• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1394-1396
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• 1994

Polyimide thin films were fabricated an using vapor deposition polymerization apportus, and their FT-IR and TGA characteristics were investigated. The peaks of $720cm^{-1}$ and $1380cm^{-1}$ show C=O stretch mode and C-N stretch mode, and that of the cured polyimide at $350^{\circ}C$ were sturated. $T_d$(Depolymerization temperature) was showed at $405^{\circ}C$ from research of thermal resistivity characteristics by TGA It was possible to fabrication of polyimide thin film by VDPM.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.402-405
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• 1999

The Study of this paper is to establish the optimum fabricating condition of specimens using Vapor Deposition Polymerization Method which belongs to a mode of preparation of functional organic thin films with dry process and to develop thin film type humidity sensor which has good humidity sensitive Characteristics. Scanning electron microscopy Atomic force microscopy were used to analyze the characteristics of thin film and the basic structure of the humidity sensor is a parallel capacitor which consists of three layers of Al/PI/Al. The characteristics of fabricated samples were measured under various conditions and obtained linear characteristics in the range of 20∼80%RH independent of temperature change and low hysteresis characteristics.

• 전자공학회논문지T
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• 제36T권2호
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• pp.1-7
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• 1999

본 연구는 진공증착중합법에 의해 폴리이미드를 제작하고 박막의 절연파괴특성을 자기절연회복법에 의해 측정하였다. PMDA(Pyromellitic dianhydride)와 DDE(4,4'-diaminodiphenyl ether)를 증착 중합하여 Polyamic-acid(PAA)를 형성하고 이를 열처리함으로서 폴리이미드를 제조하였다. 제조된 박막의 특성을 조사하기 위해 주사형 전자현미경(SEM), 적외선분광장치(FT-IR) 및 오저전자분광장치(AES)를 사용하였다. 절연파괴특성 실험은 동일 시료에서 50회를 반복하였으며 25회 이상에서 절연파괴전계는 포화되었다. 열처리 온도를 200${^\circ}C$, 250$^{\circ}C$, 300$^{\circ}C$ 및 350${^\circ}C$로 변화했을 때 절연파괴전계는 1.21MV/cm, 3.94MV/cm, 4.61MV/cm, 4.55MV/cm로 변화하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.378.2-378.2
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• 2016

Biosensors currently suffer from severe non-specific adsorption of proteins, which causes false positive errors in detection through overestimation of the affinity value. Overcoming this technical issue motivates our research. Polyethylene glycol (PEG) is well known for its ability to reduce the adsorption of biomolecules; hence, it is widely used in various areas of medicine and other biological fields. Likewise, amine functionalized surfaces are widely used for biochemical analysis, drug delivery, medical diagnostics and high throughput screening such as biochips. As a result, many coating techniques have been introduced, one of which is plasma polymerization - a powerful coating method due to its uniformity, homogeneity, mechanical and chemical stability, and excellent adhesion to any substrate. In our previous works, we successfully fabricated plasmapolymerized PEG (PP-PEG) films [1] and amine functionalized films [2] using the plasma enhanced chemical vapor deposition (PECVD) technique. In this research, an amine functionalized PP-PEG film was fabricated by using the plasma co-polymerization technique with PEG 200 and ethylenediamine (EDA) as co-precursors. A biocompatible amine functionalized film was surface characterized by X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectroscopy (FT-IR). The density of the surface amine functional groups was carried out by quantitative analysis using UV-visible spectroscopy. We found through surface plasmon resonance (SPR) analysis that non-specific protein adsorption was drastically reduced on amine functionalized PP-PEG films. Our functionalized PP-PEG films show considerable potential for biotechnological applications such as biosensors.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1487-1489
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• 1998

In this paper, thin films of PI were fabricated VDPM of dry processes which are easy to control the film's thickness and hard to pollute due to volatile solvents. From FT-lR, PAA thin films fabricated by VDP were changed to PI thin films by thermal curing. From SEM, AFM and Ellipsometer experimental, as the higher curing temperatures the films thickness decreases and reflectance increases. Therefore, Pl could be fabricated stable by increasing curing temperature. The relative permitivity and dissipation loss factor were 3.7 and 0.008. Also, the resistivity was about $1.05{\times}10^{15}{\Omega}cm$ at $30^{\circ}C$.

• 한국표면공학회지
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• 제53권5호
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• pp.201-206
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• 2020

A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO₂-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO₂-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.230-231
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• 2007

we fabricated a pentacene thin-film transistor with an $Al_2O_3$ layer of ALD as a gate insulator and obtained a device with better electrical characteristics at low operating voltages (below 16V). This device was found to have a field-effect mobility of $0.03cm^2/Vs$, a threshold voltage of -6V, an subthreshold slope of 1 V/decade, and an on/off current ratio of $10^6$.

• 한국진공학회지
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• 제17권3호
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• pp.195-198
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• 2008

이 논문에서 무기 게이트 인슐레이터 위에 Polyimide 유기 점착층을 성형하여, 고성능의 유기 박막 트렌지스터(OTFT)소자를 제작한 후 450 nm 두께로 폴리이미드를 Vapor deposition polymerization (VDP)방법을 사용하여 패시베이션하였다. 이때 폴리이미드성막을 위해, 스핀코팅 방법 대신 VDP 방법 도입하였다. 이 폴리이미드 고분자막은 2,2 bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA)와 4,4‘-oxydianiline(ODA)을 고진공에서 동시에 열증착 시킨 후, $170^{\circ}C$에서 2시간 열처리하여 고분자화 된 막을 형성하였다. 다른 종류의 유기 패시베이션 막이 소자에 주는 영향을 비교 분석하기 위해, 450 nm 두께로 스핀코팅법을 이용하여 폴리비닐알콜 패시베이션 막을 형성하였다. 이 두 가지 패시베이션 막 형성법이 소자의 문턱전압과, 전하이동도에 주는 영향을 전기적 특성을 통해 변화를 확실히 볼 수 있었다. 최초 유기 박막 트렌지스터의 전기적 특성은 문턱전압, 점멸비, 그리고 정공의 이동도는 각각, -3 V, 약 $10^6$ 그리고, $0.24cm^2$/Vs 이 측정되었고. 폴리이미드를 사용하여 패시베이션 후 특성이 각각 0 V, 약 $10^6$ 그리고, $0.26cm^2/Vs$, 폴리비닐알콜 패시베이션 경우는 특성이 각각, 문턱전압의 경우 0 V에서 +2 V로, 점멸비는 $10^6$에서 $10^5$으로 전계효과이동도는 $0.13cm^2/Vs$ 에서 $0.13cm^2/Vs$로 변화하였다.

• 한국화재소방학회논문지
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• 제10권3호
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• pp.3-9
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• 1996

PMDA와 4,4'-DDE 단량체를 이용하여 진공증착중합법으로 기판온도를 변화시키면서 제조한 폴리이미드 박막을 TGA(Thermogravimetry Analyzer)로 내열특성을 조사하였다. 박막 제조시 기판온도의 증가에 따라 증착율이 감소함을 알 수 있었으며, 기판온도가 7$0^{\circ}C$ 이상 일때는 중합이 이루어지지 않아 폴리이미드라고 할 수 없었다. TG곡선으로부터 구한 5%중량 감소온도($T_{TG}$)는 기판온도가 $20^{\circ}$, $40^{\circ}$, $70^{\circ}$일때는 $565^{\circ}$, $397^{\circ}$, $210^{\circ}$이었다. 따라서 $20^{\circ}$와 $40^{\circ}$에서 제조한 박막이 20,000시간 동안 견딜 수 있는 온도는 각각 $230^{\circ}$와 $200^{\circ}$임을 예측할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.312-312
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• 2011

In SiH4/H2 discharge for growth process of hydrogenated amorphous silicon (a-Si:H), silane polymers, produced by SiH2 + Sin-1H2n ${\rightarrow}$ SinH2n+2, have no reactivity on the film-growing surface. However, under the SiH2 rich condition, high silane reactive species (HSRS) can be produced by electron collision to silane polymers. HSRS, having relatively strong reactivity on the surface, can react with dangling bond and form Si-H2 networks which have a close correlation with photo-induced degradation of a-Si:H thin film solar cell [1]. To find contributions of suggested several external plasma conditions (pressure, frequency and ratio of mixture gas) [2,3] to suppressing productions of HSRS, some plasma characteristics are studied by numerical methods. For this study, a zero-dimensional global model for SiH4/H2 discharge and a one-dimensional particle-in-cell Monte-Carlo-collision model (PIC-MCC) for pure SiH4 discharge have been developed. Densities of important reactive species of SiH4/H2 discharge are observed by means of the global model, dealing 30 species and 136 reactions, and electron energy probability functions (EEPFs) of pure SiH4 discharge are obtained from the PIC-MCC model, containing 5 charged species and 15 reactions. Using global model, SiH2/SiH3 values were calculated when pressure and driving frequency vary from 0.1 Torr to 10 Torr, from 13.56 MHz to 60 MHz respectively and when the portion of hydrogen changes. Due to the limitation of global model, frequency effects can be explained by PIC-MCC model. Through PIC-MCC model for pure SiH4, EEPFs are obtained in the specific range responsible for forming SiH2 and SiH3: from 8.75 eV to 9.47 eV [4]. Through densities of reactive species and EEPFs, polymerization reactions and production of HSRS are discussed.