• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.42-45
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• 1992

The poly silicon thin films were prepared by solid phase crystallization at 600$^{\circ}C$ of amorphous silicon films deposited on Corning 7059 glass and (100) silicon wafer with thermally grown SiO$_2$substrate by plasma enhanced chemical vapor deposition with varying rf power, deposition temperature, total flow rate. Crystallization time, microstructure, absorption coefficients were investigated by RAMAN, XRD analysis and UV transmittance measurement. Crystallization time of amorphous silicon films was increased with increasing rf power, decreasing deposition temperature and decreasing total flow rate.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.173-173
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• 2003

Nanowire와 nanorod 같은 1차원의 반도체 재료는 디멘젼과 크기와 물리적 특성과의 관계 등을 연구하는데 중요한 역할을 하며 laser ablation, arc discharge, chemical vapor depostion, vapor phase transport Process와 solution등의 방법으로 성공적으로 합성되었다. ZnO 는 3.37eV의 넓은 밴드갭과 다른 넓은 밴드갭 재료에 비해 높은 exciton bindng energy (60meV)를 가지며 UV LED, laser diode에 적용하기 유리하고 최근 디스플레나 나노 광전소자로서의 가능성 이 대두되면서 최근 이에 관한 연구가 증가하고 있다. 본 연구에서는 열적탄소환원법(carbothermal reduction process)으로 ZnO와 graphite 분말을 1:1 중량비로 혼합한 분말을 90$0^{\circ}C$, 100$0^{\circ}C$에서 air 분위기에서 20분간 반응 후 로 내에서 냉각 하였다. 직경 이 50nm-1000nm, 길이가 수 미크론인 내부 결함이 전혀 없는 육각형 단결정의 nanowire가 합성되었고 XRD, FE-SEM과 TEM으로 조성 및 형상, 내부구조를 분석하였다. 합성된 ZnO nanowire는 직경 이 변하는 부분에서 성장방향으로의 계단을 형성하였고 이는 layer by layer 방법으로 nanowire가 성장한다는 것을 나타낸다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.151-152
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• 2009

We coated $TiO_2$ thin films on particles by a rotating cylindrical plasma chemical vapor deposition (PCVD) process and investigated the effects of various process variables on the morphology and growth of thin films. The polypropylene (PP) particles were rotated with the cylindrical PCVD reactor and they were coated with $TiO_2$ thin films uniformly by the deposition of thin mm precursors in the gas phase. The $TiO_2$ thin films were coated on the PP particles uniformly and the thickness of thin films almost proportional to the deposition time. The $TiO_2$ thin films grew more quickly on the PP particles with increasing rotation speed of the reactor. This study shows that a rotating cylindrical PCVD reactor can be a good method to coat high-quality $TiO_2$ thin films uniformly on particles.

• 한국진공학회지
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• 제5권3호
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• pp.206-212
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• 1996

저압MOCVD 방법을 이용하여 76 Torr에서 $In_{1-x}Ga_xAs$ 에피층을 성장하였다. 성장온도에 따른 성장속도의 변화는 크지 않았으며, 격자불일치와 성장온도, $AsH_3/(TMIn+TMGa)$ 비에 따라 표면형상이 변화하는 경향성을 관찰하였다. 깨끗한 byaus을 가지는 $In_{1-x}Ga_xAs$ 에피층의 5K PL 측정을 통하여 2.8meV 반가폭을 가지는 결정성이 좋은 에피가 성장되었음을 확인하였다. 성장온도에 따른 조성의 변화는 크지 않았으며, 고체상에서의 $In_{1-x}Ga_xAs$ 조성은 기체상에서의 원료가스의 확산단계에 의해 결정되었다. 격자불일치와 성장온도가 $In_{1-x}Ga_xAs$ 에피층의 전기적 특성을 결정하는 가장 중요한 변수로 확인되었고, 최적조건에서 성장한 에피층에 대해 상온에서 $8{\times}10^{14}/cm^3$의 전자농도와 11,000$\textrm{cm}^2$/V.sec 의 전자이동도를 얻었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.572-572
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• 2012

Growth of metal oxides on graphene may lead to a better understanding of delicate effects of their growth habits on their underlying physics. The vanadium dioxide ($VO_2$) is well known for its metal-to-insulator transition accompanied by a reversible first order structural phase transition at 340 K. This transition makes $VO_2$ a potentially useful material for applications in electrical and optical devices. We report a successful growth of $VO_2$ nanostructures on a graphene substrate via a vapor-solid transport route. As-grown $VO_2$ nanostructures on graphene were systematically characterized by field emission scanning electron microscopy, x-ray diffraction, Raman spectroscopy, FT-IR spectroscopy and high resolution transmission electron microscopy. These results indicate that the strain between $VO_2$ and graphene layers may be easily controlled by the number of underlying graphene layer. We also found that the strain in-between $VO_2$ and graphene layer affected its metal-to-insulator transition characteristics. This study demonstrates a new way for synthesizing $VO_2$ in a desired phase on the transparent conducting graphene substrate and an easy pathway for controlling metal-to-insulator phase transition via strain.

• 한국세라믹학회지
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• 제29권5호
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• pp.335-340
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• 1992

Undoped PbTiO3 ceramics was successfully prepared by using sol-gel process, which had not been fabricated due to its microcracks created by anisotropic stress during phase transition from cubic to tetragonal phase. Fabrication of undoped PbTiO3 ceramics via sol-gel processing was very much affected by the PbO content of the samples as well as PbO vapor from sintering atmosphere. Excess PbO was found to promote rapid grain growth in PbTiO3 ceramics. After sintering at 1100$^{\circ}C$ average grain size of PbTiO3 ceramics with excess PbO was about 8 times greater than that of stoichiometric composition, which may be due to PbO liquid phase from excess PbO.

• Bulletin of the Korean Chemical Society
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• 제15권1호
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• pp.28-33
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• 1994

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

• 한국세라믹학회지
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• 제39권6호
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• pp.528-534
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• 2002

CaO ceramics were prepared by conventional sintering process and their hydration behaviors were evaluated by measuring weight increment on saturated water vapor pressure at ambient temperature. CaCO$_3$ and limestone were used as CaO source materials and $Al_2$O$_3$, MgO and SiO$_2$ were added as sintering agents. $Al_2$O$_3$ was a liquid phase sintering agent to increase densification and grain growth rates, whereas MgO and SiO$_2$, densification and grain growth inhibitors. Regardless of composition, all of the prepared CaO ceramics showed the improved hydration resistance as bulk density increased. Especially, when bulk density was more than 3.0 g/㎤, there was no weight increment after 120 h of hydration. Therefore, to decrease contact area between CaO and water vapor by increasing bulk density with the $Al_2$O$_3$ sintering additive was effective for the improvement of CaO hydration resistance.

• 통합자연과학논문집
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• 제5권4호
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• pp.233-236
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• 2012

In this study, PEDOT thin films polymerized with Iron(III)tosylate ($Fe(PTS)_3$) and grown on acetic acid-catalyzed 3-aminopropyltriethoxysilane self-assembled monolayer (APS-SAM) surfaces by VPP method have been investigated. PEDOT thin films were synthesized on APS self-assembled $SiO_2$ wafer surface at two different concentrations (20 wt% and 40 wt%) and growth time (3 and 30 minutes), and then they were compared. PEDOT vapour phase-polymerized with 40 wt% $Fe(PTS)_3$ oxidant completely formed a thin film on acetic acid-catalyzed APS-SAM surface while with 20 wt% $Fe(PTS)_3$ did not at all. It means that the oxidant can be uniformly coated on acetic acid-catalyzed APS-SAM surface at the 40 wt% concentration, which gives rise to the uniform growth of PEDOT thin film on it.

• 한국미생물·생명공학회지
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• 제22권4호
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• pp.423-429
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• 1994

A bacterial strain which formed a distinct colony on agar plate containing naphthalene as a vapor phase and grew well ina liquid minimal medium was isolated and identified as Alcaligenes sp. A111. Optimum temperature and pH for the cultivation of Alcaligenes sp. A111 were 30$\cir$C and 7.0, respectively. Cell growth increased dramatically from 12 hours after inoculation and revealed a stationary phase at about 48 hours. Relative growth rate ($\mu$')increased hyperbolically depending on the conceration of naphthalene up to 500 ppm and reached to the maximum value pf 2.8/day, but $\mu$' didn't change within a range of 500~4000 ppm naphthalene. NH$_{4}$Cl or NH$_{4}$NO$_{3}$ was preferrd as a nitrogen source and a P : N ratio by weight og 6 : 1 was favorable to cell growth. Alcaligenes sp. A111 utilized the intermediates of degradation of naphthalene and showed tolerance to benzene, toluene, and octane. therefore, it is suggested that Alcaligenes sp. A111 could be effectively used for the biological treatment of wastewater containing naphthalene in the presence of some aromatic compounds.