• Tribology and Lubricants
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• v.34 no.5
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• pp.175-182
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• 2018

Accumulation of coal ash at the boiler wall reduces combustion and fuel efficiency. The design of a wall blower is important to effectively remove coal ash. We present numerical results for the removal of coal ash from boiler walls of domestic coal-fired power plants, associated with the computational fluid dynamics for the flow from spray nozzle to boiler wall. The numerical model simulates an erosion process in which the multiphase fluid comprising saturated vapor and fluid water is sprayed from the nozzle, and the water particles impact the boiler wall. We adopt the Finnie erosion model for water particles. We obtain the erosion rate density as a function of nozzle angle and its injection angle. As excessive coal ash removal usually induces damage to the boiler wall, the removal operation typically focuses on a large area with uniform depth rather than the maximum removal of coal ash at a specific location. In order to estimate the removal performance of the wall blower nozzle considering several functionality and reliability factors, we evaluate the optimal injection and nozzle angles with respect to the biggest cumulative and highest erosion rates, as well as the widest range and lowest standard deviation of the erosion rate distribution.

• Journal of the Korean Applied Science and Technology
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• v.17 no.2
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• pp.132-138
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• 2000

Excess enthalpies ($H^{E}$) were measured by isothermal flow calorimetry for the nonionic amphiphile 2-butoxyethanol/water mixtures at 10 different temperatures (48.5 to $70^{\circ}C$) around and above the lower consolute solution temperature, $T_{lc}$. $H^{E}$ exhibits U-shape for the binary mixtures, and is large and negative which reflects substantial interaction between two chemical species. When the commonly used, semi-empirical Redlich-Kister (RK) polynomials were fitted to the measured $H^{E}$, plots of $H^{E}$ vs. weight fraction provided more accurate fitting with fewer parameters than conventionally drawn $H^{E}$ vs. mole fraction plots. This was due to the enhanced symmetry of $H^{E}$ vs. weight fraction plots. Using the fitted Redlich-Kister polynomials and the Gibbs-Helmholtz relation, temperature dependence of the activity coefficients were found and compared to the values determined from vapor-liquid equilibria. The activity coefficients were in the range of one to three, indicating that the binary system deviates from ideality but not substantially. They slightly depended on temperature and the temperature effect was equivalent to 10 % change in the activity coefficients.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.6
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• pp.369-374
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• 2010

A refrigerant-subcooling refrigeration system consisted of a typical single vapor-compression refrigeration cycle, a subcooler, and an ice storage tank. The degree of subcooling at the exit of the condenser can be increased by the heat exchange between the subcooler and the ice storage tank. The cold heat in the ice storage tank was stored by using the refrigeration cycle during night time and then used to absorb the heat from the subcooler during daytime. The performance of the refrigerant-subcooling refrigeration system was measured by varying the degree of subcooling. In addition, the performance characteristics of the present system were compared with those of a conventional refrigeration system. The mass flow rate of the present system was higher than that of the conventional system due to the increase in the degree of subcooling. Generally, the refrigerant-subcooling system showed superior performance to the conventional refrigeration system.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.39.2-39.2
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• 2011

With the steady increase in the demand for flexible devices, mainly in display panels, researchers have focused on finding a novel material that have excellent electrical properties even when it is bended or stretched, along with superior mechanical and thermal properties. Graphene, a single-layered two-dimensional carbon lattice, has recently attracted tremendous research interest in this respect. However, the limitations in the growing method of graphene, mainly chemical vapor deposition on transition metal catalysts, has posed severe problems in terms of device integration, due to the laborious transfer process that may damage and contaminate the graphene layer. In addition, to lower the overall cost, a fabrication technique that supports low temperature and low vacuum is required, which is the main reason why solution-based process for graphene layer deposition has become the hot issue. Nonetheless, a direct deposition method of large area, few-layered, and uniform graphene layers has not been reported yet, along with a convenient method of patterning them. Here, we report an evaporation-induced technique for directly depositing few layers of graphene nanosheets with excellent uniformity and thickness controllability on any substrate. The printed graphene nanosheets can be patterned into desired shapes and structures, which can be directly applicable as flexible and transparent electrode. To illustrate such potential, the transport properties and resistivity of the deposited graphene layers have been investigated according to their thickness. The induced internal flow of the graphene solution during tis evaporation allows uniform deposition with which its thickness, and thus resistivity can be tuned by controlling the composition ratio of the solute and solvent.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2006.11a
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• pp.175-178
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• 2006

A numerical study for spray combustion of fluctuated fuel and oxidizer droplets injected into combustion chamber has been conducted for the analysis of spray combustion considering characteristics of injector. The 2 dimensional unsteady state flow fields have been calculated by using QUICK Scheme and SIMPLER Algorithm. As the spray model, DSF model and Euler-Lagrange Scheme have been used. The sine Auction has been used for droplet fluctuation model of fuel and oxidizer, while the coupling effects of the droplets between gas phase and evaporated vapor have been calculated by using PSIC model.

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.1 no.1
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• pp.87-94
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• 2001

Silicon nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are useful for a variety of applications, including anti-reflecting coatings in solar cells, passivation layers, dielectric layers in metal/insulator structures, and diffusion masks. PECVD systems are controlled by many operating variables, including RF power, pressure, gas flow rate, reactant composition, and substrate temperature. The wide variety of processing conditions, as well as the complex nature of particle dynamics within a plasma, makes tailoring SiN film properties very challenging, since it is difficult to determine the exact relationship between desired film properties and controllable deposition conditions. In this study, SiN PECVD modeling using optimized neural networks has been investigated. The deposition of SiN was characterized via a central composite experimental design, and data from this experiment was used to train and optimize feed-forward neural networks using the back-propagation algorithm. From these neural process models, the effect of deposition conditions on film properties has been studied. A recipe synthesis (optimization) procedure was then performed using the optimized neural network models to generate the necessary deposition conditions to obtain several novel film qualities including high charge density and long lifetime. This optimization procedure utilized genetic algorithms, hybrid combinations of genetic algorithm and Powells algorithm, and hybrid combinations of genetic algorithm and simplex algorithm. Recipes predicted by these techniques were verified by experiment, and the performance of each optimization method are compared. It was found that the hybrid combinations of genetic algorithm and simplex algorithm generated recipes produced films of superior quality.

• International Journal of Fluid Machinery and Systems
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• v.8 no.2
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• pp.94-101
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• 2015

To investigate the influence of blade profiles on cavitation behavior in impeller of centrifugal pump, a centrifugal pump with five different blade profiles impellers are studied numerically. The impellers with five different blade profiles (single arc, double arcs, triple arcs, logarithmic spiral and linear-variable angle spiral) were designed by the in-house hydraulic design code using geometric parameters of IS 150-125-125 centrifugal pump. The experiments of the centrifugal pump have been conducted to verify numerical simulation model. The numerical results show that the blade profile lines has a weak effect on cavitation inception near blade inlet edge position, however it has the key effect on the development of sheet cavitation in impeller, and also influences the distribution of sheet cavitation in impeller channels. A slight changing of blade setting angle will induce significant difference of cavitation in impeller. The sharp changing of impeller blade setting angle causes obvious cavitation region separation near the impeller inlet close to blade suction surface and much more flow loss. The centrifugal pump with blade profile of setting angle gently changing (logarithmic spiral) has the super cavitation performance, which means smaller critical cavitation number and lower vapor cavity volume fraction at the same conditions.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.271-284
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluminescence(PL), scanning electron microscopy (SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature 1500$^{\circ}C$ and C/Si flow ratio 2.0 of C3H3 0.2sccm & SiH4 0.3sccm. The growth rate of epilayers was about 1.0$\mu\textrm{m}$/h in the above growth condition.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.285-303
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• 1999

Thin films of hydrogenated amorphous silicon carbide compounds (a-SixC1x:H) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane(SiH4) and methane(CH4) as the gas precursors at 1 Torr and at low substrate temperature (25$0^{\circ}C$). The gas flow rate was changed with every other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of a-SixC1x:H films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.90-94
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• 1995

Reactive Ion Etching(RIE) of Si$_{3}$N$_{4}$ in a CF$_{4}$/O$_{2}$ gas plasma exhibits such good anisotropic etching properties that it is widely employed in current VLSI technology. However, the RIE process can cause serious damage to the silicon surface under the Si$_{3}$N$_{4}$ layer. When an atmospheric pressure chemical vapor deposited(APCVD) SiO$_{2}$ layer is used as a etch-stop material for Si$_{3}$N$_{4}$, it seems inevitable to get a good etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$. Therefore, we have undertaken thorough study of the dependence of the etch rate of Si$_{3}$N$_{4}$ plasmas on $O_{2}$ dilution, RF power, and chamber pressure. The etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$ has been obtained its value of 2.13 at the RF power of 150 W and the pressure of 110 mTorr in CF$_{4}$ gas plasma diluted with 25% $O_{2}$ by flow rate.