• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.11-14
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• 2012

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.2
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• pp.129-135
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• 2011

An ice-making model has been developed and analyzed in this study. The effects of the following on the ice formation on the outer surface of a tube in which a refrigerant flows and boils are numerically investigated: thermal resistance of the refrigerant and thermal resistance of the ice formed on the outer surface of the tube. The ice thickness and related variables are analyzed in the case of the refrigerants R22 and R134a by using the expressions for phase-change heat transfer and boiling heat transfer coefficient. Vapor qualities of the refrigerants range from 0 to 0.8. As a result, up to the first 30 min, the internal convection resistance is higher than the thermal resistance of the ice on the external surface of the tube. However, after about 30 min, the thermal resistance of the ice increases remarkably due to the increase in the ice thickness. Thus, the heat flux to the refrigerant decreases, and further, the refrigerant quality and the boiling heat transfer coefficient also decrease. As the heat transfer coefficient of R22 is higher than that of R134a, the mass of the ice formed when R22 is used is higher than that formed when R134a is used.

• Fire Science and Engineering
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• v.33 no.3
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• pp.51-55
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• 2019

To prevent ozone depletion caused by CFCs, the replacement of Halon with clean agents has been developed in the fire protection field along with refrigerants, detergents, and foaming agents. The alternatives for Halon 1211 have been developed in the portable fire extinguisher area and HCFC-123 is used widely as a clean fire extinguishing agent. The type of expellant gas is important because their own vapor pressure is low. In this study, HCFC-123, HCFC-124, HFC-125, and Novec-1230 were selected as fire extinguishing agents and CO₂, which is expected to improve the fire extinguishing ability, was chosen as the expellant gas. For each agent, experiments changing the agent and CO₂ amount were carried out and HCFC-123 showed a good result, as expected. The extinguisher, HCFC-123 of 1.5 kg, showed the same ability to suppress a class A and B fire as the extinguisher, HCFC-123 of 2.5 kg, which is currently sold on the market. According to this result, the expellant gas has a subsidiary fire extinguish effect. This can reduce the amount of HCFC fire extinguishing agent, which is categorized in the phase-out alternatives, and is a more eco-friendly and economical fire extinguisher than the previous one. This study can also help solve the problems of CO₂ fire extinguishers for class B and C fires, and can be used to extinguish electric and electron facilities fire, which contains large amounts of class A fire combustibles.

• Journal of Soil and Groundwater Environment
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• v.14 no.6
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• pp.87-94
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• 2009

Surfactant-enhanced air sparging (SEAS) was developed to suppress the surface tension of groundwater prior to air sparging resulting in higher air saturation and larger contact area between NAPL and gas during air sparging. Larger contacting interface between NAPL and gas means faster mass transfer of contaminants from NAPL to gas phase. This new technique, however, is limited to relatively volatile contaminants because vaporization is its basic mechanism of mass transfer. In this study, SEAS was tested at an elevated temperature for a semi-volatile n-decane, which is expected not to be a good candidate of SEAS application due to its low vapor pressure at ambient temperature. Three sparging experiments were conducted using 1-dimensional column (5 cm id, 80 cm length) packed with sand; (1) ambient temperature ($23^{\circ}C$), column saturated with distilled water, (2) SEAS at ambient temperature ($23^{\circ}C$), for n-decane contaminated sand, (3) SEAS at elevated temperature ($73^{\circ}C$), for n-decane contaminated sand. Higher air saturation was achieved by SEAS compared to that by air sparging without surfactant application. The n-decane removal efficiency of SEAS at elevated temperature was significantly higher(> 10 times) than that of ambient SEAS. The n-decane concentrations in the gas effluent from column during SEAS at $73^{\circ}C$ are found to be 10 times of those measured at ambient temperature. Thus, SEAS technique can be applied for removal of semi-volatile contaminants provided that an appropriate technique for elevating aquifer temperature is available.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.62-67
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• 2015

The carbon microspheres of a core-shell type were grown by the method of mixed-source hydride vapor phase epitaxy (HVPE). The surface and the cross section of the carbon microsphere grown by a new method were observed by scanning electron microscope (SEM). The characteristics of the carbon microsphere were investigated by X-ray photoelectron spectroscopy (XPS) and a high resolution-transmission electron microscope (HR-TEM). From these measurements, the diameters of carbon sphere were about few hundred micrometers. Furthermore, we show that the carbon microsphere of the core-shell type by mixed-source HVPE method can be grown successfully with the larger size than those of the existing one. This mixed-source HVPE method is proposed a new method for making of carbon microsphere.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.789-794
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• 2002

In this study, nano-sized Si-C-N precursor powders were synthesized by Chemical Vapor Condensation Method(CVC) using TMS(Tetramethylsilane: $Si(CH_3)_4$), $NH_3$ and $H_2$ gases under the various reaction conditions of the reaction temperature, TMS/$NH_3$ ratio and TMS/$H_2$ ratio. XRD and FESEM were used to analysis the crystalline phase and the average particle size of the synthesized powders. It was found that the obtained powders under the considering conditions were all spherical amorphous powder with the particle size of 87∼130 nm. The particle size was decreased as the reaction temperature increased and TMS/$NH_3$ and TMS/$H_2$ ratio decreased. As the results of EA analysis, it was found that the synthesized powders had been formed the powders composed of Si, N, C and H. Through FT-IR results, it was found that the synthesized powders were Si-C-N precursor powders with Si-C, Si-N and C-N bonds.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1202-1207
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• 2003

Using a recently developed Hybric Plasma-Particle Accelerating Impact Deposition (HP-PAID) process, synthesis of nanostructured silicon coatings has been investigated by injecting vapor-phase TEOS (tetraethosysilane, (C$_2$H$\_$5/O)$_4$Si) into an Ar hybrid plasma. The plasma jet with reactants was expanded through nozzle into a deposition chamber, with the pressure dropping from 700 to 10 torr. Ultrafine particles accelerated in the free jet downstream of the nozzle, deposited by an inertial impaction onto a temperature controlled substrate. By using this process, nanostructured amorphous silicon coatings with grain size smaller than 10 nm could be synthesized. These samples were annealed in an Ar and crystallized at 900$^{\circ}C$ for 30 min. TEM analysis showed that the annealed coatings were also composed of nanoparticles smaller than 10 nm, which showed a good consistency that the average grain size of 7 nm was also estimated from a peak shift of 2.39 cm$\^$-1/ and Full Width at Half Maximum (FWHM) 5.92 cm$\^$-1/ of Raman analysis. The noteworthy is that a strong PL peak at 398 nm was also obtained for this sample, which indicates that the deposited coatings also contained 3∼4 nm nanostructured grains.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.55.2-55
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• 1998

다견정 심리판-거l르마늄(JXlly-SiGe)은 TFT(thin-film transistor)와 갇븐 소자 응용에 있어서 중요한 불칠이다 .. LPCVD (low pressure chemical vapor deposition) 방법으로 비정칠 SiGc (a-SiGe) 박막올 증 착시키고 고상결정화(SPC: solid-phase crystallization)시켜 poly-SiGc옹 얻는 것은 잘 알려져 있다. 그러 나 그러나 PF'||'&'||'pound;VD-SPC 방법올 이용한 poly-SiGc의 제조에 대해서는 아직 두드러지게 연구된 바 없다. 우리단 PF'||'&'||'pound;VD 방법으로 a-SiGc 박막올 증착시키고 고상캘정화시켜 poly-SiGc올 얻었 R며, :~ 결정성, G Gc 농도, 결정핍의 평끌 크기 눔올 XRD (x-ray diffraction) 방법으호 조사하였다. 특히 pr'||'&'||'pound;VD 증착시 가판온도,Gc 함유량 등이 고상화에 미치는 영향에 대해서 조사하였다. P PECVD 장치는 터보펌프콸 사용하여 71저진공이 2xlOlongleftarrow5 Torr에 이르렀다. 가판윤 SiOOO) 웨이퍼륜 사용하고 기판 온도는 약 150- 35()"C 사이에서 변화되었다. 증착가스는 SiH4, GcH4, 112 등흘 썼다. 증착 압력과 r.f 전력용 각각 O.25ToIT와 3W로 일정하게 하였다 .. Gc 함유량(x)은 x x=O.O-O.5 사이에서 변화되었다 .. PECVD모 증착된 SiGc 박막들은 고상결정화를 위해 $\theta$X)"(:: Nz 분위기에서 24시간동안, 혹은 5OO'C에서 4열간 가열되었다. 고상결정화 후 poly-SiGc 박막은 SiGc(Ill), (220), (311) XRD 피크들올 보여주었으며, 각 피 크들은 poly-Si에 비하여 왼쪽으로 Bragg 각이 이동되었고, Vegard’slaw에 의해서 x의 값올 확 인할 수 있었다. 이것온 RBS 결과와 열치하였다. 약 150-350'C 사이에서 변화된 기판온도의 범위 에서 증착온도가 낮올수콕 견정립의 크기는 대체로 증가하는 것으로 나타났다 .. XHD로 추정된 형 균 결정립의 크기는 최대 약 3$\alpha$1m 정도였다. 또한 같끈 샘플뜰에 대해서 기판온도가 낮올수록 증착속도가 증가함옴 확인하였다 .. Gc 함유량이 x=O.1에서 x=O.5로 증가함에 따라서도 결정립의 크기와 SiGc 증착속도는 증가하는 것으로 나타났다 .. Hwang [1] , Kim[2] 둥의 연구자들은 Gc 함유 량이 증가함에 따라 결정 립 크기가 캄소하는 것올 보고하였으냐, Tsai [3] 둥은 반대의 결과플 보 고하고 Ge 힘유량의 증가시 결정립 크기의 증가에 대해 Gc의 Si보다 낮은 융점 (melting point) 올 강조한 바 있다. 결정립 크기의 증가는 대체로 SiGe 중착속도의 증가와도 관련이 있음올 볼 때, poly-SiGc의 경우에도 polv-Si의 고상화에서와 같이 증착속도가 빠를수록 최종적언 결정럽의 크기가 커지는 것으로 이해될 수도 있다 .. PECVD 증착시 증착속도의 증가는 증착된 박딱에서의 무켈서도를 증 가시킬 수 있음올 고려하면, 이라한 결파플온 p이y-SiGc의 고상결정화에서도 ploy-Si의 고상결정 화에서와 마찬가지로 초기 박막에서의 구조직 무절서도가 클수록, 고상결정화 후 결정 립의 크기 가 커칠 수 있음올 보여준다고 생각휠 수 있다,

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.723-732
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• 1996

Cu films were deposited by chemical wapor deposition on the as-received substrates (TiN/Si) and three kinds of Cu-seeded substrates (Cu/TiN/Si) which had seeding layer in the thick ness of 5 ${\AA}$ and 130 ${\AA}$ coated by ICB(Ionized Cluster Beam) method. The effect of Cu seeding layers on the growth rate, crystallinity, grain size uniformity and film adhesion strength of final CVD-Cu films was investigated by scanning eletron microscopy(SEM), X-ray diffractometry and scratch test. The growth rate was found to incresase somewhat in the case of ICB-seeding. The XRD patterns of the Cu films on the as-received substrate and ICB Cu-seeded substrates exhibited the diffraction peaks corresponding to FCC phase, but the peak intensity ratio($I_{111}/I_{200}$) of Cu films deposited on the ICB Cu-seeded substrates increased compared with that of Cu films on the as-received substrate. The resistivity of final Cu film on 40 ${\AA}$ seeded substrate was observed as the lowest value, 2.42 $\mu\Omega\cdot$cm compared with other Cu films. In adhesion test, as the seeding thickness increased from zero to 130 ${\AA}$, the adhesion strength increased from 21N to 27N.