of $7.3{\sim}7.7\;kW/m^2$. Heat transfer data are obtained in the vapor quality range of $10{\sim}90%$. Test results show that the flow condensation HTCs of R245fa are overall 7.9% higher than those of R123 at all mass fluxes. The pressure drop of R245fa is smaller than that of R123 at the same heat flux. In conclusion, R245fa is a good candidate to replace ozone depleting R123 currently used in chillers from the view point heat transfer and environmental properties.

• Proceedings of the SAREK Conference
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• 2008.06a
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• pp.1255-1260
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• 2008

This study is simulation of high elevated liquid line of a modular heat pump system to observe longitudinal subcooling variation. In a high elevated tube, subcooled refrigerant(R410A) through a condenser changes its states by heat transfer with surrounding air and by pressure drop from elevation. In this study, the liquid line was simulated through correlations of heat transfer and pressure drop for the variation from single-phase into two-phase flow. Pressure drop, heat transfer rate and vapor quality were calculated as key parameters. Two-phase turning heights and variations of the key parameters were confirmed from the simulation. As a result, high elevation of liquid line has great influence on upward flow, which requires additional equipment to compensate the variation.

• Clean Technology
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• v.24 no.3
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• pp.233-238
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• 2018

Bio-oil is produced by the fast quenching of hot vapor produced by fast pyrolysis of biomass in an inert atmosphere. Nitrogen is used as carrier gas to control the concentration of oxygen less than 3%. The consumption of nitrogen should be increased with increasing process size, and leading to increasing of facility and operating costs due to nitrogen charge. The effects of the recycling of non-condensable gases on the fast pyrolysis, bio-oil yield and quality, and nitrogen consumption have systematically investigated to see the possibility of these results in fast pyrolysis process of palm residue.

• Journal of Power System Engineering
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• v.11 no.1
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• pp.63-69
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• 2007

The evaporation pressure drop of $CO_2$ (R-744) in a horizontal tube was investigated experimentally. The main components of the refrigerant loop are a receiver, a variable-speed pump, a mass flow meter, a pre-heater and an evaporator (test section). The test section consists of a smooth, horizontal stainless steel tube of 4.57 mm inner diameter. The experiments were conducted at saturation temperature of $-5^{\circ}C\;to\;5^{\circ}C$, and heat flux of 10 to $40kW/m^2$. The test results showed that the evaporation pressure drop of $CO_2$ are highly dependent on the vapor quality, heat flux and saturation temperature. The measured pressure drop during the evaporation process of $CO_2$ increases with increased mass flux, and decreased saturation temperature. The evaporation pressure drop of $CO_2$ is much lower than that of R 22. In comparison with test results and existing correlations, the best fit of the present experimental data is obtained with the previous correlation. But existing correlations failed to predict the evaporation pressure drop of $CO_2$. Therefore, it is necessary to develop reliable and accurate predictions determining the evaporation pressure drop of $CO_2$ in a horizontal tube.

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.450-453
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• 2008

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown in a low-pressure metal organic chemical vapor deposition technique. The effect of In doping on the p-GaN layer was studied through photoluminescence (PL), persistent photoconductivity (PPC), and transmission electron microscopy (TEM) at room temperature. For the In-doped p-GaN layer, the PL intensity increases significantly and the peak position shifts to 3.2 eV from 2.95 eV of conventional p-GaN. Additionally, In doping greatly reduces the PPC, which was very strong in conventional p-GaN. A reduction in the dislocation density is also evidenced upon In doping in p-GaN according to TEM images. The improved optical properties of the In-doped p-GaN layer are attributed to the high crystalline quality and to the active participation of incorporated Mg atoms.