• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.156-159
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• 2011

SiNx:H films have been widely used for anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, SiNx:H films were deposited using high frequency (13.56 MHz) direct plasma enhanced chemical vapor deposition, and the optical and passivation properties were investigated. The radio frequency power, the spacing between the showerhead and wafer, the $NH_3/SiH_4$ ratio, the total gas flow, and the $N_2$ gas flow were changed over certain ranges for the film deposition. The thickness uniformity, the refractive index, and the minority carrier lifetime were then measured in order to study the properties of the film. The optimal deposition conditions for application to crystalline Si solar cells are determined from the results of this study.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.81-88
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• 1997

We investigated the CVPE grown of GaN thin films on (0001) sapphire using the $GaCl_3$ and $NH_3$ as source gases. The growth temperatures are ranged 970 to $1040^{\circ}C$ with the various flow rate ratio of source gases. The nitridation treatment was performed using the $NH_3$ gas before the GaN deposition. The optimal growth conditions were determined to be; growth temperature of $1040^{\circ}C$, III/V flow rate ratio of 2, nitridation time of 3 min. The FWHM at the (0002) peak from the XRD analysis was shown to be 0.32 deg. for the sample grown under those conditions. The growth rate was about $40{\mu}m/hr$ at $1040^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1190-1196
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• 1998

Ultrafine ${\beta}$-SiC powders were synthesized by the vapor phase reaction of TMS[Si(CH3)4] in hydrogen The reaction temperature and TMS concentration were varied from 1000 to 1400$^{\circ}C$ and from 1 to 10% respectively. The average particle size and phase of the powders were analyzed by TEM and XRD. Ultrafine ${\beta}$-SiC powders were synthesized above 1000$^{\circ}C$ and the crystallinity of the powders increased with increasing reaction temperature. Shape of the particles were spherical and had average size of about 20 nm which showed no difference as the reaction temperature and TMS concentration increased. From the FT-IR analysis the absorption bands of Si-C of the powders shifted to higher wavenumber as the reaction temperature increased,. Under the condition of total gas flow above 1500cc/min ${\beta}$-SiC and poly-Si powders were obtained simultaneously. The Si-O bond intensity was increased under the condition of total gas flow rate above 1000cc/min which might be due to oxidation formed on poly-Si.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.50-55
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• 2002

The transient numerical analysis was performed for vapor cooled current leads. The present numerical modeling considered that there is temperature difference between the copper lead and the helium vapor flow. This numerical modeling was compensated and validated by the experiment with commercially available 100 A current leads. The numerical modeling in this paper described thermal characteristics of overloaded current leads more accurately than the conventional steady state analysis. Proper design of overloaded current leads was suggested by indicating the appropriate overloading factor in the pulse mode operation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.309-317
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• 1996

Al2O3 thin films were deposited on Si-wafer (100) using organo-aluminum compounds at low pressure by chemical vapor deposition (CVD) method. The vapor of the organo-metallic precursor was carried by pure N2 gas. The deposition rate increased and then saturated as Tsub increased with increasing the AIP flow rate. The main contamination didn't found in deposited films except carbon. The H-O(H2O) IR absorption band decreased in intensity as the deposition temperature increased, and completely disappeared through annealing.

• Journal of Industrial Technology
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• v.2
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• pp.13-19
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• 1982

Polycrystalline silicon layers have been deposited by a chemical vapor deposition technique using $SiCl_4$, $H_2$ gas mixture on single crystal silicon substrates. In this work, the effects of depostion temperature and total flow rate on the deposition rate of polycrystalline silicon are investigated. From the experimental results it was found that the formation reaction of polycrystalline silicon was limited by surface reaction and mass transfer controlled as the deposition temperature was increased. The morphology of polycrystalline silicon layer changed from a fine structure to a coarse one as the deposition temperature was increased.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.8
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• pp.801-806
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• 2015

The experimental analysis of a crevice-type vapor chamber heat pipe (CVCHP) is investigated. The heat source of the CVCHP is a high-power light-emitting diode (LED). The CVCHP, which exhibits a bubble pumping effect, is used for heat dissipation in a high-heat-flux system. The working fluid is R-141b, and its charging ratio was set at 60 vol.% of the vapor chamber in a heat pipe. The total thermal conductivity of the falling-liquid-film-type model, which was a modified model, was 24% larger than that of the conventional model in the LED package. Flow visualization results indicated that bubbles grew larger as they combined. These combined bubbles pushed the working fluid to the top, partially wetting the heat-transfer area. The thermal resistance between the vapor chamber and tube in the modified design decreased by approximately 32%. The overall results demonstrated the better heat dissipation upon cooling of the high-power LED package.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.228-234
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• 2003

The velocity of gadolinium(Gd) atomic vapor vaporized by an electron beam was measured by a microbalance. The velocity of about 900 ㎧ was obtained at an evaporation surface temperature of 2400-2500 K. The measured value was approximately 100 ㎧ faster than the maximum velocity of an ideal monatomic gas in an adiabatic expansion. This phenomenon can be explained that the internal energy of Gd atoms populated in higher excited levels at the high temperature should be convened to kinetic energy during adiabatic expansion. The calculated velocity agrees with the measured one when 100 excited energy levels are included in an enthalpy term for the velocity calculation. The characteristics of vapor flow as a function of heated surface temperature are also reported.

• Journal of the Korean Solar Energy Society
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• v.34 no.4
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• pp.51-56
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• 2014

In this paper, OTEC(Ocean Thermal Energy Conversion) system with vapor-vapor ejector is newly proposed. And 6 wet refrigerants are applied into the proposed OTEC system for performance comparison. The results of comparison performance are as follows. In the view of system efficiency, R32/R744(90:10) has the highest efficiency among the 6 refrigerants. In case of evaporation capacity, pump work and mass flow rate of working fluid, R744, R717 and R717 is lowest value, respectively. As this results, the vapor-vapor ejector is able to increase the efficiency of system. And It is necessary to select the optimized working fluid considering environmental and economic factors.

• Korean Chemical Engineering Research
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• v.44 no.5
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• pp.528-534
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• 2006

The purpose of this paper is to investigate the optimal operating condition for the hydrogen production by biogas reforming using the plasmatron induced thermal plasma. The component ratio of biogas($CH_4/CO_2$) produced by anaerobic digestion reactor were 1.03, 1.28, 2.12, respectively. And the reforming experiment was performed. To improve hydrogen production and methane conversion rates, parametric screening studies were conducted, in which there are the variations of biogas flow ratio(biogas/TFR: total flow rate), vapor flow ratio($H_2O/TFR$: total flow rate) and input power. When the variations of biogas flow ratio, vapor flow ratio and input power were 0.32~0.37, 0.36~0.42, and 8 kW, respectively, the methance conversion reached its optimal operating condition, or 81.3~89.6%. Under the condition mentioned above, the wet basis concentrations of the synthetic gas were H2 27.11~40.23%, CO 14.31~18.61%. The hydrogen yield and the conversion rate of energy were 40.6~61%, 30.5~54.4%, respectively, the ratio of hydrogen to carbon monoxide($H_2/CO$) was 1.89~2.16.