• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1348-1351
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• 2007

We demonstrated that the threshold voltage shift owing to a gate-bias stress is originated from the trapped charges at the interface between semiconductor layer and dielectric layer, and such drawback can be settled by applying long-term delay time to the gate electrode.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.770-772
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• 2002

A new dry-processing method of organic gate dielectric film in field-effect transistors (FETs) was proposed. The method use vapor deposition polymerization (VDP) that is continuous and low temperature process. It has the advantages of shadow mask patterning and dry processing in flexible low-cost large area applications. Here, 80 nm-thick Al as a gate electrode was evaporated through shadow mask. Gate insulators used two different polyimides. The one material was 4,4'-oxydiphtahlic anhydride (ODPA) and 4,4'-oxydianiline (ODA). Another was 2,2-bis(3,4-dicarboxyphenyl) Hexafluoropropane Dianhydride (6FDA) and 4,4' -oxydianiline (ODA). These were co-deposited by high-vaccum thermal-evapora and cured at 150 $^{\circ}C$ for 1 hour, respectively. Pentacene as a semiconductor and 100 nm-thick Au as a source and drain electrode were evaporated through shadow mask.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1552-1554
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• 1997

In this paper, thin films of PI were fabricated VDPM of dry processes which are easy to control the film's thickness and hard to pollute due to volatile solvents. From FT-IR, PAA thin films fabricated by VDP were changed to PI thin films by thermal curing. From AFM and ellipsometer experimental, the higher curing temperature is, the films thickness decreases and reflectance increases. Therefore, PI could be fabricated stable by increasing curing temperature.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1394-1396
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• 1994

Polyimide thin films were fabricated an using vapor deposition polymerization apportus, and their FT-IR and TGA characteristics were investigated. The peaks of $720cm^{-1}$ and $1380cm^{-1}$ show C=O stretch mode and C-N stretch mode, and that of the cured polyimide at $350^{\circ}C$ were sturated. $T_d$(Depolymerization temperature) was showed at $405^{\circ}C$ from research of thermal resistivity characteristics by TGA It was possible to fabrication of polyimide thin film by VDPM.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.2
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• pp.1-7
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• 1999

The polymide thin films were fabricated by vapor deposition polymerized method of dry processes and studied the electric breakdown characteristics by self healing method. Polyamic-acid(PAA) thin films prepared by vapor deposition-polymerization (VDP) from PMDA(Pyromellitic dianhydride) and DDE(4,4'-diaminodiphenyl ether) were changed to PI thin films by thermal curing. In the same sample, electric breakdown fields increase with increasing test number, and then saturated over test number of the 25th. When the curing temperatures were 200$^{\circ}C$, 250$^{\circ}C$, 300$^{\circ}C$ and 350$^{\circ}C$, the electric breakdown strengths of PI were 1.21MV/cm, 3.94MV/cm, 4.61MV/cm and 4.55MV/cm at the test number of 40th.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1487-1489
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• 1998

In this paper, thin films of PI were fabricated VDPM of dry processes which are easy to control the film's thickness and hard to pollute due to volatile solvents. From FT-lR, PAA thin films fabricated by VDP were changed to PI thin films by thermal curing. From SEM, AFM and Ellipsometer experimental, as the higher curing temperatures the films thickness decreases and reflectance increases. Therefore, Pl could be fabricated stable by increasing curing temperature. The relative permitivity and dissipation loss factor were 3.7 and 0.008. Also, the resistivity was about $1.05{\times}10^{15}{\Omega}cm$ at $30^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.230-231
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• 2007

we fabricated a pentacene thin-film transistor with an $Al_2O_3$ layer of ALD as a gate insulator and obtained a device with better electrical characteristics at low operating voltages (below 16V). This device was found to have a field-effect mobility of $0.03cm^2/Vs$, a threshold voltage of -6V, an subthreshold slope of 1 V/decade, and an on/off current ratio of $10^6$.