• Carbon letters
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• v.15 no.3
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• pp.203-209
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• 2014

The adsorption of volatile organic compounds (VOCs) was carried out using an activated carbon fiber (ACF) filter in an automobile. The adsorption capacities of formaldehyde, toluene, and benzene on an ACF filter were far better than those of a polypropylene (PP) mat filter and combined (PP+activated carbon) mat filter by batch adsorption in a gas bag. In a continuous flow of air containing toluene vapor through an ACF packed bed, the breakpoint time was very long, the length of the unused bed was short, and sharp "S" -type breakthrough curve was plotted soon after breakpoint, showing a narrow mass transfer zone of toluene on the ACF. The adsorption amount of toluene on the ACF filter was proportional to the specific surface area of the ACF; however, the development of mesopores 2-5 nm in size on the ACF was very effective with regard to the adsorption of toluene. The ACF air clarifier filter is strongly recommended to remove VOCs in newly produced automobiles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.148-148
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• 2008

Low-k dielectric materials are an alternative plan to improve the signal propagation delay, crosstalk, dynamic power consumption due to resistance and parasitic capacitance generated the decrease of device size. Now, various materials is studied for the next generation. Diethoxymethlysiliane (DEMS) precursor using this study has two ethoxy groups along with one methyl group attached to the silicon atoms. SiCOH thin films were deposited on p-type Si(100) substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) using DEMS. In this study, we studied the effect of oxygen($O_2$) flow rate for DEMS to characteristics of thin films. The characteristics of thin films deposited using DEMS and $O_2$ evaluated through refractive index, dielectric constant(k), surface roughness, I-V(MIM:Al / SiCOH / Ag), C-V(MIM), deposition rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.115-118
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• 2017

Highly photosensitive and wide bandgap amorphous silicon oxide (a-$SiO_x$:H) films were developed at low temperature ranges ($100{\sim}150^{\circ}C$) with employing plasma-enhanced chemical vapor deposition by optimizing $H_2/SiH_4$ gas ratio and $CO_2$ flow. Photosensitivity more than $10^5$ and wide bandgap (1.81~1.85 eV) properties were used for making the a-$SiO_x$:H thin film solar cells, which exhibited a high open circuit voltage of 0.987 V at the substrate temperature of $100^{\circ}C$. In addition, a power conversion efficiency of 6.87% for the cell could be improved up to 7.77% by employing a new n-type nc-$SiO_x$:H/ZnO:Al/Ag triple back-reflector that offers better short circuit currents in the thin film photovoltaic devices.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.11a
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• pp.240-241
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• 2005

The experiments were conducted without oil in a closed refrigerant loop which was driven by a magnetic gear pump. The main components of the refrigerant loop are a receiver, a variable-speed pump, a mass flow meter, a pre-heater and evaporator(test section). The test section was made of a horizontal stainless steel tube with the inner diameter of 4.57 mm, and length of 4 m. The experiments were conducted at mass flux of 200 to 700 kg/$m^2s$, saturation temperature of 0$^{circ}C$ to 20$^{circ}C$, and heat flux of 10 to 30 kW/$m^2$. The test results showed the evaporation heat transfer of $CO_2$ has great effect on more nucleate boiling than convective boiling. The evaporation heat transfer coefficients of $CO_2$ are highly dependent on the vapor quality, heat flux and saturation temperature. In comparison with test results and existing correlations, correlations failed to predict the evaporation heat transfer coefficient of $CO_2$, therefore, it is necessary to develop reliable and accurate predictions determining the evaporation heat transfer coefficient of $CO_2$ in a horizontal tube.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1548-1553
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• 2003

An experimental study of the absorption process of water vapor into a lithium bromide solution was performed. For the purpose of development of high performance absorption chiller/hater utilizing lithium bromide solution as working fluid, it is the most effective to improve the performance of absorber with the largest heat transfer area of the four heat exchangers. The experimental apparatus was composed of a plate type absorber which can increase the heat exchange area per unit volume to investigate more detail characteristics instead of the conventional type, horizontal tube bundle type. The size of plate absorbers were made for $0.4m{\times}0.6m$ and the design object of a refrigeration capacity was lRT. In this experiment, three kind plate absorbers which were flat plate, dimple plate and groove plate were used. The results were less than the design object values, that is, the refrigeration capacity was about $0.3{\sim}0.4RT$ and the overall heat transfer coefficient was $500{\sim}600kcal/m^2h^{\circ}C$ at the standard conditions.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.04a
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• pp.146-150
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• 1996

A thermal micro actualtor has been fabricated using surface micromachining techniques. It consists of doped ploysilicon as a moving part and TEOS(Tetra Ethyl Ortho Silicate) as a sacrificial layer. The polysilicon was annealed for the reduction of residual stress which is the main cause to its deformation such as bending and buckling. And the newly developed HF VPE(vapor phase etching)process was also used as an effective release method for the elimination of sacrificaial layer. With noliquid involved during any of the steps for relasing, unlike other reported relase techniques, the HF VPE pocess has produced polysilicon microstructures with virtually no process-induced stiction problem. The actuation is incured by the thermal expasion due to current flow in active polysilicon cantilever, which motion is amplified bylever mechanism. The thickness of pllysilicon is 2 .mu. m and the length of active and passive polysilicon cantilever are 500 .mu. m, respectively. The moving distance of polysilicon actuator was experimentally conformed as large as 21 .mu. m at the input voltage level of 10 V and 50Hz square wave. These micro actuator technology can be utilized for the fabrication of MEMS (microlectromechanical system) such as microrelay, which requires large displacement or contact force but relatively slow response.

• Journal of the Korean Society for Nondestructive Testing
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• v.26 no.3
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• pp.169-173
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• 2006

In-service diagnoses of pipeline facilities are important for a systematic maintenance of them. Field applications by using sealed gamma-ray sources $(^{60}Co,\;^{137}Cs)$ were performed to identify the heterogeneous zone in the pipelines of a distillation tower and a flare stack respectively. From the results, the heterogeneous zones in the pipelines were successfully identified. In the case of the pipeline connected to the distillation tower, a vapor pocket was detected in the fluid under hydrodynamic conditions, which could explain the reason for a decrease of the flow rate. In another case, an area with some amount of catalyst deposits was found at the bottom of the gas pipeline which was connected to the flare stack. And these findings provided important information for the process operators. Diagnosis technique by using gamma radiation sources has been proven to be an effective and reliable method for providing information on a media distribution in a facility.

• Journal of Power System Engineering
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• v.12 no.4
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• pp.26-31
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• 2008

The evaporation heat transfer coefficient and pressure drop of R-22 and R-407C in a small diameter copper tube were investigated experimentally. The main components of the refrigerant loop are a receiver, a compressor, a mass flow mete, a condense and a double pipe type evaporate (test section). The test section consists of a smooth copper tube of 4.3 mm inner diameter. The refrigerant mass fluxes were varied from 100 to $300[kg/m^{2}s]$ and the saturation temperature of evaporator were $5[^{\circ}C]$. The evaporation heat transfer coefficients of R-22 and R-407C increase with the Increase in mass flux and vapor quality. The evaporation heat transfer coefficient of R-22 is about $7.3\sim47.1%$ higher than that of R-407C. The evaporation pressure drop of R-22 and R-407C increase with the increase of mass flux. The pressure drop of R-22 is about $8\sim20%$ higher than that of R-407C.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.4
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• pp.135-140
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• 2005

Thermal-fluid analysis was performed to understand the thermal behavior in the horizontal CVD reactor thereby to design a susceptor which has a uniform deposition rate during silicon EPI growing. Four different types of susceptor designs, standard (no hole susceptor), hole $\sharp$1 (240 mm), hole $\sharp$2 (150 mm) and hole $\sharp$3 (60 mm), were simulated by CFD (Computational Fluid Dynamics) tool. Temperature, gas flow, deposition rate and growth rate were calculated and analyzed. The degree of flatness of EPI wafer loaded on the susceptor was computed in terms of silicon growth rate. The simulation results show that the temperature and thermal distribution in the wafer are greatly dependent on inner diameter of hole susceptor and demonstrate that the introduction of hole in the susceptor can degrade wafer flatness. Maximum temperature difference appeared around holes. As the diameter of the hole decreases, flatness of the wafer becomes poor. Among the threes types of susceptors with the hole, optimal design which resulted a good uniform flatness ($5\%$) was obtained when using hole $\sharp$1.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.45-51
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• 2004

We have proposed a new shallow trench isolation (STI) process using flowable oxide (F-oxide) chemical vapor deposition (CVD) for DRAM application and it was successfully developed. The combination of F-oxide CVD and HDP CVD is thought to be the superior STI gap-filling process for next generation DRAM fabrication because F-oxide not only improves STI gap-filling capability, but also the reduced local stress by F-oxide in narrow trenches leads to decrease in junction leakage and gate induced drain leakage (GIDL) current. Finally, this process increased data retention time of DRAM compared to HDP STI. However, a serious failure occurred by symphonizing its structural dependency of deposited thickness with poor resistance against HF chemicals. It could be suppressed by reducing the flow time during F-oxide deposition. It was investigated collectively in terms of device yield. In conclusion, the combination of F-oxide and HDP oxide is the very promising technology for STI gap filling process of sub-100nm DRAM technology.