• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.71-73
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• 1995

In this work, we synthsized GaN powders by the direct reactions of Ga with NH$_3$at the temperature range of 950∼1150$^{\circ}C$ and we growth the GaN thin films on Si and sapphire substrates using the synthesized GaN powders by the vapor phase epitaxy method. The synthesized powder had hexagonal crystal structures with lattice constants of a$\sub$0/=3.1895${\AA}$, c$\sub$0/=5.18394${\AA}$. The reaction rates of GaN were increased with both reaction time and temperature, however it did not depends on the flow rates of NH$_3$. The island type GaN crystals were grown on (0001) sapphire substrates and fast lateral growth of GaN on (111) Si substrate than sapphire was observed in our experiments.

• Asian Journal of Atmospheric Environment
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• 제9권2호
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• pp.158-164
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• 2015

The estimation of the concentration of hydroxyl radical (OH) in the atmosphere is essential to build atmospheric models and to understand the mechanisms of the reactions involved in OH. Although water vapor is one of the most abundant species in the troposphere, only a few studies have been performed for the reaction of OH and water vapor. Here I demonstrate an ab initio study on the complex forming reation of OH with $H_2O$ in the gas phase performed based on density functional theory to calculate the reaction rate and the energy states of the reactant and the OH-$H_2O$ complex. The structure of the complex, which belongs to the Cs point group, was optimized at global minima. The transition state was not found at the B3LYP and MP2 levels of theory. Rate constants of the forward and the reverse reactions were calculated as $1.1{\times}10^{-16}cm^3\;molecule^{-1}\;s^{-1}$ and $5.3{\times}10^9\;s^{-1}$, respectively. The extremely slow rates of complex forming reaction and the resulting hydrogen atom exchange reaction of OH and $H_2O$, which are consistent with experimentally determined values, imply a negligible possibility of a change in OH reactivity through the title reaction.

• 한국표면공학회지
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• 제23권2호
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• pp.1-10
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• 1990

Metal-Organic Vapor Phase Epitaxy (MOVPE) is an epitaxial process utilizaing ane or more of organometallice as reactnte to grow compound semicond semiconductror layers. MOVPE is basically a cold wall process in which reactants are delivered without reacting with each other to the heated substrate where reactants are thermally decomposed to from compound semiconductors through chemical reaction. Since reactants are delivered as gas phase and the formation of the single crystal compunds depends on the thermal decomposition of the reactants, details of MOVPE relies on the hydrodynamics and pyroltsis and chemical reation of reactants inside on reaction chamber. It has been demonstrated that MOVPE is capable of growing virtually all of the III-V, II-VI and IV-VI compound semiconductrs, fabricating ultrathin epilayers, for ming abrupt hetrointerfaces with monolayer transition width, and is suitable for multi-wafer operation yilding a high throghtput. Overiew of reactror componts and layer, characteristics, and status of MOVPE are discussed.

• 한국세라믹학회지
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• 제23권1호
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• pp.33-43
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• 1986

The synthesis of high-purity AlN by a vapor-phase reaction was investigated using the $NH_3-AlCl_3-H_2$ reacting system. The theoretical yields of AlN were determined from th thermodynamic equilibrium composi-tions. It was shown that the yields above 90% could by obtained even in the range of relatively low temper-ature of 600-1200K. The reaction temperature and the initial amounts/ratios of the reacting gases showed significant effects on the yields but the total pressure did not. The experimental results showed that a high-purity AlN having a needle shape was the only product as a solid phase and its amount produced increased with the reaction temperature. While the degree of agglmera-tion of the synthesized AlN increased with the reaction temperature the size of each particle consisting of the agglomerates was independent of the temperature but grew from 0.09 to 0.115${\mu}{\textrm}{m}$ with the flow rate of NH3. These experimental results were compared with the theoretical aspects for the synthesis of a high-purity AlN.

• 한국세라믹학회지
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• 제34권12호
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• pp.1199-1204
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• 1997

SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.235-239
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• 1998

Ultrafine $SnO_2$ powder was prepared by the diffusion mixing gas-phase reaction of $SnCl_4$(g) and water vapor. The effects of reaction variables, such as the chloride partial pressure, the reaction temperature, and the residence time is the reactor, on the powder size were examined systematically. Calculated concentration and distribution of chemical species, using the Burke-Schumann diffusion mixing model, were compared with the experimetal results. The effects of the reaction variables on the powder size were also discussed qualitatively.

• 한국재료학회지
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• 제12권4호
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• pp.304-307
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• 2002

A zinc oxide (ZnO) single crystal was used as a substrate in the hydride vapor-phase epitaxy (HVPE) growth of GaN and the structural and optical properties of GaN layer were characterized by x- ray diffraction, transmission electron microscopy, secondary ion mass spectrometry, and photoluminescence (PL) analysis. Despite a good lattice match and an identical structure, ZnO is not an appropriate substrate for application of HVPE growth of GaN. Thick film could not be grown. The substrate reacted with process gases and Ga, being unstable at high temperatures. The crystallinity of ZnO substrate deteriorated seriously with growth time, and a thin alloy layer formed at the growth interface due to the reaction between ZnO and GaN. The PL from a GaN layer demonstrated the impurity contamination during growth possibly due to the out-diffusion from the substrate.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.625-626
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• 2006

In the present study, the focus is on the synthesis of nanosized WC powder by the chemical vapor condensation proces. The synthesized W-C system powder by the CVC process shows W2C, W, WO3 phases and can not shows WC phase. After recarburization heat treatment under mixture gas atmosphere of argon and hydrogen gases, the synthesized W-C system powder fully transformed to the pure WC. The synthesized WC powder after recarburization heat treatment has an average particle size of 20 nm. The nano-sized WC powder can be prepared by the combination of the CVC process and heat treatment methods.

• 유체기계공업학회:학술대회논문집
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• 유체기계공업학회 2005년도 연구개발 발표회 논문집
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• pp.759-764
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• 2005

In this paper, numerical analysis of hydrogen recycle system has been conducted in order to enhance the efficiency of automotive fuel cell. Generally, the excess hydrogen is provided in the automotive fuel cell. Since the non-reaction hydrogen reduces automotive fuel cell efficiency, reuse of the non-reaction hydrogen can be helpful to improve the fuel cell performance. In case of PEM FC, the water vapor is provided to hydrogen from the cathode so that the mixture experiences phase change depending on the changes of pressure and temperature. The internal flow of the mixture in the hydrogen recirculation system of fuel cell was investigated for real flow conditions. The variation of performance, properties and mass fractions of mixture, hydrogen and water-vapor were investigated. This study was performed based on 80KW level automotive fuel cell's recycling system.

• 한국세라믹학회지
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• 제32권1호
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• pp.37-44
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• 1995

TiO2 fine powders were synthesized using oxygenolysis and hydrolysis reaction of TiCl4 vapor in gas phase. The TiO2 powder synthesized showed morphological differences depending on reaction system as follows: TiCl4-O2 reaction system produced the monosized particles having polyhedral shape with well-defined crystal planes and the particles did not agglomerate into secondary particles. TiCl4-H2O reaction system, whereas, produced the spherical secondary particles which consisted of fine primary particles. Other powder characteristics such as particle size, impurity content and rutile content are also reported in this study.