• Journal of Advanced Marine Engineering and Technology
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• 제21권2호
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• pp.144-156
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• 1997

Experimental results for forced convection heat transfer of pure refrigerant and nonrefrigerant mixtures during condensing inside horizontal smooth tubes, double pipe heat exchanger of 7.5 mm ID and 4 000 mm long inside tube, are presented. Pure refrigerant R - 22 and R - 407 c, the mixture of R - 32 + R - 125 + R - 134a (23/25/52, wt %) are used as the test fluids. The ranges of parameters are $114.3{\sim}267.1 kg/(m^2 {\cdot} s)$ of mass velocity, <0$\sim$1.0 of quality. The vapor pressure, vapor temperature and tube wall temperature were measured. Using these data, the local and average heat transfer coefficients for the condensation are obtained. At the same given experimental conditions, the condensation heat transfer coefficients for NARMs R - 407c were lower than those for the pure refrigerant of R - 22. Local heat transfer characteristics for R - 407c were different from pure refrigerant R - 22. The condensaheat transfer coefficients for R - 407c and R - 22 increased with mass velocity. Based on the data a prediction method was presented for the calculation of dimensionless average heat transfer coefficient.

• 반도체디스플레이기술학회지
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• 제14권2호
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• pp.61-65
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• 2015

SiC composite materials are usually used to very high temperature condition such as thermal protection system materials at space vehicles, combustion chambers or engine nozzles because they have high specific strength and good thermal properties at high temperature. One of the most widely used fabrication methods of SiC composites is the chemical vapor infiltration (CVI) process. During the process, chemical gases including Si are introduced into porous preform which is made by carbon fibers for infiltration. Since the processes take a very long time, it is important to reduce the process time in designing the reactors and processes. In this study, both the gas flow and heat transfer in the reactors during the processes are analyzed using a computational fluid dynamics method in order to design reactors and processes for uniform, high quality SiC composites. Effects of flow rate and heater temperature as process parameters to the infiltration process were examined.

• Journal of Photoscience
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• 제7권1호
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• pp.27-30
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• 2000

The Photoluminescence (PL) measurement results of a very good quality GaN sample grown by metalorganic chemical vapor deposition (MOCVD) are reported. The temperature dependences of peak position, emission intensity, and the full width at half maximum (FWHM) of free-exciton (FX) A and B are presented. Our results show the fast thermal quenching of FX transition intensities and predominantly acoustic phonon scattering of emission line broadening. The transition-energy-shift following the Varshni's empirical equation, and by using it to fit the data, E$\_$A1/(T) = 3.4861 eV -6.046 $\times$ 10$\^$-4/T$^2$ (620.3+ T) eV, E$\_$B1/(T) = 3.4928 eV -4.777 $\times$ 10$\^$-4/T$^2$ / (408.2+ T) eV and E$\_$A2/ = 3.4991 eV -4.426 $\times$ 10$\^$-4/ T$^2$ / (430.6+ T) eV for A(n=1), B(n=1), and A(n=2) are obtained respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.232.2-232.2
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• 2014

Since its discovery in 2004, graphene, a sp2-hybridized 2-Dimension carbon material, has drawn enormous attention. A variety of approaches have been attempted, such as epitaxial growth from silicon carbide, chemical reduction of graphene oxide and CVD. Among these approaches, the CVD process takes great attention due to its guarantee of high quality and large scale with high yield on various transition metals. After synthesis of graphene on metal substrate, the subsequent transfer process is needed to transfer graphene onto various target substrates, such as bubbling transfer, renewable epoxy transfer and wet etching transfer. However, those transfer processes are hard to control and inevitably induce defects to graphene film. Especially for wet etching transfer, the metal substrate is totally etched away, which is horrendous resources wasting, time consuming, and unsuitable for industry production. Thus, our group develops one-step process to directly grow graphene on glass substrate in plasma enhanced chemical vapor deposition (PECVD). Copper foil is used as catalyst to enhance the growth of graphene, as well as a temperature shield to provide relatively low temperature to glass substrate. The effect of growth time is reported that longer growth time will provide lower sheet resistance and higher VSG flakes. The VSG with conductivity of $800{\Omega}/sq$ and thickness of 270 nm grown on glass substrate can be obtained under 12 min growing time. The morphology is clearly showed by SEM image and Raman spectra that VSG film is composed of base layer of amorphous carbon and vertically arranged graphene flakes.

• 한국식품과학회지
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• 제35권1호
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• pp.144-148
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• 2003

약초 당귀의 원산지를 판별하기 위하여 SAW 센서가 내장된 GC로 구축된 시스템을 이용하여 휘발성 성분을 분석하였다. 사용된 시료는 별도의 전처리 과정 없이 분석되어, 30초 이내에 얻어진 hertz 값(Frequency)과 이를 미분하여 표현한 크로마토그램을 $VaporPrint^{TM}$ 이미지 소프트웨어를 사용하여 패턴화하였으며 패턴인식을 통하여 비교한 결과, 수입산 당귀와 국내산 당귀의 패턴이 뚜렷하게 차이를 나타냄으로 원산지 판별을 할 수 있었다.

• 한국재료학회지
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• 제28권5호
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• pp.279-285
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• 2018

Graphene is an interesting material because it has remarkable properties, such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young's modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single- and few-layer growth of graphene is possible using transition metals via a thermal CVD process. In this study, we utilize polystyrene and boron oxide, which are a carbon precursor and a doping source, respectively, for synthesis of pristine graphene and boron doped graphene. We confirm the graphene grown by the polystyrene and the boron oxide by the optical microscope and the Raman spectra. Raman spectra of boron doped graphene is shifted to the right compared with pristine graphene and the crystal quality of boron doped graphene is recovered when the synthesis time is 15 min. Sheet resistance decreases from approximately $2000{\Omega}/sq$ to $300{\Omega}/sq$ with an increasing synthesis time for the boron doped graphene.

• Bulletin of the Korean Chemical Society
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• 제28권4호
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• 반도체디스플레이기술학회지
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• 제16권1호
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• pp.1-5
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

• 한국세라믹학회지
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• 제36권5호
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• pp.504-512
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• 1999

The high-quality carbon nanofibers were prepared by chemical vapor deposition of gas mixtures of CO-H2 and C3H8-H2 over Fe-Cu and Ni-Cu bimetallic catalysts. The yield and structure of carbon nanofiber produced were altered by the change of catalyst composition and reaction temperature. The high yields were obtained around 500$^{\circ}C$ with e-Cu catalyst and around 700-750$^{\circ}C$ with Ni-Cu catalyst and the relatively higher yields were obtained with the bimetallic catalyst containing 50-90% of Ni and Fe respectively in comparison with the pure metals. The carbon nanofibers produced over the Fe-Cu catalyst at around 500$^{\circ}C$ with the maximum yields had the highest surface ares of 160-200 m2/g around 650$^{\circ}C$ which was slightly lower than the temperature for maximum yields. In order to examine the characteristics of carbon nanofibers as catalyst support Ni and Co metals were supporte on the carbon nanofibers and CO hydrogenation reaction was performed with the catalysts. The particle size distribution of Ni and Co supported over the carbon nanofibers were 6-15 nm and the CO hydrogenation reaction rate with the carbon-nanofiber supported catalysts was much higher than that over the other supports.

• Bulletin of the Korean Chemical Society
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• 제31권12호
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• pp.3697-3702
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• 2010

We demonstrate that vertically aligned carbon nanotubes can be synthesized directly on tantalum substrate via water-assisted chemical vapor deposition and evaluate their properties as electrochemical capacitors. The mean diameter of the carbon nanotubes was $7.1{\pm}1.5\;nm$, and 70% of them had double walls. The intensity ratio of G-band to D-band in Raman spectra was as high as 5, indicating good quality of the carbon nanotubes. Owing to the alignment and low equivalent series resistance, the carbon nanotube based supercapacitors showed good rate performance. Rectangular shape of cyclic voltammogram was maintained even at the scan rate of > 1 V/s in 1 M sulfuric acid aqueous solution. Specific capacitance was well-retained (~94%) even when the discharging current density dramatically increased up to 145 A/g. Consequently, specific power as high as 60 kW/kg was obtained from as-grown carbon nanotubes in aqueous solution. Maximum specific energy of ~20 Wh/kg was obtained when carbon nanotubes were electrochemically oxidized and operated in organic solution. Demonstration of direct synthesis of carbon nanotubes on tantalum current collectors and their applications as supercapacitors could be an invaluable basis for fabrication of high performance carbon nanotube supercapacitors.