• Clean Technology
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• v.4 no.1
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• pp.68-75
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• 1998

An innovative wafer drying system was developed using Isopropyl alcohol (IPA) and nitrogen carrier gas in order to replace the commercial conventional drying system which was a non-environmentally friendly system. This system was designed as following ; the IPA evaporation chamber and the process chamber were separated to increase drying efficiency, and the carrier gas with the IPA vapor was delivered into the process chamber. It was investigated that the IPA concentration was the most important factor to operate the system. The optimum concentration was found to be 2.4 ml IPA/N2 1. In addition, the optimum flow rate of the nitrogen gas were maintained more than 60 l/min.

• Journal of Power System Engineering
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• v.11 no.1
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• pp.63-69
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• 2007

The evaporation pressure drop of $CO_2$ (R-744) in a horizontal tube was investigated experimentally. The main components of the refrigerant loop are a receiver, a variable-speed pump, a mass flow meter, a pre-heater and an evaporator (test section). The test section consists of a smooth, horizontal stainless steel tube of 4.57 mm inner diameter. The experiments were conducted at saturation temperature of $-5^{\circ}C\;to\;5^{\circ}C$, and heat flux of 10 to $40kW/m^2$. The test results showed that the evaporation pressure drop of $CO_2$ are highly dependent on the vapor quality, heat flux and saturation temperature. The measured pressure drop during the evaporation process of $CO_2$ increases with increased mass flux, and decreased saturation temperature. The evaporation pressure drop of $CO_2$ is much lower than that of R 22. In comparison with test results and existing correlations, the best fit of the present experimental data is obtained with the previous correlation. But existing correlations failed to predict the evaporation pressure drop of $CO_2$. Therefore, it is necessary to develop reliable and accurate predictions determining the evaporation pressure drop of $CO_2$ in a horizontal tube.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.614-614
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• 2013

The effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. A synthetic method to produce such large area graphene films with precise thickness from mono- to few-layer would be ideal for chemists and physicists to explore the promising electronic applications of these materials. Here, large-area uniform mono-, bi-, and few-layer graphene films were successfully synthesized on copper surface in selective growth windows, with a finely tuned total pressure and $CH_4$/$H_{2gas}$ ratio. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.

• Journal of the Korean institute of surface engineering
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• v.39 no.2
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• pp.82-86
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• 2006

Diamond films were deposited on 10.0$\times$10.0$mm^2$ pretreated (100) Si substrate using $CH_4$, $H_2$ and $O_2$ source gases in a horizontal-type microwave plasma enhanced chemical vapor deposition system. We introduced a cyclic on/off modulation of $CH_4$ and/or $O_2$ flows is a function of the reaction time during the initial deposition stage. Surface morphology and diamond quality of the films were investigated as a function of the different cyclic modulation process of the source gases flows: For the enhancement of the nucleation density, there is an optimal process for the incorporation of oxygen. Diamond qualities of the films were improved by introducing oxygen gas during the initial deposition stage.

• Journal of the Korean Geophysical Society
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• v.8 no.4
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• pp.201-205
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• 2005

Turbulent fluxes of heat, water vapor, and CO2 have been measured since August, 2003 at Dasan Station (78o 55’ N, 11o50’E) in the Arctic. These data can allow us to better understand the interactions between the Polar ecosystems and the atmosphere together with those at King Sejong Station in the Antarctic. Due to the buildings and measurement platforms around the flux tower, it is required to evaluate how they influence measured flux data. By using one-year turbulence statistics data and footprint model, flux footprint climatology was analyzed together with data availability. The upwind distance of source area ranged from 150 to 300 m, where the buildings and measurement platforms existed. However, flow distortion due to them may be not a major factor to reduce the data availability significantly. Based on, the dominant wind direction of SW and footprint climatology, the location of flux tower is considered suitable for flux measurement.

• The KSFM Journal of Fluid Machinery
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• v.20 no.2
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• pp.75-81
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• 2017

This paper presents a numerical investigation on the local hydraulic cavitation phenomena of water resulting from the rotor with high rotational speed in the hydraulic cavitation heat generator. The numerical simulation utilizes the standard k-epsilon turbulence model, the mixture multiphase model and the Schnerr-Sauer cavitation model to simulate the complex cavitation phenomena in the generator. For exploring the efficient shape of the dimples on the rotor to causing cavitation phenomena artificially, the pressure distributions and the volume fractions of the vapor on the rotor are investigated respectively about different shapes of the rotor in the generator. The optimum shape of the dimple to causing cavitation phenomena in the selected shapes is obtained by the means of the numerical simulation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.303-308
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides(SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluninescence(PL), scanning electron microscopy(SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_{3}H_{8}\;0.2\;sccm\;&\;SiH_{4}\;0.3\;sccm$. The growth rate of epilayers was about $1.0\mu\textrm{m}/h$ in the above growth condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.1-4
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• 2000

Thin films of hydrogenated amorphous silicon carbide compounds ($a-Si_{x}C_{1-x}:H$) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane (SiH$_4$) and methane ($CH_4$) as the gas precursors at 1 Torr and at a low substrate temperature ($250^{\circ}C$). The gas flow rate was changed with the other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of $a-Si_{x}C_{1-x}:H$films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.657-662
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• 2003

This paper presents a new fabrication method of selective SiGe epitaxial growth at 650 $^{\circ}C$ on (100) silicon wafer with oxide patterns by reduced pressure chemical vapor deposition. The new method is characterized by a cyclic process, which is composed of two parts: initially, selective SiGe epitaxy layer is grown on exposed bare silicon during a short incubation time by SiH$_4$/GeH$_4$/HCl/H$_2$system and followed etching step is achieved to remove the SiGe nuclei on oxide by HCl/H$_2$system without source gas flow. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO$_2$. In addition, we confirmed that the incubation period is regenerated after etching step, so it is possible to grow thick SiGe epitaxial layer sustaining the selectivity. The effect of the addition of HCl and dopants incorporation was investigated.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.11a
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• pp.741-747
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• 2010

Vent-relief valve performed as a safety-valve combination for liquid propellant feeding system of space launch vehicle, which can vent the vaporized oxygen vapor during both filling cryogenic oxidizer into tank and flight. We have designed vent-relief model by using the AMESim code to predict dynamic characteristics and simulate pneumatic behavior of valve. To validate valve model we have compared by opening time in vent model, and opening/closing pressure by mathematical methods and improved the accuracy through numerical flow analysis by using FLUENT code. In this study, we had verified design parameters and analyzed operating performances. We can use these analysis results to precedent development study on propellant feeding system of Korea Space Launch Vehicle.